公开(公告)号：US20120014828A1

公开(公告)日：2012-01-19

申请号：US13258688

申请日：2010-05-25

申请人： Masafumi Miyazaki ,  Hideaki Yamamura ,  Takeshi Kubota ,  Yousuke Kurosaki ,  Kazuto Kawakami ,  Kazumi Mizukami ,  Takeaki Wakisaki

发明人： Masafumi Miyazaki ,  Hideaki Yamamura ,  Takeshi Kubota ,  Yousuke Kurosaki ,  Kazuto Kawakami ,  Kazumi Mizukami ,  Takeaki Wakisaki

IPC分类号： C22C38/02 ,  C22C38/14 ,  C22C38/04 ,  C22C38/34 ,  C22C38/38 ,  B22D27/00 ,  C22C38/00 ,  C22C38/60 ,  C22C38/08 ,  C22C38/16 ,  C22B9/00 ,  C22C38/06 ,  C22C38/28

CPC分类号： H01F1/14775 ,  B22D11/00 ,  B22D11/108 ,  C22C38/00 ,  C22C38/001 ,  C22C38/002 ,  C22C38/004 ,  C22C38/005 ,  C22C38/008 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/08 ,  C22C38/14 ,  C22C38/16 ,  C22C38/28 ,  C22C38/34 ,  C22C38/38 ,  C22C38/60 ,  H01F1/16

摘要： In a non-oriented electrical steel sheet, Si: not less than 1.0 mass % nor more than 3.5 mass %, Al: not less than 0.1 mass % nor more than 3.0 mass %, Ti: not less than 0.001 mass % nor more than 0.01 mass %, Bi: not less than 0.001 mass % nor more than 0.01 mass %, and so on are contained. (1) expression described below is satisfied when a Ti content (mass %) is represented as [Ti] and a Bi content (mass %) is represented as [Bi]. [Ti]≦0.8×[Bi]+0.002  (1)

摘要翻译： 在无取向电工钢板中，Si：1.0质量％以上3.5质量％以下，Al：0.1质量％以上3.0质量％以下，Ti：0.001质量％以上，不大于 0.01质量％，Bi：0.001质量％以上0.01质量％以下。 （1）当Ti含量（质量％）表示为[Ti]，Bi含量（质量％）表示为[Bi]时，满足下述表达式。 [Ti]＆nlE; 0.8×[Bi] +0.002（1）

公开(公告)号：US20110283944A1

公开(公告)日：2011-11-24

申请号：US13146463

申请日：2010-01-29

申请人： Yoshiaki Yoshimoto ,  Takeshi Kubota

发明人： Yoshiaki Yoshimoto ,  Takeshi Kubota

IPC分类号： C23C16/458

CPC分类号： C23C16/4588 ,  C04B41/009 ,  C04B41/5059 ,  C04B41/87 ,  C23C16/325 ,  C23C16/4404 ,  C23C16/4581 ,  C23C16/4585 ,  C23C16/4587 ,  H01L21/68707 ,  H01L21/68764 ,  H01L21/68771 ,  C04B35/52 ,  C04B41/4531

摘要： A CVD apparatus is provided, that can remarkably improve the quality and productivity of susceptors without causing increase in production cost or increase in size of the apparatus. A CVD apparatus is provided, for forming a SiC film on a surface of a carbonaceous substrate (5) by introducing a gas into the apparatus while the carbonaceous substrate (5) is being supported by a support member. The support member has a lower portion support member (6) on which the carbonaceous substrate (5) is to be placed, the lower portion support member supporting a lower portion of the carbonaceous substrate (5), and an upper portion support member (13) supporting an upper portion of the carbonaceous substrate (5). The upper portion support member (13) is provided at an outer peripheral edge of the carbonaceous substrate (5). The upper portion support member (13) has a V-shaped groove (13d). The carbonaceous substrate (5) is disposed with sufficient clearance in a carbonaceous substrate-accommodating space (17) formed by the V-shaped groove (13d).

