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    (Al, Ga, In)N-BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME
    72.
    发明申请
    (Al, Ga, In)N-BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME 有权
    （Al，Ga，In）N基化合物半导体及其制造方法

    公开(公告)号：US20080265374A1

    公开(公告)日：2008-10-30

    申请号：US12132760

    申请日：2008-06-04

    Applicant: Chung Hoon LEE

    Inventor： Chung Hoon LEE

    IPC: H01L29/20 ,  H01L21/205

    CPC classification number: H01L33/40 ,  H01L33/0095 ,  H01L33/32

    Abstract: Disclosed are a (Al, Ga, In)N-based compound semiconductor device and a method of fabricating the same. The (Al, Ga, In)N-based compound semiconductor device of the present invention comprises a substrate; a (Al, Ga, In)N-based compound semiconductor layer grown on the substrate; and an electrode formed of at least one material or an alloy thereof selected from the group consisting of Pt, Pd and Au on the (Al, Ga, In)N-based compound semiconductor layer. Further, the method of fabricating the (Al, Ga, In)N-based compound semiconductor device comprises the steps of growing a P layer including P type impurities in a growth chamber; discharging hydrogen and a hydrogen source gas in the growth chamber; lowering the temperature of the (Al, Ga, In)N-based compound semiconductor with the P layer formed thereon to such an extent that it can be withdrawn to the outside from the growth chamber; withdrawing the (Al, Ga, In)N-based compound semiconductor from the growth chamber; and forming an electrode of at least one material or an alloy thereof selected from the group consisting of Pt, Pd and Au on the p layer. According to the present invention, it is possible to sufficiently secure P type conductivity and obtain good ohmic contact characteristics without performing an annealing process. And, no further annealing is necessary when Pt, Pd, Au electrode are used.

    Abstract translation: 公开了一种（Al，Ga，In）N基化合物半导体器件及其制造方法。 本发明的（Al，Ga，In）N基化合物半导体器件包括：衬底; 在衬底上生长的（Al，Ga，In）N基化合物半导体层; 以及在（Al，Ga，In）N基化合物半导体层上由选自Pt，Pd和Au的至少一种材料或其合金形成的电极。 此外，制造（Al，Ga，In）N基化合物半导体器件的方法包括在生长室中生长包含P型杂质的P层的步骤; 在生长室中排出氢和氢源气体; 降低其上形成有P层的（Al，Ga，In）N基化合物半导体的温度至可从生长室抽出到外部的程度; 从生长室中取出（Al，Ga，In）N基化合物半导体; 以及在p层上形成选自Pt，Pd和Au中的至少一种材料或其合金的电极。 根据本发明，可以在不进行退火处理的情况下充分确保P型导电性并获得良好的欧姆接触特性。 并且，当使用Pt，Pd，Au电极时，不需要进一步的退火。

    LIGHT EMITTING DEVICE
    74.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20080067920A1

    公开(公告)日：2008-03-20

    申请号：US11948845

    申请日：2007-11-30

    Applicant: Gundula ROTH ,  Walter TEWS ,  Chung-Hoon LEE

    Inventor： Gundula ROTH ,  Walter TEWS ,  Chung-Hoon LEE

    IPC: H01J1/62

    CPC classification number: C09K11/7734 ,  C09K11/665 ,  C09K11/666 ,  C09K11/753 ,  C09K11/756 ,  C09K11/7735 ,  C09K11/7738 ,  C09K11/7739 ,  C09K11/774 ,  C09K11/7751 ,  C09K11/7756 ,  C09K11/7792 ,  C09K11/7796 ,  H01L33/502 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014

    Abstract: A light emitting device is disclosed. The light emitting device may include a light emitting diode (LED) for emitting light and a phosphor adjacent to the LED. The phosphor may be excitable by light emitted by the LED and may include a first compound having a host lattice comprising first ions and oxygen. In one embodiment, the host lattice may include silicon, the copper ions may be divalent copper ions and the first compound may have an Olivin crystal structure, a β-K2SO4 crystal structure, a trigonal Glaserite (K3Na(SO4)2) or monoclinic Merwinite crystal structure, a tetragonal Ackermanite crystal structure, a tetragonal crystal structure or an orthorhombic crystal structure. In another embodiment, the copper ions do not act as luminescent ions upon excitation with the light emitted by the LED.

