公开(公告)号：US06982479B2

公开(公告)日：2006-01-03

申请号：US10669219

申请日：2003-09-24

申请人： Masaaki Nishijima ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Masaaki Nishijima ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L23/02

CPC分类号： H01L23/49861 ,  H01L23/057 ,  H01L23/481 ,  H01L23/49541 ,  H01L23/66 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01032 ,  H01L2924/10162 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device in which an inductance element formed in a resin package has stable characteristics, impedance matching is achieved easily, and the stability of high-frequency characteristics is improved, more particularly a semiconductor chip sealed within mold resin having a conductor lead extending from an inside of the mold resin to an outside. A portion of the conductor lead inside the mold resin forms an inductance element, at least a part of which is narrower than the external portion of the conductor outside the mold resin.

摘要翻译： 形成在树脂封装中的电感元件的半导体器件具有稳定的特性，容易实现阻抗匹配，提高了高频特性的稳定性，更具体地说，密封在具有从 模具树脂内部到外面。 导体引线在模具树脂内的一部分形成电感元件，其电感元件的至少一部分比模具树脂外导体的外部部分窄。

公开(公告)号：US07674719B2

公开(公告)日：2010-03-09

申请号：US11194419

申请日：2005-08-01

申请人： Ming Li ,  Xinbing Liu ,  Hiroyuki Sakai ,  Masaaki Nishijima ,  Daisuke Ueda

发明人： Ming Li ,  Xinbing Liu ,  Hiroyuki Sakai ,  Masaaki Nishijima ,  Daisuke Ueda

IPC分类号： H01L21/302

CPC分类号： B23K26/0624 ,  B23K26/40 ,  B23K2103/50

摘要： A method for forming a via in a sapphire substrate with a laser machining system that includes an ultrafast pulsed laser source. The sapphire substrate is provided. Pulses of laser light are substantially focused to a beam spot on the first surface of the sapphire substrate such that each focused pulse of laser light ablates a volume of the sapphire substrate having a depth less than the substrate thickness. The beam spot of the focused laser light pulses is scanned over a via portion of the first surface of the sapphire substrate. The sapphire substrate is moved in a direction substantially normal to the first surface to control the volume of the sapphire substrate ablated by each pulse of laser light to be substantially constant. The pulsing and scanning steps are repeated until the via is formed extending from the first surface to the second surface of the sapphire substrate.

摘要翻译： 一种在具有包括超快脉冲激光源的激光加工系统的蓝宝石衬底中形成通孔的方法。 提供蓝宝石衬底。 激光的脉冲基本上聚焦到蓝宝石衬底的第一表面上的束斑上，使得每个聚焦的激光脉冲消除了具有小于衬底厚度的深度的蓝宝石衬底的体积。 聚焦激光脉冲的束斑在蓝宝石衬底的第一表面的通孔部分上扫描。 蓝宝石衬底沿着基本上垂直于第一表面的方向移动，以控制由每个激光脉冲消融的蓝宝石衬底的体积基本恒定。 重复脉冲和扫描步骤，直到形成从蓝宝石衬底的第一表面延伸到第二表面的通孔。

公开(公告)号：US20060226415A1

公开(公告)日：2006-10-12

申请号：US11284049

申请日：2005-11-22

申请人： Masaaki Nishijima ,  Daisuke Ueda

发明人： Masaaki Nishijima ,  Daisuke Ueda

IPC分类号： H01L29/06

CPC分类号： H01L29/7787 ,  G01S7/032 ,  H01L23/481 ,  H01L23/66 ,  H01L24/24 ,  H01L24/82 ,  H01L29/2003 ,  H01L2223/6627 ,  H01L2224/24011 ,  H01L2224/24051 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/1903 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00

摘要： A semiconductor integrated circuit device includes a HFET formed on part of a substrate made of sapphire and including a Group III-V nitride semiconductor layer, a dielectric film formed on the substrate to cover the top and side surfaces and upper corners of the Group III-V nitride semiconductor layer, a microstrip line formed with the dielectric film interposed between the substrate and the microstrip line, and a drain lead which is formed on part of the dielectric film and through which the HFET is electrically connected to the microstrip line.

公开(公告)号：US07476918B2

公开(公告)日：2009-01-13

申请号：US11284049

申请日：2005-11-22

申请人： Masaaki Nishijima ,  Daisuke Ueda

发明人： Masaaki Nishijima ,  Daisuke Ueda

IPC分类号： H01L29/08

CPC分类号： H01L29/7787 ,  G01S7/032 ,  H01L23/481 ,  H01L23/66 ,  H01L24/24 ,  H01L24/82 ,  H01L29/2003 ,  H01L2223/6627 ,  H01L2224/24011 ,  H01L2224/24051 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/1903 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00

摘要： A semiconductor integrated circuit device includes a HFET formed on part of a substrate made of sapphire and including a Group III-V nitride semiconductor layer, a dielectric film formed on the substrate to cover the top and side surfaces and upper corners of the Group III-V nitride semiconductor layer, a microstrip line formed with the dielectric film interposed between the substrate and the microstrip line, and a drain lead which is formed on part of the dielectric film and through which the HFET is electrically connected to the microstrip line.

