公开(公告)号：US20110010481A1

公开(公告)日：2011-01-13

申请号：US12501389

申请日：2009-07-10

Applicant: Mehrdad Hamadani ,  Deepak Bansal ,  Sam Htin Moy ,  Sreenivasulu Malli ,  David Cheung ,  Mani Kancherla ,  Sridhar Devarapalli

Inventor： Mehrdad Hamadani ,  Deepak Bansal ,  Sam Htin Moy ,  Sreenivasulu Malli ,  David Cheung ,  Mani Kancherla ,  Sridhar Devarapalli

IPC: G06F13/20 ,  G06F13/36

CPC classification number: G06F13/4022 ,  G06F2213/0026 ,  Y02D10/14 ,  Y02D10/151

Abstract: A multi-processor architecture for a network device that includes a plurality of barrel cards, each including: a plurality of processors, a PCIe switch coupled to each of the plurality of processors, and packet processing logic coupled to the PCIe switch. The PCIe switch on each barrel card provides high speed flexible data paths for the transmission of incoming/outgoing packets to/from the processors on the barrel card. An external PCIe switch is commonly coupled to the PCIe switches on the barrel cards, as well as to a management processor, thereby providing high speed connections between processors on separate barrel cards, and between the management processor and the processors on the barrel cards.

Abstract translation: 一种用于网络设备的多处理器架构，其包括多个桶卡，每个桶卡包括：多个处理器，耦合到所述多个处理器中的每一个的PCIe开关以及耦合到所述PCIe开关的分组处理逻辑。 每个机架卡上的PCIe开关提供了高速灵活的数据路径，用于向/从桶卡上的处理器传输输入/输出分组。 外部PCIe交换机通常耦合到桶卡上的PCIe交换机以及管理处理器，从而在单独的桶卡上的处理器之间以及管理处理器和桶卡上的处理器之间提供高速连接。

公开(公告)号：US07778531B2

公开(公告)日：2010-08-17

申请号：US12013083

申请日：2008-01-11

Applicant: David Cheung

Inventor： David Cheung

IPC: A01G13/06

CPC classification number: A61L9/03

Abstract: A disposable air freshener configured to be connected to a USB port of a computer or computer peripheral device. In one embodiment, the disposable air freshener comprises a casing fabricated from a plurality of sections that have generally the same shape. At least one of these sections is configured as scented cardboard. The disposable air freshener has a printed circuit board and a heating element electrically connected to the printed circuit board. A portion of the printed circuit board extends from the casing and is configured to be inserted into a USB port so that electrical power can be applied to the printed circuit board. The heating element generates heat when it receives electrical power from the printed circuit board. Thus, when electrical power is applied to the printed circuit board, the heating element generates heat which causes the scented cardboard to emit a pleasant scent or aroma. The casing of the air freshener can be configured to have almost any geometric shape, e.g. pine tree, hamburger, chocolate bar, etc.

Abstract translation: 配置为连接到计算机或计算机外围设备的USB端口的一次性空气清新器。 在一个实施方案中，一次性空气清新剂包括由具有大致相同形状的多个部分制成的壳体。 这些部分中的至少一个被配置为气味纸板。 一次性空气清新器具有电连接到印刷电路板的印刷电路板和加热元件。 印刷电路板的一部分从壳体延伸并且被配置成插入USB端口，使得电力可以施加到印刷电路板。 当加热元件从印刷电路板接收电力时产生热量。 因此，当对印刷电路板施加电力时，加热元件产生热量，这导致香味纸板发出愉快的香味或香味。 空气清新剂的外壳可以构造成具有几乎任何几何形状，例如， 松树，汉堡包，巧克力棒等

公开(公告)号：US07741965B2

公开(公告)日：2010-06-22

申请号：US11156326

申请日：2005-06-16

Applicant: Kin Yue Albert Lai ,  On Yung Timmy Wong ,  Tak Ki Peter Wan ,  Hon Fai Eric Wong ,  Ngai Ming Tsang ,  Pak Yip Tony Ma ,  Ping Man Jeff Ko ,  Chi Chiu David Cheung

Inventor： Kin Yue Albert Lai ,  On Yung Timmy Wong ,  Tak Ki Peter Wan ,  Hon Fai Eric Wong ,  Ngai Ming Tsang ,  Pak Yip Tony Ma ,  Ping Man Jeff Ko ,  Chi Chiu David Cheung

IPC: G08B26/00

CPC classification number: H01Q1/2208 ,  G06K7/0008 ,  G06K19/0723 ,  H01Q9/16

Abstract: A group of technologies related to RFID reader and tag are described, including: redundant networked multimedia RFID reader, auto-ranging RFID reader, auto-planning RFID reader, smart active antenna RFID reader and novel RFID tags. These enabling technologies bring RFID reader operations into a new level of automation, capability and ease of implementation.