    Abstract translation: 公开了一种发光器件。 发光器件可以包括用于发射光的发光二极管（LED）和与LED相邻的磷光体。 磷光体可以由LED发出的光可激发，并且可以包括具有包含第一离子和氧的主晶格的第一化合物。 在一个实施方案中，主晶格可以包括硅，铜离子可以是二价铜离子，并且第一化合物可以具有橄榄石晶体结构，β-K 2 SO 4晶体结构，三角形镓石（K 3 N 3） Na（SO 4 SO 2）2）或单斜晶系的Merwinite晶体结构，四方晶系晶体结构，四方晶系结构或正交晶体结构。 在另一个实施方案中，当由LED发射的光激发时，铜离子不起荧光离子的作用。

    LIGHT EMITTING DEVICE INCLUDING RGB LIGHT EMITTING DIODES AND PHOSPHOR
    75.
    发明申请
    LIGHT EMITTING DEVICE INCLUDING RGB LIGHT EMITTING DIODES AND PHOSPHOR 有权
    包括RGB发光二极管和磷光体的发光装置

    公开(公告)号：US20070284563A1

    公开(公告)日：2007-12-13

    申请号：US11569060

    申请日：2005-05-03

    Applicant: Chung-Hoon LEE ,  Gundula ROTH ,  Walter TEWS

    Inventor： Chung-Hoon LEE ,  Gundula ROTH ,  Walter TEWS

    IPC: H01L29/06

    CPC classification number: H01L33/504 ,  H01L25/0753 ,  H01L33/486 ,  H01L33/50 ,  H01L33/52 ,  H01L33/64 ,  H01L2224/32013 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: Disclosed herein is a light emitting device including at least three light emitting diodes having different peak emission wavelengths to primarily emit light in a blue, green or red wavelength range, and a wavelength-conversion means to convert primary light into secondary light in a visible light wavelength range, The light emitting device of the current invention has a high color temperature of 2,000 to 8,000 K or 10,000 K and a high color rendering index of 90 or more, and emits yellow-green light or orange light having a wide emission wavelength range. Since the light emitting device having high color temperature and excellent color rendering properties can easily realize desired emission on the color coordinate system, it is applicable to mobile phones, notebook computers, and keypads or backlight units for various electronic products, and in particular, automobiles and exterior and interior lighting fixtures.

    Abstract translation: 本文公开了一种发光器件，其包括具有不同峰值发射波长的至少三个发光二极管以主要发射蓝色，绿色或红色波长范围的光;以及波长转换装置，用于将原始光转换成可见光中的次级光 波长范围本发明的发光元件具有2000〜8,000K或10,000K以上的高色温，90以上的高显色指数，并且发射具有宽发光波长范围的黄绿色或橙色光 。 由于具有高色温和优异显色性的发光器件可以容易地实现色坐标系上所需的发射，因此它可应用于各种电子产品的手机，笔记本电脑和键盘或背光单元，特别是汽车 和室内和室内照明灯具。

    Stress control of semiconductor microstructures for thin film growth
    76.
    发明授权
    Stress control of semiconductor microstructures for thin film growth 有权
    用于薄膜生长的半导体微结构的应力控制

    公开(公告)号：US06858888B2

    公开(公告)日：2005-02-22

    申请号：US10302777

    申请日：2002-11-22

    Applicant: Amit Lal ,  Max G. Lagally ,  Chung Hoon Lee ,  Paul Powell Rugheimer

    Inventor： Amit Lal ,  Max G. Lagally ,  Chung Hoon Lee ,  Paul Powell Rugheimer

    IPC: B81B3/00 ,  B81C1/00 ,  H01L29/04 ,  H01L29/786 ,  H01L29/80 ,  H01L29/82 ,  H01L31/036 ,  H01L31/112

    CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/78603 ,  H01L29/78639 ,  Y10S438/962

    Abstract: A suspended semiconductor film is anchored to a substrate at at least two opposed anchor positions, and film segments are deposited on the semiconductor film adjacent to one or more of the anchor positions to apply either tensile or compressive stress to the semiconductor film between the film segments. A crystalline silicon film may be anchored to the substrate and have tensile stress applied thereto to reduce the lattice mismatch between the silicon and a silicon-germanium layer deposited onto the silicon film. By controlling the level of stress in the silicon film, the size, density and distribution of quantum dots formed in a high germanium content silicon-germanium film deposited on the silicon film can be controlled.

    Abstract translation: 悬浮的半导体膜在至少两个相对的锚固位置处锚定到基底，并且膜部分沉积在与一个或多个锚定位置相邻的半导体膜上，以将拉伸或压缩应力施加到膜段之间的半导体膜 。 结晶硅膜可以锚定到基底并且施加拉伸应力以减小硅和沉积在硅膜上的硅 - 锗层之间的晶格失配。 通过控制硅膜中的应力水平，可以控制沉积在硅膜上的高锗含量硅 - 锗膜中形成的量子点的尺寸，密度和分布。

    Ultrasonically actuated needle pump system
    78.
    发明授权
    Ultrasonically actuated needle pump system 有权
    超声波驱动针泵系统

    公开(公告)号：US06638249B1

    公开(公告)日：2003-10-28

    申请号：US09617478

    申请日：2000-07-17

    Applicant: Amit Lal ,  Chung-Hoon Lee

    Inventor： Amit Lal ,  Chung-Hoon Lee

    IPC: A61M100

    CPC classification number: A61B5/14514 ,  A61B5/150022 ,  A61B5/150083 ,  A61B5/150297 ,  A61B5/150389 ,  A61B5/150503 ,  A61B5/150946 ,  A61B5/150977 ,  A61B5/15142 ,  A61B2010/008 ,  A61B2017/00765 ,  A61M37/0092