摘要翻译： 提供了一种CVD装置，其可以显着地提高基座的质量和生产率，而不会导致生产成本的增加或装置的尺寸的增加。 提供一种CVD装置，用于通过在碳质基材（5）被支撑构件支撑的同时将气体引入装置中而在碳质基材（5）的表面上形成SiC膜。 支撑部件具有下部支撑部件（6），碳质基材（5）将被放置在该下部支撑部件（6）上，下部支撑部件支撑碳质基材（5）的下部，以及上部支撑部件（13） ）支撑碳质基底（5）的上部。 上部支撑构件（13）设置在碳质基材（5）的外周边缘处。 上部支撑构件（13）具有V形槽（13d）。 在由V形槽（13d）形成的碳质基板容纳空间（17）中，碳质基材（5）以足够的间隙设置。

公开(公告)号：US20110056592A1

公开(公告)日：2011-03-10

申请号：US12922772

申请日：2009-04-13

申请人： Yoshihiro Arita ,  Hidekuni Murakami ,  Yoshiyuki Ushigami ,  Takeshi Kubota

发明人： Yoshihiro Arita ,  Hidekuni Murakami ,  Yoshiyuki Ushigami ,  Takeshi Kubota

IPC分类号： C22C38/16 ,  C21D11/00

CPC分类号： H01F1/16 ,  C21D8/1222 ,  C21D8/1272 ,  C21D2201/05 ,  C21D2211/004 ,  C22C38/001 ,  C22C38/002 ,  C22C38/004 ,  C22C38/008 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/08 ,  C22C38/12 ,  C22C38/14 ,  C22C38/16 ,  H01F1/147

摘要： A high-strength non-oriented electrical steel sheet contains: by mass %, C: not less than 0.002% nor more than 0.05%; Si: not less than 2.0% nor more than 4.0%; Mn: not less than 0.05% nor more than 1.0%; N: not less than 0.002% nor more than 0.05%; and Cu: not less than 0.5% nor more than 3.0%. An Al content is 3.0% or less, and when a Nb content (%) is set to [Nb], a Zr content (%) is set to [Zr], a Ti content (%) is set to [Ti], a V content (%) is set to [V], a C content (%) is set to [C], and an N content (%) is set to [N], Formula (1) and Formula (2) are satisfied. A balance is composed of Fe and inevitable impurities, a recrystallization area ratio is 50% or more, yield stress at a tensile test is 700 MPa or more, fracture elongation is 10% or more, and an eddy current loss We10/400 (W/kg) satisfies Formula (3) in relation to a sheet thickness t (mm) of the steel sheet. 2.0×10−4≦[Nb]/93+[Zr]/91+[Ti]/48+[V]/51   (1) 1.0×10−3≦[C]/12+[N]/14−([Nb]/93+[Zr]/91+[Ti]/48+[V]/51)≦3.0×10−3   (2) We10/400≦70×t2   (3)

摘要翻译： 高强度无取向电工钢板，按质量％计，C：0.002％以上0.05％以下， Si：不小于2.0％，不大于4.0％; Mn：不小于0.05％，不大于1.0％; N：不小于0.002％，不大于0.05％; 和Cu：不小于0.5％，不大于3.0％。 Al含量为3.0％以下，Nb含量（％）为[Nb]时，将Zr含量（％）设定为[Zr]，将Ti含量（％）设定为[Ti] 将V含量（％）设定为[V]，将C含量（％）设定为[C]，将N含量（％）设定为[N]，式（1）和式（2） 满意。 余量由Fe和不可避免的杂质构成，再结晶面积率为50％以上，拉伸试验时的屈服应力为700MPa以上，断裂伸长率为10％以上，涡流损耗为We10 / 400（W / kg）相对于钢板的板厚t（mm）满足公式（3）。 2.0×10-4＆nlE; [Nb] / 93 + [Zr] / 91 + [Ti] / 48 + [V] / 51（1）1.0×10-3＆nlE; [C] / 12 + [N] （[Nb] / 93 + [Zr] / 91 + [Ti] / 48 + [V] / 51）＆nlE; 3.0×10-3（2）We10 / 400＆

