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71.发明申请公开(公告)号：US20060077595A1
公开(公告)日：2006-04-13
申请号：US11248203
申请日：2005-10-13
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Hitoshi Iwasaki
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Hitoshi Iwasaki
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3929 , G11B5/398 , G11B2005/3996
摘要： A spin-valve magnetoresistive effect film includes a magnetization fixed layer, a magnetization free layer, and an intermediate layer interposed therebetween. The intermediate layer has a conduction part disposed in an insulation layer and made of a magnetic metal material. The ferromagnetic film stacked on an upper side of the intermediate layer, out of ferromagnetic films constituting the magnetization fixed layer and the magnetization free layer has a perpendicular orientation part which is disposed above the conduction part and whose crystal growth direction is substantially perpendicular to a film plane, and a non-perpendicular orientation part which exists in a portion other than the perpendicular orientation part. A magnetoresistive effect element has a pair of electrodes passing a sense current in a direction perpendicular to the film plane of the magnetoresistive effect film.
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72.发明申请公开(公告)号：US20050168887A1
公开(公告)日：2005-08-04
申请号：US11017965
申请日：2004-12-22
IPC分类号： G11B5/39 , G11C11/16 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , G11B5/33 , G11B5/127
CPC分类号： H01F10/3272 , B82Y25/00 , G11B5/39 , G11C11/16 , H01F10/3259 , H01F10/3263 , H01F41/325
摘要： A magnetoresistive element includes a magnetoresistive film having a magnetization pinned layer whose magnetization is substantially pinned to one direction, a nonmagnetic intermediate layer, and a magnetization free layer whose magnetization is changed in direction depending on an external magnetic field, in which the magnetization pinned layer or nonmagnetic intermediate layer includes an insulator, and a pair of electrodes electrically connected to the magnetoresistive film so as to supply a sense current in a direction substantially perpendicular to a plane of the magnetoresistive film. The magnetization free layer includes a body-centered cubic layer with a body-centered cubic structure, and the thickness of the body-centered cubic layer is 2 nm or more.
摘要翻译： 磁阻元件包括磁阻膜，其具有磁化被固定在一个方向上的磁化固定层，非磁性中间层和磁化自由层，其磁化方向取决于外部磁场而变化，其中磁化固定层 或非磁性中间层包括绝缘体和电连接到磁阻膜的一对电极，以便在基本垂直于磁阻膜的平面的方向上提供感测电流。 无磁化层包括以体心立方结构的体心立方层，体心立方层的厚度为2nm以上。
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公开(公告)号：US20050094322A1
公开(公告)日：2005-05-05
申请号：US11001174
申请日：2004-12-02
申请人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121
摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.
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74.发明授权公开(公告)号：US08917485B2
公开(公告)日：2014-12-23
申请号：US11546975
申请日：2006-10-13
CPC分类号： G11B5/3903 , B82Y25/00 , G01R33/093 , G11B5/398 , G11B5/455 , G11C11/16 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/08
摘要： A magnetoresistive effect element includes a magnetization fixed layer including a first crystal grain, having a magnetization direction which is fixed substantially in one direction, a spacer layer arranged on the magnetization fixed layer and having an insulating layer and a metal conductor penetrating the insulating layer, and a magnetization free layer including a second crystal grain, arranged on the spacer layer to oppose the metal conductor and having a magnetization direction which changes corresponding to an external magnetic field.
摘要翻译： 磁阻效应元件包括：磁化固定层，包括具有大致沿一个方向固定的磁化方向的第一晶粒;布置在磁化固定层上并具有绝缘层和贯穿绝缘层的金属导体的间隔层; 以及包含第二晶粒的无磁化层，其布置在所述间隔层上以与所述金属导体相对并且具有对应于外部磁场变化的磁化方向。
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75.发明授权Current-perpendicular-to-plane magnetoresistive element in which the magnetization direction of an intermediate metallic magnetic layer is twisted 失效电流 - 垂直于平面的磁阻元件，其中中间金属磁性层的磁化方向被扭曲公开(公告)号：US08213129B2
公开(公告)日：2012-07-03
申请号：US11215971
申请日：2005-09-01
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
IPC分类号： G11B5/33
CPC分类号： G11B5/3903
摘要： A magnetoresistive element includes at least three metallic magnetic layers, at least two connection layers provided between the at least three metallic magnetic layers, each having an insulating layer and current confined paths including a metallic magnetic material penetrating the insulating layer, and electrodes which supply a current perpendicularly to a plane of a stacked film of the metallic magnetic layers and the connection layers.
