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公开(公告)号:US20210399727A1
公开(公告)日:2021-12-23
申请号:US17296575
申请日:2019-11-27
Applicant: Rambus Inc.
Inventor: Talip Ucar , Frederick A. Ware
Abstract: A transmitter merges even and odd data streams to drive a serialized signal. Identical even and odd drivers take turns driving symbols from respective even and odd streams using respective pull-up transistors and pull-down transistors. Each transistor exhibits a significant source-gate capacitance that is charged when the transistor is turned onto drive the serialized signal. Charging one of these capacitances loads the power supply and thus introduces noise. Each even and odd driver includes a pre-driver that times the charging of a source-gate capacitance in the active driver to the discharge of a source-gate capacitance in the inactive driver. The discharge of the source-gate capacitance in the inactive driver counters the effect of charging the active driver, providing much of the power required by the active driver and thus reducing supply noise.
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742.
公开(公告)号:US20210374004A1
公开(公告)日:2021-12-02
申请号:US17354268
申请日:2021-06-22
Applicant: Rambus Inc.
Inventor: Kenneth L. Wright , Frederick A. Ware
Abstract: A memory system includes dynamic random-access memory (DRAM) components that include interconnected and redundant component data interfaces. The redundant interfaces facilitate memory interconnect topologies that accommodate considerably more DRAM components per memory channel than do traditional memory systems, and thus offer considerably more memory capacity per channel, without concomitant reductions in signaling speeds. The memory components can be configured to route data around defective data connections to maintain full capacity and continue to support memory transactions.
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743.
公开(公告)号:US20210344352A1
公开(公告)日:2021-11-04
申请号:US17321060
申请日:2021-05-14
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , John Eric Linstadt
Abstract: Memory controllers, devices and associated methods are disclosed. In one embodiment, a memory controller includes write circuitry to transmit write data to a memory device, the write circuitry includes a write error detection correction (EDC) encoder to generate first error information associated with the write data. Data bus inversion (DBI) circuitry conditionally inverts data bits associated with each of the write data words based on threshold criteria. Read circuitry receives read data from the memory device. The read circuitry includes a read EDC encoder to generate second error information associated with the received read data. Logic evaluates the first and second error information and conditionally reverse-inverts at least a portion of the read data based on the decoding.
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公开(公告)号:US20210318969A1
公开(公告)日:2021-10-14
申请号:US17228506
申请日:2021-04-12
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Craig E. Hampel
IPC: G06F13/16 , G11C7/10 , G11C5/04 , G11C11/4096 , G06F13/40 , G11C11/408 , G11C11/4093
Abstract: A memory module includes a substrate, plural memory devices, and a buffer. The plural memory devices are organized into at least one rank, each memory device having plural banks. The buffer includes a primary interface for communicating with a memory controller and a secondary interface coupled to the plural memory devices. For each bank of each rank of memory devices, the buffer includes data buffer circuitry and address buffer circuitry. The data buffer circuitry includes first storage to store write data transferred during a bank cycle interval (tRR). The address buffer circuitry includes second storage to store address information corresponding to the data stored in the first storage.
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公开(公告)号:US20210233599A1
公开(公告)日:2021-07-29
申请号:US17226216
申请日:2021-04-09
Applicant: RAMBUS INC.
Inventor: Thomas Vogelsang , William Ng , Frederick A. Ware
Abstract: Embodiments generally relate to integrated circuit devices having through silicon vias (TSVs). In one embodiment, an integrated circuit (IC) device includes a field of TSVs and an address decoder that selectably couples at least one of the TSVs to at least one of a test input and a test evaluation circuit. In another embodiment, a method includes selecting one or more TSVs from a field of TSVs in at least one IC device, and coupling each selected TSV to at least one of a test input and a test evaluation circuit.
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公开(公告)号:US11069392B2
公开(公告)日:2021-07-20
申请号:US17099413
申请日:2020-11-16
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , John Eric Linstadt , Brent Steven Haukness , Kenneth L. Wright , Thomas Vogelsang
IPC: G11C11/24 , G11C11/403 , G11C11/4096 , G11C8/08 , G11C7/10 , G11C7/18 , G11C5/02 , G11C11/408 , G06F12/06 , G11C11/406 , G11C11/409 , G11C11/4097 , G11C11/4091
Abstract: A memory component includes a first memory bank. The first memory bank has a plurality of sub-arrays having sub-rows of memory elements. The memory component includes a write driver, coupled to the first memory bank, to perform a write operation of an entire sub-row of a sub-array. To perform the write operation, the write driver is to load a burst of write data to the memory bank. The memory bank may then activate a plurality of sense amplifiers associated with a plurality of memory elements of the entire sub-row to load the burst of write data to the plurality of sense amplifiers.
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公开(公告)号:US11062748B2
公开(公告)日:2021-07-13
申请号:US16459330
申请日:2019-07-01
Applicant: Rambus Inc.
Inventor: Bret Stott , Frederick A. Ware , Ian P. Shaeffer , Yuanlong Wang
Abstract: A memory controller includes an interface to receive a data strobe signal and corresponding read data. The data strobe signal and the read data correspond to a read command issued by the memory controller, and the read data is received in accordance with the data strobe signal and an enable signal. A circuit in the memory controller is to dynamically adjust a timing offset between the enable signal and the data strobe signal, and control logic is to issue a supplemental read command in accordance with a determination that a time interval since a last read command issued by the memory controller exceeds a predetermined value.
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公开(公告)号:US20210174865A1
公开(公告)日:2021-06-10
申请号:US17103374
申请日:2020-11-24
Applicant: Rambus Inc.
Inventor: Wayne F. Ellis , Wayne S. Richardson , Akash Bansal , Frederick A. Ware , Lawrence Lai , Kishore Ven Kasamsetty
IPC: G11C11/406 , G11C11/4074 , G11C7/20 , G11C7/02 , G11C11/4072 , G11C29/02 , G06F1/3234
Abstract: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.
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749.
公开(公告)号:US20210173800A1
公开(公告)日:2021-06-10
申请号:US17100560
申请日:2020-11-20
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Ely Tsern , John Eric Linstadt , Thomas J. Giovannini , Kenneth L. Wright
Abstract: The embodiments described herein describe technologies of dynamic random access memory (DRAM) components for high-performance, high-capacity registered memory modules, such as registered dual in-line memory modules (RDIMMs). One DRAM component may include a set of memory cells and steering logic. The steering logic may include a first data interface and a second data interface. The first and second data interfaces are selectively coupled to a controller component in a first mode and the first data interface is selectively coupled to the controller component in a second mode and the second data interface is selectively coupled to a second DRAM component in the second mode.
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公开(公告)号:US11016837B2
公开(公告)日:2021-05-25
申请号:US16183470
申请日:2018-11-07
Applicant: Rambus Inc.
Inventor: Thomas J. Giovannini , Catherine Chen , Scott C. Best , John Eric Linstadt , Frederick A. Ware
Abstract: During system initialization, each data buffer device and/or memory device on a memory module is configured with a unique (at least to the module) device identification number. In order to access a single device (rather than multiple buffers and/or memory devices), a target identification number is written to all of the devices using a command bus connected to all of the data buffer devices or memory devices, respectively. The devices whose respective device identification numbers do not match the target identification number are configured to ignore future command bus transactions (at least until the debug mode is turned off.) The selected device that is configured with a device identification number matching the target identification number is configured to respond to command bus transactions.
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