公开(公告)号：US6072812A

公开(公告)日：2000-06-06

申请号：US904854

申请日：1997-08-01

Applicant: Lars E. Eng

Inventor： Lars E. Eng

IPC: H01S5/00 ,  H01S5/12 ,  H01S5/30 ,  H01S3/085

CPC classification number: H01S5/1228 ,  H01S5/305

Abstract: The invention is a semiconductor laser including a grating which is formed by regions of high impurity concentration surrounded by material having a lesser impurity concentration. The use of variations in doping concentration rather than different materials to provide reflection in the grating should simplify device fabrication.

Abstract translation: 本发明是一种半导体激光器，其包括由具有较低杂质浓度的材料包围的杂质浓度高的区域形成的光栅。 使用掺杂浓度而不是不同材料的变化在光栅中提供反射将简化器件制造。

公开(公告)号：US5727015A

公开(公告)日：1998-03-10

申请号：US611792

申请日：1996-03-06

Applicant: Koji Takahashi ,  Fumihiro Kounushi ,  Mototaka Taneya

Inventor： Koji Takahashi ,  Fumihiro Kounushi ,  Mototaka Taneya

IPC: H01S5/00 ,  H01S5/12 ,  H01S3/1055

CPC classification number: H01S5/1228

Abstract: A gain coupled distributed feedback semiconductor laser includes an active layer and a diffraction grating provided in the vicinity of the active layer and having a plurality of light absorption layers periodically arranged along a resonator length direction. The order of the diffraction grating is one, a duty of the diffraction grating is in the range of about 0.4 to about 0.8, and a thickness of the light absorption layer is in the range of about 6 nm to about 30 nm.

Abstract translation: 增益耦合分布反馈半导体激光器包括设置在有源层附近的有源层和衍射光栅，并具有沿着谐振器长度方向周期性排列的多个光吸收层。 衍射光栅的顺序是一个，衍射光栅的占空比在约0.4至约0.8的范围内，并且光吸收层的厚度在约6nm至约30nm的范围内。

公开(公告)号：US5550854A

公开(公告)日：1996-08-27

申请号：US346051

申请日：1994-11-29

Applicant: Howard Z. Chen ,  Alfred Y. Cho

Inventor： Howard Z. Chen ,  Alfred Y. Cho

IPC: H01S5/10 ,  H01S5/12 ,  H01S5/34 ,  H01S3/19

CPC classification number: H01S5/10 ,  H01S5/1228 ,  H01S5/3428

Abstract: A laser having a binary stratified structure of alternating sections of graded-index, separate confinement heterostructure (GRINSCH) and semi-insulating semiconductor formed in the direction of light propagation. The active region of the laser includes at least two GRINSCH sections upon a substrate and at least three filler sections sandwiching the at least two GRINSCH sections in an alternating fashion. An analysis of the practical limit on the minimum threshold current and the packaging problems of a semiconductor laser based on the binary stratified structure is included.

Abstract translation: 具有在光传播方向上形成的渐变折射率，分离限制异质结构（GRINSCH）和半绝缘半导体的交替部分的二进制分层结构的激光器。 激光器的有源区域包括在衬底上的至少两个GRINSCH部分和至少三个以交替方式夹持至少两个GRINSCH部分的填充部分。 包括基于二分层结构的半导体激光器的最小阈值电流和封装问题的实际限制的分析。

公开(公告)号：US5536085A

公开(公告)日：1996-07-16

申请号：US413555

申请日：1995-03-30

Applicant: Guo P. Li ,  Toshihiko Makino ,  Andrew M. Sarangan ,  Weiping Huang

Inventor： Guo P. Li ,  Toshihiko Makino ,  Andrew M. Sarangan ,  Weiping Huang

IPC: H01S5/06 ,  H01S5/062 ,  H01S5/12 ,  H01S5/323 ,  H01S5/40 ,  H01S3/10

CPC classification number: H01S5/4031 ,  H01S5/0612 ,  H01S5/0622 ,  H01S5/1228 ,  H01S5/32391 ,  H01S5/4087

Abstract: A multi-wavelength laser array having a plurality of gain-coupled distributed feedback ridge waveguide lasers. The operational wavelength of each laser is established by selecting a width of the ridge waveguide in the range 1.6 .mu.m to 5.2 .mu.m. Fine tuning of each central wavelength is achieved by thermal power to selected waveguides via Titanium thin film resistors integrated into the laser array. A wavelength range of 9 nm is demonstrated utilizing a sixteen element array.