摘要翻译： 磁阻元件包括至少三个金属磁性层，设置在至少三个金属磁性层之间的至少两个连接层，每个具有绝缘层和包含透过绝缘层的金属磁性材料的电流限制路径，以及提供 电流垂直于金属磁性层和连接层的叠层膜的平面。
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公开(公告)号：US08153188B2
公开(公告)日：2012-04-10
申请号：US12248578
申请日：2008-10-09
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , G11C11/161 , H01L27/224 , H01L27/228 , H01L43/08 , Y10T428/115
摘要： The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.
摘要翻译： 本发明涉及一种用于制造具有磁化钉扎层，磁化自由层和间隔层的磁阻元件的方法，所述隔离层包括设置在磁化被钉扎层和磁化自由层之间的绝缘层，以及穿透绝缘层的电流路径 。 在该方法中形成间隔层的工艺包括沉积形成金属路径的第一金属层，在第一金属层上沉积第二金属层，执行用离子束或RF等离子体照射第二金属层的预处理 稀有气体，并且通过供给氧化气体或氮化气体将第二金属层转化为绝缘层。
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77.发明申请公开(公告)号：US20100226048A1
公开(公告)日：2010-09-09
申请号：US11525076
申请日：2006-09-22
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T428/1121
摘要： A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.
摘要翻译： 提供了由旋转传递转矩引起的噪声减小的磁阻效应元件，磁阻效应头，磁存储器和磁存储器。 在包括固定磁化层，间隔层和自由磁化层的磁阻效应元件的固定磁化层或自由磁化层中; 设置包含选自Ti，Zr，Nb，Mo，Ru，Rh，Pd，Ag，La，Hf，Ta，W，Re，Os，Ir，Pt和Au中的一种元素的层。
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78.发明申请公开(公告)号：US20090141408A1
公开(公告)日：2009-06-04
申请号：US12366972
申请日：2009-02-06
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。
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79.发明授权Magnetoresistive effect element, and magnetic head and magnetic reproducing apparatus including the same 有权磁阻效应元件和包括该磁阻效应元件的磁头和磁性重放装置公开(公告)号：US07522390B2
公开(公告)日：2009-04-21
申请号：US11248203
申请日：2005-10-13
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Hitoshi Iwasaki
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3929 , G11B5/398 , G11B2005/3996
摘要： A spin-valve magnetoresistive effect film includes a magnetization fixed layer, a magnetization free layer, and an intermediate layer interposed therebetween. The intermediate layer has a conduction part disposed in an insulation layer and made of a magnetic metal material. The ferromagnetic film stacked on an upper side of the intermediate layer, out of ferromagnetic films constituting the magnetization fixed layer and the magnetization free layer has a perpendicular orientation part which is disposed above the conduction part and whose crystal growth direction is substantially perpendicular to a film plane, and a non-perpendicular orientation part which exists in a portion other than the perpendicular orientation part. A magnetoresistive effect element has a pair of electrodes passing a sense current in a direction perpendicular to the film plane of the magnetoresistive effect film.
摘要翻译： 自旋阀磁阻效应膜包括磁化固定层，无磁化层和插入其间的中间层。 中间层具有设置在绝缘层中并由磁性金属材料制成的导电部分。 堆叠在中间层的上侧的铁磁性膜，构成磁化固定层的铁磁性膜和不含磁化层的铁磁性膜具有垂直取向部，该垂直取向部设置在导电部的上方，晶体生长方向大致垂直于膜 平面，以及存在于除垂直取向部以外的部分的非垂直取向部。 磁阻效应元件具有一对在垂直于磁阻效应膜的膜平面的方向上通过感测电流的电极。
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公开(公告)号：US07514117B2
公开(公告)日：2009-04-07
申请号：US11199448
申请日：2005-08-09
IPC分类号： B05D5/12
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , G11C11/161 , H01L27/224 , H01L27/228 , H01L43/08 , Y10T428/115
摘要： The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.
摘要翻译： 本发明涉及一种用于制造具有磁化钉扎层，磁化自由层和间隔层的磁阻元件的方法，所述隔离层包括设置在磁化被钉扎层和磁化自由层之间的绝缘层，以及穿透绝缘层的电流路径 。 在该方法中形成间隔层的工艺包括沉积形成金属路径的第一金属层，在第一金属层上沉积第二金属层，执行用离子束或RF等离子体照射第二金属层的预处理 稀有气体，并且通过供给氧化气体或氮化气体将第二金属层转化为绝缘层。
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