Abstract translation: 描述了与RFID阅读器和标签相关的一组技术，包括：冗余网络多媒体RFID阅读器，自动量测RFID读取器，自动计划RFID读取器，智能有源天线RFID读取器和新型RFID标签。 这些启用技术将RFID读写器操作带入了一个新的自动化水平，能力和易于实施。

公开(公告)号：US07740768B1

公开(公告)日：2010-06-22

申请号：US11548801

申请日：2006-10-12

Applicant: Haruhiro H Goto ,  David Cheung

Inventor： Haruhiro H Goto ,  David Cheung

IPC: C23C16/00 ,  H05H1/24 ,  H01L21/302

CPC classification number: H01L21/67028 ,  H01J2237/335 ,  H01L21/02057 ,  H01L21/0209 ,  H01L21/6719 ,  H01L21/67748 ,  H01L21/68771 ,  Y10S134/902 ,  Y10S438/906

Abstract: A method and apparatus for cleaning a wafer. The wafer is heated and moved to a processing station within the apparatus that has a platen either permanently in a platen down position or is transferable from a platen up position to the platen down position. The wafer is positioned over the platen so as not to contact the platen and provide a gap between the platen and wafer. The gap may be generated by positioning the platen in a platen down position. A plasma flows into the gap to enable the simultaneous removal of material from the wafer front side, backside and edges. The apparatus may include a single processing station having the gap residing therein, or the apparatus may include a plurality of processing stations, each capable of forming the gap therein for simultaneously removing additional material from the wafer front side, backside and edges.

Abstract translation: 一种用于清洁晶片的方法和装置。 晶片被加热并移动到设备内的处理站，该处理站具有永久地处于压板下降位置的压板，或者可以从压板向上位置传递到压板向下位置。 将晶片定位在压板上方，以便不与压板接触并在压板和晶片之间提供间隙。 可以通过将压板放置在压板向下位置来产生间隙。 等离子体流入间隙，以能够从晶片正面，背面和边缘同时移除材料。 该设备可以包括具有位于其中的间隙的单个处理站，或者该设备可以包括多个处理站，每个处理站能够在其中形成间隙，以从晶片前侧，后侧和边缘同时移除附加材料。

公开(公告)号：US20100041010A9

公开(公告)日：2010-02-18

申请号：US11345768

申请日：2006-01-19

Applicant: David Cheung

Inventor： David Cheung

IPC: C12N5/06 ,  A01N1/02

CPC classification number: A01N1/02 ,  A01N1/0226 ,  A61K38/39 ,  A61L27/3604 ,  A61L27/3687

Abstract: The invention relates to a method of treatment of collagenous connective tissue removed from a donor for implant into a recipient which is re-habited or re-colonized by host cells without an immune rejection and inflammatory reaction. After removal from the donor the tissue is trimmed and thereafter soaked in a cold stabilizing solution having a temperature range of 4 to 10 degrees centigrade. The tissue is then soaked at a predetermined temperature in a polyglycol, salt, hydrogen peroxide, and phosphate buffer first solution of predetermined quantities and concentrations and of sufficient ionic strength to permit ground substances to dissociate such that the collagen fibers remain stable. The tissue is then soaked in an alcohol and water solution at a predetermined temperature for a sufficient period of time to remove the residue of the first solution. Following the removal of the residue, the tissue is soaked at a predetermined temperature in a third solution of an anti-inflammatory agent, an anti-thrombic agent, alcohol, and water or sequentially in an anti-inflammatory agent, alcohol, and water solution, and then in an anti-thrombic agent, alcohol and water solution and thereafter stored.

