公开(公告)号：US20070068625A1

公开(公告)日：2007-03-29

申请号：US11233025

申请日：2005-09-23

Applicant: Merritt Funk ,  David Horak ,  Eric Strang ,  Lee Chen

Inventor： Merritt Funk ,  David Horak ,  Eric Strang ,  Lee Chen

IPC: H01L21/306 ,  C23C16/00

CPC classification number: C23C16/4412 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

Abstract translation: 等离子体处理系统包括处理室，被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

公开(公告)号：US07123980B2

公开(公告)日：2006-10-17

申请号：US11087071

申请日：2005-03-23

Applicant: Merritt Funk ,  Raymond Peterson

Inventor： Merritt Funk ,  Raymond Peterson

IPC: G06F19/00

CPC classification number: G05B19/4184 ,  G05B19/41865 ,  G05B23/0259 ,  G05B23/0264 ,  G05B23/0267 ,  G05B2219/31186 ,  G05B2219/32126 ,  G05B2219/32128 ,  G05B2219/33148 ,  G05B2219/33225 ,  G05B2219/45031 ,  H01L21/67276 ,  H01L22/20 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/20 ,  Y02P90/86

Abstract: An Advanced Process Control (APC) system including Graphical User Interfaces (GUIs) is presented for monitoring and controlling a semiconductor manufacturing process that is performed by a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules (chambers), and a number of sensors, and the APC system comprises an APC server, database, interface server, client workstation, and GUI component. The GUI is web-based and is viewable by a user using a web browser.

Abstract translation: 提出了包括图形用户界面（GUI）的高级过程控制（APC）系统，用于监控和控制由半导体处理系统执行的半导体制造过程。 半导体处理系统包括多个处理工具，多个处理模块（室）和多个传感器，APC系统包括APC服务器，数据库，接口服务器，客户端工作站和GUI组件。 GUI是基于Web的，并且可以由使用web浏览器的用户查看。

公开(公告)号：US20060047356A1

公开(公告)日：2006-03-02

申请号：US10927500

申请日：2004-08-27

Applicant: Merritt Funk ,  Wesley Natzle

Inventor： Merritt Funk ,  Wesley Natzle

IPC: G06F19/00

CPC classification number: G05B19/41865 ,  G05B2219/45031 ,  H01L22/20 ,  Y02P80/114 ,  Y02P90/20 ,  Y02P90/86

Abstract: The invention relates to controlling a semiconductor processing system. Among other things, the invention relates to a run-to-run controller to create virtual modules to control a multi-pass process performed by a multi-chamber tool during the processing of a semiconductor wafer.

Abstract translation: 本发明涉及控制半导体处理系统。 其中，本发明涉及一种运行到运行的控制器，用于创建虚拟模块以控制在半导体晶片的处理期间由多室工具执行的多遍处理。

公开(公告)号：US20060007453A1

公开(公告)日：2006-01-12

申请号：US10710447

申请日：2004-07-12

Applicant: David Horak ,  Wesley Natzle ,  Merritt Funk ,  Kevin Lally ,  Daniel Prager

Inventor： David Horak ,  Wesley Natzle ,  Merritt Funk ,  Kevin Lally ,  Daniel Prager

IPC: G06F19/00 ,  G01B11/14

CPC classification number: H01L22/20

Abstract: A system, method and program product for correcting a deviation of a dimension of a feature from a target in a semiconductor process, are disclosed. The invention determines an origin of a deviation in a feature dimension from a target dimension regardless of whether it is based on processing or metrology. Adjustments for wafer processing variation of previous process tools can be fed forward, and adjustments for the process and/or integrated metrology tools may be fed back automatically during the processing of semiconductor wafers. The invention implements process reference wafers to determine the origin in one mode, and measurement reference wafers to determine the origin of deviations in another mode.

