公开(公告)号：US08017516B2

公开(公告)日：2011-09-13

申请号：US11732608

申请日：2007-04-03

申请人： Andrew D. Bailey, III ,  Shrikant P. Lohokare

发明人： Andrew D. Bailey, III ,  Shrikant P. Lohokare

IPC分类号： H01L21/4763

CPC分类号： H01L21/67051 ,  H01J37/32522 ,  H01J2237/022 ,  H01L21/31116 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/6708 ,  H01L21/76819 ,  H01L21/7684

摘要： A system and method for forming a planar dielectric layer includes identifying a non-planarity in the dielectric layer, forming one or more additional dielectric layers over the dielectric layer and planarizing at least one of the additional dielectric layers wherein the one or more additional dielectric layers include at least one of a spin-on-glass layer and at least one of a low-k dielectric material layer and wherein each one of the one or more additional dielectric layers having a thickness of less than about 1000 angstroms and wherein the one or more additional dielectric layers has a total thickness of between about 1000 and about 4000 angstroms.

摘要翻译： 用于形成平面电介质层的系统和方法包括识别电介质层中的非平面性，在电介质层上形成一个或多个附加的电介质层，并平坦化至少一个附加电介质层，其中一个或多个附加电介质层 包括旋涂玻璃层和低k介电材料层中的至少一个中的至少一个，并且其中所述一个或多个附加电介质层中的每一个具有小于约1000埃的厚度，并且其中所述一个或多个 更多的附加电介质层的总厚度在约1000和约4000埃之间。

公开(公告)号：US20110097904A1

公开(公告)日：2011-04-28

申请号：US12604224

申请日：2009-10-22

申请人： Stephen M. Sirard ,  Kenji Takeshita ,  Andrew D. Bailey, III

发明人： Stephen M. Sirard ,  Kenji Takeshita ,  Andrew D. Bailey, III

IPC分类号： H01L21/3065

CPC分类号： H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

摘要： A method for repairing damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A repair gas comprising CH4 gas is provided. The repair gas is formed into a plasma, while maintaining a pressure below 50 mTorr. Hydroxyl attached to silicon is replaced with methyl from the plasma formed by the repair gas.

摘要翻译： 提供了用有机化合物修复对基于硅的低k电介质层的损伤的方法，其中损伤用连接到硅上的羟基连接到硅上的甲基替代。 提供了包含CH 4气体的修复气体。 将修复气体形成为等离子体，同时保持低于50mTorr的压力。 与由修复气体形成的等离子体中的被甲基取代的羟基被甲基取代。

公开(公告)号：US07922866B2

公开(公告)日：2011-04-12

申请号：US12647301

申请日：2009-12-24

申请人： Gregory S. Sexton ,  Andrew D. Bailey, III ,  Alan M. Schoepp ,  John D. Boniface

发明人： Gregory S. Sexton ,  Andrew D. Bailey, III ,  Alan M. Schoepp ,  John D. Boniface

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01L21/67069 ,  H01J37/32568

摘要： Positional relationships are established in a process chamber. A base is configured with a lower electrode surface to support a wafer, and an upper electrode has a lower surface. A drive mounted on the base has a linkage connected to the upper electrode. A fixture placed on the lower surface moves into a desired orientation of the lower electrode. With the upper electrode loosely connected by the linkage to the drive, the fixture transfers the desired orientation to the upper electrode. The linkage is tightened to maintain the desired orientation, the fixture is removed and a process exclusion insert is mounted to the upper electrode. The drive moves the upper electrode and the insert to define an inactive process zone between the upper electrode and the wafer on the lower electrode to protect a central area of the wafer during etching of a wafer edge environ around the central area.

摘要翻译： 位置关系建立在一个过程室中。 基底配置有下电极表面以支撑晶片，并且上电极具有下表面。 安装在基座上的驱动器具有连接到上电极的连杆。 放置在下表面上的固定器移动到下电极的期望取向。 通过与驱动器的联动松动地连接上电极，固定装置将期望的方向传送到上电极。 连接件被拧紧以保持所需的取向，夹具被移除，并且将过程排除插入件安装到上电极。 驱动器移动上电极和插入件以在下电极上的上电极和晶片之间限定非活动的工艺区域，以在蚀刻围绕中心区域的晶片边缘环境时保护晶片的中心区域。

公开(公告)号：US07858898B2

公开(公告)日：2010-12-28

申请号：US11698191

申请日：2007-01-26

申请人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  Andras Kuthi ,  Yunsang Kim ,  William S. Kennedy

发明人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  Andras Kuthi ,  Yunsang Kim ,  William S. Kennedy

IPC分类号： B23K10/00

CPC分类号： H01L21/0209 ,  H01J37/32366 ,  H01J37/32568 ,  H01J2237/335 ,  H01L21/67069

摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.

