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公开(公告)号：US09263240B2
公开(公告)日：2016-02-16
申请号：US13420949
申请日：2012-03-15
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Ryan Bise , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony de la Llera
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Ryan Bise , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony de la Llera
CPC分类号： H01J37/32642 , H01J37/3244 , H01J37/32541 , H01J37/32724 , H01L21/67109
摘要： A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.
摘要翻译： 等离子体处理的系统和方法包括等离子体室，其包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心温度控制区域和耦合到等离子体室的控制器。
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公开(公告)号：US20130126476A1
公开(公告)日：2013-05-23
申请号：US13420949
申请日：2012-03-15
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Ryan Bise , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony de la LIera
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Ryan Bise , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony de la LIera
CPC分类号： H01J37/32642 , H01J37/3244 , H01J37/32541 , H01J37/32724 , H01L21/67109
摘要： A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.
摘要翻译： 等离子体处理的系统和方法包括等离子体室，其包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心温度控制区域和耦合到等离子体室的控制器。
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公开(公告)号：US20130126486A1
公开(公告)日：2013-05-23
申请号：US13438473
申请日：2012-04-03
申请人： Ryan Bise , Rajinder Dhindsa , Alexei Marakhtanov , Lumin Li , Sang Ki Naw , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony Dela Llera , Darrell Ehrlich
发明人： Ryan Bise , Rajinder Dhindsa , Alexei Marakhtanov , Lumin Li , Sang Ki Naw , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony Dela Llera , Darrell Ehrlich
IPC分类号： B23K9/00
CPC分类号： H01J37/32642 , H01J37/3244 , H01J37/32541 , H01J37/32724 , H01L21/67109
摘要： A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones.
摘要翻译： 等离子体处理的系统和方法包括等离子体处理系统，其包括等离子体室和耦合到等离子体室的控制器。 等离子体室包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心气体注入区域。
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4.发明申请公开(公告)号：US20070012659A1
公开(公告)日：2007-01-18
申请号：US11525602
申请日：2006-09-21
申请人： Camelia Rusu , Rajinder Dhindsa , Eric Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
发明人： Camelia Rusu , Rajinder Dhindsa , Eric Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
IPC分类号： C03C25/68 , C23F1/00 , H01L21/306 , B44C1/22
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/31116 , H01L21/67063 , H01L21/67069
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.
摘要翻译： 提供了一种通过掩模将高宽比特征蚀刻到衬底上待蚀刻的层中的方法。 基板被放置在处理室中，该处理室能够提供第一频率的RF功率，不同于第一频率的第二频率和与第一和第二频率不同的第三频率。 向处理室提供蚀刻剂气体。 提供了第一蚀刻步骤，其中第一频率，第二频率和第三频率处于第一蚀刻步骤的功率设置。 提供了第二蚀刻步骤，其中第一频率，第二频率和第三频率处于不同的功率设置。
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公开(公告)号：US20110024046A1
公开(公告)日：2011-02-03
申请号：US12905046
申请日：2010-10-14
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： H01L21/306
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The lower electrode is also defined to support a semiconductor wafer in exposure to the plasma. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is defined by a doped semiconductor material. A doping concentration within the upper electrode varies radially from a center to a periphery of the upper electrode. The electric potential of the upper electrode influences an electric potential of the plasma within the chamber.
摘要翻译： 提供了一种用于半导体晶片等离子体处理的装置。 该装置包括具有下电极和设置在其中的上电极的腔室。 下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。 下电极也被限定为支持暴露于等离子体的半导体晶片。 上电极设置在下电极的上方并与之隔开的关系。 上电极由掺杂的半导体材料限定。 上电极内的掺杂浓度从上电极的中心向周边径向变化。 上电极的电位影响室内等离子体的电位。
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公开(公告)号：US20060118518A1
公开(公告)日：2006-06-08
申请号：US10737022
申请日：2003-12-15
申请人： Camelia Rusu , Rajinder Dhindsa , Eric Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
发明人： Camelia Rusu , Rajinder Dhindsa , Eric Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
IPC分类号： B44C1/22 , H01L21/306
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/31116 , H01L21/67063 , H01L21/67069
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.
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公开(公告)号：US20080006205A1
公开(公告)日：2008-01-10
申请号：US11456545
申请日：2006-07-10
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.
摘要翻译： 提供了一种用于半导体晶片等离子体处理的装置。 该装置包括具有下电极和设置在其中的上电极的腔室。 下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。 上电极设置在下电极的上方，并与腔电隔离。 电压源连接到上电极。 电压源被定义为控制上电极相对于腔室的电位。 由电压源控制的上电极的电位能够影响在下电极和上电极之间产生的等离子体的电位。
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公开(公告)号：US09111724B2
公开(公告)日：2015-08-18
申请号：US12905041
申请日：2010-10-14
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： H01J7/24 , C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.
摘要翻译： 腔室包括下电极和上电极。 下电极被限定为透射射频电流通过腔室并且支撑半导体晶片暴露于腔室内的等离子体。 上电极设置在下电极的上方并与之隔开的关系。 上部电极与腔室电气隔离，并且由中心部分和一个或多个同心地设置在中心部分外部的环形部分限定。 上部电极的相邻部分通过电介质材料彼此电分离。 多个电压源分别连接到上电极部分。 每个电压源被定义为相对于腔室控制与其连接的上电极部分的电位。 每个上电极部分的电位影响室内的等离子体的电位。
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公开(公告)号：US20110024045A1
公开(公告)日：2011-02-03
申请号：US12905041
申请日：2010-10-14
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： H01L21/306
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.
摘要翻译： 腔室包括下电极和上电极。 下电极被限定为透射射频电流通过腔室并且支撑半导体晶片暴露于腔室内的等离子体。 上电极设置在下电极的上方并与之隔开的关系。 上部电极与腔室电气隔离，并且由中心部分和一个或多个同心地设置在中心部分外部的环形部分限定。 上部电极的相邻部分通过电介质材料彼此电分离。 多个电压源分别连接到上电极部分。 每个电压源被定义为相对于腔室控制与其连接的上电极部分的电位。 每个上电极部分的电位影响室内的等离子体的电位。
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公开(公告)号：US20050006028A1
公开(公告)日：2005-01-13
申请号：US10600191
申请日：2003-06-20
申请人： Douglas Keil , Lumin Li , Eric Hudson , Reza Sadjadi , Eric Lenz , Rajinder Dhindsa , Ji Kim
发明人： Douglas Keil , Lumin Li , Eric Hudson , Reza Sadjadi , Eric Lenz , Rajinder Dhindsa , Ji Kim
CPC分类号： H01J37/3266 , H01J37/32431 , H01J37/32623
摘要： A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.
摘要翻译： 提供了一种用于处理衬底的等离子体处理装置。 提供具有室壁的等离子体处理室。 在室壁内提供衬底支撑件。 提供至少一个限制环，其中限制环和衬底支撑件限定等离子体体积。 提供了一种用于产生用于磁力增强由至少一个限制环提供的物理限制的磁场的磁源。
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