公开(公告)号：US06664174B2

公开(公告)日：2003-12-16

申请号：US09928489

申请日：2001-08-14

Applicant: Taiji Ema ,  Edward J. Swenson ,  Thomas W. Richardson ,  Yunlong Sun

Inventor： Taiji Ema ,  Edward J. Swenson ,  Thomas W. Richardson ,  Yunlong Sun

IPC: H01L2144

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The semiconductor device includes a blocking layer 12 formed on a substrate 10, an insulation film 14 formed on the blocking layer 12, and a fuse 22 formed on the insulation film 14. The blocking layer 12 is formed below the fuse 22, whereby the fuse is disconnected by laser ablation, and the laser ablation can be stopped by the blocking layer 12 with good controllability without damaging the substrate. The fuses to be disconnected can be arranged at a very small pitch, which can improve integration of the fuse circuit.

Abstract translation: 该半导体器件包括形成在基板10上的阻挡层12，形成在阻挡层12上的绝缘膜14以及形成在绝缘膜14上的保险丝22。阻挡层12形成在保险丝22的下方，从而保险丝 通过激光烧蚀断开，并且激光烧蚀可以通过阻挡层12以良好的可控性而停止，而不损坏衬底。 要断开的保险丝可以以非常小的间距布置，这可以提高保险丝电路的集成度。

公开(公告)号：US06534743B2

公开(公告)日：2003-03-18

申请号：US10066351

申请日：2002-01-31

Applicant: Edward J. Swenson ,  Yunlong Sun ,  Richard S. Harris

Inventor： Edward J. Swenson ,  Yunlong Sun ,  Richard S. Harris

IPC: B23K2600

CPC classification number: B23K26/073 ,  H01C17/242

Abstract: A uniform laser spot, such as from an imaged shaped Gaussian output (118) or a clipped Gaussian spot, that is less than 20 &mgr;m in diameter can be employed for both thin and thick film resistor trimming to substantially reduce microcracking. These spots can be generated in an ablative, nonthermal, UV laser wavelength to reduce the HAZ and/or shift in TCR.

公开(公告)号：US6025256A

公开(公告)日：2000-02-15

申请号：US898555

申请日：1997-07-22

Applicant: Edward J. Swenson ,  Yunlong Sun ,  Richard S. Harris

Inventor： Edward J. Swenson ,  Yunlong Sun ,  Richard S. Harris

IPC: H01L21/302 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/82 ,  H01L23/52 ,  H01L21/44

CPC classification number: H01L21/76894

Abstract: The present invention provides a method and system for irradiating resist material from multiple target positions (150) on one or more IC chips (12) with individually directed laser output pulses (74, 94). In one embodiment, an IC (12), including one or more etch targets (104, 106) such as conductive links (72, 92), is coated with an etch protection layer (90) of photoresist material. Then, position data direct, toward multiple positions (150) on the photoresist material, individual laser output pulses (94) of predetermined parameters selected to expose the photoresist material. Because photoresist exposure requires less energy than link blowing, low-power UV lasers (120) can be employed, and their shorter wavelengths permit a smaller practical laser output spot size (98). Because the nonablative process does not generate debris, an optical component (148) can be brought within 10 mm of etch protection layer (90) to focus the laser output pulses (94) to a spot size of less than two times the wavelength of laser output (140). Thus, an advantage of this embodiment permits microcircuit manufacturers to decrease the pitch distance (28) between circuit elements (14). After the photoresist layer (90) is developed, the accessible etch target (92) can be etched to repair or reconfigure the IC device. In another embodiment, slightly higher UV power laser output pulses (74) can be employed to ablate an etch protection resist layer (70) so any type of etch protection coating such as nonphotosensitive resist materials can be utilized with substantial manufacturing and cost benefits. Etching of the accessible etch targets (60, 62) follows this process.

Abstract translation: 本发明提供了一种方法和系统，用于利用单独定向的激光输出脉冲（74,94）将多个目标位置（150）的抗蚀剂材料照射在一个或多个IC芯片（12）上。 在一个实施例中，包括一个或多个蚀刻目标（104,106）的IC（12），例如导电连接（72,92），涂覆有光刻胶材料的蚀刻保护层（90）。 然后，将位置数据直接指向光致抗蚀剂材料上的多个位置（150），选择用于曝光光致抗蚀剂材料的预定参数的各个激光输出脉冲（94）。 因为光刻胶的曝光需要比连接吹塑更少的能量，所以可以采用低功率UV激光器（120），而较短的波长允许更小的实际激光输出光斑尺寸（98）。 因为非烧蚀过程不会产生碎屑，所以可将光学部件（148）置于10mm蚀刻保护层（90）内，以将激光输出脉冲（94）聚焦到小于激光波长的两倍的光斑尺寸 输出（140）。 因此，该实施例的优点允许微电路制造商降低电路元件（14）之间的间距（28）。 在光致抗蚀剂层（90）显影之后，可蚀刻可访问蚀刻靶（92）以修复或重新配置IC器件。 在另一个实施例中，可以采用略高的UV功率激光输出脉冲（74）来消融蚀刻保护抗蚀剂层（70），因此可以利用任何类型的蚀刻保护涂层，例如非光敏抗蚀剂材料，具有显着的制造和成本优点。 该可访问蚀刻目标（60,62）的蚀刻遵循该过程。

