公开(公告)号：US08219942B2

公开(公告)日：2012-07-10

申请号：US12487554

申请日：2009-06-18

申请人： Masamitsu Itoh ,  Satoshi Tanaka

发明人： Masamitsu Itoh ,  Satoshi Tanaka

IPC分类号： G06F17/50

CPC分类号： G03F1/86

摘要： A pattern verification-test method according to an embodiment of the present invention includes: deriving an illumination condition at a verification-test subject position in a photomask surface of a mask pattern as a verification or a test subject based on the verification-test subject position and illumination condition information about a distribution of an illumination condition in a photomask surface of exposure light incident on the mask pattern, performing lithography simulation on the mask pattern based on the derived illumination condition and the mask pattern, and verifying or testing the mask pattern based on a result of the lithography simulation.

摘要翻译： 根据本发明的实施例的图案验证测试方法包括：基于验证测试对象位置，在掩模图案的光掩模表面中的验证测试对象位置处作为验证或测试对象导出照明条件 以及关于入射到掩模图案的曝光光的光掩模表面中的照明条件的分布的照明条件信息，基于导出的照明条件和掩模图案对掩模图案进行光刻模拟，以及基于掩模图案的验证或测试 在光刻模拟的结果。

公开(公告)号：US20120091370A1

公开(公告)日：2012-04-19

申请号：US13326612

申请日：2011-12-15

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： G21K5/00

CPC分类号： G21K5/10 ,  B29C35/0894 ,  B29C37/0053 ,  B29C43/021 ,  B29C43/58 ,  B29C2043/025 ,  B29C2043/142 ,  B29C2043/3634 ,  B29C2043/5833 ,  B82Y10/00 ,  B82Y40/00 ,  G01B11/03 ,  G03F1/00 ,  G03F7/0002 ,  H01L21/02356

摘要： A pattern is formed on a mask substrate. Positional deviation information between an actual position of the pattern formed on the mask substrate and a design position decided at the time of designing the pattern is calculated. A heterogeneous layer of which a volume expands more greatly than that of surrounding mask substrate region is formed in a predetermined position within the mask substrate so that volume expansion of the heterogeneous layer according to the positional deviation information is achieved.

摘要翻译： 在掩模基板上形成图案。 计算形成在掩模基板上的图案的实际位置与设计图案时确定的设计位置之间的位置偏差信息。 在掩模基板内的预定位置形成体积比周围掩模基板区域更大地膨胀的异质层，从而实现根据位置偏差信息的异质层的体积膨胀。

公开(公告)号：US08097539B2

公开(公告)日：2012-01-17

申请号：US12350394

申请日：2009-01-08

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： H01L21/311

CPC分类号： G21K5/10 ,  B29C35/0894 ,  B29C37/0053 ,  B29C43/021 ,  B29C43/58 ,  B29C2043/025 ,  B29C2043/142 ,  B29C2043/3634 ,  B29C2043/5833 ,  B82Y10/00 ,  B82Y40/00 ,  G01B11/03 ,  G03F1/00 ,  G03F7/0002 ,  H01L21/02356

摘要： A pattern is formed on a mask substrate. Positional deviation information between an actual position of the pattern formed on the mask substrate and a design position decided at the time of designing the pattern is calculated. A heterogeneous layer of which a volume expands more greatly than that of surrounding mask substrate region is formed in a predetermined position within the mask substrate so that volume expansion of the heterogeneous layer according to the positional deviation information is achieved.

摘要翻译： 在掩模基板上形成图案。 计算形成在掩模基板上的图案的实际位置与设计图案时确定的设计位置之间的位置偏差信息。 在掩模基板内的预定位置形成体积比周围掩模基板区域更大地膨胀的异质层，从而实现根据位置偏差信息的异质层的体积膨胀。

公开(公告)号：US20090035880A1

公开(公告)日：2009-02-05

申请号：US12232567

申请日：2008-09-19

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： H01L21/00

CPC分类号： G03F7/707 ,  G03F1/60 ,  G03F7/703 ,  G03F7/70433 ,  G03F7/70783 ,  Y10S438/975

摘要： There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.

