公开(公告)号：US07411261B2

公开(公告)日：2008-08-12

申请号：US10773312

申请日：2004-02-09

Applicant: Eun-sung Lee ,  Chung-woo Kim ,  In-sang Song ,  Jong-seok Kim ,  Moon-chul Lee

Inventor： Eun-sung Lee ,  Chung-woo Kim ,  In-sang Song ,  Jong-seok Kim ,  Moon-chul Lee

IPC: H01L29/84

CPC classification number: B81B3/0078 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2203/04 ,  B81C2201/0107 ,  B81C2201/014 ,  H01H59/0009

Abstract: A method for fabricating a MEMS device having a fixing part fixed to a substrate, a connecting part, a driving part, a driving electrode, and contact parts, includes patterning the driving electrode on the substrate; forming an insulation layer on the substrate; patterning the insulation layer and etching a fixing region and a contact region of the insulation layer; forming a metal layer over the substrate; planarizing the metal layer until the insulation layer is exposed; forming a sacrificial layer on the substrate; patterning the sacrificial layer to form an opening exposing a portion of the insulation layer and the metal layer in the fixing region; forming a MEMS structure layer on the sacrificial layer to partially fill the opening, thereby forming sidewalls therein; and selectively removing a portion of the sacrificial layer by etching so that a portion of the sacrificial layer remains in the fixing region.

Abstract translation: 一种用于制造具有固定到基板上的固定部件，连接部件，驱动部件，驱动电极和接触部件的MEMS器件的方法，包括在所述基板上图形化所述驱动电极; 在所述基板上形成绝缘层; 图案化绝缘层并蚀刻绝缘层的固定区域和接触区域; 在衬底上形成金属层; 平坦化金属层直到绝缘层露出; 在所述基板上形成牺牲层; 图案化牺牲层以形成露出固定区域中绝缘层和金属层的一部分的开口; 在所述牺牲层上形成MEMS结构层以部分地填充所述开口，从而在其中形成侧壁; 并且通过蚀刻选择性地去除牺牲层的一部分，使得牺牲层的一部分保留在固定区域中。

公开(公告)号：US20080032501A1

公开(公告)日：2008-02-07

申请号：US11459307

申请日：2006-07-21

Applicant: Jonathan L. Klein ,  Jorg Pilchowski

Inventor： Jonathan L. Klein ,  Jorg Pilchowski

IPC: H01L21/44

CPC classification number: B81C1/00579 ,  B81C2201/0107 ,  B81C2201/014

Abstract: Micro-electromechanical systems (MEMS) pre-fabrication products and methods for forming MEMS devices using silicon-on-metal (SOM) wafers. An embodiment of a method may include the steps of bonding a patterned SOM wafer to a cover wafer, thinning the handle layer of the SOM wafer, selectively removing the exposed metal layer, and either continuing with final metallization or cover bonding to the back of the active layer.

Abstract translation: 微机电系统（MEMS）预制产品和使用金属硅（SOM）晶片形成MEMS器件的方法。 方法的一个实施例可以包括以下步骤：将图案化的SOM晶片结合到覆盖晶片，使SOM晶片的手柄层变薄，选择性地去除暴露的金属层，并且继续进行最后的金属化或覆盖粘合到 活动层

公开(公告)号：US07271022B2

公开(公告)日：2007-09-18

申请号：US11102982

申请日：2005-04-11

Applicant: Weilong Tang ,  Tseng-Yang Hsu ,  Salleh Ismail ,  Nim Hak Tea ,  Melvin B Khoo ,  Raffi Garabedian ,  Lakshimikanth Namburi

Inventor： Weilong Tang ,  Tseng-Yang Hsu ,  Salleh Ismail ,  Nim Hak Tea ,  Melvin B Khoo ,  Raffi Garabedian ,  Lakshimikanth Namburi

IPC: H01L21/00 ,  H01L21/4763

CPC classification number: B81C1/00436 ,  B81C1/00666 ,  B81C2201/0107 ,  B81C2201/0197

Abstract: The present invention relates to a process for forming microstructures on a substrate. A plating surface is applied to a substrate. A first layer of photoresist is applied on top of the plating base. The first layer of photoresist is exposed to radiation in a pattern to render the first layer of photoresist dissolvable in a first pattern. The dissolvable photoresist is removed and a first layer of primary metal is electroplated in the area where the first layer of photoresist was removed. The remainder of the photoresist is then removed and a second layer of photoresist is then applied over the plating base and first layer of primary metal. The second layer of photoresist is then exposed to a second pattern of radiation to render the photoresist dissolvable and the dissolvable photoresist is removed. The second pattern is an area that surrounds the primary structure, but it does not entail the entire substrate. Rather it is an island surrounding the primary metal. The exposed surface of the secondary metal is then machined down to a desired height of the primary metal. The secondary metal is then etched away.

