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    Large area plasma processing chamber with at-electrode RF matching
    1.
    发明授权
    Large area plasma processing chamber with at-electrode RF matching 有权
    大面积等离子体处理室，具有电极RF匹配

    公开(公告)号：US08691047B2

    公开(公告)日：2014-04-08

    申请号：US12948164

    申请日：2010-11-17

    申请人： Carl A. Sorensen ,  John M. White ,  Jozef Kudela

    发明人： Carl A. Sorensen ,  John M. White ,  Jozef Kudela

    IPC分类号： C23C16/505 ,  H01L21/3065

    CPC分类号： H01J37/32577 ,  H01J37/32091 ,  H01J37/32183

    摘要： A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.

    摘要翻译： 提供具有电极射频匹配的等离子体处理系统以及利用该等离子体处理基板的方法。 在一个实施例中，等离子体处理系统包括室主体，衬底支撑件，电极，盖组件和RF调谐元件。 基板支撑件设置在室主体中限定的处理空间中。 电极位于衬底支撑件的上方并位于盖子组件的盖子的下面。 RF调谐元件设置在盖和电极之间并且耦合到电极。

    Asymmetrical RF Drive for Electrode of Plasma Chamber
    4.
    发明申请
    Asymmetrical RF Drive for Electrode of Plasma Chamber 有权
    等离子室电极的非对称RF驱动

    公开(公告)号：US20090159423A1

    公开(公告)日：2009-06-25

    申请号：US12343519

    申请日：2008-12-24

    申请人： Jozef Kudela ,  Carl A. Sorensen ,  Soo Young Choi ,  John M. White

    发明人： Jozef Kudela ,  Carl A. Sorensen ,  Soo Young Choi ,  John M. White

    IPC分类号： H05H1/00 ,  H01L21/3065 ,  B23H7/14

    CPC分类号： H01L21/02 ,  B44C1/227 ,  C23C16/513 ,  H01J37/32091 ,  H01J37/32577 ,  H01L21/02104

    摘要： RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.

    摘要翻译： RF功率耦合到等离子体室的电极（20-28）上的一个或多个RF驱动点（50-56），使得耦合到RF驱动点（51-52,55-56）的RF功率的电平 更靠近工件通道（12）的电极的一半（61）超过了电极的另一半（62）上耦合到RF驱动点（53-54）的RF功率的水平（如果有的话） 。 或者，RF功率耦合到等离子体室的电极上的一个或多个RF驱动点，使得驱动点位置的加权平均值在电极的中心（60）和工件通道之间。 加权平均值基于通过耦合到该驱动点位置的RF功率的时间平均水平来加权每个驱动点位置。 本发明抵消等离子体密度的增加，否则其将邻近电极最靠近通道的端部存在。

    RF Bus and RF Return Bus for Plasma Chamber Electrode
    8.
    发明申请
    RF Bus and RF Return Bus for Plasma Chamber Electrode 有权
    射频总线和等离子腔室电极的RF返回总线

    公开(公告)号：US20100206483A1

    公开(公告)日：2010-08-19

    申请号：US12705600

    申请日：2010-02-13

    申请人： Carl A. Sorensen ,  Jozef Kudela ,  Robin L. Tiner ,  Suhail Anwar ,  John M. White

    发明人： Carl A. Sorensen ,  Jozef Kudela ,  Robin L. Tiner ,  Suhail Anwar ,  John M. White

    IPC分类号： C23F1/08 ,  C23C16/00 ,  C23C16/50

    CPC分类号： H01J37/32174 ,  H01J37/32091

    摘要： For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one embodiment, an RF return bus conductor is connected to an electrically grounded wall of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.

    摘要翻译： 为了将来自等离子体室的RF输入的RF功率耦合到等离子体室的内部，RF总线导体连接在RF输入端和等离子体室电极之间。 在一个实施例中，RF返回总线导体连接到室的电接地壁，并且RF总线导体和RF返回总线导体具有彼此平行并相对的相应表面。 在另一个实施例中，RF总线导体具有垂直于等离子体室电极表面的最长尺寸的横截面，其最接近RF总线导体。

    MULTI-ELECTRODE PECVD SOURCE
    9.
    发明申请
    MULTI-ELECTRODE PECVD SOURCE 有权
    多电极PECVD源

    公开(公告)号：US20100080933A1

    公开(公告)日：2010-04-01

    申请号：US12353638

    申请日：2009-01-14

    申请人： Jozef Kudela ,  John M. White

    发明人： Jozef Kudela ,  John M. White

    IPC分类号： C23C16/505

    CPC分类号： C23C16/5096 ,  C23C16/54 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32752

    摘要： Embodiments of the present invention generally relate to methods and apparatus for plasma generation in plasma processes. The methods and apparatus generally include a plurality of electrodes. The electrodes are connected to a RF power source, which powers the electrodes out of phase from one another. Adjacent electrodes are electrically isolated from one another by electrically insulating members disposed between and coupled to the electrodes. Processing gas may be delivered and/or withdrawn through the electrodes and/or the electrically insulating members. The substrate may remain electrically floating because the plasma may be capacitively coupled to it through a differential RF source drive.

    摘要翻译： 本发明的实施例一般涉及等离子体工艺中等离子体产生的方法和装置。 所述方法和装置通常包括多个电极。 电极连接到RF电源，该电源使电极彼此相位不相位。 相邻的电极通过设置在电极之间并耦合到电极的电绝缘构件彼此电隔离。 处理气体可以通过电极和/或电绝缘构件输送和/或排出。 由于等离子体可以通过差分RF源驱动电容耦合到其上，基板可能保持电浮置。

    Tightly fitted ceramic insulator on large area electrode
    10.
    发明授权
    Tightly fitted ceramic insulator on large area electrode 有权
    在大面积电极上紧密配合陶瓷绝缘子

    公开(公告)号：US09068262B2

    公开(公告)日：2015-06-30

    申请号：US13110184

    申请日：2011-05-18

    申请人： Jozef Kudela ,  Jonghoon Baek ,  John M. White ,  Robin Tiner ,  Suhail Anwar ,  Gaku Furuta

    发明人： Jozef Kudela ,  Jonghoon Baek ,  John M. White ,  Robin Tiner ,  Suhail Anwar ,  Gaku Furuta

    IPC分类号： C23C16/455 ,  C23C16/509 ,  H01J37/32

    CPC分类号： B05B1/185 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32651 ,  Y10T137/6851

    摘要： Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

    摘要翻译： 本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件，所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。 在一个实施例中，喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。 多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。 在其它实施例中，绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场，从而减少电弧电势。