Abstract translation: 一种具有多个增益耦合分布反馈脊波导激光器的多波长激光器阵列。 每个激光器的工作波长是通过选择脊波导宽度在1.6到52微米的范围来建立的。 通过集成到激光器阵列中的钛薄膜电阻器对所选波导的热功率实现每个中心波长的微调。 使用十六元素阵列来证明9nm的波长范围。

公开(公告)号：US5394260A

公开(公告)日：1995-02-28

申请号：US7550

申请日：1993-01-22

Applicant: Masatoshi Suzuki ,  Hideaki Tanaka ,  Yuichi Matsushima

Inventor： Masatoshi Suzuki ,  Hideaki Tanaka ,  Yuichi Matsushima

IPC: G02F1/01 ,  G02F1/015 ,  G02F1/025 ,  H01S5/026 ,  H01S5/12 ,  H04B10/2507 ,  H04B10/04 ,  H04B10/00

CPC classification number: H04B10/25077 ,  G02F1/0121 ,  G02F1/015 ,  G02F1/025 ,  H01S5/0265 ,  G02F2001/0155 ,  G02F2001/0157 ,  G02F2201/16 ,  G02F2203/26 ,  G02F2203/54 ,  H01S5/1228

Abstract: The short optical pulse generator is provided with a semiconductor laser which oscillates continuously at a single wavelength, a semiconductor electro-absorption type optical modulator which performs the intensity modulation of the output light from the laser, and a sinusoidal voltage generator and a DC voltage generator for driving the electro-absorption type optical modulator. A DC voltage is applied to the electro-absorption type optical modulator so that the output light from the laser is sufficiently extinguished. By applying a sinusoidal voltage to the optical modulator, short optical pulses are generated.

Abstract translation: 短脉冲发生器具有以单波长连续振荡的半导体激光器，执行来自激光器的输出光的强度调制的半导体电吸收型光调制器，以及正弦电压发生器和直流电压发生器 用于驱动电吸收型光学调制器。 DC电压被施加到电吸收型光调制器，使得来自激光器的输出光被充分地熄灭。 通过对光调制器施加正弦电压，产生短的光脉冲。

公开(公告)号：US5138625A

公开(公告)日：1992-08-11

申请号：US638589

申请日：1991-01-08

Applicant: Thomas L. Paoli ,  John E. Epler

Inventor： Thomas L. Paoli ,  John E. Epler

IPC: H01S5/00 ,  H01S5/12 ,  H01S5/20 ,  H01S5/223 ,  H01S5/24 ,  H01S5/34 ,  H01S5/40

CPC classification number: B82Y20/00 ,  H01S5/1228 ,  H01S5/20 ,  H01S5/341 ,  H01S5/405 ,  H01S5/2059 ,  H01S5/2068 ,  H01S5/2234 ,  H01S5/2235 ,  H01S5/2237 ,  H01S5/24 ,  H01S5/4043

Abstract: A quantum wire in a groove in a semiconductor layer emits coherent light in a semiconductor laser structure. Linear array, vertical array and two-dimensional array multiple quantum wire semiconductor laser structures are also embodiments of the quantum wire in a semiconductor layer groove. Optical waveguides and reverse bias junctions can also be formed with the quantum wire semiconductor laser structures.

公开(公告)号：US5093835A

公开(公告)日：1992-03-03

申请号：US510839

申请日：1990-04-18

Applicant: Akira Takemoto ,  Hitoshi Watanabe ,  Masatoshi Fujiwara ,  Syoichi Kakimoto

Inventor： Akira Takemoto ,  Hitoshi Watanabe ,  Masatoshi Fujiwara ,  Syoichi Kakimoto

IPC: H01S5/00 ,  H01S5/12

CPC classification number: H01S5/1228 ,  H01S5/12 ,  Y10S148/095

Abstract: A semiconductor laser device having an active layer sandwiched by semiconductor layers having larger energy band gaps than that of the active layer, includes a semiconductor absorption layer having an energy band gap no larger than that of the active layer and having a thickness periodically changing in the cavity length direction of the resonator close to the active layer so that light which is generated at the active layer reaches the absorption layer, and a semiconductor refractive index matching layer having a larger energy band gap than that of the active layer and a higher refractive index than those of the semiconductor layers sandwiching the active layer to make the equivalent refractive indices in layer thickness direction substantially equal along the resonator direction.