公开(公告)号：US20090206453A1

公开(公告)日：2009-08-20

申请号：US11884358

申请日：2006-02-15

申请人： Nobutoshi Fujii ,  Kazuo Kohmura ,  Hidenori Miyoshi ,  Hirofumi Tanaka ,  Shunsuke Oike ,  Masami Murakami ,  Takeshi Kubota ,  Yoshito Kurano

发明人： Nobutoshi Fujii ,  Kazuo Kohmura ,  Hidenori Miyoshi ,  Hirofumi Tanaka ,  Shunsuke Oike ,  Masami Murakami ,  Takeshi Kubota ,  Yoshito Kurano

IPC分类号： H01L29/00 ,  B05D7/22 ,  B32B3/26

CPC分类号： H01L21/76826 ,  C01B33/12 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31608 ,  H01L21/31695 ,  Y10T428/249994

摘要： A hydrophobic compound having at least one each of hydrophobic group (an alkyl group having 1 to 6 carbon atoms or a —C6H5 group) and polymerizable group (a hydrogen atom, a hydroxyl group or a halogen atom) is allowed to undergo a gas-phase polymerization reaction, under reduced pressure (of not more than 30 kPa), in the presence of a raw porous silica film and to thus form a modified porous silica film wherein a hydrophobic polymer thin film is formed on the inner walls of holes present in the raw porous silica film. The resulting porous silica film has a low relative dielectric constant and a low refractive index and the silica film is likewise improved in the mechanical strength and hydrophobicity. A semiconductor device is produced using the porous silica film.

摘要翻译： 具有疏水性基团（具有1〜6个碳原子的烷基或-C 6 H 5基团）和可聚合基团（氢原子，羟基或卤素原子）中的至少一种的疏水化合物被允许进行气 - 在减压（不大于30kPa）的条件下，在原料多孔二氧化硅膜的存在下进行相聚合反应，从而形成改性多孔二氧化硅膜，其中在存在于孔中的孔的内壁上形成疏水性聚合物薄膜 原料多孔二氧化硅膜。 所得到的多孔二氧化硅膜的相对介电常数低，折射率低，二氧化硅膜的机械强度和疏水性同样提高。 使用多孔二氧化硅膜制造半导体器件。

公开(公告)号：USD585482S1

公开(公告)日：2009-01-27

申请号：US29298691

申请日：2007-12-11

申请人： Takeshi Kubota ,  Toru Oguma ,  Fumito Nonaka ,  Ryuta Murakami ,  Shunsuke Uratani ,  Takuya Kawakami ,  Shinichi Nishida

设计人： Takeshi Kubota ,  Toru Oguma ,  Fumito Nonaka ,  Ryuta Murakami ,  Shunsuke Uratani ,  Takuya Kawakami ,  Shinichi Nishida

公开(公告)号：US07291215B2

公开(公告)日：2007-11-06

申请号：US10554233

申请日：2004-04-26

申请人： Shunsuke Oike ,  Kazuo Kohmura ,  Masami Murakami ,  Takeshi Kubota

发明人： Shunsuke Oike ,  Kazuo Kohmura ,  Masami Murakami ,  Takeshi Kubota

IPC分类号： C09D183/02 ,  C01B33/12

CPC分类号： H01L21/02216 ,  C09D183/04 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31695

摘要： The coating liquid for forming porous silica according to the present invention is characterized by preferably containing a partial hydrolysis-condensation product of an alkoxysilane compound, a surfactant and an organic ampholyte, and by having a metal content of not more than 50 ppb. Conventional coating liquids for forming porous silica have such a problem that porous silica films formed therefrom may have poor regularity in micropore alignment when the shelf life of the coating liquids are long. On the contrary, the coating liquid for forming porous silica of the present invention is excellent in self-life stability. Namely, the quality of porous silica formed therefrom is hardly affected by the length of self-life period of the coating liquid. Consequently, the coating liquid is expected to contribute to the stable preparation of porous silica films which cause no shift in capacitance or voltage when exposed to an electric field, have regularly aligned uniform micropores, and are preferably used as an optically functional material or an electronically functional material.

