公开(公告)号：US20130313581A1

公开(公告)日：2013-11-28

申请号：US13601336

申请日：2012-08-31

申请人： Hideto Furuyama ,  Akihiro Kojima ,  Miyoko Shimada ,  Yosuke Akimoto ,  Hideyuki Tomizawa

发明人： Hideto Furuyama ,  Akihiro Kojima ,  Miyoko Shimada ,  Yosuke Akimoto ,  Hideyuki Tomizawa

IPC分类号： H01L33/50 ,  H01L33/08

CPC分类号： H01L33/505

摘要： According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first and second surfaces, and a light emitting layer; a p-side electrode provided on the second surface; an n-side electrode provided on the second surface; a first insulating film covering the p-side and the n-side electrodes; a p-side wiring section electrically connected to the p-side electrode through the first insulating film; an n-side wiring section electrically connected to the n-side electrode through the first insulating film; and a phosphor layer provided on the first surface. The phosphor layer has an upper surface and an oblique surface, the oblique surface forming an obtuse angle with the upper surface and inclined with respect to the first surface. Thickness of the phosphor layer immediately below the oblique surface is smaller than thickness of the phosphor layer immediately below the upper surface.

摘要翻译： 根据一个实施例，半导体发光器件包括：包括第一和第二表面的半导体层和发光层; 设置在第二表面上的p侧电极; 设置在所述第二表面上的n侧电极; 覆盖p侧和n侧电极的第一绝缘膜; 通过第一绝缘膜电连接到p侧电极的p侧布线部分; 通过第一绝缘膜与n侧电极电连接的n侧配线部; 以及设置在第一表面上的荧光体层。 荧光体层具有上表面和倾斜表面，倾斜表面与上表面形成钝角并相对于第一表面倾斜。 斜面正下方的荧光体层的厚度小于上表面正下方的荧光体层的厚度。

公开(公告)号：US20130127075A1

公开(公告)日：2013-05-23

申请号：US13813359

申请日：2011-12-08

申请人： Tatsuya Tsujiuchi ,  Hiromitsu Nagayasu ,  Hiroshi Tanaka ,  Takuya Hirata ,  Keiji Fujikawa ,  Ryuji Yoshiyama ,  Yuichiro Sato ,  Toyoshi Nakagawa ,  Tsuyoshi Oishi ,  Motomichi Ochiai ,  Kei Shioya ,  Shunji Ichikawa ,  Akihiro Kojima

发明人： Tatsuya Tsujiuchi ,  Hiromitsu Nagayasu ,  Hiroshi Tanaka ,  Takuya Hirata ,  Keiji Fujikawa ,  Ryuji Yoshiyama ,  Yuichiro Sato ,  Toyoshi Nakagawa ,  Tsuyoshi Oishi ,  Motomichi Ochiai ,  Kei Shioya ,  Shunji Ichikawa ,  Akihiro Kojima

IPC分类号： B01D53/18

CPC分类号： B01D53/18 ,  B01D3/28 ,  B01D53/1406 ,  B01D53/185 ,  B01D2257/204 ,  B01D2257/406 ,  B01D2257/504 ,  B01F3/04078 ,  B01J19/32 ,  B01J2219/32206 ,  B01J2219/32227 ,  B01J2219/32241 ,  B01J2219/32244 ,  B01J2219/32251 ,  B01J2219/32258 ,  B01J2219/32262 ,  B01J2219/32272 ,  B01J2219/32483 ,  B01J2219/3325

摘要： A gas-liquid contacting plate of the present invention in which a treatment liquid flows from an upper side to a lower side direction of a substrate and a part of gas being in contact with the treatment liquid is absorbed into the treatment liquid, includes a downward protruding saw teeth-shaped portion in which a lower end side of the substrate has pitches at predetermined gaps. Further, a pore group for liquid dispersion having a predetermined gap is provided in a plurality of lines, in the substrate. An arrangement thereof is a zigzag arrangement.

摘要翻译： 本发明的气液接触板，其中处理液体从基板的上侧向下侧流动，并且与处理液接触的一部分气体被吸收到处理液中，包括向下 突出的锯齿形部分，其中衬底的下端侧具有预定间隙的间距。 此外，在基板中以多条线设置具有预定间隙的分散液孔组。 其布置是锯齿形布置。

公开(公告)号：US08252193B2

公开(公告)日：2012-08-28

申请号：US12052522

申请日：2008-03-20

申请人： Akio Ui ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

发明人： Akio Ui ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

IPC分类号： G01R31/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165

摘要： A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.