摘要翻译： 公开了一种用于曝光掩模的制造方法，其包括获取表示多个掩模基板中的每一个的表面的表面形状的第一信息，以及示出在夹持之前和之后每个掩模基板的表面的平坦度的第二信息 曝光装置的掩模台，形成每个掩模基板的对应关系，第一信息和第二信息，选择表示对应关系的第二信息之间的期望的平坦度的第二信息，以及准备另一掩模基板 表面形状作为由与所选择的第二信息的对应关系中的第一信息指示的表面形状，并且在上述另一掩模基板上形成期望的图案。

公开(公告)号：US20080311486A1

公开(公告)日：2008-12-18

申请号：US12026293

申请日：2008-02-05

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： B82Y40/00 ,  B82Y10/00 ,  G03F1/24 ,  G03F1/36

摘要： A photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a reflective layer formed on a substrate and an absorber pattern is formed on the layer. A reflection correction coefficient map is generated by dividing a mask region, where the absorber pattern is formed, into a plurality of subregions, and determining a reflection correction coefficient for each subregion. The reflection correction value of each subregion is calculated based on the dimensional difference indicated in the pattern dimensional map and the reflection correction coefficient of each subregion. A reflection coefficient of each reflective layer region corresponding to each subregion is changed based on the reflection correction value.

摘要翻译： 光掩模制造方法。 通过制备其中形成在衬底上的反射层和在该层上形成吸收体图案的光掩模来生成图案尺寸图。 通过将形成有吸收体图案的掩模区域划分成多个子区域，并且确定每个子区域的反射校正系数来生成反射校正系数图。 基于图案尺寸图中指示的尺寸差和每个子区域的反射校正系数来计算每个子区域的反射校正值。 基于反射校正值改变对应于每个子区域的每个反射层区域的反射系数。

公开(公告)号：US07384713B2

公开(公告)日：2008-06-10

申请号：US10853532

申请日：2004-05-26

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： G03F1/00

CPC分类号： G03F1/60 ,  G03F1/84

摘要： A method of manufacturing an exposure mask blank including a substrate and a light-shielding film formed on the substrate, comprising measuring a first flatness of each of a plurality of substrates before formation of a light-shielding film, predicting, on the basis of the first flatness, a second flatness of each substrate when chucked on an exposure apparatus, selecting from the plurality of substrates, at least one substrate having a predetermined flatness on the basis of the second flatness, predicting a desired third flatness of the at least one substrate after a light-shielding film is formed on the substrate, forming a light-shielding film on the selected at least one substrate, measuring a fourth flatness of the at least one substrate having the formed light-shielding film, and determining whether the at least one substrate having the light-shielding film has the desired third flatness by comparing the fourth flatness with the third flatness.

摘要翻译： 一种制造包括形成在基板上的基板和遮光膜的曝光掩模坯料的方法，包括在形成遮光膜之前测量多个基板中的每一个的第一平坦度，基于 第一平面度，当夹在曝光装置上时，每个基板的第二平面度，从多个基板中选择基于第二平坦度具有预定平坦度的至少一个基板，预测至少一个基板的期望的第三平坦度 在基板上形成遮光膜之后，在所选择的至少一个基板上形成遮光膜，测量具有所形成的遮光膜的至少一个基板的第四平面度，并确定至少 通过将第四平面度与第三平面度进行比较，具有遮光膜的一个基板具有期望的第三平坦度。

公开(公告)号：US07354869B2

公开(公告)日：2008-04-08

申请号：US11103472

申请日：2005-04-12

申请人： Hideaki Sakurai ,  Masamitsu Itoh

发明人： Hideaki Sakurai ,  Masamitsu Itoh

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/6708

摘要： A method for a substrate processing apparatus having a substrate holding mechanism and a chemical solution dispensing/sucking mechanism including a chemical solution dispensing port for supplying a first chemical solution and a chemical solution suction port, includes placing the target substrate on the substrate holding mechanism, laying out an auxiliary plate at a periphery of the substrate such that the two main faces are substantially flush with each other, supplying a second chemical solution onto the main faces, dispensing the first solution from the dispensing port and sucking the first and second solutions through the suction port, with the dispensing and suction ports brought into contact with the second solution, and while dispensing the first solution from the dispensing port and sucking the first solution through the suction port, scanning the dispensing/sucking mechanism such that the dispensing and suction ports are opposed to the main face of the substrate.

