摘要:
A shoe press belt capable of preventing the occurrence and growth of cracks therein and is used in a paper-making press apparatus containing a press roll, a belt, and a pressure shoe for pressing a material web, wherein the shoe press belt includes a reinforcing layer, a first elastic material layer, and a second elastic material layer. A plurality of grooves are formed at an exterior peripheral surface region of the first elastic material layer. The bottom of the grooves at an axial end region of the belt corresponding to at least one of an end-proximate region in an axial direction of the pressure shoe and an end-proximate region in an axial direction of the press roll extends toward the reinforcing layer relative to the bottom of the grooves at a region other than the end region.
摘要:
A resin roll (1) comprises a lower winding layer (3) comprising a fiber-reinforced resin formed on an outer periphery of a roll core (2), and an outer sleeve (5) comprising a synthetic resin formed on the outside through an adhesive layer (4). A non-woven fiber aggregate layer (8) which constitutes an outer periphery of the lower winding layer (3) is formed such that a tape-shaped non-woven fiber aggregate in which a fiber material mainly comprising inorganic fibers is coupled with a binder is sequentially transferred and the non-woven fiber aggregate is impregnated with a liquid thermosetting resin and wound around the outer periphery of the roll core (2).
摘要:
An electrical actuator comprises two or more electrical motors to drive a threaded screw ram. Each motor has an armature that drives a threaded roller screw that is engaged to the threaded screw ram. Each armature of each motor is independently engageable and/or dis-engageable with the ram. The motor armatures are engageable and disengageable by way of threaded roller screws, the ends of which are tapered to enable them to be lifted away from or lowered into engagement with the threaded ram.
摘要:
A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.
摘要:
A pressure sensor of electric capacitance type which includes a plurality of pressure sensor units connected in parallel with one another and each formed on a substrate by an electrode, a cavity region and a diaphragm having an electrically conductive film which is disposed in opposition to the electrode with the cavity region intervening between the electrode and the diaphragm, wherein diaphragm fixing portions are disposed internally of the cavity region so that a single sheet of the diaphragm is partitionarily and regionally allotted to regions of the plural pressure sensor units, respectively. With this structure of the capacitance-type pressure sensor, ineffective region for capacitance detection is minimized and hence the parasitic capacitance can be reduced with the detection accuracy of the sensor being improved.
摘要:
An isolator is made monolithic by forming a capacitive insulating barrier using an interlayer insulation film on the semiconductor substrate to miniaturize the modem device by the monolithic isolator.
摘要:
In an interface device in which by means of a buried insulation film 412 and a region insulation portion 410 an SOI substrate 414 is divided into a semiconductor support substrate region 411, a controller side region 407 and a network side region 408 and a part of isolator circuits 405 and 406 making use of a static capacitance are formed in the network side region 408, the semiconductor support substrate region 411 and the network side region 408 are connected to a network power source to always keep these regions at a same potential, thereby, an interface device using a dielectric isolation substrate which suppresses erroneous operations due to noises and characteristic deterioration, and a system using the same are provided.
摘要:
An endless belt in which a fibrous material is dispersed in a substantially uniform manner all over an endless elastic body layer is provided. A non-woven tape is impregnated with a polyurethane elastomer material liquid and wound and layered on a supporting belt, and then, after curing the polyurethane elastomer material liquid to form an elastic body, it is removed from supporting belt.
摘要:
In a resin roll 5 for calendering a magnetic recording medium, a surface portion 3a of a thermosetting resin outer layer 3 has high storage elastic modulus (E') of 5.times.10.sup.10 to 5.times.10.sup.11 dyn/cm.sup.2 at a temperature of 50 to 150.degree. C. at a frequency of 10 hertz (Hz). At the surface portion of the thermosetting resin outer layer, the expression representing the relation between storage elastic modulus (E') and the Poisson's ratio (.nu.) is within the following range, under the same conditions:2.times.10.sup.-12 cm.sup.2 /dyn
摘要翻译:在用于压延磁记录介质的树脂辊5中,热固性树脂外层3的表面部分3a在50至150℃的温度下具有5×10 10至5×10 11 dyn / cm 2的高储存弹性模量(E') 频率为10赫兹(Hz)。 在热固性树脂外层的表面部分,表示储存弹性模量(E')与泊松比(nu)之间的关系的表达式在以下相同的条件下,在相同的条件下:2×10-12cm 2 / dyn( 1-nu 2)/ E'<2×10-11 cm 2 / dyn
摘要:
In a semiconductor device, such as a diode and thyristor, having at least one pn junction between a pair of main surfaces, a first main electrode formed on the surface of one of the main surfaces and a second main electrode formed on the surface of the other one of the main surfaces, a semiconductor lattice defect is formed such that its lattice defect density increases gradually in the direction from the first main electrode to the second main electrode. Since the distribution of the carrier density in the conduction state can be flattened, the reverse recovery charge can be reduced substantially without causing the ON-state voltage to increase.