Abstract translation: 公开了一种用于在半导体处理中校正特征尺寸与目标的偏差的系统，方法和程序产品。 本发明确定特征维度与目标维度的偏差的起源，而不管其是基于处理还是计量学。 可以向前馈送先前工艺工具的晶片处理变化的调整，并且可以在半导体晶片的处理期间自动地反馈过程和/或集成度量工具的调整。 本发明实施过程参考晶片以确定一种模式中的原点，以及测量参考晶片以确定另一种模式中偏差的起点。

公开(公告)号：US20050177269A1

公开(公告)日：2005-08-11

申请号：US11025227

申请日：2004-12-30

Applicant: Merritt Funk

Inventor： Merritt Funk

IPC: G06F3/048 ,  G05B19/418 ,  H01L21/02 ,  G06F19/00

CPC classification number: G05B19/4187 ,  G05B2219/31186 ,  G05B2219/32128 ,  G05B2219/35504 ,  G05B2219/36121 ,  G05B2219/45031 ,  Y02P90/20 ,  Y02P90/205 ,  Y02P90/86

Abstract: Graphical User Interfaces (GUIs) are presented for configuring and setting-up dynamic sensors for monitoring tool and process performance in a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules (chambers), and a number of sensors. The graphical display is organized so that all significant parameters are clearly and logically displayed so that the user is able to perform the desired configuration and setup tasks with as little input as possible. The GUI is web-based and is viewable by a user using a web browser.

Abstract translation: 提供图形用户界面（GUI），用于配置和设置动态传感器，用于在半导体处理系统中监控工具和过程性能。 半导体处理系统包括多个处理工具，多个处理模块（室）和多个传感器。 图形显示被组织，使得所有重要参数都被清楚和逻辑地显示，使得用户能够尽可能少地输入所需的配置和设置任务。 GUI是基于Web的，并且可以由使用web浏览器的用户查看。

公开(公告)号：US20050047645A1

公开(公告)日：2005-03-03

申请号：US10951161

申请日：2004-09-28

Applicant: Merritt Funk ,  Wei Chen

Inventor： Merritt Funk ,  Wei Chen

IPC: G06F3/14 ,  G05B19/418 ,  G06F3/00 ,  G06F9/44 ,  G06K9/00 ,  H01L21/02

CPC classification number: G05B19/41865 ,  G05B2219/31334 ,  G05B2219/32128 ,  G05B2219/45031 ,  Y02P90/14 ,  Y02P90/16 ,  Y02P90/18 ,  Y02P90/185 ,  Y02P90/20 ,  Y02P90/26 ,  Y02P90/86

Abstract: A GUI is presented for managing a semiconductor processing system that is comprehensible and standardized in format. The graphical display is organized so that all significant parameters are clearly and logically displayed so that the user is able to perform the desired data collection, monitoring, modeling, and troubleshooting tasks with as little input as possible. The GUI is web-based and is viewable by a user using a web browser. The GUI allows a user to display real-time tool and process module statuses based upon process module events and alarm messages, historical data numerically and/or graphically, SPC charts, APC system logs, and Alarm logs. In addition, the GUI allows a user to print graphs and reports, to save data to files, to export data, to import data, and set up or modify the system.

Abstract translation: 提供了一种用于管理可理解和标准化的半导体处理系统的GUI。 图形显示被组织，使得所有重要的参数都被清楚和逻辑地显示，使得用户能够尽可能少的输入来执行期望的数据收集，监视，建模和故障排除任务。 GUI是基于Web的，并且可以由使用web浏览器的用户查看。 GUI允许用户基于过程模块事件和报警消息，数字和/或图形历史数据，SPC图表，APC系统日志和报警日志来显示实时工具和过程模块状态。 此外，GUI允许用户打印图形和报告，将数据保存到文件，导出数据，导入数据以及设置或修改系统。

公开(公告)号：US09151286B2

公开(公告)日：2015-10-06

申请号：US13606689

申请日：2012-09-07

Applicant: Merritt Funk ,  Lee Chen

Inventor： Merritt Funk ,  Lee Chen

IPC: F04B49/06 ,  C23C16/44 ,  H01L21/67 ,  F04D19/04 ,  F04D27/02

CPC classification number: F04B49/06 ,  C23C16/4412 ,  F04D19/042 ,  F04D27/0246 ,  H01L21/67017 ,  H01L21/67253

Abstract: An apparatus and method for controlling pumping characteristics within a semiconductor processing chamber are provided. The apparatus includes levitation of a hollow shaft turbo pump or pump elements, and is configured to control pumping by including adjustments for orientation, position, geometries, and other aspects of the turbo pump. The method includes adjusting design and operational parameters, to control pumping characteristics within the processing chamber.