公开(公告)号：US20080028361A1

公开(公告)日：2008-01-31

申请号：US11878018

申请日：2007-07-20

申请人： Eiji Yamanaka ,  Masamitsu Itoh ,  Mitsuyo Asano ,  Shinji Yamaguchi

发明人： Eiji Yamanaka ,  Masamitsu Itoh ,  Mitsuyo Asano ,  Shinji Yamaguchi

IPC分类号： G06F17/50

CPC分类号： G03F1/84

摘要： A pattern evaluation method for evaluating a mask pattern includes generating desired wafer pattern data corresponding to the evaluation position of a mask pattern, generating mask pattern contour data based on an image of the mask pattern, and performing a lithography/simulation process based on the mask pattern contour data and generating predicted wafer pattern data when the mask pattern is transferred to a wafer. Further, it includes deriving positional offset between the mask pattern contour data and mask pattern data, correcting a positional error between the desired wafer pattern data and the predicted wafer pattern data based on the positional offset, and comparing the desired wafer pattern data with the predicted wafer pattern data with the positional error corrected.

摘要翻译： 用于评估掩模图案的图案评估方法包括生成与掩模图案的评估位置相对应的期望的晶片图形数据，基于掩模图案的图像生成掩模图案轮廓数据，以及基于掩模执行光刻/模拟处理 图案轮廓数据，并且当掩模图案被转印到晶片时产生预测的晶片图形数据。 此外，其包括导出掩模图案轮廓数据和掩模图案数据之间的位置偏移，基于位置偏移校正期望的晶片图案数据和预测的晶片图案数据之间的位置误差，并将期望的晶片图案数据与预测的晶片图案数据进行比较 具有校正位置误差的晶片图形数据。

公开(公告)号：US07313781B2

公开(公告)日：2007-12-25

申请号：US11138408

申请日：2005-05-27

申请人： Mitsuyo Asano ,  Masamitsu Itoh ,  Eiji Yamanaka ,  Shinji Yamaguchi

发明人： Mitsuyo Asano ,  Masamitsu Itoh ,  Eiji Yamanaka ,  Shinji Yamaguchi

IPC分类号： G06F17/50

CPC分类号： G03F1/84 ,  G03F1/44 ,  G03F1/68

摘要： An image data correction method includes preparing correction data for correcting a distortion of an image obtained by an image acquiring section, acquiring outline data of a desired pattern obtained by the image acquiring section, and correcting the outline data of the desired pattern using the correction data.

摘要翻译： 图像数据校正方法包括：准备用于校正图像获取部分获得的图像失真的校正数据，获取由图像获取部分获得的期望图案的轮廓数据，并使用校正数据校正所需图案的轮廓数据 。

公开(公告)号：US20070092811A1

公开(公告)日：2007-04-26

申请号：US11585130

申请日：2006-10-24

申请人： Kazuya Fukuhara ,  Masamitsu Itoh

发明人： Kazuya Fukuhara ,  Masamitsu Itoh

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F1/84 ,  G03F1/44

摘要： According to an aspect of the invention, there is provided a method for selecting a photomask substrate, including dividing a chip area scheduled to be arranged on the photomask substrate regarding a specific transfer pattern layer into a management pattern area in which an element pattern changed in shape by birefringence of the photomask substrate is arranged, and an area other than the management pattern area, setting a standard value of a size of birefringence of an area in which the management pattern area of the photomask substrate is arranged, inspecting the size of the birefringence of each of a plurality of photomask substrate candidates, and selecting a photomask substrate, in which the size of the birefringence satisfies the standard value, as a photomask substrate of the specific transfer pattern layer from the plurality of photomask substrate candidates.

摘要翻译： 根据本发明的一个方面，提供了一种用于选择光掩模衬底的方法，包括将针对特定传输图案层排列在光掩模衬底上的芯片区域划分成其中元件图案改变的管理图案区域 布置光掩模基板的双折射形状，并且设置管理图案区域以外的区域，设置布置有光掩模基板的管理图案区域的区域的双折射尺寸的标准值，检查 多个光掩模衬底候选中的每一个的双折射，并且从多个光掩模衬底候选中选择其中双折射的尺寸满足标准值的光掩模衬底作为特定转移图案层的光掩模衬底。