公开(公告)号：US5047821A

公开(公告)日：1991-09-10

申请号：US494044

申请日：1990-03-15

Applicant: Kenneth A. Costello ,  William E. Spicer ,  Verle W. Aebi

Inventor： Kenneth A. Costello ,  William E. Spicer ,  Verle W. Aebi

IPC: H01J1/34 ,  H01L31/108

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: An improved transferred electron III-V semiconductor photocathode comprising an aluminum contact pad and an aluminum grid structure that improves quantum efficiency by removing a major obstacle to electrons escaping into the vacuum and controls dark spot blooming caused by overly bright photon emission sources.

Abstract translation: 一种改进的转移电子III-V半导体光电阴极，其包括铝接触焊盘和铝格栅结构，其通过去除逃逸到真空中的电子的主要障碍并控制由过亮的光子发射源引起的暗斑开花，从而提高量子效率。

公开(公告)号：US4749903A

公开(公告)日：1988-06-07

申请号：US934481

申请日：1986-11-24

Applicant: Bernard Munier ,  Paul de Groot ,  Claude Weibuch ,  Yves Henry

Inventor： Bernard Munier ,  Paul de Groot ,  Claude Weibuch ,  Yves Henry

IPC: H01J1/34 ,  H01J31/10 ,  H01J31/26

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: In one example of construction, a high-performance photocathode has the following structure:a transparent layer formed of P.sup.+ type semiconductor material having a forbidden band of sufficient width to ensure that this layer is transparent to the photons of the light to be detected;an absorption layer constituted by ten first sublayers formed of P.sup.+ type semiconductor material with a forbidden band of sufficiently small width to have two-dimensional electronic properties in order to achieve efficient conversion of the photons into electron-hole pairs and by ten second sublayers interposed between the first and formed of the same material as the transparent layer, the second sublayers being sufficiently thin to permit passage of electrons by tunnel effect and the thickness of the first sublayers being sufficient to permit absorption of the photons of all wavelengths of the light to be detected;a transport layer formed of the same material as the first sublayers;a layer of Cs+O for reducing the energy-gap potential so as to permit emission of electrons into vacuum.

Abstract translation: 在一个结构实例中，高性能光电阴极具有以下结构：由具有足够宽度的禁带的P +型半导体材料形成的透明层，以确保该层对待检测光的光子是透明的; 吸收层由由具有足够小宽度的禁带的P +型半导体材料形成的10个第一子层构成，以具有二维电子特性，以便实现光子有效转换成电子 - 空穴对，以及十分之二的子层，介于 第一层并且由与透明层相同的材料形成，第二子层足够薄以允许通过隧道效应使电子通过，并且第一子层的厚度足以允许所有波长的光的光子吸收为 检测到 由与第一子层相同的材料形成的输送层; 一层用于降低能隙电位的Cs + O，以允许电子发射成真空。

公开(公告)号：US4722852A

公开(公告)日：1988-02-02

申请号：US52294

申请日：1987-05-21

Applicant: Arthur M. E. Hoeberechts ,  Henricus A. M. van Hal ,  Harm Tolner ,  Gerardus G. P. van Gorkom

Inventor： Arthur M. E. Hoeberechts ,  Henricus A. M. van Hal ,  Harm Tolner ,  Gerardus G. P. van Gorkom

IPC: H01J1/30 ,  H01J1/13 ,  H01J1/308 ,  H01J1/32 ,  H01J1/34 ,  H01J9/02 ,  H01J9/04 ,  H01J9/12 ,  C23C14/00

CPC classification number: H01J1/32 ,  H01J1/13 ,  H01J1/308 ,  H01J1/34 ,  H01J2201/3423

Abstract: An electron-emitting surface is provided with a material reducing the electron work function, which is obtained from a suitable reaction. The reaction mixture or the product to be decomposed, for example CsN.sub.3, is present in a surface depression of a semiconductor body, while one or more pn junctions act as a heating diode. Upon heating, cesium is released and deposited on the electron-emitting surface.