摘要翻译： 基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及脉冲电压施加装置，用于向RF电极施加脉冲电压以与RF电压叠加，并且包括用于控制施加脉冲电压的定时并且限定脉冲电压的暂停时段的控制器。

公开(公告)号：US07887717B2

公开(公告)日：2011-02-15

申请号：US12397439

申请日：2009-03-04

申请人： Akihiro Kojima ,  Makoto Murakami ,  Fumio Shimano ,  Jeong-Hee Sung

发明人： Akihiro Kojima ,  Makoto Murakami ,  Fumio Shimano ,  Jeong-Hee Sung

IPC分类号： C09K19/00 ,  C09K19/06 ,  C09K19/52 ,  G02F1/03 ,  G02F1/1333

CPC分类号： C09K19/586 ,  C09K19/18 ,  C09K19/2007 ,  C09K19/3003 ,  C09K19/3068 ,  C09K19/42 ,  C09K19/588 ,  C09K2019/0407 ,  Y10T428/10

摘要： The present invention relates to a liquid-crystalline medium having high twist, to the use thereof for electro-optical purposes, and to displays containing this medium.

摘要翻译： 本发明涉及一种具有高扭曲，其电光目的用途的液晶介质，以及含有该介质的显示器。

公开(公告)号：US20080237185A1

公开(公告)日：2008-10-02

申请号：US12052522

申请日：2008-03-20

申请人： Akio UI ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

发明人： Akio UI ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165

摘要： A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.

摘要翻译： 基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及脉冲电压施加装置，用于向RF电极施加脉冲电压以与RF电压叠加，并且包括用于控制施加脉冲电压的定时并且限定脉冲电压的暂停时段的控制器。

公开(公告)号：US20050035943A1

公开(公告)日：2005-02-17

申请号：US10943860

申请日：2004-09-20

申请人： Akihiro Kojima

发明人： Akihiro Kojima

IPC分类号： G02B26/10 ,  G03B21/00 ,  G09G5/00 ,  H01S3/00 ,  H04N5/74 ,  H04N9/31

CPC分类号： H04N9/3129

摘要： Disclosed herein is a projection type image display apparatus comprising projection means for projecting an image on an image-displaying screen by scanning with a laser beam, and detection means for detecting the presence or absence of an intruding object between the projection means and the screen, wherein detection by the detection means is conducted relative to a position preceding the laser beam in the scan direction of the laser beam.

摘要翻译： 这里公开了一种投影型图像显示装置，包括用于通过用激光束扫描在图像显示屏幕上投影图像的投影装置，以及检测装置，用于检测投影装置和屏幕之间是否存在入侵物体， 其中，所述检测装置的检测相对于所述激光束在所述激光束的扫描方向上的位置前进。

公开(公告)号：US06780278B2

公开(公告)日：2004-08-24

申请号：US09892481

申请日：2001-06-28

申请人： Hisataka Hayashi ,  Kazuhiro Tomioka ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Akihiro Kojima

发明人： Hisataka Hayashi ,  Kazuhiro Tomioka ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Akihiro Kojima

IPC分类号： H01L2100

CPC分类号： H01J37/32082 ,  H01J37/32532

摘要： A plasma processing apparatus comprises a grounded housing, a thin RF plate electrode, an opposite electrode facing the RF plate electrode, and a RF power source for applying a radio frequency to either the RF plate electrode or the opposite electrode to produce plasma between the two electrodes. If the radio frequency applied to the electrode is f (MHz), the parasitic capacity C (pF) between the grounded portion of the housing and a conductive portion through which the radio frequency propagates is less than 1210*f−0.9. The thickness of the RF plate electrode is 1 mm to 6 mm, and it is supported by a heat sink. The heat sink has a coolant passage in the proximity to the RF plate electrode. The heat sink also has a groove or a cavity in addition to the coolant passage, thereby reducing the value of the dielectric constant of the heat sink as a whole.

摘要翻译： 等离子体处理装置包括接地壳体，薄RF板电极，面对RF板电极的相对电极和用于将射频施加到RF板电极或相对电极的RF电源，以在两者之间产生等离子体 电极。 如果施加到电极的射频为f（MHz），则壳体的接地部分与射频传播的导电部分之间的寄生电容C（pF）小于1210×f <-0.9>。 RF板电极的厚度为1mm〜6mm，由散热片支撑。 散热器在RF板电极附近具有冷却剂通道。 除了冷却剂通道之外，散热器还具有凹槽或空腔，从而整体上降低了散热器的介电常数值。

公开(公告)号：US5368062A

公开(公告)日：1994-11-29

申请号：US010325

申请日：1993-01-28

申请人： Katsuya Okumura ,  Yoshihisa Sudo ,  Kenichi Goshima ,  Hiroshi Itafuji ,  Akihiro Kojima

发明人： Katsuya Okumura ,  Yoshihisa Sudo ,  Kenichi Goshima ,  Hiroshi Itafuji ,  Akihiro Kojima

IPC分类号： C23C16/44 ,  C23C16/455 ,  F17C5/06 ,  F16K11/20

CPC分类号： C23C16/45512 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/455 ,  C23C16/45561 ,  F17C5/06 ,  F17C2205/0323 ,  F17C2205/0382 ,  F17C2227/044 ,  F17C2250/0636 ,  F17C2260/042 ,  F17C2270/0518 ,  Y10T137/4259 ,  Y10T137/86445 ,  Y10T137/87249

摘要： A gas supplying system for supplying a corrosive gas or the like to a semiconductor manufacturing apparatus or the like. A plurality of kinds of component gases are introduced into a chamber and mixed therein to form a desired supply gas. After supplying the desired supply gas, the chamber is evacuated and an inert gas is charged into the chamber to substitute a residual supply gas remaining in the chamber by the inert gas. The evacuation of the chamber and the charging of the inert gas into the chamber are repeated two or more times. Accordingly, the residual supply gas can be efficiently removed from the chamber and substituted by the inert gas.