公开(公告)号：US5590141A

公开(公告)日：1996-12-31

申请号：US262919

申请日：1994-06-20

Applicant: Brian Baird ,  Richard DeFreez ,  Yunlong Sun

Inventor： Brian Baird ,  Richard DeFreez ,  Yunlong Sun

IPC: G02F1/377 ,  H01S3/06 ,  H01S3/0941 ,  H01S3/109 ,  H01S3/117 ,  H01S3/16 ,  H01S5/10 ,  H01S5/12 ,  H01S5/14 ,  H01S3/091

CPC classification number: G02F1/377 ,  H01S3/09415 ,  H01S3/109 ,  H01S3/16 ,  H01S3/025 ,  H01S3/0604 ,  H01S3/0941 ,  H01S3/117 ,  H01S3/1623 ,  H01S3/1648 ,  H01S5/1082 ,  H01S5/12 ,  H01S5/141

Abstract: A laser system uses a broad-area high-power diode laser in cooperation with a nonimaging concentrator, or an unstable resonator semiconductor laser, to end pump a relatively thin, solid-state, highly doped lasant. The laser system generates a very high density of excited ions in the lasant mode volume to produce high peak power pulses having comparable magnitudes over a wide range of pulse repetition frequencies.

Abstract translation: 激光系统使用广域大功率二极管激光器与非成像集中器或不稳定的谐振器半导体激光器协作，将泵送到较薄的固态，高掺杂的烟草。 激光系统在惰性模式体积中产生非常高密度的激发离子，以产生在宽范围的脉冲重复频率上具有相当幅度的高峰值功率脉冲。

公开(公告)号：US5323414A

公开(公告)日：1994-06-21

申请号：US873449

申请日：1992-04-24

Applicant: Brian Baird ,  Richard DeFreez ,  Yunlong Sun

Inventor： Brian Baird ,  Richard DeFreez ,  Yunlong Sun

IPC: H01S3/094 ,  H01S3/06 ,  H01S3/0941 ,  H01S3/11 ,  H01S3/16 ,  H01S3/091

CPC classification number: H01S3/09415 ,  H01S3/16 ,  H01S3/025 ,  H01S3/0604

Abstract: A laser system uses a high-power diode laser in cooperation with a nonimaging concentrator to end pump a relatively thin, solid-state, highly doped lasant. The laser system generates a very high density of excited ions in the lasant mode volume to produce high peak power pulses having comparable magnitudes over a wide range of pulse repetition frequencies.

Abstract translation: 激光系统使用大功率二极管激光器与非成像浓缩器协作来结束泵相对薄的固态，高掺杂的烟草。 激光系统在惰性模式体积中产生非常高密度的激发离子，以产生在宽范围的脉冲重复频率上具有相当幅度的高峰值功率脉冲。

公开(公告)号：US08710402B2

公开(公告)日：2014-04-29

申请号：US11757253

申请日：2007-06-01

Applicant: Weisheng Lei ,  Hisashi Matsumoto ,  Gregg Hardy ,  Yunlong Sun

Inventor： Weisheng Lei ,  Hisashi Matsumoto ,  Gregg Hardy ,  Yunlong Sun

IPC: B23K26/00 ,  B23K26/08

CPC classification number: B23K26/384 ,  B23K26/389 ,  B23K2101/36 ,  H05K3/0035 ,  H05K2201/09827

Abstract: A method of and an apparatus for drilling blind vias with selectable tapers in multilayer electronic circuits permit forming electrical connections between layers while maintaining quality and throughput. The method relies on recognizing that the top diameter of the via and the bottom diameter of the via, which define the taper, are functions of two separate sets of equations. Simultaneous solution of these equations yields a solution space that enables optimization of throughput while maintaining selected taper and quality using temporally unmodified Q-switched CO2 laser pulses with identical pulse parameters. Real time pulse tailoring is not required; therefore, system complexity and cost may be reduced.

Abstract translation: 用于在多层电子电路中钻出具有可选锥度的盲孔的方法和装置允许在层之间形成电连接，同时保持质量和生产量。 该方法依赖于识别定义锥度的通孔的顶部直径和通孔的底部直径是两个单独的方程组的函数。 这些方程的同时解决方案产生一个解空间，可以优化吞吐量，同时使用具有相同脉冲参数的临时未修改的Q开关CO2激光脉冲保持选定的锥度和质量。 不需要实时脉冲裁剪; 因此，系统复杂性和成本可能会降低。

公开(公告)号：US20100140235A1

公开(公告)日：2010-06-10

申请号：US12705433

申请日：2010-02-12

Applicant: Yunlong Sun ,  Edward J. Swenson ,  Richard S. Harris

Inventor： Yunlong Sun ,  Edward J. Swenson ,  Richard S. Harris

IPC: B23K26/00

CPC classification number: B23K26/04 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/0624 ,  B23K26/067 ,  B23K26/361 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/76894 ,  H01L23/5258 ,  H01L2924/0002 ,  H01S3/005 ,  H01S3/0057 ,  H01S3/0085 ,  H01S3/0092 ,  H01S3/1118 ,  H01S3/2383 ,  H01S5/4012 ,  Y10S438/94 ,  H01L2924/00

Abstract: A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.

