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199 条记录 (耗时 0.02 秒)

    Twin-free crystal growth of III-V semiconductor material
    66.
    发明授权
    Twin-free crystal growth of III-V semiconductor material 失效
    III-V半导体材料双重晶体生长

    公开(公告)号：US5431125A

    公开(公告)日：1995-07-11

    申请号：US715166

    申请日：1991-06-14

    申请人： Stephen Bachowski ,  David F. Bliss ,  Robert M. Hilton

    发明人： Stephen Bachowski ,  David F. Bliss ,  Robert M. Hilton

    IPC分类号： C30B15/00 ,  C30B15/26 ,  C30B17/00

    CPC分类号： C30B29/40 ,  C30B15/26

    摘要： Twin-free (100) InP crystals of large dimensions and having flat crowns are produced by combining the magnetic liquid encapsulated Kyropoulos (MLEK) process and the magnetic liquid encapsulated Czochralski (MLEC) process. Observation of the flat crown by high intensity light ensures twin-free growth in the magnetic environment.

    摘要翻译： 通过将磁性液体包封的Kyropoulos（MLEK）工艺和磁性液体封装的Czochralski（MLEC）工艺结合在一起，制造了具有扁平冠的双尺寸（100）InP晶体。 通过高强度光线观察平坦冠，确保磁环境中的双向自由增长。

    Method for producing KTIOPO4 single crystal
    67.
    发明授权
    Method for producing KTIOPO4 single crystal 失效
    生产KTIOPO4单晶的方法

    公开(公告)号：US5322588A

    公开(公告)日：1994-06-21

    申请号：US921230

    申请日：1992-07-29

    申请人： Kazutaka Habu ,  Tsutomu Okamoto ,  Koichi Aso ,  Koichi Tatsuki

    发明人： Kazutaka Habu ,  Tsutomu Okamoto ,  Koichi Aso ,  Koichi Tatsuki

    IPC分类号： C30B29/14 ,  C30B9/00 ,  G02F1/35 ,  G02F1/355 ,  C30B17/00

    CPC分类号： C30B9/00 ,  C30B29/14

    摘要： A method is provided for producing a KTiOPO.sub.4 which is grown at a temperature higher than its Curie temperature using a TSSG method. The grown KTiOPO.sub.4 single crystal is maintained in contact with a melt while the crystal is maintained at a temperature higher than the Curie temperature. A d.c. current is applied in this state across a seed crystal and the melt, while the single crystal is cooled to a temperature lower than the Curie temperature. The value of current density D, defined by the formula D=Ip/(a+b), where Ip is the impressed current and a, b are crystal sizes along a and b axes, respectively, is selected to be 0.01 mA/cm.sup.2 .ltoreq.D.ltoreq.1.0 mA/cm.sup.2. In this manner, the produced KTiOPO.sub.4 is processed into a single domain crystal.

    摘要翻译： 提供了一种制备KTiOPO4的方法，其使用TSSG方法在高于其居里温度的温度下生长。 生长的KTiOPO4单晶保持与熔体接触，同时晶体保持在高于居里温度的温度。 一个d.c. 在该状态下通过晶种和熔体施加电流，同时将单晶冷却至低于居里温度的温度。 由式D = Ip /（a + b）定义的电流密度D的值，其中Ip是外加电流，a，b分别是沿a轴和b轴的晶体尺寸，选择为0.01mA / cm 2

    68.
    发明授权
    失效

    公开(公告)号：US4826283B

    公开(公告)日：1991-10-15

    申请号：US20589588

    申请日：1988-06-13

    IPC分类号： G02F1/37 ,  C30B11/00 ,  C30B17/00 ,  G02F1/35 ,  G02F1/355 ,  G02F1/377

    CPC分类号： G02F1/3551 ,  C30B11/00 ,  C30B17/00 ,  C30B29/10 ,  G02F1/377

    摘要： This invention relates to NLO devices made of LiB3O5 crystals, which can be used in a laser system of high power density and relatively large divergence and possess a character of high SHG conversion efficiency. Moreover the NLO devices (including waveguide devices) of this invention are capable of producing coherent harmonics of wavelength below 2000 ANGSTROM and tolerating larger processing error of crystals.

    Method of growing a single-crystal on a single-crystal seed
    69.
    发明授权
    Method of growing a single-crystal on a single-crystal seed 失效
    在单晶种上生长单晶的方法

    公开(公告)号：US3853596A

    公开(公告)日：1974-12-10

    申请号：US26988472

    申请日：1972-07-07

    申请人： DISTLER G ,  TRIODINA N ,  MELNIKOV O ,  VLASOV V ,  LOBACHEV A

    发明人： LOBACHEV A ,  VLASOV V ,  MELNIKOV O ,  TRIODINA N ,  DISTLER G

    IPC分类号： C01B33/26 ,  B01D20060101 ,  C01D3/12 ,  C30B7/00 ,  C30B7/08 ,  C30B7/10 ,  C30B17/00 ,  C30B19/00 ,  C30B19/12 ,  C30B23/00 ,  C30B25/06 ,  C30B29/10 ,  C30B29/54 ,  C30B33/00 ,  H01L21/208 ,  B44D1/16

    CPC分类号： C30B7/00 ,  Y10S117/902

    摘要： A method of growing a single-crystal on a single-crystal seed comprises deposition prior to the beginning of crystallization onto the surface of the single-crystal seed to be overgrown, of a continuous layer of a material having at least one of the characteristics of chemical composition and/or structure which differs from that of the material of the single-crystal seed, said product acquiring polarization properties under the influence of the single-crystal seed which are retained during crystallization. The thickness of the layer is selected in such a manner as to eliminate the defects of the surface of the singlecrystal seed and to retain polarization properties acquired from the single-crystal seed. Then the single-crystal seed with said layer deposited thereon is placed into a crystallization medium under conditions required for growing a single-crystal on said layer of the single-crystal seed.

    摘要翻译： 在单晶种子上生长单晶的方法包括在结晶开始之前沉积到单晶种子的表面上，以形成长满的，具有至少一种特征的材料的连续层 化学组成和/或结构不同于单晶种子材料的化学组成和/或结构，所述产物在结晶期间保留在单晶种子的影响下获得极化特性。 选择层的厚度，以消除单晶种子表面的缺陷并保持从单晶种子获得的偏振特性。 然后将沉积有所述层的单晶种子在单晶种子的所述层上生长单晶所需的条件下放入结晶介质中。