Abstract translation: 提供一种用于控制半导体处理室内的泵浦特性的装置和方法。 该装置包括悬挂空心轴涡轮泵或泵元件，并且构造成通过包括对涡轮泵的取向，位置，几何形状和其它方面的调整来控制泵送。 该方法包括调整设计和操作参数，以控制处理室内的泵送特性。

公开(公告)号：US08816281B2

公开(公告)日：2014-08-26

申请号：US13433088

申请日：2012-03-28

Applicant: Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

Inventor： Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

IPC: G01T1/16 ,  H01J37/32 ,  H05H1/00 ,  H01J49/48

CPC classification number: H01J37/32935 ,  H01J49/488 ,  H05H1/0081 ,  Y10T29/49002

Abstract: A process by which an ion energy analyzer is manufactured includes processing a first substrate to form an entrance grid having a first channel and a first plurality of openings extending therethrough. A second substrate is processed to form a selection grid having a second channel therein and a second plurality of openings extending therethrough. A third substrate is processed to form an ion collector having a third channel therein. The entrance grid is operably coupled to, and electrically isolated from, the selection grid, which is, in turn, operably coupled to, and electrically isolated from, the ion collector.

Abstract translation: 制造离子能量分析器的过程包括处理第一基底以形成具有第一通道和延伸穿过其中的第一多个开口的入口格栅。 处理第二衬底以形成其中具有第二通道的选择栅格和延伸穿过其中的第二多个开口。 处理第三衬底以形成其中具有第三通道的离子收集器。 入口栅格可操作地耦合到选择栅格并与之电隔离，所述选择栅格又可操作地耦合到离子收集器并与电离隔离。

公开(公告)号：US08747610B2

公开(公告)日：2014-06-10

申请号：US13436760

申请日：2012-03-30

Applicant: Lee Chen ,  Merritt Funk

Inventor： Lee Chen ,  Merritt Funk

IPC: C23F1/00

CPC classification number: H01J37/32834 ,  H01J37/32504 ,  H01J37/32633 ,  H01J37/32935

Abstract: A plasma processing system. The processing system comprises a process chamber having first and second ends arranged such that the first end opposes the second end. A substrate support is positioned at the first end of the process chamber and is configured to support a substrate. An exhaust system is positioned proximate the second end of the process chamber and draws a vacuum on the process chamber. Between the exhaust system and substrate support there is a plurality of super-Debye openings, and between the exhaust system and the plurality of super-Debye openings is a plurality of sub-Debye openings. The super-Debye openings are configured to limit diffusion of plasma while the sub-Debye openings are configured to quench plasma.

Abstract translation: 等离子体处理系统 处理系统包括处理室，该处理室的第一和第二端被布置为使得第一端与第二端相对。 衬底支撑件定位在处理室的第一端处并且被配置为支撑衬底。 排气系统定位在处理室的第二端附近并在处理室上抽真空。 在排气系统和基板支撑件之间存在多个超级德拜开口，并且在排气系统和多个超级德拜开口之间是多个次德开口。 超级德拜开口被配置为限制等离子体的扩散，而副德拜开口被配置为猝灭等离子体。

公开(公告)号：US08415884B2

公开(公告)日：2013-04-09

申请号：US12555080

申请日：2009-09-08

Applicant: Lee Chen ,  Jianping Zhao ,  Ronald V. Bravenec ,  Merritt Funk

Inventor： Lee Chen ,  Jianping Zhao ,  Ronald V. Bravenec ,  Merritt Funk

IPC: H05B31/26

CPC classification number: H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/67005 ,  H01Q13/10

Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having a plurality of slots. The SWP source further comprises a first recess configuration formed in the plasma surface, wherein the first recess configuration is substantially aligned with a first arrangement of slots in the plurality of slots, and a second recess configuration formed in the plasma surface, wherein the second recess configuration is either partly aligned with a second arrangement of slots in the plurality of slots or not aligned with the second arrangement of slots in the plurality of slots. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

Abstract translation: 描述了表面波等离子体（SWP）源。 SWP源包括电磁（EM）波发射器，其被配置为通过在邻近等离子体的EM波发射器的等离子体表面上产生表面波来将期望的EM波模式中的EM能量耦合到等离子体。 EM波发射器包括具有多个槽的缝隙天线。 SWP源还包括形成在等离子体表面中的第一凹陷构型，其中第一凹槽构型基本上与多个槽中的槽的第一布置对准，以及形成在等离子体表面中的第二凹槽构型，其中第二凹槽 配置部分地与多个槽中的槽的第二布置部分对准或者不与多个槽中的槽的第二布置对准。 功率耦合系统耦合到EM波发射器并且被配置为向用于形成等离子体的EM波发射器提供EM能量。