公开(公告)号：US20090261181A1

公开(公告)日：2009-10-22

申请号：US12295647

申请日：2007-05-10

Applicant: David Cheung

Inventor： David Cheung

IPC: B05B1/24

CPC classification number: A61L9/03 ,  H01R13/66

Abstract: A fragrance emitting apparatus (20) for connection to a USB port. In one embodiment, the fragrance emitting apparatus (20) comprises a casing (22) having an interior and a fragrance vent (36A, 36B) in communication with the interior, a heating element (42) located within the casing (22) that generates heat when electrical power is applied thereto, a USB connector (28) connected to the casing (22) and electrically connected to the heating element (42) so as to provide electrical power to the heating element (42) when the USB connector (28) is connected to a USB port, and a stationary fragrance member (50) located within the casing (22) to provide a fragrance, scent or aroma when heat is applied to the fragrance member (50). The fragrance member (50) is proximate to the heating element (42) so that heat generated by the heating element (42) causes the fragrance member (50) to emit a fragrance, scent or aroma which exits the interior of the casing (22) through the vent (36A, 36B). Other embodiments of the apparatus of the present invention are disclosed herein.

Abstract translation: 一种用于连接到USB端口的香味发射设备（20）。 在一个实施例中，香味发射设备（20）包括具有内部的壳体（22）和与内部连通的香味通风口（36A，36B），位于壳体（22）内的加热元件（42），其产生 当连接到其上的热量时，连接到壳体（22）并电连接到加热元件（42）的USB连接器（28），以便当USB连接器（28） ）连接到USB端口，以及位于壳体（22）内的静止香料构件（50），以在向香料构件（50）施加热量时提供香味，气味或香气。 芳香构件（50）靠近加热元件（42），使得由加热元件（42）产生的热量使香料构件（50）发出离开外壳（22）内部的香味，气味或香气 ）通过排气口（36A，36B）。 本文公开了本发明的装置的其它实施例。

公开(公告)号：US20080102644A1

公开(公告)日：2008-05-01

申请号：US11554709

申请日：2006-10-31

Applicant: Haruhiro Harry GOTO ,  Weijie ZHANG ,  David CHEUNG

Inventor： Haruhiro Harry GOTO ,  Weijie ZHANG ,  David CHEUNG

IPC: H01L21/302

CPC classification number: G03F7/427

Abstract: Methods for removing photoresist from a semiconductor substrate are provided. In accordance with an exemplary embodiment of the invention, a method for removing a photoresist from a semiconductor substrate comprises the steps of exposing the semiconductor substrate and the photoresist to a first plasma formed from oxygen, forming an oxide layer on exposed regions of the semiconductor substrate, and subjecting the photoresist to a second plasma formed from oxygen and a fluorine-comprising gas, wherein the first plasma is not the second plasma.

Abstract translation: 提供了从半导体衬底去除光致抗蚀剂的方法。 根据本发明的示例性实施例，从半导体衬底去除光致抗蚀剂的方法包括以下步骤：将半导体衬底和光致抗蚀剂暴露于由氧形成的第一等离子体，在半导体衬底的暴露区域上形成氧化物层 并且对所述光致抗蚀剂进行由氧和含氟气体形成的第二等离子体，其中所述第一等离子体不是所述第二等离子体。

公开(公告)号：US20080044557A1

公开(公告)日：2008-02-21

申请号：US11923037

申请日：2007-10-24

Applicant: WAI-FAN YAU ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

Inventor： WAI-FAN YAU ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC: H05K3/00

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract translation: 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。 氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。 氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。 优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 3 SiH 3 N 2和N 2 O 2的反应制备的。

公开(公告)号：US07205249B2

公开(公告)日：2007-04-17

申请号：US10958772

申请日：2004-10-05

Applicant: David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

Inventor： David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10–250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10–30% of the duty cycle.

Abstract translation: 一种用于通过有机硅烷或有机硅氧烷化合物和氧化性气体以10-250W的低RF功率水平反应沉积低介电常数膜的方法和装置。氧化的有机硅烷或有机硅氧烷膜具有良好的阻挡性能，用作衬垫 或盖层邻近其它电介质层。 氧化的有机硅烷或有机硅氧烷膜也可用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 3 SiH 3或二甲基硅烷（CH 3 3）2 / SO 2 H 2 O 2，和一氧化二氮N 2 O，RF功率水平为约10至200W，或脉冲RF功率水平为约20至250 W占用周期的10-30％。

公开(公告)号：USD534292S1

公开(公告)日：2006-12-26

申请号：US29243324

申请日：2005-11-23

Applicant: Marc Iacovelli ,  David Cheung

Designer： Marc Iacovelli ,  David Cheung