    Abstract: An ultrasonically driven pump, which may be used for sampling body fluids or atomizing liquids, has a stationary outer needle and an inner needle mounted within the bore of the outer needle. The distal end of the inner needle is positioned adjacent to the distal end of the outer needle. The inner needle is ultrasonically vibrated by an ultrasonic actuator without vibrating the outer needle, with resulting draw of liquid through the distal end of the outer needle into the bore of the inner needle for discharge through the proximal end of the inner needle. The outer needle can be formed to have a penetrating tip suited for penetrating the skin of a subject to allow sampling of body fluids including interstitial fluids. The pump can also be used for atomizing liquid, by drawing liquid from a supply that is pumped from the distal end to an open proximal end of the inner needle where the liquid is discharged by atomization into the atmosphere.

    Abstract translation: 可用于取样体液或雾化液体的超声波泵具有固定的外针和安装在外针的孔内的内针。 内针的远端定位成与外针的远端相邻。 内针被超声波致动器超声波振动，而不会使外针振动，从而将液体从外针的远端抽出到内针的孔中，以通过内针的近端排出。 外针可以形成为具有适于穿透受试者皮肤的穿透尖端，以允许对包括间质液的体液进行取样。 该泵还可用于雾化液体，其是从从远端泵送到内针的开口近端的液体从液体通过雾化排放到大气中排出液体。

    Mobile communication terminal having a light guide plate for indicating receipt of a signal
    79.
    发明授权
    Mobile communication terminal having a light guide plate for indicating receipt of a signal 有权
    移动通信终端具有用于指示信号的接收的导光板

    公开(公告)号：US09167066B2

    公开(公告)日：2015-10-20

    申请号：US11908184

    申请日：2006-03-08

    Applicant: Chung Hoon Lee ,  Sang Min Lee ,  Kwang Il Park

    Inventor： Chung Hoon Lee ,  Sang Min Lee ,  Kwang Il Park

    IPC: H04M1/00 ,  H04M1/22 ,  H04M19/04 ,  H04M1/02

    CPC classification number: H04M1/22 ,  H04M1/0216 ,  H04M19/04 ,  H04M19/048 ,  H04M2250/16

    Abstract: Disclosed is a mobile communication terminal having a light guide plate for indicating the receipt of a signal. This mobile communication terminal comprises an upper frame. A light guide plate is mounted in the upper frame. The light guide plate has an opening corresponding to a region of an image display window. In addition, at least one LED is arranged adjacent to the light guide plate so as to introduce light into the light guide plate. Since the light guide plate is used for indicating the receipt of a signal, it is possible to provide a mobile communication terminal allowing a user to easily recognize a state where a signal has been received.

    Abstract translation: 公开了具有用于指示接收到信号的导光板的移动通信终端。 该移动通信终端包括上框架。 导光板安装在上框架中。 导光板具有对应于图像显示窗口的区域的开口。 此外，至少一个LED布置成与导光板相邻，以将光引入导光板。 由于导光板用于指示信号的接收，所以可以提供允许用户容易地识别已经接收到信号的状态的移动通信终端。

    LIGHT EMITTING DIODE ASSEMBLY
    80.
    发明申请
    LIGHT EMITTING DIODE ASSEMBLY 有权
    发光二极管组件

    公开(公告)号：US20150034979A1

    公开(公告)日：2015-02-05

    申请号：US14123393

    申请日：2012-05-25

    Applicant: Chung Hoon Lee ,  Dae Sung Kal ,  Won Cheol Seo ,  Young Eun Yang

    Inventor： Chung Hoon Lee ,  Dae Sung Kal ,  Won Cheol Seo ,  Young Eun Yang

    IPC: H01L33/64 ,  H01L27/15

    CPC classification number: H01L33/64 ,  F21K9/23 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: Disclosed is a light emitting diode assembly. The light emitting diode assembly comprised: a red light emitting diode chip; a short-wavelength light emitting diode chip emitting a light having a wavelength relatively shorter than that of a light emitted from the red light emitting diode chip; a first heat-dispersion member for dispersing most of the heat generated in the short wavelength light emitting diode chip; and a second heat-dispersion member for dispersing most of the heat generated in the red light emitting diode chip. Further, the second heat-dispersion member has heat dispersion performance relatively superior to that of the first heat dispersion member. Thus, spectrum movement in the red light emitted from the red light emitting diode chip may be prevented so as to prevent a color-coordinate transformation during the operation time of same.

    Abstract translation: 公开了一种发光二极管组件。 发光二极管组件包括：红色发光二极管芯片; 发射波长比从红色发光二极管芯片发射的光的波长相对更短的光的短波长发光二极管芯片; 用于分散在短波长发光二极管芯片中产生的大部分热量的第一散热构件; 以及用于分散红色发光二极管芯片中产生的大部分热量的第二散热构件。 此外，第二散热构件的散热性能比第一散热构件的热分散性能要好。 因此，可以防止从红色发光二极管芯片发射的红色光中的光谱运动，以防止在操作时间相同的色坐标变换。

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