公开(公告)号：US20050136682A1

公开(公告)日：2005-06-23

申请号：US11055878

申请日：2005-02-11

申请人： Eric Hudson ,  James Tietz

发明人： Eric Hudson ,  James Tietz

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/461

CPC分类号： H01L21/31116 ,  H01L21/30655

摘要： A method for etching a layer over a substrate is provided. A gas-modulated cyclic process is performed for more than three cycles. Each cycle comprises performing a protective layer forming phase using first gas chemistry with a deposition gas chemistry, which is performed in about 0.0055 to 7 seconds for each cycle and performing an etching phase for the feature through the etch mask using a second gas chemistry using a reactive etching gas chemistry, which is performed in about 0.005 to 14 seconds for each cycle. The protective layer forming phase comprises providing the deposition gas and forming a plasma from the deposition gas. Each etching phase comprises providing a reactive etching gas and forming a plasma from the reactive etching gas.

公开(公告)号：US06908846B2

公开(公告)日：2005-06-21

申请号：US10401114

申请日：2003-03-27

申请人： Brian K. McMillin ,  Eric Hudson ,  Jeffrey Marks

发明人： Brian K. McMillin ,  Eric Hudson ,  Jeffrey Marks

IPC分类号： H01L21/311 ,  H01L21/66 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/302 ,  H01L23/48

CPC分类号： H01L21/76829 ,  H01J37/32963 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76801 ,  H01L21/76807 ,  H01L22/26

摘要： A method for controlling a plasma etch process while etching a layer stack having a first layer disposed above an end-point generating layer is disclosed. The method includes etching through the first layer and at least partially through the end-point generating layer while monitoring an absorption rate of a light beam traversing an interior portion of the plasma processing chamber, wherein the end-point generating layer is selected from a material that produces a detectable change in the absorption rate when etched. The end-point generating layer is characterized by at least one of a first characteristic and a second characteristic. The first characteristic is an insufficient thickness to function as an etch stop layer, and the second characteristic is an insufficient selectivity to etchants employed to etch through the first layer to function as the etch stop layer. The method additionally includes generating an end-point signal upon detecting the detectable change.

摘要翻译： 公开了一种用于在蚀刻具有设置在端点产生层上方的第一层的层堆叠的同时控制等离子体蚀刻工艺的方法。 该方法包括：在监测穿过等离子体处理室的内部部分的光束的吸收率的同时，蚀刻穿过第一层并且至少部分地穿过端点产生层，其中端点产生层选自材料 其在蚀刻时产生可检测的吸收速率变化。 端点产生层的特征在于第一特征和第二特性中的至少一个。 第一特征是不足以用作蚀刻停止层的厚度，并且第二特性对于用于蚀刻通过第一层以用作蚀刻停止层的蚀刻剂的选择性不足。 该方法还包括在检测到可检测变化时产生端点信号。

公开(公告)号：US09887069B2

公开(公告)日：2018-02-06

申请号：US12634959

申请日：2009-12-10

申请人： Andreas Fischer ,  Eric Hudson

发明人： Andreas Fischer ,  Eric Hudson

IPC分类号： H01J37/32

CPC分类号： H01J37/32623 ,  H01J37/32091

摘要： A plasma processing system for processing at least a substrate with plasma. The plasma processing chamber is capable of controlling ion energy distribution. The plasma processing system may include a first electrode. The plasma processing system also includes a second electrode that is different from the first electrode and is configured for bearing the substrate. The plasma processing system may also include a signal source coupled with the first electrode. The signal source may provide a non-sinusoidal signal through the first electrode to control ion energy distribution at the substrate when the substrate is processed in the plasma processing system, wherein the non-sinusoidal signal is periodic.

公开(公告)号：US20170273287A1

公开(公告)日：2017-09-28

申请号：US15499273

申请日：2017-04-27

申请人： Eric Hudson

发明人： Eric Hudson ,  Van Lee

IPC分类号： A01K85/18

CPC分类号： A01K85/18 ,  A01K85/00 ,  A01K91/06

摘要： A device for use during fishing configured to be connected to the user's fishing line to attract fish. The device is shaped to be moved through the water and generally include a head and a tail. A channel extends through at least a portion of the device and is sized to receive the fishing line. The device is constructed from multiple sections. The sections are selectively positionable between a closed configuration with the sections connected together to connect the device to the fishing line, and an open configuration with the sections being separated to remove the device from the fishing line.

公开(公告)号：US09263240B2

公开(公告)日：2016-02-16

申请号：US13420949

申请日：2012-03-15

申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ryan Bise ,  Lumin Li ,  Sang Ki Nam ,  Jim Rogers ,  Eric Hudson ,  Gerardo Delgadino ,  Andrew D. Bailey, III ,  Mike Kellogg ,  Anthony de la Llera

发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ryan Bise ,  Lumin Li ,  Sang Ki Nam ,  Jim Rogers ,  Eric Hudson ,  Gerardo Delgadino ,  Andrew D. Bailey, III ,  Mike Kellogg ,  Anthony de la Llera

IPC分类号： H01J37/32 ,  H01L21/67

CPC分类号： H01J37/32642 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32724 ,  H01L21/67109

摘要： A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.