摘要翻译： 半导体集成电路器件包括形成在由蓝宝石制成并包括III-V族氮化物半导体层的衬底的一部分上的HFET，形成在衬底上以覆盖第III-V族氮化物半导体层的顶部和侧面以及上角的电介质膜， V型氮化物半导体层，由介于该基板和微带线之间的电介质膜形成的微带线，以及形成在电介质膜的一部分上并且HFET与微带线电连接的漏极引线。

公开(公告)号：US20070026676A1

公开(公告)日：2007-02-01

申请号：US11194419

申请日：2005-08-01

申请人： Ming Li ,  Xinbing Liu ,  Hiroyuki Sakai ,  Masaaki Nishijima ,  Daisuke Ueda

发明人： Ming Li ,  Xinbing Liu ,  Hiroyuki Sakai ,  Masaaki Nishijima ,  Daisuke Ueda

IPC分类号： H01L21/302

CPC分类号： B23K26/0624 ,  B23K26/40 ,  B23K2103/50

摘要： A method for forming a via in a sapphire substrate with a laser machining system that includes an ultrafast pulsed laser source. The sapphire substrate is provided. Pulses of laser light are substantially focused to a beam spot on the first surface of the sapphire substrate such that each focused pulse of laser light ablates a volume of the sapphire substrate having a depth less than the substrate thickness. The beam spot of the focused laser light pulses is scanned over a via portion of the first surface of the sapphire substrate. The sapphire substrate is moved in a direction substantially normal to the first surface to control the volume of the sapphire substrate ablated by each pulse of laser light to be substantially constant. The pulsing and scanning steps are repeated until the via is formed extending from the first surface to the second surface of the sapphire substrate.

摘要翻译： 一种在具有包括超快脉冲激光源的激光加工系统的蓝宝石衬底中形成通孔的方法。 提供蓝宝石衬底。 激光的脉冲基本上聚焦到蓝宝石衬底的第一表面上的束斑上，使得每个聚焦的激光脉冲消除了具有小于衬底厚度的深度的蓝宝石衬底的体积。 聚焦激光脉冲的束斑在蓝宝石衬底的第一表面的通孔部分上扫描。 蓝宝石衬底沿着基本上垂直于第一表面的方向移动，以控制由每个激光脉冲消融的蓝宝石衬底的体积基本恒定。 重复脉冲和扫描步骤，直到形成从蓝宝石衬底的第一表面延伸到第二表面的通孔。

公开(公告)号：US08203376B2

公开(公告)日：2012-06-19

申请号：US12445390

申请日：2007-11-20

申请人： Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Hiroaki Ueno ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Hiroaki Ueno ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H03K17/687

CPC分类号： H01L29/7787 ,  H01L27/0605 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/739 ,  H01L29/8124

摘要： A semiconductor device includes a semiconductor layer stack 13 formed on a substrate 11 and having a channel region, a first electrode 16A and a second electrode 16B formed spaced apart from each other on the semiconductor layer stack 13, a first gate electrode 18A formed between the first electrode 16A and the second electrode 16B, and a second gate electrode 18B formed between the first gate electrode 18A and the second electrode 16B. A first control layer 19A having a p-type conductivity is formed between the semiconductor layer stack 13 and the first gate electrode 18A.

摘要翻译： 半导体器件包括形成在衬底11上并具有沟道区的半导体层堆叠13，在半导体层叠层13上彼此隔开形成的第一电极16A和第二电极16B，形成在第一栅电极18A之间的第一栅电极18A 第一电极16A和第二电极16B，以及形成在第一栅电极18A和第二电极16B之间的第二栅电极18B。 在半导体层堆叠13和第一栅电极18A之间形成具有p型导电性的第一控制层19A。

公开(公告)号：US08076698B2

公开(公告)日：2011-12-13

申请号：US11995040

申请日：2006-06-27

申请人： Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Masahiro Hikita ,  Hiroaki Ueno

发明人： Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Masahiro Hikita ,  Hiroaki Ueno

IPC分类号： H01L31/0328

CPC分类号： H01L29/739 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7786

摘要： In a transistor, an AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type control layer 105, and a p-type contact layer 106 are formed in this order on a sapphire substrate 101. The transistor further includes a gate electrode 110 in ohmic contact with the p-type contact layer 106, and a source electrode 108 and a drain electrode 109 provided on the undoped AlGaN layer 104. By applying a positive voltage to the p-type control layer 105, holes are injected into a channel to increase a current flowing in the channel.

