Abstract:
A multi-channel transmitter optical subassembly (TOSA) with an off-center fiber in an optical coupling is disclosed, and can provide passive compensation for beam displacement introduced by optical isolators. The optical coupling receptacle can include an optical isolator configured to receive a focused light beam from a focus lens within the TOSA. The optical coupling receptacle may be offset such that a center line of the focused light beam entering the optical isolator is offset from a center line of a fiber within optical coupling receptacle. Thus the optical isolator receives the focused light beam from the focus lens and introduces beam displacement such that an optical signal is launched generally along a center line of the fiber. Thus the expected beam displacement introduced by the optical isolator is eliminated or otherwise mitigated by the offset between a center line of the fiber and a center position of the focus lens.
Abstract:
A multi-channel transmitter optical subassembly (TOSA) including staggered transistor outline (TO) can laser package placement to provide enhanced coupling and optical power is disclosed, and may be used in an optical transceiver for transmitting an optical signal. The TOSA comprises a housing that includes plurality of sidewall openings with each sidewall opening configured to couple to a TO can laser package to provide coarse wavelength division multiplexing. The housing includes at least first and second sidewall openings on a first sidewall, and a third sidewall opening disposed on a sidewall opposing the first sidewall and being positioned at generally a mid-point between the first and second sidewall openings. This staggered and opposing sidewall opening arrangement allows an increased distance between adjacent sidewall openings, and thus, the TOSA may increase optical power and yield by providing additional space for performing post-attachment alignment of TO can laser packages.
Abstract:
An improved scribe etch process for semiconductor laser chip manufacturing is provided. A method to etch a scribe line on a semiconductor wafer generally includes: applying a mask layer to a surface of the wafer; photolithographically opening a window in the mask layer along the scribe line; etching a trench in the wafer using a chemical etchant that operates on the wafer through the window opening, wherein the chemical etchant selectively etches through crystal planes of the wafer to generate a V-groove profile associated with the trench; and cleaving the wafer along the etched trench associated with the scribe line through application of a force to one or more regions of the wafer.
Abstract:
A multi-channel optical transceiver includes a transmitter optical subassembly (TOSA) with a thermal arrayed waveguide grating (AWG) for multiplexing optical signals and a receiver optical subassembly (ROSA) with an athermal AWG for demultiplexing optical signals. The TOSA may also include a laser array optically coupled to the thermal AWG and a temperature control system thermally coupled to the laser array and the thermal AWG to control temperature for wavelength tuning. The temperature control system in the TOSA may include a thermoelectric cooler (TEC) that cools both the laser array and the thermal AWG. Because the athermal AWG in the ROSA is temperature independent, the ROSA does not include a TEC, thereby reducing power consumption and conserving space. The optical transceiver may be used in a wavelength division multiplexed (WDM) optical system, for example, in an optical line terminal (OLT) in a WDM passive optical network (PON).
Abstract:
A tunable laser with multiple in-line sections generally includes a semiconductor laser body with a plurality of in-line laser sections each configured to be driven independently to generate laser light at a wavelength within a different respective wavelength range. The wavelength of the light generated in each of the laser sections may be tuned, in response to a temperature change, to a channel wavelength within the respective wavelength range. The laser light generated in each selected one of the laser sections is emitted from a front facet of the laser body. By selectively generating light in one or more of the laser sections, one or more channel wavelengths may be selected for lasing and transmission. The tunable laser with multiple in-line sections may be used, for example, in a tunable transmitter in an optical networking unit (ONU) in a WDM passive optical network (PON) to select a transmission channel wavelength.
Abstract:
A tunable laser with multiple in-line sections generally includes a semiconductor laser body with a plurality of in-line laser sections each configured to be driven independently to generate laser light at a wavelength within a different respective wavelength range. The wavelength of the light generated in each of the laser sections may be tuned, in response to a temperature change, to a channel wavelength within the respective wavelength range. A switch module may be configured to couple a signal from a laser driver to a selected one of the plurality of in-line laser sections, wherein the signal modulates the laser light generated by the in-line laser section. The selected in-line section may be DC biased to a lasing state and the non-selected in-line sections may be DC biased to a non-lasing or transparent state.
Abstract:
A bidirectional optical subassembly (BOSA) optical networking unit (ONU) generally includes a BOSA housing. A tunable laser is located in the BOSA housing and is configured to generate a first optical signal for transmission at a first selected wavelength based on temperature control. The tunable laser is a distributed feedback (DFB) laser diode. A thermal management device is also located in the BOSA housing and is configured to provide the temperature control. A photo diode is further located in the BOSA housing and is configured to receive a second optical signal at a second selected wavelength. The BOSA housing comprises an alloy of stainless steel or an alloy of Kovar.
Abstract:
A heated laser package generally includes a laser diode, a heating resistor and a transistor in a single laser package. The heating resistor and transistor form a heating circuit and may be located on a submount adjacent to the laser diode. The transistor is configured to control the drive current to the heating resistor and any additional heat generated by the transistor may contribute to the heating of the laser diode and thus increase the thermal efficiency of the system. The heated laser package may be used in a temperature controlled multi-channel transmitter optical subassembly (TOSA), which may be used in a multi-channel optical transceiver. The optical transceiver may be used in a wavelength division multiplexed (WDM) optical system, for example, in an optical line terminal (OLT) in a WDM passive optical network (PON).
Abstract:
A temperature controlled multi-channel transmitter optical subassembly (TOSA) may be used in a multi-channel optical transceiver. The multi-channel TOSA generally includes an array of lasers optically coupled to an arrayed waveguide grating (AWG) to combine multiple optical signals at different channel wavelengths. A temperature control system may be used to control the temperature of both the array of lasers and the AWG with the same temperature control device, e.g., a thermoelectric cooler (TEC). The multi-channel optical transceiver may also include a multi-channel receiver optical subassembly (ROSA). The optical transceiver may be used in a wavelength division multiplexed (WDM) optical system, for example, in an optical line terminal (OLT) in a WDM passive optical network (PON).
Abstract:
An embodiment of a surface-emitting laser structure includes a first semiconductor region of a first conductivity type coupled to a first contact and a second semiconductor region of the same conductivity type coupled to a second contact. A third semiconductor region of the opposite conductivity type is coupled to a third contact and interposed between the first and second semiconductor regions. An active region is interposed between the first and third regions. In a further embodiment, the laser structure may include a variable refractive index structure interposed between the second and third semiconductor regions. In another embodiment, a surface-emitting laser structure may include an active region between a first semiconductor region of a first conductivity type coupled to a first contact, and a second semiconductor region of opposite conductivity type coupled to a second contact. A third electrical contact is dielectrically spaced from the second semiconductor region.