摘要翻译： 等离子体处理的系统和方法包括等离子体室，其包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心温度控制区域和耦合到等离子体室的控制器。

公开(公告)号：US08956461B2

公开(公告)日：2015-02-17

申请号：US12970908

申请日：2010-12-16

申请人： Eric Hudson ,  Andreas Fischer

发明人： Eric Hudson ,  Andreas Fischer

IPC分类号： B08B6/00 ,  H01J37/32 ,  B08B7/00

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32596

摘要： An apparatus used for rapid removal of polymer films from plasma confinement rings while minimizing erosion of other plasma etch chamber components is disclosed. The apparatus includes a center assembly, an electrode plate, a confinement ring stack, a first plasma source, and a second plasma source. The electrode plate is affixed to a surface of the center assembly with a channel defined along the external circumference therein. A first plasma source is disposed within the channel and along the external circumference of the center assembly, wherein the first plasma source is configured to direct a plasma to the inner circumferential surface of the confinement ring stack. A second plasma source located away from the first plasma source is configured to perform processing operations on a substrate within the etch chamber.

摘要翻译： 公开了一种用于从等离子体限制环快速除去聚合物膜同时最小化其它等离子体蚀刻室部件的侵蚀的装置。 该装置包括中心组件，电极板，约束环叠层，第一等离子体源和第二等离子体源。 电极板被固定到中心组件的表面，其中沿着外圆周限定了通道。 第一等离子体源设置在通道内并且沿着中心组件的外圆周，其中第一等离子体源被配置为将等离子体引导到限制环堆叠的内圆周表面。 位于远离第一等离子体源的第二等离子体源被配置为在蚀刻室内的衬底上执行处理操作。

公开(公告)号：US08932429B2

公开(公告)日：2015-01-13

申请号：US13594768

申请日：2012-08-24

申请人： Zhigang Chen ,  Eric Hudson

发明人： Zhigang Chen ,  Eric Hudson

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/70 ,  H01J37/32091 ,  H01J37/32183

摘要： System and methods for plasma processing of a wafer include a chamber with an electrode having a support surface and an outer edge region defined thereon. A radio frequency power is communicated to the electrode via a conductive delivery connection and returned through a conductive return connection. A capacitance is applied to a first end that causes appropriate capacitive adjustment and opposite impedance adjustment at a second end of the conductive delivery connection that is coupled to a dielectric surround structure that surrounds the electrode. The dielectric surround structure presents the opposite impedance adjustment near an outer edge of the electrode, such that increasing the capacitance at the first end causes a corresponding increase of impedance at the second end and a corresponding increase in voltage distribution near the outer edge region of the electrode that decreases toward a center of the support surface of the electrode.

摘要翻译： 用于等离子体处理晶片的系统和方法包括具有电极的室，其具有支撑表面和限定在其上的外边缘区域。 射频功率通过导电输送连接传送到电极，并通过导电返回连接返回。 电容被施加到第一端，其导致适当的电容调整，并且在导电输送连接的第二端处相反阻抗调节，该第二端耦合到围绕电极的电介质环绕结构。 电介质环绕结构在电极的外边缘附近呈现相反的阻抗调节，使得增加第一端处的电容导致在第二端处的阻抗相应增加，并且在外部边缘区域附近的电压分布相应增加 电极朝向电极的支撑表面的中心减小。

公开(公告)号：US08518209B2

公开(公告)日：2013-08-27

申请号：US12504833

申请日：2009-07-17

申请人： Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

发明人： Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

IPC分类号： H01L21/3065 ,  C23C16/52 ,  C23C16/50 ,  H05H1/24 ,  H05H1/00 ,  B08B9/00

CPC分类号： H01J37/32963 ,  H01J37/32935

摘要： An apparatus for determining an endpoint of a process by measuring a thickness of a layer is provided. The layer is disposed on the surface by a prior process. The apparatus includes means for providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The apparatus also includes means for exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and means for determining the thickness as a function of time. The apparatus further includes means for ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.

摘要翻译： 提供了一种通过测量层的厚度来确定工艺的端点的装置。 该层通过先前的工艺设置在表面上。 该装置包括用于提供与表面共面的传感器的装置，其中传感器被配置成测量厚度。 该装置还包括用于将等离子体室暴露于等离子体的装置，其中通过曝光改变厚度，以及用于确定作为时间的函数的厚度的装置。 该装置还包括用于确定厚度中的稳态条件的装置，稳态条件的特征在于厚度的基本上稳定的测量，表示端点的稳态条件的开始。

公开(公告)号：US20130126475A1

公开(公告)日：2013-05-23

申请号：US13301725

申请日：2011-11-21

申请人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

发明人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

IPC分类号： C23F1/00 ,  H05H1/24 ,  C23F1/08

CPC分类号： H01J37/32091 ,  H01J37/32165

摘要： Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.

摘要翻译： 提供了半导体制造方法，系统和计算机程序。 一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二RF电源; 第三射频电源; 第四RF电源; 和开关。 第一，第二和第三电源耦合到底部电极。 此外，开关可操作为处于第一位置或第二位置之一，其中第一位置使顶部电极连接到地，而第二位置使顶部电极连接到第四RF电源 。

公开(公告)号：US08222157B2

公开(公告)日：2012-07-17

申请号：US12945314

申请日：2010-11-12

申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andreas Fischer

发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andreas Fischer

IPC分类号： H01L21/461

CPC分类号： H01J37/321 ,  H01J37/32091 ,  H01J2237/03

摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.

摘要翻译： 用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。 该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。 该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。 每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。 线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。