Method of controlling the film properties of PECVD-deposited thin films
    71.
    发明授权
    Method of controlling the film properties of PECVD-deposited thin films 有权
    控制PECVD沉积薄膜的膜性能的方法

    公开(公告)号:US07785672B2

    公开(公告)日:2010-08-31

    申请号:US11021416

    申请日:2004-12-22

    IPC分类号: H05G1/24 H05H1/02

    摘要: We have discovered methods of controlling a combination of PECVD deposition process parameters during deposition of thin films which provides improved control over surface standing wave effects which affect deposited film thickness uniformity and physical property uniformity. By minimizing surface standing wave effects, the uniformity of film properties across a substrate surface onto which the films have been deposited is improved. In addition, we have developed a gas diffusion plate design which assists in the control of plasma density to be symmetrical or asymmetrical over a substrate surface during film deposition, which also provides improved control over uniformity of deposited film thickness.

    摘要翻译: 我们已经发现了在沉积薄膜期间控制PECVD沉积工艺参数的组合的方法,其提供了影响沉积膜厚度均匀性和物理性质均匀性的表面驻波效应的改进控制。 通过最小化表面驻波效应,改善了膜沉积在其上的衬底表面上的膜性质的均匀性。 此外,我们开发了一种气体扩散板设计,其有助于在膜沉积期间等离子体密度在衬底表面上对称或不对称,这也提供了对沉积膜厚度的均匀性的改进的控制。

    RF Bus and RF Return Bus for Plasma Chamber Electrode
    72.
    发明申请
    RF Bus and RF Return Bus for Plasma Chamber Electrode 有权
    射频总线和等离子腔室电极的RF返回总线

    公开(公告)号:US20100206483A1

    公开(公告)日:2010-08-19

    申请号:US12705600

    申请日:2010-02-13

    IPC分类号: C23F1/08 C23C16/00 C23C16/50

    CPC分类号: H01J37/32174 H01J37/32091

    摘要: For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one embodiment, an RF return bus conductor is connected to an electrically grounded wall of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.

    摘要翻译: 为了将来自等离子体室的RF输入的RF功率耦合到等离子体室的内部,RF总线导体连接在RF输入端和等离子体室电极之间。 在一个实施例中,RF返回总线导体连接到室的电接地壁,并且RF总线导体和RF返回总线导体具有彼此平行并相对的相应表面。 在另一个实施例中,RF总线导体具有垂直于等离子体室电极表面的最长尺寸的横截面,其最接近RF总线导体。

    BALL SUPPORTED SHADOW FRAME
    73.
    发明申请
    BALL SUPPORTED SHADOW FRAME 审中-公开
    球支撑阴影框架

    公开(公告)号:US20100122655A1

    公开(公告)日:2010-05-20

    申请号:US12614479

    申请日:2009-11-09

    IPC分类号: B05C11/00 B23P11/00

    摘要: Embodiments disclosed herein generally include an alignment assembly for aligning a shadow frame on a susceptor. For producing large area flat panel displays or solar panels, the shadow frame that protects the areas of the susceptor not covered by the substrate from deposition may be so large that the shadow frame bends and doesn't properly align. By utilizing an alignment assembly having one or more ball bearings, the shadow frame may roll on the susceptor to a proper alignment position. Thus, the shadow frame may be prevented from bending and also align on the susceptor.

    摘要翻译: 本文公开的实施例通常包括用于对准基座上的阴影框架的对准组件。 为了制造大面积平板显示器或太阳能电池板,保护未被基板覆盖的基座的区域沉积的阴影框架可能太大,使得阴影框架弯曲并且不能正确对准。 通过利用具有一个或多个球轴承的对准组件,阴影框架可以在基座上滚动到适当的对准位置。 因此,可以防止阴影框架弯曲并且在基座上对准。

    MULTI-ELECTRODE PECVD SOURCE
    74.
    发明申请
    MULTI-ELECTRODE PECVD SOURCE 有权
    多电极PECVD源

    公开(公告)号:US20100080933A1

    公开(公告)日:2010-04-01

    申请号:US12353638

    申请日:2009-01-14

    IPC分类号: C23C16/505

    摘要: Embodiments of the present invention generally relate to methods and apparatus for plasma generation in plasma processes. The methods and apparatus generally include a plurality of electrodes. The electrodes are connected to a RF power source, which powers the electrodes out of phase from one another. Adjacent electrodes are electrically isolated from one another by electrically insulating members disposed between and coupled to the electrodes. Processing gas may be delivered and/or withdrawn through the electrodes and/or the electrically insulating members. The substrate may remain electrically floating because the plasma may be capacitively coupled to it through a differential RF source drive.

    摘要翻译: 本发明的实施例一般涉及等离子体工艺中等离子体产生的方法和装置。 所述方法和装置通常包括多个电极。 电极连接到RF电源,该电源使电极彼此相位不相位。 相邻的电极通过设置在电极之间并耦合到电极的电绝缘构件彼此电隔离。 处理气体可以通过电极和/或电绝缘构件输送和/或排出。 由于等离子体可以通过差分RF源驱动电容耦合到其上,基板可能保持电浮置。

    Process for making thin film field effect transistors using zinc oxide
    75.
    发明授权
    Process for making thin film field effect transistors using zinc oxide 有权
    使用氧化锌制造薄膜场效应晶体管的工艺

    公开(公告)号:US07674662B2

    公开(公告)日:2010-03-09

    申请号:US11458511

    申请日:2006-07-19

    IPC分类号: H01L21/84

    CPC分类号: H01L29/7869

    摘要: The present invention comprises a method of forming a zinc oxide based thin film transistor by blanket depositing the zinc oxide layer and the source-drain metal layer and then wet etching through the zinc oxide while etching through the source-drain electrode layer. Thereafter, the active channel is formed by dry etching the source-drain electrode layer without effectively etching the zinc oxide layer.