Abstract translation: 使用一组（50）激光脉冲（52）来切断存储器或其它IC芯片中的导电链路（22）。 组（50）的持续时间优选短于1,000ns; 并且组（50）内的每个激光脉冲（52）的脉冲宽度优选在约0.1ps至30ns的范围内。 传统的激光定位系统（62）可将组（50）视为单个“脉冲”，以便在激光系统（60）激发一组（50）激光脉冲（50） 52）。 可以使用传统的IR波长或它们的谐波。

公开(公告)号：US20080293166A1

公开(公告)日：2008-11-27

申请号：US11754214

申请日：2007-05-25

Applicant: Yunlong Sun ,  Steve Harris

Inventor： Yunlong Sun ,  Steve Harris

IPC: H01L21/268

CPC classification number: H01L21/268 ,  H01L22/12

Abstract: A solution to an interference effect problem associated with laser processing of target structures entails adjusting laser pulse energy or other laser beam parameter, such as laser pulse temporal shape, based on light reflection information of the target structure and passivation layers stacked across a wafer surface or among multiple wafers in a group of wafers. Laser beam reflection measurements on a target link measurement structure and in a neighboring passivation layer area unoccupied by a link enable calculation of the laser pulse energy adjustment for a more consistent processing result without causing damage to the wafer. For thin film trimming on a wafer, similar reflection measurement information of the laser beam incident on the thin film structure and the passivation layer structure with no thin film present can also deliver the needed information for laser parameter selection to ensure better processing quality.

Abstract translation: 与目标结构的激光处理相关的干扰效应问题的解决方案需要基于目标结构的光反射信息和层叠在晶片表面上的钝化层来调整激光脉冲能量或其他激光束参数，例如激光脉冲时间形状，或者 在一组晶片中的多个晶片之间。 在目标链路测量结构上的激光束反射测量以及由链路未占据的相邻钝化层区域中的激光束反射测量使得能够计算激光脉冲能量调节以获得更一致的处理结果而不会损坏晶片。 对于晶片上的薄膜修整，入射到薄膜结构上的激光束的类似反射测量信息和不存在薄膜的钝化层结构也可以提供激光参数选择所需的信息，以确保更好的处理质量。

公开(公告)号：US07420995B2

公开(公告)日：2008-09-02

申请号：US11567150

申请日：2006-12-05

Applicant: Yunlong Sun

Inventor： Yunlong Sun

IPC: H01S3/11

CPC classification number: H01S3/1118 ,  B23K26/0624 ,  B23K26/083 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01S3/0602 ,  H01S3/0816 ,  H01S3/09415 ,  H01S3/11 ,  H01S3/117 ,  H01S3/1643

Abstract: A simultaneously mode-locked, Q-switched laser is configured to prevent loss of mode lock during laser operation. A preferred embodiment prevents loss of mode lock by operating the laser between the Q-switched pulses with a residual level of laser power sufficient to maintain a mode-locked state. The residual laser power output can be blocked by a pulse picking device.

Abstract translation: 同时锁模的Q开关激光器被配置为防止激光器操作期间模式锁定的损失。 优选实施例通过在具有足以维持锁模状态的激光功率的剩余水平的Q开关脉冲之间操作激光来防止模式锁定的损失。 剩余激光功率输出可以被脉冲拾取装置阻挡。

公开(公告)号：US07396706B2

公开(公告)日：2008-07-08

申请号：US11067299

申请日：2005-02-25

Applicant: Yunlong Sun ,  Richard Harris ,  William J. Jordens ,  Lei Sun

Inventor： Yunlong Sun ,  Richard Harris ,  William J. Jordens ,  Lei Sun

IPC: B23K26/36 ,  H01L35/34 ,  H01L21/30

CPC classification number: H01L23/5258 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/067 ,  B23K26/361 ,  B23K26/40 ,  B23K2103/08 ,  B23K2103/10 ,  B23K2103/12 ,  B23K2103/14 ,  B23K2103/172 ,  B23K2103/26 ,  B23K2103/50 ,  H01L2924/0002 ,  H01S3/10046 ,  H01S3/2383 ,  Y10S438/94 ,  H01L2924/00

Abstract: A specially shaped laser pulse energy profile characterized by different laser wavelengths at different times of the profile provides reduced, controlled jitter to enable semiconductor device micromachining that achieves high quality processing and a smaller possible spot size.

Abstract translation: 在轮廓不同时刻，不同激光波长的特殊形状的激光脉冲能量分布提供了减少的受控抖动，从而能够实现高质量处理和较小可能光斑尺寸的半导体器件微机械加工。