摘要翻译： 用于向半导体制造装置等供给腐蚀性气体等的气体供给系统。 将多种组分气体引入室中并混合在其中以形成所需的供给气体。 在供应期望的供应气体之后，将室抽真空，并将惰性气体装入室中以用惰性气体代替残留在室中的残留供应气体。 将室抽真空并将惰性气体充入室中重复两次或更多次。 因此，能够从室中有效地除去残留的供给气体，并被惰性气体取代。

公开(公告)号：US09084961B2

公开(公告)日：2015-07-21

申请号：US13813359

申请日：2011-12-08

申请人： Tatsuya Tsujiuchi ,  Hiromitsu Nagayasu ,  Hiroshi Tanaka ,  Takuya Hirata ,  Keiji Fujikawa ,  Ryuji Yoshiyama ,  Yuichiro Sato ,  Toyoshi Nakagawa ,  Tsuyoshi Oishi ,  Motomichi Ochiai ,  Kei Shioya ,  Shunji Ichikawa ,  Akihiro Kojima

发明人： Tatsuya Tsujiuchi ,  Hiromitsu Nagayasu ,  Hiroshi Tanaka ,  Takuya Hirata ,  Keiji Fujikawa ,  Ryuji Yoshiyama ,  Yuichiro Sato ,  Toyoshi Nakagawa ,  Tsuyoshi Oishi ,  Motomichi Ochiai ,  Kei Shioya ,  Shunji Ichikawa ,  Akihiro Kojima

IPC分类号： B01D53/18 ,  B01F3/04 ,  B01D53/14 ,  B01J19/32 ,  B01D3/28

CPC分类号： B01D53/18 ,  B01D3/28 ,  B01D53/1406 ,  B01D53/185 ,  B01D2257/204 ,  B01D2257/406 ,  B01D2257/504 ,  B01F3/04078 ,  B01J19/32 ,  B01J2219/32206 ,  B01J2219/32227 ,  B01J2219/32241 ,  B01J2219/32244 ,  B01J2219/32251 ,  B01J2219/32258 ,  B01J2219/32262 ,  B01J2219/32272 ,  B01J2219/32483 ,  B01J2219/3325

摘要： A gas-liquid contacting plate of the present invention in which a treatment liquid flows from an upper side to a lower side direction of a substrate and a part of gas being in contact with the treatment liquid is absorbed into the treatment liquid, includes a downward protruding saw teeth-shaped portion in which a lower end side of the substrate has pitches at predetermined gaps. Further, a pore group for liquid dispersion having a predetermined gap is provided in a plurality of lines, in the substrate. An arrangement thereof is a zigzag arrangement.

摘要翻译： 本发明的气液接触板，其中处理液体从基板的上侧向下侧流动，并且与处理液接触的一部分气体被吸收到处理液中，包括向下 突出的锯齿形部分，其中衬底的下端侧具有预定间隙的间距。 此外，在基板中以多条线设置具有预定间隙的分散液孔组。 其布置是锯齿形布置。

公开(公告)号：US08545670B2

公开(公告)日：2013-10-01

申请号：US12209617

申请日：2008-09-12

申请人： Akihiro Kojima ,  Hisataka Hayashi ,  Akio Ui

发明人： Akihiro Kojima ,  Hisataka Hayashi ,  Akio Ui

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32165

摘要： A plasma processing apparatus for processing a substrate using plasma includes a first electrode configured to mount the substrate, a second electrode disposed to face the first electrode with a predetermined space, a chamber containing the first electrode and the second electrode, the chamber being capable of adjusting an inside atmosphere, a first electric power source device configured to apply a first RF voltage for controlling a self-bias voltage generated on the substrate to the first electrode, the first electric power source device applying a substantially constant width and a substantially constant value in a peak-to-peak voltage of an RF voltage of a first frequency at intervals, and a second electric power source device configured to apply a second RF voltage of a second frequency for generating plasma between the first and second electrodes to one of the first electrode and the second electrode.

摘要翻译： 使用等离子体处理衬底的等离子体处理装置包括：被配置为安装衬底的第一电极，以预定空间设置为面对第一电极的第二电极，容纳第一电极和第二电极的腔室， 调整内部气氛的第一电源装置，被配置为向第一电极施加用于控制在基板上产生的自偏压的第一RF电压的第一电源装置，施加基本上恒定的宽度和基本恒定的值的第一电力源装置 在间隔的第一频率的RF电压的峰峰值电压中，以及第二电源装置，被配置为将第二频率的第二RF电压施加到第一和第二电极之间的等离子体之一 第一电极和第二电极。