中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

165 records (took 0.028 seconds)

    Apparatus and method for generating digital cinema content and apparatus and method for playing digital cinema content
    71.
    发明授权
    Apparatus and method for generating digital cinema content and apparatus and method for playing digital cinema content 有权
    用于产生数字电影内容的装置和方法以及播放数字电影内容的装置和方法

    公开(公告)号：US08611726B2

    公开(公告)日：2013-12-17

    申请号：US13298844

    申请日：2011-11-17

    Applicant: Yeon Jeong Jeong ,  Kisong Yoon ,  Jung Soo Lee ,  Jinwuk Seok ,  Jeong-Woo Lee ,  Bumho Kim

    Inventor： Yeon Jeong Jeong ,  Kisong Yoon ,  Jung Soo Lee ,  Jinwuk Seok ,  Jeong-Woo Lee ,  Bumho Kim

    IPC: H04N9/80

    CPC classification number: H04N9/87

    Abstract: Provided are an apparatus and method for generating digital cinema content and an apparatus and method for playing digital cinema content. The method of playing digital cinema content using a digital cinema package (DCP) including frame data having a first resolution and length information about frame data having a second resolution lower than the first resolution, and a key delivery message (KDM) includes obtaining a material exchange format (MXF) file and a decryption key by parsing the DCP and the KDM, extracting an encrypted triplet from the MXF file, extracting the length information about the second-resolution frame data using the encrypted triplet and the decryption key, decrypting an amount of data required to decrypt the second-resolution frame data in the first-resolution frame data using the length information about the second-resolution frame data, and decoding the decrypted second-resolution frame data.

    Abstract translation: 提供了一种用于产生数字电影内容的装置和方法以及用于播放数字电影内容的装置和方法。 使用包括具有第一分辨率的帧数据和关于具有低于第一分辨率的第二分辨率的帧数据的长度信息的数字影院包（DCP）以及密钥传递消息（KDM）来播放数字电影内容的方法包括获得材料 交换格式（MXF）文件和解密密钥，通过解析DCP和KDM，从MXF文件中提取加密的三元组，使用加密的三元组和解密密钥提取关于第二分辨率帧数据的长度信息，解密数量 使用关于第二分辨率帧数据的长度信息来解密第一分辨率帧数据中的第二分辨率帧数据所需的数据，以及对解密的第二分辨率帧数据进行解码。

    SEMICONDUCTOR APPARATUS
    72.
    发明申请
    SEMICONDUCTOR APPARATUS 有权

    公开(公告)号：US20130176764A1

    公开(公告)日：2013-07-11

    申请号：US13601552

    申请日：2012-08-31

    Applicant: Jeong Woo LEE

    Inventor： Jeong Woo LEE

    IPC: G11C5/06

    CPC classification number: G11C5/04 ,  H01L25/0655 ,  H01L2224/16225 ,  H01L2924/15192 ,  H01L2924/15311

    Abstract: A semiconductor apparatus includes a controller, a memory, a normal line, a test line, and a path setting unit. The normal line is provided for communication between the controller and the memory. The test line is provided for a test operation of the memory. The path setting unit connects either the normal line or the test line to the memory according to a type of access mode.

    Abstract translation: 半导体装置包括控制器，存储器，法线，测试线和路径设定单元。 为控制器与存储器之间的通讯提供法线。 提供测试线用于存储器的测试操作。 路径设置单元根据访问模式的类型将法线或测试线连接到存储器。

    Semiconductor device having a plurality of repair fuse units
    75.
    发明授权
    Semiconductor device having a plurality of repair fuse units 有权
    具有多个修理保险丝单元的半导体器件

    公开(公告)号：US08110892B2

    公开(公告)日：2012-02-07

    申请号：US12649452

    申请日：2009-12-30

    Applicant: Jeong-Woo Lee ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

    Inventor： Jeong-Woo Lee ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

    IPC: H01L23/52

    CPC classification number: H01L25/0657 ,  H01L22/22 ,  H01L23/481 ,  H01L23/5258 ,  H01L2224/16 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2924/3011

    Abstract: A semiconductor device includes a plurality of stacked semiconductor chips; and a plurality of through-silicon vias (TSVs) including first TSVs and redundant TSVs and configured to commonly transfer a signal to the plurality of stacked semiconductor chips. At least one of the semiconductor chips includes a plurality of repair fuse units configured to store defect information as to at least one defect of the TSVs; and a plurality of latch units allocated to the respective TSVs and configured to store a plurality of signals indicating at least one TSV defect and outputted from the plurality of repair fuse units.

