公开(公告)号：US08435727B2

公开(公告)日：2013-05-07

申请号：US12896036

申请日：2010-10-01

申请人： Ludovic Godet ,  Patrick M. Martin

发明人： Ludovic Godet ,  Patrick M. Martin

IPC分类号： G03F7/20

CPC分类号： C23C16/50 ,  G03F7/405 ,  G03F7/427 ,  G03F7/7045 ,  G03F7/70875 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/32422 ,  H01L21/0273

摘要： A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having a plasma sheath and ions therein. A shape of the boundary between the plasma and plasma sheath is modified using a plasma sheath modifier, so that a portion of the boundary facing the substrate is not parallel to a plane defined by the substrate. During a first exposure, the resist feature is exposed to electromagnetic radiation having a desired wavelength and the ions are accelerated across the boundary having the modified shape toward the resist features over an angular range.

摘要翻译： 降低设置在基板上的抗蚀剂特征的表面粗糙度的方法包括产生具有等离子体鞘和其中的离子的等离子体。 使用等离子体护套改性剂改变等离子体和等离子体护套之间的边界的形状，使得面对衬底的边界的一部分不平行于由衬底限定的平面。 在第一曝光期间，抗蚀剂特征暴露于具有所需波长的电磁辐射，并且离子在角度范围内被加速跨过具有改变形状的边界朝向抗蚀剂特征。

公开(公告)号：US20130062309A1

公开(公告)日：2013-03-14

申请号：US13228625

申请日：2011-09-09

申请人： Ludovic Godet ,  Patrick M. Martin ,  Joseph C. Olson ,  Andrew J. Hornak

发明人： Ludovic Godet ,  Patrick M. Martin ,  Joseph C. Olson ,  Andrew J. Hornak

IPC分类号： C23F1/02 ,  C23F1/08

CPC分类号： H01L21/0273 ,  G03F7/40 ,  H01J37/32422

摘要： A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises generating a plasma having a plasma sheath and ions therein. The method also includes modifying a shape of a boundary defined between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the boundary facing the resist material is not parallel to a plane defined by the surface of the substrate. The method also includes providing a first exposure of ions while the substrate is in a first position, the first exposure comprising ions accelerated across the boundary having the modified shape toward the resist material over an angular range with respect to the surface of the substrate.

摘要翻译： 一种降低设置在基板上的抗蚀剂材料的表面中的开口中的粗糙度的方法，包括产生具有等离子体鞘和其中的离子的等离子体。 该方法还包括使用等离子体护套改性剂修改限定在等离子体和等离子体护套之间的边界的形状，使得面向抗蚀剂材料的边界的一部分不平行于由衬底的表面限定的平面。 该方法还包括在衬底处于第一位置时提供离子的第一次曝光，该第一曝光包括在相对于衬底的表面的角度范围内跨过具有改变形状的边界加速离子的离子。

公开(公告)号：US20130045557A1

公开(公告)日：2013-02-21

申请号：US13587325

申请日：2012-08-16

申请人： Xianfeng Lu ,  Ludovic Godet ,  Christopher Hatem ,  John Hautala

发明人： Xianfeng Lu ,  Ludovic Godet ,  Christopher Hatem ,  John Hautala

IPC分类号： H01L21/22

CPC分类号： H01L35/34 ,  H01L35/22

摘要： An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In one embodiment, the thermoelectric material is made by depositing a porous film onto a substrate, introducing a dopant into the porous film and annealing the porous film to activate the dopant. In other embodiments, additional amounts of dopant may be introduced via subsequent ion implantations of dopant into the deposited porous film.

摘要翻译： 公开了一种制造具有高导电性和低热导率的热电材料的改进方法。 在一个实施例中，通过在衬底上沉积多孔膜，将掺杂剂引入到多孔膜中并退火多孔膜以激活掺杂剂来制造热电材料。 在其它实施方案中，可以通过随后的掺杂剂离子注入到沉积的多孔膜中引入附加量的掺杂剂。

公开(公告)号：US20130045339A1

公开(公告)日：2013-02-21

申请号：US13210122

申请日：2011-08-15

申请人： Ludovic Godet ,  Xianfeng Lu ,  Anthony Renau

发明人： Ludovic Godet ,  Xianfeng Lu ,  Anthony Renau

IPC分类号： H05H1/24 ,  C23C16/50 ,  B05C11/00

CPC分类号： C23C14/0611 ,  C23C14/042 ,  C23C14/221 ,  C23C14/54

摘要： Techniques for diamond nucleation control for thin film processing are disclosed. In one particular embodiment, the techniques may be realized as a method for generating a plasma having a plurality of ions; depositing a plurality of diamond nucleation centers on a substrate with the ions in the plasma using an extraction plate having at least one gap, wherein the plasma ions pass through the at least one gap in the extraction plate to generate a focused ion beam to deposit the plurality of diamond nucleation centers; and controlling the growth of a continuous diamond film from the diamond nucleation centers on the substrate by controlling at least one of a temperature around the substrate, a temperature of the plasma, a pressure around the substrate, and a concentration of the ions in the plasma.

公开(公告)号：US08372735B2

公开(公告)日：2013-02-12

申请号：US12339295

申请日：2008-12-19

申请人： Christopher Hatem ,  Ludovic Godet ,  Alexander Kontos

发明人： Christopher Hatem ,  Ludovic Godet ,  Alexander Kontos

IPC分类号： H01L21/26

CPC分类号： H01L21/26506 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/2658 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.