Abstract translation: 电子发射表面设置有从合适的反应获得的降低电子功函数的材料。 反应混合物或待分解的产物（例如CsN 3）存在于半导体本体的表面凹陷中，而一个或多个pn结用作加热二极管。 加热时，铯释放并沉积在电子发射表面上。

公开(公告)号：US4683399A

公开(公告)日：1987-07-28

申请号：US278528

申请日：1981-06-29

Applicant: Sidney I. Soclof

Inventor： Sidney I. Soclof

IPC: H01J40/02 ,  H01J1/308 ,  H01J1/34 ,  H01J47/00 ,  H01L29/90 ,  H01J40/16

CPC classification number: H01J1/308 ,  H01J1/34 ,  H01J2201/3423

Abstract: A vacuum electron device including a semiconductor device in a hermetically sealed container enclosing a vacuum. The device includes an electron emissive source for emitting electrons into the vacuum, and a collector for collecting electrons emitted from the electron emissive source and tranported through the vacuum. The device is subjected to a high internal electric field such that electrons in the emissive source are excited to energies greater than the electron affinity of the semiconductor body.

Abstract translation: 一种真空电子器件，其包括封闭真空的密封容器中的半导体器件。 该装置包括用于将电子发射到真空中的电子发射源，以及用于收集从电子发射源发射并传送通过真空的电子的收集器。 该器件受到高内部电场，使得发射源中的电子被激发到大于半导体本体的电子亲和力的能量。

公开(公告)号：US4644221A

公开(公告)日：1987-02-17

申请号：US260959

申请日：1981-05-06

Applicant: William A. Gutierrez ,  Herbert L. Wilson

Inventor： William A. Gutierrez ,  Herbert L. Wilson

IPC: H01J1/34 ,  H01J9/12 ,  H01L31/18 ,  H01J31/00 ,  H01J31/26

CPC classification number: H01L31/18 ,  H01J1/34 ,  H01J9/12 ,  H01J2201/3423

Abstract: A method of forming a variable sensitivity transmission mode negative eleon affinity (NEA) photocathode in which the sensitivity of the photocathode to white or monochromatic light can be varied by varying the backsurface recombination velocity of the photoemitting material with an electric field. The basic structure of the photocathode is comprised of a Group III-V element photoemitter on a larger bandgap Group III-V element window substrate.

Abstract translation: 形成可变灵敏度透射模式负电子亲合力（NEA）光电阴极的方法，其中光电阴极对白色或单色光的灵敏度可以通过用电场改变光发射材料的背表面复合速度来改变。 光电阴极的基本结构由III-V族III族元素光电发射器组成。

公开(公告)号：US4107564A

公开(公告)日：1978-08-15

申请号：US579227

申请日：1975-05-20

Applicant: Alexandr Ivanovich Klimin ,  Alexandr Alexeevich Mostovsky ,  Rafail Lvovich Nemchenok

Inventor： Alexandr Ivanovich Klimin ,  Alexandr Alexeevich Mostovsky ,  Rafail Lvovich Nemchenok

IPC: H01J9/233 ,  H01J1/34 ,  H01J9/12 ,  H01J40/06 ,  H01L31/00 ,  H01J39/00 ,  H01J39/06

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A photoemitter sensitive in the optical range of wavelengths comprises, according to the invention, a substrate made from p-type semiconductor materials of a group of chemical compounds A.sup.II B.sup.IV C.sub.2.sup.V, where A.sup.II are elements belonging to the second subgroup of group II: zinc and cadmium, B.sup.IV are elements belonging to the second subgroup of group IV: germanium, silicon and tin, C.sub.2.sup.V are elements belonging to the second subgroup of group V: phosphorus and arsenic, and a coating of cesium and oxygen. Homogeneity of the bulk and surface properties of the emitter substrate provides high sensitivity in the near-threshold region of photosensitivity corresponding to the width of the forbidden band of the photoemitter substrate.

