Overlay metrology method and apparatus using more than one grating per measurement direction
    71.
    发明授权
    Overlay metrology method and apparatus using more than one grating per measurement direction 有权
    覆盖测量方法和装置每测量方向使用多个光栅

    公开(公告)号:US07333200B2

    公开(公告)日:2008-02-19

    申请号:US11635878

    申请日:2006-12-08

    摘要: A method of controlling the lithography process used to fabricate patterns on layers of a semiconductor wafer is disclosed. The method includes providing at least two scatterometry targets, each target having a first pattern formed in an upper layer substantially aligned with a second pattern formed in a lower layer. The targets are optically inspected. A theoretical model of each target is created, with each model including a plurality of unknown parameters defining the target and wherein at least one of the parameters is common to each of the targets. A regression analysis is performed wherein the measured optical response of the targets is compared to calculated optical responses generated by varying the values of the parameters applied to the model. During the regression analysis, a common value for the common parameter is maintained. The results are used to control the lithography process.

    摘要翻译: 公开了一种控制用于在半导体晶片的层上制造图案的光刻工艺的方法。 该方法包括提供至少两个散射测量目标,每个目标具有形成在与形成在下层中的第二图案基本对准的上层中的第一图案。 目标被光学检查。 创建每个目标的理论模型,其中每个模型包括定义目标的多个未知参数,并且其中至少一个参数对于每个目标共同。 进行回归分析,其中将所测量的目标的光学响应与通过改变应用于模型的参数的值产生的计算的光学响应进行比较。 在回归分析期间,维持常用参数的公用值。 结果用于控制光刻工艺。

    Overlay targets with isolated, critical-dimension features and apparatus to measure overlay
    72.
    发明授权
    Overlay targets with isolated, critical-dimension features and apparatus to measure overlay 失效
    覆盖目标与隔离的,关键维度的功能和设备来测量覆盖

    公开(公告)号:US07283237B2

    公开(公告)日:2007-10-16

    申请号:US11218127

    申请日:2005-09-01

    IPC分类号: G01B11/00

    摘要: An optical metrology system is disclosed which is configured to minimize the measurement of specularly reflected light and measure primarily scattered light. The system is similar to prior art beam profile measurements but includes a movable baffle to selectively block specularly reflected light. In addition, certain non-periodic, isolated targets are disclosed suitable for evaluating overlay registration.

    摘要翻译: 公开了一种光学测量系统,其被配置为最小化镜面反射光的测量并且主要测量散射光。 该系统类似于现有技术的光束轮廓测量,但包括可移动挡板以选择性地阻挡镜面反射光。 此外,公开了适合于评估覆盖物登记的某些非周期性孤立靶标。

    Method and apparatus for position-dependent optical metrology calibration
    73.
    发明授权
    Method and apparatus for position-dependent optical metrology calibration 失效
    用于位置相关光学计量校准的方法和装置

    公开(公告)号:US07224450B2

    公开(公告)日:2007-05-29

    申请号:US11364312

    申请日:2006-02-28

    IPC分类号: G01N21/01 H01G3/00 B25J1/00

    摘要: A calibration method suitable for highly precise and highly accurate surface metrology measurements is described. In preferred embodiments, an optical inspection tool including a movable optics system is characterized in terms of position and wavelength dependent quantities over a range of motion. Once the position-dependant quantities are determined at various wavelengths and positions, they are stored and used to interpret data from test wafers having an unknown metrology. Free of position-dependent variations and other information pertaining to the measurement system, the accuracy of the resulting wafer measurement more closely matches the precision of the tool than existing techniques. In particular embodiments, a portion of the characterization of the optical system is accomplished by using tilted black glass to provide a non-reflective reference.

    摘要翻译: 描述了适用于高精度和高精度表面测量测量的校准方法。 在优选实施例中,包括可移动光学系统的光学检查工具的特征在于在运动范围上的位置和波长相关量。 一旦在各种波长和位置确定位置相关量,就将它们存储并用于从具有未知计量学的测试晶片中解释数据。 没有与位置相关的变化和与测量系统相关的其他信息,所得到的晶片测量的精度与现有技术的精度更接近。 在特定实施例中,通过使用倾斜的黑色玻璃来提供非反射参考来实现光学系统的表征的一部分。

    Overlay targets with isolated, critical-dimension features and apparatus to measure overlay
    77.
    发明申请
    Overlay targets with isolated, critical-dimension features and apparatus to measure overlay 审中-公开
    覆盖目标与隔离的,关键维度的功能和设备来测量覆盖

    公开(公告)号:US20060082792A1

    公开(公告)日:2006-04-20

    申请号:US11295304

    申请日:2005-12-06

    IPC分类号: G01B11/14

    摘要: An optical metrology system is disclosed which is configured to minimize the measurement of specularly reflected light and measure primarily scattered light. The system is similar to prior art beam profile measurements but includes an optical arrangement for increasing the amount of scattered light being monitored in comparison to the amount of specularly reflected light being monitored.

    摘要翻译: 公开了一种光学测量系统,其被配置为最小化镜面反射光的测量并且主要测量散射光。 该系统类似于现有技术的光束轮廓测量,但是包括用于增加被监视的散射光量与被监视的镜面反射光量相比较的光学装置。

    Method and system for reducing the impact of across-wafer variations on critical dimension measurements

    公开(公告)号:US20060073686A1

    公开(公告)日:2006-04-06

    申请号:US10971350

    申请日:2004-10-22

    IPC分类号: H01L21/22

    摘要: First and second exposures of a mask onto a wafer are performed such that the exposure field of the second exposure partially overlaps the exposure field of the first exposure. A characteristic of a set of features is determined, and a value of a parameter of an optical proximity correction model is determined. An alignment feature can be used to align a measurement tool. In yet another embodiment, pupil intensity distribution of an imaging system is measured by exposing an image field of a radiation detector with a bright feature, positioning the detector at a distance away from the image plane, and exposing the image field of the detector with a bright feature, resulting in a cumulative exposure of the image field of the detector from the two exposures. A characteristic of a spatial pattern in the cumulative exposure of the image field of the detector is then determined.

    Method and system for designing manufacturable patterns that account for the pattern- and position-dependent nature of patterning processes
    79.
    发明申请
    Method and system for designing manufacturable patterns that account for the pattern- and position-dependent nature of patterning processes 有权
    用于设计可制造图案的方法和系统,其描述了图案化工艺的图案和位置依赖性质

    公开(公告)号:US20050273753A1

    公开(公告)日:2005-12-08

    申请号:US10861170

    申请日:2004-06-04

    IPC分类号: G03F7/20 G06F17/50 G21K5/10

    摘要: Computational models of a patterning process are described. Any one of these computational models can be implemented as computer-readable program code embodied in computer-readable media. The embodiments described herein explain techniques that can be used to adjust parameters of these models according to measurements, as well as how predictions made from these models can be used to correct lithography data. Corrected lithography data can be used to manufacture a device, such as an integrated circuit.

    摘要翻译: 描述了图案化过程的计算模型。 这些计算模型中的任何一个可以被实现为体现在计算机可读介质中的计算机可读程序代码。 这里描述的实施例解释了可以用于根据测量来调整这些模型的参数的技术,以及如何使用这些模型做出的预测来校正光刻数据。 校正的光刻数据可用于制造诸如集成电路的器件。