摘要翻译： 公开了一种使用氦来形成超浅结的方法。 使用氦的植入前非晶化具有显着的优点。 例如，已经表明，掺杂剂将仅渗透到非晶态界面的衬底，而不再进一步。 因此，通过适当地确定氦的注入能量，可以准确地确定结深度。 增加剂量的掺杂剂简单地降低了衬底电阻，对结深度没有影响。 此外，氦的横向is is与植入能量和氦PAI的剂量率有关，因此横向扩散也可以基于氦PAI的注入能量和剂量率来确定。 因此，可以将掺杂剂精确地注入到侧壁间隔物或其它障碍物的下方。

公开(公告)号：US20120263887A1

公开(公告)日：2012-10-18

申请号：US13085615

申请日：2011-04-13

申请人： George D. Papasouliotis ,  Ludovic Godet

发明人： George D. Papasouliotis ,  Ludovic Godet

IPC分类号： C23C16/50 ,  C23C16/52 ,  C23C16/46 ,  C23C16/02 ,  C23C16/44 ,  C23C16/458

CPC分类号： C23C16/45542 ,  C23C16/45551

摘要： An apparatus for depositing a coating may comprise a first processing chamber configured to deposit a first reactant as a reactant layer on a substrate during a first time period. A second processing chamber may be configured to direct ions incident on the substrate at a second time and configured to deposit a second reactant on the substrate during a second time period, wherein the second reactant is configured to react with the reactant layer.

摘要翻译： 用于沉积涂层的装置可以包括第一处理室，其被配置为在第一时间段期间将作为反应物层的第一反应物沉积在基板上。 第二处理室可以被配置为在第二时间引导入射在衬底上的离子，并且被配置为在第二时间段期间在衬底上沉积第二反应物，其中第二反应物构造成与反应物层反应。

公开(公告)号：US20120175518A1

公开(公告)日：2012-07-12

申请号：US12987950

申请日：2011-01-10

申请人： Ludovic Godet ,  Christopher J. Leavitt ,  Bon-Woong Koo ,  Anthony Renau

发明人： Ludovic Godet ,  Christopher J. Leavitt ,  Bon-Woong Koo ,  Anthony Renau

IPC分类号： H01J49/00

CPC分类号： H01J49/40 ,  H01J37/244 ,  H01J37/3171 ,  H01J37/32935 ,  H01J49/04 ,  H01J2237/24528 ,  H01J2237/24542

摘要： A time-of-flight (TOF) ion sensor system for monitoring an angular distribution of ion species having an ion energy and incident on a substrate includes a drift tube wherein the ion sensor system is configured to vary an angle of the drift tube with respect to a plane of the substrate. The drift tube may have a first end configured to receive a pulse of ions from the ion species wherein heavier ions and lighter ions of the pulse of ions arrive in packets at a second end of the drift tube. An ion detector may be disposed at the second end of the ion sensor, wherein the ion detector is configured to detect the packets of ions derived from the pulse of ions and corresponding to respective different ion masses.

摘要翻译： 用于监测具有离子能并入射在衬底上的离子种类的角分布的飞行时间（TOF）离子传感器系统包括漂移管，其中离子传感器系统被配置为相对于漂移管的角度改变 到基板的平面。 漂移管可以具有构造成从离子物质接收离子脉冲的第一端，其中离子脉冲的较重离子和较轻离子在漂移管的第二端处分组到达。 离子检测器可以设置在离子传感器的第二端处，其中离子检测器被配置为检测源自离子脉冲的离子的分组并且对应于各个不同的离子质量。

公开(公告)号：US20100041218A1

公开(公告)日：2010-02-18

申请号：US12339295

申请日：2008-12-19

申请人： Christopher Hatem ,  Ludovic Godet ,  Alexander Kontos

发明人： Christopher Hatem ,  Ludovic Godet ,  Alexander Kontos

IPC分类号： H01L21/266

CPC分类号： H01L21/26506 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/2658 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.

摘要翻译： 公开了一种使用氦来形成超浅结的方法。 使用氦的植入前非晶化具有显着的优点。 例如，已经表明，掺杂剂将仅渗透到非晶态界面的衬底，而不再进一步。 因此，通过适当地确定氦的注入能量，可以准确地确定结深度。 增加剂量的掺杂剂简单地降低了衬底电阻，对结深度没有影响。 此外，氦的横向is is与植入能量和氦PAI的剂量率有关，因此横向扩散也可以基于氦PAI的注入能量和剂量率来确定。 因此，可以将掺杂剂精确地注入到侧壁间隔物或其它障碍物的下方。

公开(公告)号：US20090227096A1

公开(公告)日：2009-09-10

申请号：US12044619

申请日：2008-03-07

申请人： Ludovic Godet ,  George D. Papasouliotis

发明人： Ludovic Godet ,  George D. Papasouliotis

IPC分类号： H01L21/265

CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/2658

摘要： A method of forming a retrograde material profile in a substrate includes forming a surface peak profile on the substrate. Ions are then implanted into the substrate to form a retrograde profile from the surface peak profile, at least one of an ion implantation dose and an ion implantation energy of the implanted ions being chosen so that the retrograde profile has a peak concentration that is positioned at a desired distance from the surface of the substrate.

摘要翻译： 在衬底中形成逆行材料轮廓的方法包括在衬底上形成表面峰分布。 然后将离子注入到衬底中以从表面峰曲线形成逆行曲线，选择注入离子的离子注入剂量和离子注入能量中的至少一种，使得逆行曲线具有位于 距离衬底表面的期望距离。

公开(公告)号：US20090124066A1

公开(公告)日：2009-05-14

申请号：US12269344

申请日：2008-11-12

申请人： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

发明人： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

IPC分类号： H01L21/20

CPC分类号： H01L21/02689 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/268 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.