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    Porous thin-film-deposition substrate, electron emitting element, methods of producing them, and switching element and display element
    71.
    发明授权
    Porous thin-film-deposition substrate, electron emitting element, methods of producing them, and switching element and display element 有权
    多孔薄膜沉积基板，电子发射元件，它们的制造方法以及开关元件和显示元件

    公开(公告)号：US07385231B2

    公开(公告)日：2008-06-10

    申请号：US11513223

    申请日：2006-08-31

    申请人： Kiyoshi Fujimoto ,  Masakazu Nakamura

    发明人： Kiyoshi Fujimoto ,  Masakazu Nakamura

    IPC分类号： H01L29/74

    CPC分类号： H01L51/0508 ,  H01J9/025 ,  Y10S977/938

    摘要： A method of producing a porous thin-film-deposition substrate, which has the steps of: placing onto a substrate that has an electrostatic charge on its surface, fine particles with a surface electrostatic charge opposite to the electrostatic charge of the substrate surface, depositing a thin film on the fine-particle-placed substrate, and then removing the fine particles to form fine pores in the thin film; further, a method of producing an electron emitting element, which has the steps of: adding a catalyst metal on a substrate, placing fine particles onto the catalyst-added substrate, depositing a thin film on the fine-particle-placed substrate, then removing the fine particles to form fine pores in the film, and growing needle-shaped conductors on the catalyst metal that is exposed on a bottom face of the fine pore.

    摘要翻译： 一种多孔薄膜沉积基板的制造方法，其特征在于，具有以下步骤：在表面具有静电电荷的基板上放置表面静电电荷与基板表面的静电电荷相反的微粒， 在微细颗粒放置的基板上的薄膜，然后除去细颗粒以在薄膜中形成细孔; 此外，制造电子发射元件的方法具有以下步骤：在基板上添加催化剂金属，将细颗粒放置在添加有催化剂的基板上，在被微粒放置的基板上沉积薄膜，然后除去 该微细颗粒在膜中形成细孔，并且在细孔的底面上露出的催化剂金属上生长的针状导体。

    Porous thin-film-deposition substrate, electron emitting element, methods of producing them, and switching element and display element
    73.
    发明申请
    Porous thin-film-deposition substrate, electron emitting element, methods of producing them, and switching element and display element 有权
    多孔薄膜沉积基板，电子发射元件，它们的制造方法以及开关元件和显示元件

    公开(公告)号：US20070049047A1

    公开(公告)日：2007-03-01

    申请号：US11513223

    申请日：2006-08-31

    申请人： Kiyoshi Fujimoto ,  Masakazu Nakamura

    发明人： Kiyoshi Fujimoto ,  Masakazu Nakamura

    IPC分类号： H01L21/31

    CPC分类号： H01L51/0508 ,  H01J9/025 ,  Y10S977/938

    摘要： A method of producing a porous thin-film-deposition substrate, which has the steps of: placing onto a substrate that has an electrostatic charge on its surface, fine particles with a surface electrostatic charge opposite to the electrostatic charge of the substrate surface, depositing a thin film on the fine-particle-placed substrate, and then removing the fine particles to form fine pores in the thin film; further, a method of producing an electron emitting element, which has the steps of: adding a catalyst metal on a substrate, placing fine particles onto the catalyst-added substrate, depositing a thin film on the fine-particle-placed substrate, then removing the fine particles to form fine pores in the film, and growing needle-shaped conductors on the catalyst metal that is exposed on a bottom face of the fine pore.

    摘要翻译： 一种多孔薄膜沉积基板的制造方法，其特征在于，具有以下步骤：在表面具有静电电荷的基板上放置表面静电电荷与基板表面的静电电荷相反的微粒， 在微细颗粒放置的基板上的薄膜，然后除去细颗粒以在薄膜中形成细孔; 此外，制造电子发射元件的方法具有以下步骤：在基板上添加催化剂金属，将细颗粒放置在添加有催化剂的基板上，在被微粒放置的基板上沉积薄膜，然后除去 该微细颗粒在膜中形成细孔，并且在细孔的底面上露出的催化剂金属上生长的针状导体。

    Welding system for superhigh purity fluid supply pipe system
    80.
    发明授权
    Welding system for superhigh purity fluid supply pipe system 失效
    超高纯度供液管系统焊接系统

    公开(公告)号：US5539171A

    公开(公告)日：1996-07-23

    申请号：US244128

    申请日：1994-05-19

    申请人： Tadahiro Ohmi ,  Masakazu Nakamura

    发明人： Tadahiro Ohmi ,  Masakazu Nakamura

    IPC分类号： B23K9/00 ,  B23K9/028 ,  B23K9/035 ,  B23K9/16 ,  B23K9/32 ,  B23K31/00 ,  B23K37/00 ,  B23K9/167

    CPC分类号： B23K9/0282 ,  B23K9/325 ,  B23K2201/06

    摘要： A welding system for superhigh purity gas supply system, capable of removing easily and completely the metals deposited, during the installation of the superhigh purity gas pipe system, on the outer surfaces of the portions of the pipes which are closed to the portions to be welded thereof and on the inner portions of these pipes, and capable of setting up a superhigh purity gas supply system in a short period of time. A welding system for the gas supply pipe system in which a plurality of members are connected together by welding, characterized in that a first member to be welded(113) is provided with a means for supplying an inert gas or a welding back seal gas and a means for supplying superpure water, a second member to be welded(114) being provided with a means for discharging the inert gas or back seal gas and a means for discharging the superpure water, the first and second members being welded as the inert gas or back seal gas is being supplied, the superpure water being supplied after the welding of these members has been completed, whereby the metal fume deposited on the surfaces of the welded members during the welding thereof can be washed out.

    摘要翻译： PCT No.PCT / JP92 / 01523 Sec。 371日期1994年5月19日 102（e）日期1994年5月19日PCT提交1992年11月20日PCT公布。 出版物WO93 / 09907 日期1993年5月27日一种超高纯度气体供给系统的焊接系统，在超高纯度气体管道系统的安装过程中，能够容易且完全地除去金属的管道的外部表面上， 要被焊接的部分和这些管的内部，并且能够在短时间内设置超高纯度气体供给系统。 一种用于气体供给管系统的焊接系统，其中多个构件通过焊接连接在一起，其特征在于，待焊接的第一构件（113）设置有用于供应惰性气体或回焊密封气体的装置， 用于供应超纯水的装置，待焊接的第二构件（114）设置有用于排出惰性气体或背部密封气体的装置和用于排出超纯水的装置，第一和第二构件被焊接为惰性气体 或背压密封气体，在这些构件的焊接完成之后提供的超纯水已经完成，从而可以洗掉在其焊接期间沉积在焊接构件表面上的金属烟雾。