摘要翻译： 一种用于清洁半导体衬底的斜边缘的装置。 该装置包括具有顶表面并适于支撑基底的下电极组件和具有与顶表面相对的底表面的上电极组件。 下部和上部电极组件在操作期间产生用于清洁设置在顶部和底部表面之间的衬底的斜面边缘的等离子体。 该装置还包括用于将上电极组件悬挂在下支撑件上并且调节底表面相对于顶表面的倾斜角度和水平平移的机构。

公开(公告)号：US20100253224A1

公开(公告)日：2010-10-07

申请号：US12621590

申请日：2009-11-19

申请人： Alexei Marakhtanov ,  Eric Hudson ,  Rajhinder Dhindsa ,  Andrew D. Bailey, III

发明人： Alexei Marakhtanov ,  Eric Hudson ,  Rajhinder Dhindsa ,  Andrew D. Bailey, III

IPC分类号： H05B31/26

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32137 ,  H01J37/32146 ,  H01J2237/334 ,  H01J2237/3348

摘要： A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion. The duty cycle is the ratio of a duration of the maximum amplitude portion to the sum of the duration of the maximum amplitude portion and the duration of the minimum amplitude portion. The second periodic portion additionally has a second frequency during the maximum amplitude portion. An amplitude modulation of the second periodic portion is phase locked to the first continuous periodic portion.

摘要翻译： 提供了一种操作处理系统的方法，该处理系统具有布置成接收气体的空间和可操作以在该空间内产生电磁场的电磁场产生部分。 所述方法包括向所述空间提供气体，以及利用驱动电位操作所述电磁场产生部分，以在所述空间内产生电磁场，以将所述气体的至少一部分转化为等离子体。 作为时间的函数的驱动电位基于第一潜在功能部分和第二电位功能部分。 第一潜在功能部分包括具有第一幅度和第一频率的第一连续周期部分。 第二电位功能部分包括具有最大振幅部分和最小振幅部分和占空比的第二周期部分。 最大幅度部分比最小振幅部分的幅度更大。 占空比是最大幅度部分的持续时间与最大振幅部分的持续时间和最小振幅部分的持续时间之和的比率。 第二周期部分在最大振幅部分期间另外具有第二频率。 第二周期部分的幅度调制被锁相到第一连续周期部分。

公开(公告)号：US20100213173A1

公开(公告)日：2010-08-26

申请号：US12774712

申请日：2010-05-05

申请人： Andrew D. Bailey, III ,  Yunsang Kim

发明人： Andrew D. Bailey, III ,  Yunsang Kim

IPC分类号： C23F1/00

CPC分类号： C23G1/24 ,  C23G1/103 ,  C23G5/00 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/321 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/6708

摘要： The various embodiments described in the specification provide improved mechanisms of removal of unwanted deposits on the bevel edge to improve process yield. The embodiments provide apparatus and methods of treating the bevel edge of a copper plated substrate to convert the copper at the bevel edge to a copper compound that can be wet etched with a fluid at a high etch selectivity in comparison to copper. In one embodiment, the wet etch of the copper compound at high selectivity to copper allows the removal of the non-volatile copper at substrate bevel edge in a wet etch processing chamber. The plasma treatment at bevel edge allows the copper at bevel edge to be removed at precise spatial control to about 2 mm or below, such as about 1 mm, about 0.5 mm or about 0.25 mm, to the very edge of substrate. In addition, the apparatus and methods described above for bevel edge copper removal do not have the problems of copper etching fluid being splashed on the device regions to cause defects and thinning of copper films. Therefore, device yield can be greatly improved.

摘要翻译： 在说明书中描述的各种实施例提供了改进的机理，去除斜边上的不需要的沉积物以提高工艺产量。 实施例提供了处理镀铜衬底的斜边缘以将斜面边缘处的铜转化为铜化合物的设备和方法，铜化合物可以与铜相比以高蚀刻选择性用流体进行湿蚀刻。 在一个实施方案中，铜化合物对铜的高选择性的湿法蚀刻允许在湿蚀刻处理室中在衬底斜面边缘处去除非挥发性铜。 在斜边缘处的等离子体处理允许在精确的空间控制下将斜角边缘处的铜去除到衬底的最边缘约2mm或更小，例如约1mm，约0.5mm或约0.25mm。 此外，上述用于斜边铜剥离的装置和方法不存在铜蚀刻流体溅射在器件区域上以引起铜膜缺陷和变薄的问题。 因此，可以大大提高器件产量。

公开(公告)号：US20100108491A1

公开(公告)日：2010-05-06

申请号：US12683995

申请日：2010-01-07

申请人： Hyungsuk Alexander Yoon ,  William Thie ,  Yezdi Dordi ,  Andrew D. Bailey, III

发明人： Hyungsuk Alexander Yoon ,  William Thie ,  Yezdi Dordi ,  Andrew D. Bailey, III

IPC分类号： H05F3/00

CPC分类号： H01L21/31116 ,  H01L21/02063 ,  H01L21/67069 ,  H05H1/24 ,  H05H1/2406 ,  H05H1/48 ,  H05H2001/2418

摘要： A method for generating plasma for removing metal oxide from a substrate is provided. The method includes providing a powered electrode assembly, which includes a powered electrode, a dielectric layer, and a wire mesh disposed between the powered electrode and the dielectric layer. The method also includes providing a grounded electrode assembly disposed opposite the powered electrode assembly to form a cavity wherein the plasma is generated. The wire mesh is shielded from the plasma by the dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the metal oxide. The method further includes introducing at least one inert gas and at least one process gas into the cavity. The method yet also includes applying an rf field to the cavity using the powered electrode to generate the plasma from the inert and the process gas.