Abstract translation: 本发明涉及一种在基板上形成微观结构的方法。 将电镀表面施加到基板。 将第一层光致抗蚀剂施加在电镀基底上。 第一层光致抗蚀剂以图案暴露于辐射，以使第一层光致抗蚀剂以第一图案溶解。 去除可溶解的光致抗蚀剂，并且在去除第一层光致抗蚀剂的区域中电镀第一层初级金属。 然后除去光致抗蚀剂的其余部分，然后将第二层光致抗蚀剂涂覆在镀覆基底和第一层金属的第一层上。 然后将第二层光致抗蚀剂暴露于第二辐射图案，以使光致抗蚀剂可溶解并除去可溶解的光致抗蚀剂。 第二图案是围绕一次结构的区域，但不包含整个基板。 相反，它是一个围绕着主要金属的岛屿。 然后将次级金属的暴露表面加工到初级金属的期望高度。 然后将二次金属蚀刻掉。

公开(公告)号：US20070199822A1

公开(公告)日：2007-08-30

申请号：US11621429

申请日：2007-01-09

Applicant: Christopher Bang

Inventor： Christopher Bang

IPC: C25D1/00

CPC classification number: G01P15/0802 ,  B33Y10/00 ,  B81B2201/042 ,  B81C99/0085 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/0197 ,  G01P15/125

Abstract: Molded structures, methods of and apparatus for producing the molded structures are provided. At least a portion of the surface features for the molds are formed from multilayer electrochemically fabricated structures (e.g. fabricated by the EFAB™ formation process), and typically contain features having resolutions within the 1 to 100 μm range. The layered structure is combined with other mold components, as necessary, and a molding material is injected into the mold and hardened. The layered structure is removed (e.g. by etching) along with any other mold components to yield the molded article. In some embodiments portions of the layered structure remain in the molded article and in other embodiments an additional molding material is added after a partial or complete removal of the layered structure.

Abstract translation: 提供了模制结构，制造模制结构的方法和设备。 用于模具的表面特征的至少一部分由多层电化学制造的结构（例如通过EFAB TM形成工艺制造）形成，并且通常包含具有在1至100μm范围内的分辨率的特征。 根据需要，将层状结构与其他模具部件组合，并将模塑材料注入模具中并硬化。 层压结构与任何其它模具部件一起被除去（例如通过蚀刻）以产生模塑制品。 在一些实施例中，分层结构的部分保留在模制品中，并且在其它实施例中，在部分或完全去除层状结构之后添加另外的模制材料。

公开(公告)号：US20070196944A1

公开(公告)日：2007-08-23

申请号：US11360131

申请日：2006-02-22

Applicant: Chen-Jean Chou ,  Chun-chen Wu ,  Patrick Brinkley

Inventor： Chen-Jean Chou ,  Chun-chen Wu ,  Patrick Brinkley

IPC: H01L21/00

CPC classification number: B81C99/004 ,  B81B2201/047 ,  B81C1/00714 ,  B81C2201/0107 ,  G02B26/001

Abstract: A method of fabricating a MEMS device includes conditioning of an insulating layer by applying a voltage across the insulating layer via a conductive sacrificial layer for a period of time, prior to removal of the conductive sacrificial layer. This conditioning process may be used to saturate or stabilize charge accumulated within the insulating layer. The resistance across the insulating layer may also be measured to detect possible defects in the insulating layer.

Abstract translation: 制造MEMS器件的方法包括通过在去除导电牺牲层之前通过导电牺牲层在绝缘层上施加电压一段时间来调节绝缘层。 该调理过程可用于饱和或稳定在绝缘层内积聚的电荷。 还可以测量绝缘层两端的电阻，以检测绝缘层中的可能缺陷。

公开(公告)号：US20070158775A1

公开(公告)日：2007-07-12

申请号：US11492671

申请日：2006-07-25

Applicant: Shawn Cunningham ,  Dana DeReus ,  Subham Sett ,  John Gilbert

Inventor： Shawn Cunningham ,  Dana DeReus ,  Subham Sett ,  John Gilbert

IPC: H01L31/058

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: Methods for Implementation of a Switching Function in a Microscale Device and for Fabrication of a Microscale Switch. According to one embodiment, a method is provided for implementing a switching function in a microscale device. The method can include providing a stationary electrode and a stationary contact formed on a substrate. Further, a movable microcomponent suspended above the substrate can be provided. A voltage can be applied between the between a movable electrode of the microcomponent and the stationary electrode to electrostatically couple the movable electrode with the stationary electrode, whereby the movable component is deflected toward the substrate and a movable contact moves into contact with the stationary contact to permit an electrical signal to pass through the movable and stationary contacts. A current can be applied through the first electrothermal component to produce heating for generating force for moving the microcomponent.

