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195 条记录 (耗时 0.031 秒)

    Schottky barrier diode and integrated circuit using the same
    63.
    发明授权
    Schottky barrier diode and integrated circuit using the same 有权
    肖特基势垒二极管和集成电路使用相同

    公开(公告)号：US07375407B2

    公开(公告)日：2008-05-20

    申请号：US11271833

    申请日：2005-11-14

    申请人： Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

    发明人： Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

    IPC分类号： H01L29/47

    CPC分类号： H01L29/66143 ,  H01L29/872

    摘要： A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance than the first semiconductor layer and the second semiconductor layer. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer in a portion surrounded with the high-resistance region.

    摘要翻译： 肖特基势垒二极管包括依次形成在衬底上的第一半导体层和第二半导体层; 以及形成在第一半导体层和第二半导体层中并且具有比第一半导体层和第二半导体层更高的电阻的高电阻区域。 彼此间隔开的肖特基电极和欧姆电极在被高电阻区域包围的部分中形成在第二半导体层上。

    Resonator and filter using the same
    66.
    发明申请
    Resonator and filter using the same 失效
    谐振器和滤波器使用相同

    公开(公告)号：US20060038636A1

    公开(公告)日：2006-02-23

    申请号：US11194460

    申请日：2005-08-02

    申请人： Naohiro Tsurumi ,  Kazuhiro Yahata ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda ,  Atsuhiko Kanda

    发明人： Naohiro Tsurumi ,  Kazuhiro Yahata ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda ,  Atsuhiko Kanda

    IPC分类号： H03H9/58

    CPC分类号： H03H9/173 ,  H03H3/04 ,  H03H9/172 ,  H03H9/564 ,  H03H2003/021

    摘要： An acoustic resonator includes: a substrate; a resonator film which is supported above the main surface of the substrate and includes a piezoelectric film and a pair of a top electrode and a bottom electrode which are formed on part of the top surface and part of the bottom surface of the piezoelectric film, respectively, to face each other via the piezoelectric film; and a support which is formed on the main surface of the substrate to support the resonator film from below. A resonance cavity is provided in part of a region between the substrate and the resonator film below at least a portion of part of the resonator film where the top electrode and the bottom electrode coincide with each other and an isolation cavity is provided in other part of said region where the support and the resonance cavity do not exist.

    摘要翻译： 声谐振器包括：基板; 一种谐振膜，其被支撑在基板的主表面上方，分别包括压电膜和一对顶电极和底电极，它们分别形成在压电膜的顶表面和底表面的一部分上 通过压电膜相互面对; 以及形成在基板的主表面上以从下方支撑谐振膜的支撑体。 谐振腔被设置在基板和谐振器膜之间的区域的一部分的下方，在谐振膜的至少一部分之上，其中顶部电极和底部电极彼此重合，并且在另一部分中设置隔离腔 所述区域不存在支撑和谐振腔。

    Method for fabricating semiconductor device
    68.
    发明申请
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US20050026393A1

    公开(公告)日：2005-02-03

    申请号：US10861464

    申请日：2004-06-07

    申请人： Yutaka Hirose ,  Tsuyoshi Tanaka ,  Daisuke Ueda

    发明人： Yutaka Hirose ,  Tsuyoshi Tanaka ,  Daisuke Ueda

    IPC分类号： H01L21/30 ,  H01L21/306 ,  H01L21/46 ,  H01L21/78

    CPC分类号： H01L21/30612 ,  H01L21/78

    摘要： A semiconductor layer formed on one surface of a substrate is irradiated with light from the other surface of the substrate to thermally decompose part of a region of the semiconductor layer in contact with the substrate, thereby forming a thermally decomposed layer. Thereafter, the thermally decomposed layer is removed with the substrate kept bonded with the semiconductor layer.

