公开(公告)号：US20240141486A1

公开(公告)日：2024-05-02

申请号：US18410370

申请日：2024-01-11

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Todd Robert Dunn ,  Michael Eugene Givens ,  Jereld Lee Winkler ,  Paul Ma ,  Eric Shero

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/50 ,  C23C16/52

CPC classification number: C23C16/45512 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52

Abstract: Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

公开(公告)号：US20230203644A1

公开(公告)日：2023-06-29

申请号：US18170286

申请日：2023-02-16

Applicant: ASM IP HOLDING B.V.

Inventor： Michael Eugene Givens ,  Eva Tois ,  Suvi Haukka ,  Daria Nevstrueva ,  Charles Dezelah

IPC: C23C16/04 ,  C23C16/20 ,  C23C28/00 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C16/04 ,  C23C16/20 ,  C23C28/341 ,  C23C16/0281 ,  C23C16/45534 ,  C23C16/56

Abstract: In some embodiments, methods are provided for simultaneously and selectively depositing a first material on a first surface of a substrate and a second, different material on a second, different surface of the same substrate using the same reaction chemistries. For example, a first material may be selectively deposited on a metal surface while a second material is simultaneously and selectively deposited on an adjacent dielectric surface. The first material and the second material have different material properties, such as different etch rates.

公开(公告)号：US11664222B2

公开(公告)日：2023-05-30

申请号：US17072525

申请日：2020-10-16

Applicant: ASM IP Holding B.V.

Inventor： Oreste Madia ,  Andrea Illiberi ,  Michael Eugene Givens ,  Tatiana Ivanova ,  Charles Dezelah ,  Varun Sharma

IPC: H01L21/02

CPC classification number: H01L21/0262 ,  H01L21/02565 ,  H01L21/02639

Abstract: Methods of forming indium gallium zinc oxide (IGZO) films by vapor deposition are provided. The IGZO films may, for example, serve as a channel layer in a transistor device. In some embodiments atomic layer deposition processes for depositing IGZO films comprise an IGZO deposition cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase indium precursor, a vapor phase gallium precursor, a vapor phase zinc precursor and an oxygen reactant. In some embodiments the ALD deposition cycle additionally comprises contacting the substrate with an additional reactant comprising one or more of NH3, N2O, NO2 and H2O2.

公开(公告)号：US11608557B2

公开(公告)日：2023-03-21

申请号：US17216260

申请日：2021-03-29

Applicant: ASM IP Holding B.V.

Inventor： Michael Eugene Givens ,  Eva Tois ,  Suvi Haukka ,  Daria Nevstrueva ,  Charles Dezelah

IPC: C23C16/04 ,  C23C16/20 ,  C23C28/00 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56

Abstract: In some embodiments, methods are provided for simultaneously and selectively depositing a first material on a first surface of a substrate and a second, different material on a second, different surface of the same substrate using the same reaction chemistries. For example, a first material may be selectively deposited on a metal surface while a second material is simultaneously and selectively deposited on an adjacent dielectric surface. The first material and the second material have different material properties, such as different etch rates.

公开(公告)号：US11521851B2

公开(公告)日：2022-12-06

申请号：US17162279

申请日：2021-01-29

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Michael Eugene Givens ,  Qi Xie ,  Charles Dezelah ,  Giuseppe Alessio Verni

IPC: H01L21/02 ,  H01L29/423 ,  H01L29/06 ,  H01L29/66 ,  H01L27/092

Abstract: Methods and systems for depositing vanadium and/or indium layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium and/or indium layer onto the surface of the substrate. The cyclical deposition process can include providing a vanadium and/or indium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process. Exemplary structures can include field effect transistor structures, such as gate all around structures. The vanadium and/or indium layers can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

公开(公告)号：US11411088B2

公开(公告)日：2022-08-09

申请号：US17026510

申请日：2020-09-21

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Peng-Fu Hsu ,  Michael Eugene Givens ,  Qi Xie

IPC: H01L29/40 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/40 ,  H01L29/51 ,  H01L29/78 ,  H01L29/161

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

公开(公告)号：US20210358745A1

公开(公告)日：2021-11-18

申请号：US17390608

申请日：2021-07-30

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Maes ,  Michael Eugene Givens ,  Suvi P. Haukka ,  Vamsi Paruchuri ,  Ivo Johannes Raaijmakers ,  Shaoren Deng ,  Andrea Illiberi ,  Eva E. Tois ,  Delphine Longrie ,  Charles Dezelah ,  Marko Tuominen

IPC: H01L21/02

Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

公开(公告)号：US11145506B2

公开(公告)日：2021-10-12

申请号：US16588600

申请日：2019-09-30

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Hub Maes ,  Michael Eugene Givens ,  Suvi P. Haukka ,  VamsI Paruchuri ,  Ivo Johannes Raaijmakers ,  Shaoren Deng ,  Andrea Illiberi ,  Eva E. Tois ,  Delphine Longrie

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/67

Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

公开(公告)号：US20210118671A1

公开(公告)日：2021-04-22

申请号：US17072524

申请日：2020-10-16

Applicant: ASM IP Holding B.V.

Inventor： Oreste Madia ,  Andrea Illiberi ,  Giuseppe Alessio Verni ,  Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

Abstract: Methods of forming indium germanium zinc oxide (IGeZO) films by vapor deposition are provided. The IGeZO films may, for example, serve as a channel layer in a transistor device. In some embodiments atomic layer deposition processes for depositing IGeZO films comprise an IGeZO deposition cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase indium precursor, a vapor phase germanium precursor, a vapor phase zinc precursor and an oxygen reactant. In some embodiments the ALD deposition cycle additionally comprises contacting the substrate with an additional reactant comprising one or more of NH3, N2O, NO2 and H2O2.

公开(公告)号：US20200343358A1

公开(公告)日：2020-10-29

申请号：US16924595

申请日：2020-07-09

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Petri Raisanen ,  Michael Eugene Givens

IPC: H01L29/51 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/455 ,  H01L29/49 ,  C23C16/34

Abstract: Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.