Optical transceiver for transmitting light source control information and optical network using the same
    71.
    发明申请
    Optical transceiver for transmitting light source control information and optical network using the same 失效
    用于传输光源控制信息和光网络的光收发器

    公开(公告)号:US20060120727A1

    公开(公告)日:2006-06-08

    申请号:US11126591

    申请日:2005-05-10

    Abstract: An optical transceiver for transmitting light source control information, which is applied to a Subcarrier Multiplexing optical network, is disclosed. The optical transceiver includes a controller, an SCM frame generation/restoring unit, a modulator/demodulator, and an EO/OE converter. The controller controls transmission of light source control information or collects received light source control information. The SCM frame generation/restoring unit generates an SCM frame containing light source control information received from the controller. The modulator/demodulator modulates an SCM frame generated by the SCM frame generation/restoring unit into a signal suitable for transmission. The EO/OE converter converts a transmission signal modulated by the modulator/demodulator into an optical signal and transmits the optical signal through an optical fiber. An optical network having a telephone office OLT and subscriber ONTs, each having the optical transceiver, is also disclosed.

    Abstract translation: 公开了一种用于发送应用于子载波复用光网络的光源控制信息的光收发器。 光收发器包括控制器,SCM帧生成/恢复单元,调制器/解调器和EO / OE转换器。 控制器控制光源控制信息的传输或收集所接收的光源控制信息。 SCM帧生成/恢复单元生成包含从控制器接收的光源控制信息的SCM帧。 调制器/解调器将由SCM帧生成/恢复单元生成的SCM帧调制成适合于传输的信号。 EO / OE转换器将由调制器/解调器调制的传输信号转换为光信号,并通过光纤传输光信号。 还公开了具有电话局OLT和用户ONT的光网络,每个具有光收发器。

    Method of manufacturing a fin field effect transistor
    73.
    发明申请
    Method of manufacturing a fin field effect transistor 有权
    制造鳍式场效应晶体管的方法

    公开(公告)号:US20050186746A1

    公开(公告)日:2005-08-25

    申请号:US11066703

    申请日:2005-02-23

    Abstract: In an exemplary embodiment, a fin active region is protruded along one direction from a bulk silicon substrate on which a shallow trench insulator is entirely formed so as to cover the fin active region. The shallow trench insulator is removed to selectively expose an upper part and sidewall of the fin active region, along a line shape that at least one time crosses with the fin active region, thus forming a trench. The fin active region is exposed by the trench and thereon a gate insulation layer is formed. Thereby, productivity is increased and performance of the device is improved. A fin FET employs a bulk silicon substrate of which a manufacturing cost is lower than that of a conventional SOI type silicon substrate. Also, a floating body effect can be prevented, or is substantially reduced.

    Abstract translation: 在一个示例性实施例中,翅片有源区域沿着整体形成浅沟槽绝缘体的体硅基板沿着一个方向突出,以覆盖翅片有源区域。 去除浅沟槽绝缘体,以沿着至少一次与翅片有源区交叉的线形状选择性地暴露翅片有源区的上部和侧壁,从而形成沟槽。 翅片有源区域被沟槽暴露,并且形成有栅极绝缘层。 从而,提高了生产效率并提高了设备​​的性能。 翅片FET采用其制造成本低于常规SOI型硅衬底的制造成本的体硅衬底。 此外,可以防止浮体效应或大大降低浮体效应。

    Semiconductor device gate structure and method of forming the same
    74.
    发明申请
    Semiconductor device gate structure and method of forming the same 审中-公开
    半导体器件栅极结构及其形成方法

    公开(公告)号:US20050184348A1

    公开(公告)日:2005-08-25

    申请号:US11059145

    申请日:2005-02-15

    Abstract: A MOS transistor includes a gate structure extending forrom a semiconductor substrate in a vertical direction is disclosed. The gate structure includes a gate electrode extending from the substrate in a vertical direction, and a gate insulation layer enclosing the gate electrode. A channel pattern encloses the gate insulation layer, and a first conductive pattern extends from a lower portion of the channel pattern in a first direction verticalperpendicular to the channel pattern and in parallel with the substrate. A second conductive pattern extends from an upper portion of the channel pattern in a second direction verticalperpendicular to the channel pattern and in parallel with the substrate. Accordingly, the channel length of the MOS transistor is determined by a distance between the first and second conductive patterns, and a channel width of the MOS transistor is determined by a diameter of the gate structure. Short channel and narrow width effects are sufficiently prevented in a MOS transistor.

