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    Semiconductor device and method for fabricating the same
    71.
    发明授权
    Semiconductor device and method for fabricating the same 有权

    公开(公告)号：US12230696B2

    公开(公告)日：2025-02-18

    申请号：US18606052

    申请日：2024-03-15

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Shinya Sasagawa ,  Motomu Kurata ,  Masashi Tsubuku

    IPC: H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L27/146 ,  H01L29/786

    Abstract: The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

    SEMICONDUCTOR DEVICE
    72.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250056837A1

    公开(公告)日：2025-02-13

    申请号：US18928429

    申请日：2024-10-28

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA

    IPC: H01L29/786 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/10 ,  H01L29/45 ,  H10K59/121

    Abstract: A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.

    SEMICONDUCTOR DEVICE, STORAGE DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
    73.
    发明申请
    SEMICONDUCTOR DEVICE, STORAGE DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250056786A1

    公开(公告)日：2025-02-13

    申请号：US18723731

    申请日：2022-12-15

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Ryota HODO ,  Tatsuya ONUKI ,  Kiyoshi KATO

    IPC: H10B12/00

    Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor; the transistor includes an oxide, a first conductor and a second conductor over the oxide, a first insulator that is placed over the first conductor and the second conductor and includes a first opening and a second opening, a second insulator in the first opening of the first insulator, and a third conductor over the second insulator; the first opening in the first insulator includes a region overlapping with the oxide; the third conductor includes a region overlapping with the oxide with the second insulator therebetween; the capacitor includes the second conductor, a third insulator in the second opening of the first insulator, and a fourth conductor over the third insulator; and the distance between the first conductor and the second conductor is smaller than the width of the first opening in a cross-sectional view of the transistor in a channel length direction.

    SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
    74.
    发明申请
    SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20250054523A1

    公开(公告)日：2025-02-13

    申请号：US18932891

    申请日：2024-10-31

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takeshi AOKI ,  Yoshiyuki KUROKAWA ,  Munehiro KOZUMA ,  Takuro KANEMURA ,  Tatsunori INOUE

    IPC: G11C5/10 ,  G11C11/22 ,  H01L29/66 ,  H01L29/78 ,  H10B53/30

    Abstract: A semiconductor device with a small circuit area and low power consumption is provided. The semiconductor device includes first to fourth cells, a current mirror circuit, and first to fourth wirings, and the first to fourth cells each include a first transistor, a second transistor, and a capacitor. In each of the first to fourth cells, a first terminal of the first transistor is electrically connected to a first terminal of the capacitor and a gate of the second transistor. The first wiring is electrically connected to first terminals of the second transistors in the first cell and the second cell, the second wiring is electrically connected to first terminals of the second transistors in the third cell and the fourth cell, the third wiring is electrically connected to second terminals of the capacitors in the first cell and the third cell, and the fourth wiring is electrically connected to second terminals of the capacitors in the second cell and the fourth cell. The current mirror circuit is electrically connected to the first wiring and the second wiring.

    Connecting member, power supply device, electronic device, and system
    77.
    发明授权
    Connecting member, power supply device, electronic device, and system 有权

    公开(公告)号：US12222683B2

    公开(公告)日：2025-02-11

    申请号：US18205268

    申请日：2023-06-02

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Ryota Tajima ,  Kensuke Yoshizumi

    IPC: G04B37/14 ,  A44C5/00 ,  A44C5/14 ,  G04G17/06 ,  G04G19/00 ,  H01M50/202 ,  H01M50/569 ,  H02J7/00

    Abstract: A device capable of being used for a long time is achieved. A power supply, a connection method of a power supply, or a connecting member, for easy attachment and detachment and non-detachment when in use, is provided. A power supply, a connection method of a power supply, or a connecting member for easy replacement is provided. A highly designed power supply is provided. Power from a battery is supplied to an electronic device through a connecting member including a pipe, a spring, and a pair of pivots. The pair of pivots are electrically insulated from each other, and electrically connected to any one of a pair of electrodes of the battery. The electronic device into which the pair of pivots are inserted includes a pair of bearings capable of receiving power.

    DISPLAY APPARATUS
    78.
    发明申请
    DISPLAY APPARATUS 有权

    公开(公告)号：US20250048909A1

    公开(公告)日：2025-02-06

    申请号：US18718878

    申请日：2022-12-16

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Yuichi YANAGISAWA ,  Daiki NAKAMURA ,  Hiromi SAWAI ,  Ryota HODO

    IPC: H10K59/88 ,  H10K59/122 ,  H10K59/80

    Abstract: A display apparatus with high display quality is provided. In the display apparatus, a dummy pixel portion is a region that does not contribute to display. The dummy pixel portion is positioned adjacent to the outside of a pixel portion in a plan view. The pixel portion includes a first insulating layer, a first pixel electrode and a second pixel electrode over the first insulating layer, a first layer over the first pixel electrode, a second layer over the second pixel electrode, and a common electrode over the first layer and the second layer. The dummy pixel portion includes the first insulating layer, a first conductive layer and a second conductive layer over the first insulating layer, a third layer over the first conductive layer, a fourth layer over the second conductive layer, and the common electrode over the third layer and the fourth layer. The first insulating layer includes a first groove and a second groove. The first groove includes a first region overlapping with the first pixel electrode and a second region overlapping with the second pixel electrode. The second groove includes a third region overlapping with the first conductive layer and a fourth region overlapping with the second conductive layer.

    SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    79.
    发明申请
    SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250048676A1

    公开(公告)日：2025-02-06

    申请号：US18713288

    申请日：2022-11-17

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Ryota HODO ,  Satoru SAITO ,  Hitoshi KUNITAKE ,  Shunpei YAMAZAKI ,  Masahiro WAKUDA ,  Toshiki HAMADA

    IPC: H01L29/423 ,  H01L29/66 ,  H01L29/786

    Abstract: A semiconductor device that can be miniaturized or highly integrated and a manufacturing method thereof are provided. A semiconductor device includes a metal oxide, a first conductor and a second conductor over the metal oxide, a first insulator positioned over the metal oxide and between the first conductor and the second conductor, a second insulator over the first insulator, a third insulator over the second insulator, a third conductor over the third insulator, a fourth insulator positioned between the first conductor and the first insulator, and a fifth insulator positioned between the second conductor and the first insulator. The first insulator is in contact with the top surface and the side surface of the metal oxide, and oxygen is less likely to pass through the first insulator than the second insulator. The first conductor, the second conductor, the fourth insulator, and the fifth insulator contain the same metal element. In a cross-sectional view in a channel length direction, a distance from the first conductor to the first insulator is greater than or equal to a thickness of the first insulator and less than or equal to a distance from the third conductor to the metal oxide.

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