Abstract translation: 根据本发明，在波长的光学范围内敏感的光电探测器包括由一组化合物AIIBIVC2V的p型半导体材料制成的衬底，其中AII是属于第二组的第二亚组的元素：锌和镉， BIV是属于第IV组第二亚组的元素：锗，硅和锡，C2V是属于第V族第二亚组的元素：磷和砷，以及铯和氧的涂层。 发射极衬底的体积和表面性质的均匀性在对应于光发射器衬底的禁带的宽度的光敏性的近阈值区域中提供高灵敏度。

公开(公告)号：US4063276A

公开(公告)日：1977-12-13

申请号：US735331

申请日：1976-10-26

Applicant: Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

Inventor： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC: H01J1/34 ,  H01J9/12 ,  H01J29/45 ,  H01L27/14 ,  H01L29/161

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J29/451 ,  H01J2201/3423

Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

Abstract translation: 半导体光电子发射器件包括两个或多个不同半导体的混合晶体，形成具有直接跃迁类型的异质结，该直接跃迁类型限定可被光电子激发的第一区域，以及限定禁带宽度大于第二区域的第二区域的间接跃迁类型 第一区域，其表面是光电子发射表面。

公开(公告)号：US4063269A

公开(公告)日：1977-12-13

申请号：US735332

申请日：1976-10-26

Applicant: Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

Inventor： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC: H01J1/34 ,  H01J9/12 ,  H01J29/45 ,  H01L27/14 ,  H01L29/161

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J29/451 ,  H01J2201/3423

Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

公开(公告)号：US4053920A

公开(公告)日：1977-10-11

申请号：US753158

申请日：1976-12-21

Applicant: Ronald E. Enstrom

Inventor： Ronald E. Enstrom

IPC: H01J1/34 ,  H01L27/14

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A method is provided for making an improved photocathode wherein a step ged substrate links a semitransparent cathode made from one p-type III-V compound or complex to a different III-V compound in the form of a host crystal.

Abstract translation: 提供了一种制备改进的光电阴极的方法，其中阶梯分级衬底将由一种p型III-V族化合物或络合物制成的半透明阴极连接到主晶体形式的不同III-V化合物。

公开(公告)号：US3982261A

公开(公告)日：1976-09-21

申请号：US496487

申请日：1974-08-12

Applicant: George A. Antypas

Inventor： George A. Antypas

IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01L21/208 ,  H01L29/205 ,  H01L31/11 ,  H01L33/00 ,  H01S5/323 ,  H01L31/00

CPC classification number: H01J1/34 ,  H01J29/38 ,  H01J31/501 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02625 ,  H01L21/02628 ,  H01L29/205 ,  H01L31/11 ,  H01L33/0025 ,  H01S5/323 ,  H01J2201/3423 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/12

Abstract: An epitaxial layer of a quaternary III-V alloy of Ga, In, As, and P has its constituents proportioned for lattice matching to a substrate having a lattice constant falling within the range of 5.45 to 6.05 A. In addition, the constituents of the alloy are proportioned to provide a selected bandgap energy falling within the range of 2.23 to 0.35 electron volts; this corresponds to wavelengths of 0.55 to 3.5 microns. Near perfect lattice matched heterojunctions are provided between the epitaxial layer and the lattice matched substrate; these are useful for providing improved photocathodes and lasers, particularly in the infrared range of wavelengths between 0.8 and 2.0 microns.

Abstract translation: Ga，In，As和P的季III-V合金的外延层具有与晶格常数落在5.45〜6.05A范围内的基板的晶格匹配成比例的成分。另外， 合金成比例，以提供落在2.23至0.35电子伏范围内的选定带隙能; 这对应于0.55至3.5微米的波长。 在外延层和晶格匹配衬底之间提供近完全晶格匹配异质结; 这些对于提供改进的光电阴极和激光器是有用的，特别是在0.8和2.0微米之间的波长的红外范围内。