    Abstract translation: 公开了一种MOS晶体管,其包括在垂直方向上延伸半导体衬底的栅极结构。 栅极结构包括从垂直方向从衬底延伸的栅极电极和围绕栅电极的栅极绝缘层。 沟道图案包围栅极绝缘层,并且第一导电图案沿着垂直于沟道图案的第一方向并且与衬底平行地从沟道图案的下部延伸。 第二导电图案沿着垂直于沟道图案的第二方向并与衬底平行地从沟道图案的上部延伸。 因此,MOS晶体管的沟道长度由第一和第二导电图案之间的距离决定,并且MOS晶体管的沟道宽度由栅极结构的直径决定。 在MOS晶体管中充分防止了短沟道和窄宽度效应。

    Device and method for receiving and transmitting digital multimedia broadcasting
    76.
    发明申请
    Device and method for receiving and transmitting digital multimedia broadcasting 审中-公开
    用于接收和发送数字多媒体广播的设备和方法

    公开(公告)号:US20050002418A1

    公开(公告)日:2005-01-06

    申请号:US10868636

    申请日:2004-06-14

    Applicant: Yoon Yang Chul Lee

    Inventor: Yoon Yang Chul Lee

    CPC classification number: H04N21/4345 H04N21/234318 H04N21/2362

    Abstract: A device and method for receiving and transmitting digital multimedia broadcasting is disclosed. The transmitting device includes an MPEG4 system including at least one of an ES_Descriptor of an audio object and an ES_Descriptor of a visual object at a set position of an Initial Object Descriptor (IOD) syntax, and encoding data indicated by the IOD using MPEG4 compression algorithms, and an MPEG2 system including the IOD in a Program Specific Information (PSI) table, and encoding the PSI table and data received from the MPEG4 system into an MPEG2 mode and transmitting the encoded data.

    Abstract translation: 公开了一种用于接收和发送数字多媒体广播的设备和方法。 发送装置包括MPEG4系统,其包括音频对象的ES_Descriptor和初始对象描述符(IOD)语法的设置位置处的可视对象的ES_Descriptor中的至少一个,并且使用MPEG4压缩算法对由IOD指示的数据进行编码 ,以及包括节目特定信息(PSI)表中的IOD的MPEG2系统,以及将从MPEG4系统接收的PSI表和数据编码为MPEG2模式并发送编码数据。

    Data management method for nonvolatile memory
    78.
    发明授权
    Data management method for nonvolatile memory 有权
    非易失性存储器的数据管理方法

    公开(公告)号:US09152560B2

    公开(公告)日:2015-10-06

    申请号:US13556243

    申请日:2012-07-24

    CPC classification number: G06F12/0292 G06F12/10 G06F2212/205

    Abstract: A method of managing data in a system including a nonvolatile memory includes storing a root object of application data, and at least one sub object referenced by the root object in the nonvolatile memory, and mapping virtual addresses of the root object and sub object to physical addresses of the nonvolatile memory respectively, in a page unit. The root object stored in the nonvolatile memory includes a pointer that references the sub object stored in the nonvolatile memory.

    Abstract translation: 一种在包括非易失性存储器的系统中管理数据的方法包括将应用数据的根对象以及由根对象引用的至少一个子对象存储在非易失性存储器中,并将根对象和子对象的虚拟地址映射到物理 分别在页面单元中的非易失性存储器的地址。 存储在非易失性存储器中的根对象包括引用存储在非易失性存储器中的子对象的指针。

    Electrical door-locking device
    80.
    发明授权
    Electrical door-locking device 有权
    电动门锁装置

    公开(公告)号:US08661733B2

    公开(公告)日:2014-03-04

    申请号:US13262549

    申请日:2010-04-01

    Applicant: Chul Lee

    Inventor: Chul Lee

    Abstract: An electrical door-locking device includes screws which are rotatable in a forwards and backwards direction, and are placed in line on one side of a door frame in the direction in which the electrical door main body slides; locking hooks located adjacent to the screws; and a sliding unit equipped with a rotatably-provided locking lever having a latch for latching onto the locking hooks when the electrical door main body is closed and is equipped with a locking-lever-pressing part for pressing the locking lever such that the latch of the locking lever unlatches from the locking hooks, and one end of which is rotatably linked to the screws and the other end of which is linked to the electrical door main body.

    Abstract translation: 电气门锁装置包括可沿前后方向旋转的螺钉,并且沿着电门主体滑动的方向在门框的一侧成直线放置; 位于螺钉附近的锁定钩; 以及滑动单元,其具有可旋转地设置的锁定杆,当电门主体关闭时具有用于闩锁到锁定钩上的闩锁,并且配备有用于按压锁定杆的锁定杆按压部件, 锁定杆从锁定钩解锁,其一端可旋转地连接到螺钉,另一端连接到电动门主体。

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