    摘要翻译: 本发明包括通过将氧化锌层和源极 - 漏极金属层进行橡皮沉积形成氧化锌基薄膜晶体管,然后在通过源 - 漏电极层进行蚀刻时通过氧化锌进行湿蚀刻的方法。 此后,通过干蚀刻源漏电极层形成有源沟道,而无需有效地蚀刻氧化锌层。

    Methods and apparatus for a high resolution inkjet fire pulse generator
    76.
    发明授权
    Methods and apparatus for a high resolution inkjet fire pulse generator 失效
    高分辨率喷墨式脉冲发生器的方法和装置

    公开(公告)号:US07637580B2

    公开(公告)日:2009-12-29

    申请号:US11238637

    申请日:2005-09-29

    IPC分类号: B41J29/38

    摘要: The invention provides methods, systems, and drivers for controlling an inkjet printing system. The driver may include logic including a processor, memory coupled to the logic, and a fire pulse generator circuit coupled to the logic. The fire pulse generator may include a connector to facilitate coupling the driver to a print head. The fire pulse generator circuit may also include a fixed current source circuit adapted to generate a fire pulse with a constant slew rate that facilitates easy adjustment of ink drop size. The logic is adapted to receive an image and to convert the image to an image data file. The image data file is adapted to be used by the driver to trigger the print head to deposit ink into pixel wells on a substrate as the substrate is moved in a print direction. Numerous other aspects are disclosed.

    摘要翻译: 本发明提供了用于控制喷墨打印系统的方法,系统和驱动程序。 驱动器可以包括逻辑,其包括处理器,耦合到逻辑的存储器和耦合到逻辑的触发脉冲发生器电路。 火脉冲发生器可以包括用于便于将驱动器连接到打印头的连接器。 火脉冲发生器电路还可以包括固定电流源电路,其适于产生具有恒定压摆率的发射脉冲,其有利于容易地调节墨滴尺寸。 该逻辑适于接收图像并将图像转换为图像数据文件。 图像数据文件适于由驱动器使用,以在基板沿着打印方向移动时触发打印头将墨水沉积在基板上的像素孔中。 公开了许多其他方面。

    Methods and systems for inkjet drop positioning
    77.
    发明授权
    Methods and systems for inkjet drop positioning 失效
    喷墨定位方法和系统

    公开(公告)号:US07611217B2

    公开(公告)日:2009-11-03

    申请号:US11238636

    申请日:2005-09-29

    IPC分类号: B41J29/38

    CPC分类号: B41J29/393

    摘要: Methods and apparatus for inkjet inkjet drop positioning are provided. A first method includes determining an intended deposition location of an ink drop on a substrate, depositing the ink drop on the substrate using an inkjet printing system, detecting a deposited location of the deposited ink drop on the substrate, comparing the deposited location to the intended location, determining a difference between the deposited location and the intended location, and compensating for the difference between the deposited location and the intended location by adjusting a parameter of an inkjet printing system. Numerous other aspects are provided.

    摘要翻译: 提供喷墨喷墨滴定位的方法和装置。 第一种方法包括确定墨滴在基底上的预期沉积位置,使用喷墨印刷系统将墨滴沉积在基底上,检测沉积的墨滴在基底上的沉积位置,将沉积位置与预期的位置进行比较 确定存放位置与预期位置之间的差异,以及通过调整喷墨打印系统的参数来补偿存放位置与预期位置之间的差异。 提供了许多其他方面。

    CVD process gas flow, pumping and/or boosting
    80.
    发明授权
    CVD process gas flow, pumping and/or boosting 失效
    CVD工艺气体流动,泵送和/或增压

    公开(公告)号:US07588957B2

    公开(公告)日:2009-09-15

    申请号:US11873617

    申请日:2007-10-17

    申请人: John M. White

    发明人: John M. White

    IPC分类号: H01L21/00

    摘要: The present invention generally comprises a method and apparatus for supplemental pumping, gas feed, and/or RF current for a process. When depositing amorphous silicon, the amount of process gases, RF current, and vacuum may be less than the amount of process gases, RF current, and vacuum necessary to deposit microcrystalline silicon. When a single chamber is used to deposit both amorphous and microcrystalline silicon, coupling a supplemental power supply, a supplemental gas source, and a supplemental vacuum pump to the chamber may be beneficial. The supplemental power supply, vacuum pump, and gas source, may be coupled with the chamber when the microcrystalline silicon is deposited and uncoupled when amorphous silicon is deposited. In a cluster tool arrangement, the supplemental power supply, vacuum pump, and gas source may serve multiple chambers that each deposit both amorphous and microcrystalline silicon.

    摘要翻译: 本发明通常包括用于过程的补充泵送,气体进料和/或RF电流的方法和装置。 当沉积非晶硅时,工艺气体的量,RF电流和真空度可以小于沉积微晶硅所需的工艺气体,RF电流和真空的量。 当使用单个室来沉积非晶硅和微晶硅时,将辅助电源,补充气体源和补充真空泵耦合到腔室可能是有益的。 补充电源,真空泵和气源可以在微晶硅沉积时与腔室耦合,当非晶硅沉积时,该电解质分离。 在集群工具装置中,补充电源,真空泵和气体源可以服务于多个室,每个室均沉积非晶硅和微晶硅。