摘要翻译： 在晶体管中，在蓝宝石衬底101上依次形成AlN缓冲层102，未掺杂的GaN层103，未掺杂的AlGaN层104，p型控制层105和p型接触层106。 晶体管还包括与p型接触层106欧姆接触的栅电极110以及设置在未掺杂的AlGaN层104上的源电极108和漏极109.通过向p型控制层105施加正电压 ，孔被注入到通道中以增加在通道中流动的电流。

公开(公告)号：US07825434B2

公开(公告)日：2010-11-02

申请号：US11647218

申请日：2006-12-29

申请人： Hiroaki Ueno ,  Manabu Yanagihara ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Hiroaki Ueno ,  Manabu Yanagihara ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/08

CPC分类号： H01L29/7783 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/432 ,  H01L29/452 ,  H01L29/7787

摘要： A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.

摘要翻译： 氮化物半导体器件包括：由第一氮化物半导体制成的第一半导体层; 第二半导体层，其形成在第一半导体层的主表面上并且由具有比第一氮化物半导体的带隙宽的第二氮化物半导体构成; 选择性地形成在所述第二半导体层的上部并且由上述第二半导体层的上部制成的具有p型导电性的第三氮化物半导体的控制层; 源极和漏极，形成在控制层的相应侧上的第二半导体层上; 形成在所述控制层上的栅电极; 以及第四半导体层，形成在与所述主表面相对的所述第一半导体层的表面上，相对于所述第一氮化物半导体具有价带中的势垒，并且由包含铝的第四氮化物半导体构成。

公开(公告)号：US07456707B2

公开(公告)日：2008-11-25

申请号：US11194460

申请日：2005-08-02

申请人： Naohiro Tsurumi ,  Kazuhiro Yahata ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda ,  Atsuhiko Kanda

发明人： Naohiro Tsurumi ,  Kazuhiro Yahata ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda ,  Atsuhiko Kanda

IPC分类号： H03H9/54

CPC分类号： H03H9/173 ,  H03H3/04 ,  H03H9/172 ,  H03H9/564 ,  H03H2003/021

摘要： An acoustic resonator includes: a substrate; a resonator film which is supported above the main surface of the substrate and includes a piezoelectric film and a pair of a top electrode and a bottom electrode which are formed on part of the top surface and part of the bottom surface of the piezoelectric film, respectively, to face each other via the piezoelectric film; and a support which is formed on the main surface of the substrate to support the resonator film from below. A resonance cavity is provided in part of a region between the substrate and the resonator film below at least a portion of part of the resonator film where the top electrode and the bottom electrode coincide with each other and an isolation cavity is provided in other part of said region where the support and the resonance cavity do not exist.

摘要翻译： 声谐振器包括：基板; 一种谐振膜，其被支撑在基板的主表面上方，分别包括压电膜和一对顶电极和底电极，它们分别形成在压电膜的顶表面和底表面的一部分上 通过压电膜相互面对; 以及形成在基板的主表面上以从下方支撑谐振膜的支撑体。 谐振腔被设置在基板和谐振器膜之间的区域的一部分的下方，在谐振膜的至少一部分之上，其中顶部电极和底部电极彼此重合，并且在另一部分中设置隔离腔 所述区域不存在支撑和谐振腔。

公开(公告)号：US20060289894A1

公开(公告)日：2006-12-28

申请号：US11455631

申请日：2006-06-20

申请人： Tomohiro Murata ,  Yutaka Hirose ,  Yoshito Ikeda ,  Tsuyoshi Tanaka ,  Kaoru Inoue ,  Daisuke Ueda ,  Yasuhiro Uemoto

发明人： Tomohiro Murata ,  Yutaka Hirose ,  Yoshito Ikeda ,  Tsuyoshi Tanaka ,  Kaoru Inoue ,  Daisuke Ueda ,  Yasuhiro Uemoto

IPC分类号： H01L31/00

CPC分类号： H01L29/7787 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766

摘要： A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1−xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1−N; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.

摘要翻译： 半导体器件具有：形成在导电衬底上并具有高电阻的Al x Ga 1-x N的缓冲层; 形成在缓冲层上的元件形成层，具有沟道层，并由未掺杂的GaN和N型Al x Ga 1 -N构成; 以及选择性地形成在元件形成层上的源电极，漏电极和栅电极。 源电极被填充在设置在缓冲层和元件形成层中的通孔中，因此电连接到导电基板。