    摘要翻译： 在基板的一个表面上形成的半导体层被照射来自基板的另一个表面的光，以热分解半导体层与基板接触的区域的一部分，从而形成热分解层。 之后，用与半导体层保持接合的基板去除热分解层。

    Field-effect transistor, bipolar transistor, and methods of fabricating the same
    69.
    发明授权
    Field-effect transistor, bipolar transistor, and methods of fabricating the same 失效
    场效应晶体管，双极晶体管及其制造方法

    公开(公告)号：US06548838B1

    公开(公告)日：2003-04-15

    申请号：US09666157

    申请日：2000-09-19

    申请人： Yoshiharu Anda ,  Mitsuru Nishitsuji ,  Tsuyoshi Tanaka ,  Daisuke Ueda

    发明人： Yoshiharu Anda ,  Mitsuru Nishitsuji ,  Tsuyoshi Tanaka ,  Daisuke Ueda

    IPC分类号： H01L310328

    CPC分类号： H01L29/66462 ,  H01L29/41725 ,  H01L29/7784

    摘要： A field-effect transistor of the present invention has first semiconductor layers disposed in at least two regions located above a substrate and spaced apart in a direction parallel to a substrate surface, second semiconductor layers disposed on the respective first semiconductor layers to protrude from the respective side surfaces of the first semiconductor layers, and ohmic electrodes disposed on the respective second semiconductor layers. The field-effect transistor also has a gate electrode formed by self alignment relative to the ohmic electrodes, which is disposed in a region located above the substrate and lying between the first semiconductor layers in spaced relation to the respective side surfaces of the first semiconductor layers.

    摘要翻译： 本发明的场效应晶体管具有位于基板上方的至少两个区域中的第一半导体层，并且在平行于衬底表面的方向上间隔开，第二半导体层设置在相应的第一半导体层上以从相应的 第一半导体层的侧表面和设置在相应的第二半导体层上的欧姆电极。 场效应晶体管还具有通过相对于欧姆电极进行自对准而形成的栅电极，该欧姆电极设置在位于衬底上方的区域中，并且位于第一半导体层之间，与第一半导体层的相应侧表面间隔开 。

    Transistor
    70.
    发明授权
    Transistor 有权
    晶体管

    公开(公告)号：US07683399B2

    公开(公告)日：2010-03-23

    申请号：US11758304

    申请日：2007-06-05

    申请人： Hidetoshi Ishida ,  Tsuyoshi Tanaka ,  Daisuke Ueda

    发明人： Hidetoshi Ishida ,  Tsuyoshi Tanaka ,  Daisuke Ueda

    IPC分类号： H01L31/0328

    CPC分类号： H01L29/7787 ,  H01L29/045 ,  H01L29/0891 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/452

    摘要： There is provided a normally-off type transistor made of a nitride semiconductor. The transistor includes; an undoped GaN layer which forms a channel region; an undoped Al0.2Ga0.8N layer which is formed on the undoped GaN layer and has a band gap larger than that of the undoped GaN layer; a p-type Al0.2Ga0.8N control layer which is formed on the undoped Al0.2Ga0.8N layer, has a p-type conductivity and forms a control region; an Ni gate electrode which contacts with the p-type Al0.2Ga0.8N control layer; a Ti/Al source electrode and a Ti/Al drain electrode which are formed beside the p-type Al0.2Ga0.8N control layer; and an Ni ohmic electrode which is connected to the undoped GaN layer and serves as a hole absorbing electrode. With this transistor, it is possible to achieve a large-current operation and a high switching speed.

    摘要翻译： 提供了由氮化物半导体制成的常关型晶体管。 晶体管包括： 形成沟道区的未掺杂GaN层; 未掺杂的Al0.2Ga0.8N层，其形成在未掺杂的GaN层上，并且具有比未掺杂的GaN层的带隙大的带隙; 形成在未掺杂的Al0.2Ga0.8N层上的p型Al0.2Ga0.8N控制层具有p型导电性并形成控制区; 与p型Al0.2Ga0.8N控制层接触的Ni栅电极; 形成在p型Al0.2Ga0.8N控制层旁边的Ti / Al源电极和Ti / Al漏电极; 以及连接到未掺杂的GaN层并用作空穴吸收电极的Ni欧姆电极。 利用该晶体管，可以实现大电流动作和高切换速度。