摘要翻译： 根据本发明的用于形成多孔二氧化硅的涂布液的特征在于优选含有烷氧基硅烷化合物，表面活性剂和有机两性电解质的部分水解缩合产物，并且金属含量不超过50ppb。 用于形成多孔二氧化硅的常规涂布液具有这样的问题，即当涂布液的保质期长时，由其形成的多孔二氧化硅膜在微孔对准中的规则性差。 相反，本发明的多孔二氧化硅的形成用涂布液的自身寿命稳定性优异。 也就是说，由其形成的多孔二氧化硅的质量几乎不受涂布液的自身寿命期的影响。 因此，期望涂料液体有助于多孔二氧化硅膜的稳定制备，其在暴露于电场时不会发生电容或电压偏移，具有规则排列的均匀微孔，并且优选用作光学功能材料或电子 功能材料。

公开(公告)号：US07214277B2

公开(公告)日：2007-05-08

申请号：US10819939

申请日：2004-04-08

申请人： Yousuke Kurosaki ,  Takeshi Kubota ,  Hideaki Yamamura ,  Takashi Arai ,  Eiichiro Ishimaru ,  Yoshihiro Arita ,  Isao Suichi ,  Kenji Kosuge

发明人： Yousuke Kurosaki ,  Takeshi Kubota ,  Hideaki Yamamura ,  Takashi Arai ,  Eiichiro Ishimaru ,  Yoshihiro Arita ,  Isao Suichi ,  Kenji Kosuge

IPC分类号： H01F1/16 ,  H01F1/147

CPC分类号： C21D8/1233 ,  B22D11/06 ,  C21D8/1211 ,  C21D8/1272 ,  C21D8/1283

摘要： A quench solidification method, wherein a steel cast strip having a mean grain size 50 μm or more is prepared and then the steel cast strip is rolled to produce a non-oriented electrical steel sheet having high magnetic flux density in both L and C directions. However the magnetic flux density reduces when the cold reduction rate exceeds 70%. To avoid this problem the non-oriented electrical steel sheet is manufactured with a ratio of at least 4 of the integrated intensity of the {100} plane for a given sample of steel to the integrated intensity of {100} plane for a “random” sample in which crystal grains have random orientations; and a cold reduction rate of the cold-rolling is between 70% and 85%. The superheating degree of the molten steel can be 70° C. or more.

摘要翻译： 淬火固化方法，其中制备平均粒径为50μm或更大的钢铸钢带，然后轧制钢铸带，以在L和C方向上制造具有高磁通密度的无取向电工钢板。 然而，当冷压缩率超过70％时，磁通密度降低。 为了避免这个问题，对于给定的钢样品，{100}平面的积分强度至少为4的非取向电工钢板与“随机”的{100}平面的积分强度的比率制造， 晶粒具有随机取向的样品; 冷轧的冷轧速度为70％〜85％。 钢水的过热度可以为70℃以上。

公开(公告)号：US07148091B2

公开(公告)日：2006-12-12

申请号：US11196574

申请日：2005-08-04

申请人： Yasuyoshi Itoh ,  Takeshi Kubota ,  Toru Takeguchi

发明人： Yasuyoshi Itoh ,  Takeshi Kubota ,  Toru Takeguchi

IPC分类号： H01L21/00 ,  H01L21/336

CPC分类号： H01L29/78621 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78627

摘要： Impurity ions contained in a semiconductor layer are diffused downwardly from a gate electrode by irradiating laser light from the back surface of a transparent substrate after source-drain regions are formed. Thus, a GOLD structure is formed. Consequently, the GOLD structure is formed by performing a smaller number of processes. Also, variation in characteristics can be suppressed by preventing occurrence of asymmetry between left and right LDD regions.

