公开(公告)号：US07785672B2

公开(公告)日：2010-08-31

申请号：US11021416

申请日：2004-12-22

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Beom Soo Park

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Beom Soo Park

IPC分类号： H05G1/24 ,  H05H1/02

CPC分类号： H01J37/32082 ,  C23C16/345 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/31612

摘要： We have discovered methods of controlling a combination of PECVD deposition process parameters during deposition of thin films which provides improved control over surface standing wave effects which affect deposited film thickness uniformity and physical property uniformity. By minimizing surface standing wave effects, the uniformity of film properties across a substrate surface onto which the films have been deposited is improved. In addition, we have developed a gas diffusion plate design which assists in the control of plasma density to be symmetrical or asymmetrical over a substrate surface during film deposition, which also provides improved control over uniformity of deposited film thickness.

摘要翻译： 我们已经发现了在沉积薄膜期间控制PECVD沉积工艺参数的组合的方法，其提供了影响沉积膜厚度均匀性和物理性质均匀性的表面驻波效应的改进控制。 通过最小化表面驻波效应，改善了膜沉积在其上的衬底表面上的膜性质的均匀性。 此外，我们开发了一种气体扩散板设计，其有助于在膜沉积期间等离子体密度在衬底表面上对称或不对称，这也提供了对沉积膜厚度的均匀性的改进的控制。

公开(公告)号：US10676817B2

公开(公告)日：2020-06-09

申请号：US13569064

申请日：2012-08-07

申请人： Qunhua Wang ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

发明人： Qunhua Wang ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

IPC分类号： C23C16/04 ,  C23C16/458 ,  C23C14/04

摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

公开(公告)号：US08083853B2

公开(公告)日：2011-12-27

申请号：US10889683

申请日：2004-07-12

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US20130263782A1

公开(公告)日：2013-10-10

申请号：US13569064

申请日：2012-08-07

申请人： QUNHUA WANG ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

发明人： QUNHUA WANG ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

IPC分类号： C23C16/04

摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

摘要翻译： 本文描述了用于处理衬底的装置。 用于控制基板上的沉积的装置可以包括：腔室，其包括阴影框架支撑件，包括基板支撑表面的基板支撑件，具有包括第一支撑表面的阴影框架主体的阴影框架，与第一表面相对的第二支撑表面， 以及与阴影框体连接的可拆卸唇缘。 可拆卸唇缘可以包括支撑连接，面向基底的第一唇缘表面，与第一唇缘表面相对的第二唇缘表面，位于第一支撑表面上方的第一边缘以及与第一边缘相对的第二边缘以接触基底。

公开(公告)号：US09200368B2

公开(公告)日：2015-12-01

申请号：US13207227

申请日：2011-08-10

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/455 ,  C23C16/34 ,  C23C16/509 ,  H01J37/32

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US20110290183A1

公开(公告)日：2011-12-01

申请号：US13207227

申请日：2011-08-10

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/455

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US07125758B2

公开(公告)日：2006-10-24

申请号：US10829016

申请日：2004-04-20

申请人： Soo Young Choi ,  Tae Kyung Won ,  Gaku Furuta ,  Qunhua Wang ,  John M. White ,  Beom Soo Park

发明人： Soo Young Choi ,  Tae Kyung Won ,  Gaku Furuta ,  Qunhua Wang ,  John M. White ,  Beom Soo Park

IPC分类号： H01L21/471

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02274 ,  H01L21/3185 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669

摘要： We have developed a method of PECVD depositing a-SiNx:H films which are useful in a TFT device as gate dielectric and passivation layers, when a series of TFT devices are arrayed over a substrate having a surface area larger than about 1 m2, which may be in the range of about 4.1 m2, and even as large as 9 m2. The a-SiNx:H films provide a uniformity of film thickness and uniformity of film properties, including chemical composition, which are necessary over such large substrate surface areas. The films produced by the method are useful for both liquid crystal active matrix displays and for organic light emitting diode control.

摘要翻译： 我们已经开发了一种PECVD沉积a-SiN＆lt; x＆gt;：H膜的方法，其可用于TFT器件作为栅极电介质和钝化层，当一系列TFT​​器件排列在具有表面的衬底上时 大于约1m 2的区域，其可以在约4.1m 2范围内，甚至大至9m 2/2。 a-SiN＆lt; x＆gt;：H膜提供了膜厚度的均匀性和膜特性的均匀性，包括在这种大的基材表面区域上必需的化学成分。 通过该方法生产的膜对于液晶有源矩阵显示器和有机发光二极管控制是有用的。

公开(公告)号：US08174400B2

公开(公告)日：2012-05-08

申请号：US13042408

申请日：2011-03-07

申请人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

发明人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

IPC分类号： G08B21/00

CPC分类号： H01J37/32174 ,  H01J37/32935 ,  H03H7/40

摘要： Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.

摘要翻译： 通过检测可变频率RF电源的频率是否移动到建立的下限和上限之外，来检测RF供电的等离子体处理室内的异常情况。 在第一方面，根据在新处理步骤开始之后或在采样控制信号改变状态之后采样的电源的频率，建立第一对下限和上限。 在第二方面，第二对下限和上限不适合电源的频率。 两个方面优选一起用于检测异常状况的不同出现。

公开(公告)号：US20110095402A1

公开(公告)日：2011-04-28

申请号：US12930230

申请日：2010-12-30

申请人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： H01L29/51

CPC分类号： E06C7/48 ,  E06C7/482 ,  E06C7/484

摘要： An α-SiNx:H gate dielectric film deposited over a substrate surface having a surface area larger than 100 cm×100 cm, wherein said α-SiNx:H gate dielectric film exhibits a film thickness which varies by less than about 20% over said surface area, a film density which varies by less than about 17% over said surface area, and wherein said film exhibits a Si—H bonded structure content of less than about 15 atomic % over said surface area.

摘要翻译： 一种沉积在表面积大于100cm×100cm的衬底表面上的α-SiNx：H栅极电介质膜，其中所述α-SiNx：H栅极电介质膜的膜厚比所述 表面积，比所述表面积变化小于约17％的膜密度，并且其中所述膜在所述表面积上表现出小于约15原子％的Si-H键合结构含量。

公开(公告)号：US20100245084A1

公开(公告)日：2010-09-30

申请号：US12661699

申请日：2010-03-19

申请人： Beom Soo Park ,  Hong Soon Kim ,  Soo Young Choi ,  James Hoffman ,  Suhail Anwar ,  John M. White

发明人： Beom Soo Park ,  Hong Soon Kim ,  Soo Young Choi ,  James Hoffman ,  Suhail Anwar ,  John M. White

IPC分类号： G08B21/00

CPC分类号： H01J37/32183 ,  H01J37/32935 ,  H01J37/3299

摘要： Malfunction of a component within an RF-powered plasma chamber is detected by observing an operating condition of the plasma chamber and detecting when the operating condition deviates from a previously observed range bounded by lower and upper limits. The lower and upper limits are determined by observing the minimum and maximum values of that operating condition during the processing of workpieces throughout one or more plasma chamber cleaning cycles immediately preceding the most recent cleaning of the plasma chamber.

摘要翻译： 通过观察等离子体室的操作状态并检测何时操作条件偏离由下限和上限限定的先前观察范围，来检测RF供电的等离子体室内部件的故障。 通过在紧邻等离子体室的最近清洁之前的一个或多个等离子体室清洁循环期间观察工件处理期间该操作条件的最小值和最大值来确定下限和上限。