Abstract translation: 具有由具有比有源层的能带隙大的能带隙的半导体层夹持的有源层的半导体激光器件包括：半导体吸收层，其能带隙不大于有源层的能带隙，并且具有在 谐振器的腔长度方向靠近有源层，使得在有源层处产生的光到达吸收层，并且具有比有源层的能带隙更大的能带隙和更高折射率的半导体折射率匹配层 夹着有源层的半导体层的厚度使得层厚度方向上的等效折射率沿着谐振器方向基本相等。

公开(公告)号：US4837775A

公开(公告)日：1989-06-06

申请号：US115672

申请日：1987-11-02

Applicant: James T. Andrews ,  Ivan Ladany

Inventor： James T. Andrews ,  Ivan Ladany

IPC: H01S5/12 ,  H01S5/125 ,  H01S5/223 ,  H01S5/24

CPC classification number: H01S5/1228 ,  H01S5/125 ,  H01S5/2237 ,  H01S5/24

Abstract: A distributed feedback laser comprising a semiconductor body having a channel which varies in width in the laterial direction and is periodic in the longitudinal direction. When the laser is electrically excited constructive interference of reflected light gives rise to a stable single wavelength output due to the periodic variations in the channel.

Abstract translation: 一种分布式反馈激光器，包括半导体本体，该半导体主体具有在材料方向上宽度变化并在纵向方向上周期性的通道。 当激光器被激励时，由于通道的周期性变化，反射光的建构性干扰产生稳定的单个波长输出。

公开(公告)号：US4817110A

公开(公告)日：1989-03-28

申请号：US78393

申请日：1987-07-24

Applicant: Yasunori Tokuda ,  Kenzo Fujiwara ,  Noriaki Tsukada ,  Keisuke Kojima ,  Yoshinori Nomura ,  Teruhito Matsui

Inventor： Yasunori Tokuda ,  Kenzo Fujiwara ,  Noriaki Tsukada ,  Keisuke Kojima ,  Yoshinori Nomura ,  Teruhito Matsui

IPC: H01S5/028 ,  H01S5/06 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/12 ,  H01S5/125 ,  H01S5/20 ,  H01S5/32 ,  H01S5/34 ,  H01S5/40 ,  H01S5/50 ,  H01S3/19

CPC classification number: B82Y20/00 ,  H01S5/0601 ,  H01S5/0622 ,  H01S5/10 ,  H01S5/12 ,  H01S5/34 ,  H01S5/4031 ,  H01S5/028 ,  H01S5/06 ,  H01S5/0602 ,  H01S5/06206 ,  H01S5/06213 ,  H01S5/06255 ,  H01S5/06258 ,  H01S5/1039 ,  H01S5/1215 ,  H01S5/1228 ,  H01S5/125 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3216 ,  H01S5/3409 ,  H01S5/3418 ,  H01S5/4087 ,  H01S5/50

Abstract: A semiconductor laser having an active layer of quantum well structure, where the resonator loss is enhanced thereby to conduct an oscillation at a high quantum level.

公开(公告)号：US4796274A

公开(公告)日：1989-01-03

申请号：US13665

申请日：1987-02-12

Applicant: Shigeyuki Akiba ,  Masashi Usami ,  Yukio Noda ,  Masatoshi Suzuki

Inventor： Shigeyuki Akiba ,  Masashi Usami ,  Yukio Noda ,  Masatoshi Suzuki

IPC: H01S5/00 ,  H01S5/12 ,  H01S5/125 ,  H01S3/19

CPC classification number: H01S5/1228 ,  H01S5/12 ,  H01S5/125

Abstract: A semiconductor device with a distributed Bragg reflector is disclosed, in which periodic corrugations are formed between two semiconductor layers along the direction of travel of light. In accordance with the present invention, the periodic corrugations are formed by grid-like layers of a refractory material. The refractory material is an insulator, a refractory metal or a laminate member of an insulator and a refractory metal.

Abstract translation: 公开了一种具有分布式布拉格反射器的半导体器件，其中沿着光的行进方向在两个半导体层之间形成周期性波纹。 根据本发明，周期性波纹由耐火材料的格子状的层形成。 耐火材料是绝缘体，难熔金属或绝缘体和难熔金属的层叠构件。