公开(公告)号：US20060091388A1

公开(公告)日：2006-05-04

申请号：US11262934

申请日：2005-11-01

申请人： Takeshi Kubota

发明人： Takeshi Kubota

IPC分类号： G02F1/136 ,  H01L29/04

CPC分类号： H01L27/1285 ,  G09G3/20 ,  G09G2300/08 ,  G09G2310/0267 ,  G09G2320/0233 ,  G09G2330/028 ,  H01L27/1296

摘要： A display device including: a plurality of pixel lines each with a plurality of pixels; a pixel array consisting of said plurality of pixel lines; pixel transistors for driving said plurality of pixels; and a driving circuit for driving said plurality of pixel transistors, wherein: said plurality of pixel transistors include a plurality of predetermined pixel transistors; said driving circuit includes a first driving circuit for driving said predetermined pixel transistors, and a second driving circuit for driving other pixel transistors than said predetermined pixel transistors; and a difference in a threshold voltage among the respective predetermined pixel transistors ranges from 0.1 V to 0.5 V inclusive, and a difference in a threshold voltage between said predetermined pixel transistors and the other pixel transistors than said predetermined pixel transistors ranges from 0.5 V to 1.5 V inclusive.

摘要翻译： 一种显示装置，包括：具有多个像素的多个像素线; 由所述多个像素线组成的像素阵列; 用于驱动所述多个像素的像素晶体管; 以及用于驱动所述多个像素晶体管的驱动电路，其中：所述多个像素晶体管包括多个预定像素晶体管; 所述驱动电路包括用于驱动所述预定像素晶体管的第一驱动电路和用于驱动比所述预定像素晶体管的其它像素晶体管的第二驱动电路; 并且各个预定像素晶体管之间的阈值电压差在0.1V至0.5V的范围内，并且所述预定像素晶体管和所述其它像素晶体管之间的阈值电压差小于所述预定像素晶体管的范围为0.5V至1.5 V包括

公开(公告)号：US06918966B2

公开(公告)日：2005-07-19

申请号：US10288784

申请日：2002-11-06

申请人： Masahiro Fujikura ,  Satoshi Arai ,  Masato Mizokami ,  Hisashi Mogi ,  Takeshi Kubota

发明人： Masahiro Fujikura ,  Satoshi Arai ,  Masato Mizokami ,  Hisashi Mogi ,  Takeshi Kubota

IPC分类号： C21D8/12 ,  H01F1/147 ,  H01F1/16

CPC分类号： C21D8/1294 ,  B23K2103/04 ,  C21D8/1288 ,  H01F1/14775

摘要： The object of the present invention is to provide a low iron loss and low noise grain-oriented electrical steel sheet for securing both low core loss and low noise of a transformer at the same time.The present invention relates to a grain-oriented electrical steel sheet containing Si: 1.0-4.0 wt % produced by controlling, with regard to εO, which is defined as a 0-p value when a grain-oriented electrical steel sheet is magnetized up to a saturated magnetic flux density, and ε17, which is defined as the value obtained by subtracting a 0-p value at the magnetization magnetic flux density of 1.7 T from a 0-p value at a saturated magnetic flux density, εOC and ε17L, which are absolute values deviated by forming a tension film and a forsterite film, and εOL and ε17L, which are absolute values deviated by irradiating laser after the film formation, in adequate ranges respectively, and further controlling λ17, which is a 0-p value at the magnetization magnetic flux density of 1.7 T, in the most appropriate range, when measuring a 0-p value of magnetostriction vibration in the rolling direction.

摘要翻译： 本发明的目的是提供一种用于同时确保变压器的低铁损和低噪声的低铁损和低噪音晶粒取向电工钢板。 本发明涉及一种含有Si：1.0-4.0重量％的晶粒取向电工钢板，它是通过控制ε- 定向为电磁钢板达到饱和磁通密度，ε17被定义为通过从磁通密度减去1.7T的磁化磁通密度的0-p值而得到的值 饱和磁通密度为ε-0的p值为ε-1，其为通过形成张力膜和镁橄榄石膜而偏离的绝对值，ε