摘要翻译： 提供了一种用于从衬底去除金属氧化物的等离子体的方法。 该方法包括提供一种动力电极组件，其包括供电电极，电介质层和布置在电源电极和电介质层之间的金属丝网。 该方法还包括提供与动力电极组件相对设置的接地电极组件，以形成其中产生等离子体的空腔。 当等离子体存在于空腔中时，金属丝网通过电介质层被屏蔽，等离子体在一端具有出口，用于提供等离子体以去除金属氧化物。 该方法还包括将至少一种惰性气体和至少一种工艺气体引入空腔中。 该方法还包括使用动力电极将空穴场施加到空腔，以从惰性气体和处理气体产生等离子体。

公开(公告)号：US07662254B2

公开(公告)日：2010-02-16

申请号：US11704870

申请日：2007-02-08

申请人： Gregory S. Sexton ,  Andrew D. Bailey, III ,  Alan M. Schoepp ,  John D. Boniface

发明人： Gregory S. Sexton ,  Andrew D. Bailey, III ,  Alan M. Schoepp ,  John D. Boniface

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67069 ,  H01J37/32568

摘要： Positional relationships are established in a process chamber. A base is configured with a lower electrode surface to support a wafer, and an upper electrode has a lower surface. A drive mounted on the base has a linkage connected to the upper electrode. A fixture placed on the lower surface moves into a desired orientation of the lower electrode. With the upper electrode loosely connected by the linkage to the drive, the fixture transfers the desired orientation to the upper electrode. The linkage is tightened to maintain the desired orientation, the fixture is removed and a process exclusion insert is mounted to the upper electrode. The drive moves the upper electrode and the insert to define an inactive process zone between the upper electrode and the wafer on the lower electrode to protect a central area of the wafer during etching of a wafer edge environ around the central area.

摘要翻译： 位置关系建立在一个过程室中。 基底配置有下电极表面以支撑晶片，并且上电极具有下表面。 安装在基座上的驱动器具有连接到上电极的连杆。 放置在下表面上的固定器移动到下电极的期望取向。 通过与驱动器的联动松动地连接上电极，固定装置将期望的方向传送到上电极。 连接件被拧紧以保持所需的取向，夹具被移除，并且将过程排除插入件安装到上电极。 驱动器移动上电极和插入件以在下电极上的上电极和晶片之间限定非活动的工艺区域，以在蚀刻围绕中心区域的晶片边缘环境时保护晶片的中心区域。

公开(公告)号：US07662253B2

公开(公告)日：2010-02-16

申请号：US11237457

申请日：2005-09-27

申请人： Hyungsuk Alexander Yoon ,  William Thie ,  Yezdi Dordi ,  Andrew D. Bailey, III

发明人： Hyungsuk Alexander Yoon ,  William Thie ,  Yezdi Dordi ,  Andrew D. Bailey, III

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/31116 ,  H01L21/02063 ,  H01L21/67069 ,  H05H1/24 ,  H05H1/2406 ,  H05H1/48 ,  H05H2001/2418

摘要： An apparatus generating a plasma for removing metal oxide from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the metal oxide.

摘要翻译： 公开了一种从衬底生成用于去除金属氧化物的等离子体的装置。 该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。 该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一金属丝网被第一介电层与等离子体屏蔽， 空腔在一端具有出口，用于提供等离子体以去除金属氧化物。

公开(公告)号：US07651585B2

公开(公告)日：2010-01-26

申请号：US11236170

申请日：2005-09-26

申请人： Hyungsuk Alexander Yoon ,  Yunsang Kim ,  Jason A. Ryder ,  Andrew D. Bailey, III

发明人： Hyungsuk Alexander Yoon ,  Yunsang Kim ,  Jason A. Ryder ,  Andrew D. Bailey, III

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/02087 ,  H01J37/32541 ,  H01J37/3255 ,  H05H1/2406 ,  H05H2001/2412

摘要： An apparatus generating a plasma for removing an edge polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the edge polymer.

摘要翻译： 公开了一种生成用于从基板去除边缘聚合物的等离子体的装置。 该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。 该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一金属丝网被第一介电层与等离子体屏蔽， 空腔在一端具有出口，用于提供等离子体以去除边缘聚合物。