    Abstract translation: 半导体器件包括多个堆叠的半导体芯片; 以及包括第一TSV和冗余TSV的多个穿硅通孔（TSV），并且被配置为共同地将信号传送到多个堆叠的半导体芯片。 半导体芯片中的至少一个包括多个修复熔丝单元，其被配置为存储关于TSV的至少一个缺陷的缺陷信息; 以及分配给各个TSV的多个锁存单元，并被配置为存储指示至少一个TSV缺陷并从多个修复熔丝单元输出的多个信号。

    Method of Controlling Non-Volatile Memory Device
    76.
    发明申请
    Method of Controlling Non-Volatile Memory Device 有权
    控制非易失性存储器件的方法

    公开(公告)号：US20110292729A1

    公开(公告)日：2011-12-01

    申请号：US13116214

    申请日：2011-05-26

    Applicant: Hyun-Jin Choi ,  Chan-Ik Park ,  Jeong-Woo Lee ,  Sung-Joo Yoo

    Inventor： Hyun-Jin Choi ,  Chan-Ik Park ,  Jeong-Woo Lee ,  Sung-Joo Yoo

    IPC: G11C16/10

    CPC classification number: G11C11/5628 ,  G11C16/0483 ,  G11C16/10

    Abstract: A method of controlling a non-volatile memory device includes comparing the number of banks that are in operating states with a threshold value. If the number of the banks is smaller than the threshold value, data stored in a standby bank is read. If there is no bank having data to be read, a standby bank is programmed. If the number of the banks is equal to or greater than the threshold value or if the reading or the programming is performed, it is determined whether there is a reading or programming command to be performed. If there is the reading or programming command to be performed, the process is repeated from the comparing step. The programming may include programming of a most significant bit (MSB) page or a least significant bit (LSB) page.

    Abstract translation: 控制非易失性存储器件的方法包括将处于工作状态的存储体的数量与阈值进行比较。 如果存储体的数量小于阈值，则读取存储在备用库中的数据。 如果没有银行有要读取的数据，则编程一个备用银行。 如果存储体的数量等于或大于阈值，或者如果执行读取或编程，则确定是否存在要执行的读取或编程命令。 如果要执行读取或编程命令，则从比较步骤重复该过程。 编程可以包括对最高有效位（MSB）页或最低有效位（LSB）页的编程。

    NONVOLATILE MEMORY DEVICE, METHODS OF PROGRAMING THE NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE NONVOLATILE MEMORY DEVICE
    77.
    发明申请
    NONVOLATILE MEMORY DEVICE, METHODS OF PROGRAMING THE NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE NONVOLATILE MEMORY DEVICE 有权
    非易失性存储器件，非易失性存储器件的编程方法和包括非易失性存储器件的存储器系统

    公开(公告)号：US20110216587A1

    公开(公告)日：2011-09-08

    申请号：US13038220

    申请日：2011-03-01

    Applicant: Jeong-Woo LEE

    Inventor： Jeong-Woo LEE

    IPC: G11C16/04

    CPC classification number: G11C16/04

    Abstract: Embodiments of the inventive concept provide a nonvolatile memory device. The nonvolatile memory device includes a memory cell array, a read/write circuit, and a backup circuit. The memory cell array includes a first memory block including a first word line having first memory cells and a second word line having second memory cells. Each of the first memory cells and second memory cells configured to store first-bit data and second-bit data. The read/write circuit is configured to program data into the first and second memory cells and read data stored in the first and second memory cells. The backup circuit is configured to, after first-bit data are programmed into the first word line, but before second-bit data are programmed into the first word line, store first-bit data stored in the second memory cells of the second word line

    Abstract translation: 本发明构思的实施例提供一种非易失性存储装置。 非易失性存储器件包括存储单元阵列，读/写电路和备用电路。 存储单元阵列包括第一存储块，其包括具有第一存储单元的第一字线和具有第二存储单元的第二字线。 每个第一存储器单元和第二存储器单元被配置为存储第一位数据和第二位数据。 读/写电路被配置为将数据编程到第一和第二存储器单元中并读取存储在第一和第二存储器单元中的数据。 备用电路被配置为在将第一位数据编程到第一字线之后，但是在将第二位数据编程到第一字线之前，存储存储在第二字线的第二存储器单元中的第一位数据

    REPAIR CIRCUIT AND REPAIR METHOD OF SEMICONDUCTOR APPARATUS
    78.
    发明申请
    REPAIR CIRCUIT AND REPAIR METHOD OF SEMICONDUCTOR APPARATUS 有权
    半导体装置的维修电路和维修方法

    公开(公告)号：US20110156034A1

    公开(公告)日：2011-06-30

    申请号：US12840231

    申请日：2010-07-20

    Applicant: Xiang Hua Cui ,  Jeong Woo Lee ,  Sang Hoon Shin

    Inventor： Xiang Hua Cui ,  Jeong Woo Lee ,  Sang Hoon Shin

    IPC: H01L23/522 ,  H01L21/66

    CPC classification number: G11C29/702

    Abstract: A repair circuit of a semiconductor apparatus includes a plurality of through-silicon vias including repeated sets of one repair through-silicon via and an M number of normal through-silicon vias; a transmission unit configured to multiplex input data at a first multiplexing rate based on control signals, and transmit the multiplexed data to the plurality of through-silicon vias; a reception unit configured to multiplex signals transmitted through the plurality of through-silicon vias at a second multiplexing rate based on the control signals, and generate output data; and a control signal generation unit configured to generate sets of the control signals based on an input number of a test signal.

    Abstract translation: 半导体装置的修复电路包括多个穿硅通孔，包括重复的一组修复通硅通孔和M个通常的硅通孔; 传输单元，被配置为基于控制信号以第一多路复用速率复用输入数据，并将多路复用数据发送到多个通孔通孔; 接收单元，被配置为基于所述控制信号以第二多路复用速率复用通过所述多个穿硅通孔传输的信号，并生成输出数据; 以及控制信号生成单元，被配置为基于测试信号的输入号码生成控制信号的集合。

Patent Agency Ranking