Abstract translation: 用于实现微尺度装置中的切换功能以及用于制造微型开关的方法。 根据一个实施例，提供了一种用于在微型设备中实现切换功能的方法。 该方法可以包括提供固定电极和形成在基板上的固定触点。 此外，可以提供悬浮在基板上方的可移动微型部件。 可以在微型组件的可动电极和固定电极之间施加电压，以使可动电极与固定电极静电耦合，由此可动部件朝向基板偏转，并且可动触点移动到与固定触点接触 允许电信号通过可移动和固定触点。 可以通过第一电热部件施加电流以产生用于产生用于移动微型部件的力的加热。

公开(公告)号：US06913942B2

公开(公告)日：2005-07-05

申请号：US10402889

申请日：2003-03-28

Applicant: Satyadev R. Patel ,  Jonathan C. Doan

Inventor： Satyadev R. Patel ,  Jonathan C. Doan

IPC: B81B20060101 ,  B81B3/00 ,  H01L21/00

CPC classification number: B81C1/00476 ,  B81B2201/042 ,  B81C2201/0107

Abstract: A sacrificial layer and a method for applying said sacrificial layer in fabricating microelectromechanical devices are disclosed herein. The sacrificial layer comprises an early transition metal. Specifically, the sacrificial layer comprises an early transition metal element, an early transition metal alloy or an early transition metal silicide.

Abstract translation: 本文公开了牺牲层和在制造微机电装置中施加所述牺牲层的方法。 牺牲层包括早期的过渡金属。 具体地，牺牲层包括早期过渡金属元素，早期过渡金属合金或早期过渡金属硅化物。

公开(公告)号：US06876482B2

公开(公告)日：2005-04-05

申请号：US10291107

申请日：2002-11-08

Applicant: Dana Richard DeReus

Inventor： Dana Richard DeReus

IPC: B81B3/00 ,  B81B7/00 ,  H01H1/04 ,  H01H1/50 ,  H01H59/00 ,  H01H61/04 ,  H01L21/302 ,  H01L23/373 ,  H01L23/522 ,  H01L27/12 ,  H01L29/86 ,  H02N1/00 ,  H02N10/00 ,  G02B26/00 ,  G01J1/36 ,  H01B13/00 ,  H01S57/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: MEMS Device Having Contact and Standoff Bumps and Related Methods. According to one embodiment, a movable MEMS component suspended over a substrate is provided. The component can include a structural layer having a movable electrode separated from a substrate by a gap. The component can also include at least one standoff bump attached to the structural layer and extending into the gap for preventing contact of the movable electrode with conductive material when the component moves.

Abstract translation: 具有接触和间接碰撞的MEMS器件及相关方法。 根据一个实施例，提供悬挂在衬底上的可移动MEMS组件。 该部件可以包括具有通过间隙从基板分离的可移动电极的结构层。 该部件还可以包括附接到结构层并延伸到间隙中的至少一个支座凸块，以防止当部件移动时可动电极与导电材料的接触。

公开(公告)号：US20040188785A1

公开(公告)日：2004-09-30

申请号：US10817270

申请日：2004-04-02

Inventor： Shawn Jay Cunningham ,  Svetlana Tatic-Lucic

IPC: H01L029/82 ,  H01L021/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

公开(公告)号：US20040135219A1

公开(公告)日：2004-07-15

申请号：US10466516

申请日：2004-01-30

Inventor： Michel Despont ,  Roy H Magnuson ,  Ute Drechsler

IPC: H01L021/00 ,  H01L029/82 ,  H01L021/302 ,  H01L021/461

CPC classification number: H01L21/30604 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C1/00801 ,  B81C2201/0107 ,  B81C2201/0114 ,  B81C2201/0133 ,  C23F13/14

Abstract: A method for protecting a material of a microstructure comprising said material and a noble metal layer (8) against undesired galvanic etching during manufacture comprises forming on the structure a sacrificial metal layer (12) having a lower redox potential than said material, the sacrificial metal layer (12) being electrically connected to said noble metal layer (8).

Abstract translation: 一种用于在制造过程中保护包含所述材料的微结构材料和贵金属层（8）的方法，用于防止不期望的电化学蚀刻，包括在所述结构上形成具有比所述材料更低的氧化还原电位的牺牲金属层（12），所述牺牲金属 层（12）电连接到所述贵金属层（8）。