公开(公告)号：US20190033913A1

公开(公告)日：2019-01-31

申请号：US16139134

申请日：2018-09-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki KUWABARA ,  Masaaki HIROKI

IPC: G06F1/16

Abstract: A novel electronic device is provided. Alternatively an electronic device of a novel embodiment is provided. An electronic device includes a ring portion and a display portion. The display portion is flexible. The display portion has a top surface and a first side surface in contact with at least one side of the top surface. The first side surface has a curved surface. The top surface includes a first display region. The first side surface includes a second display region. The first display region and the second display region are continuously provided. The electronic device is mounted such that the ring portion is in contact with a user's finger.

公开(公告)号：US20160358941A1

公开(公告)日：2016-12-08

申请号：US15178919

申请日：2016-06-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideaki KUWABARA ,  Yasuyuki ARAI

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/1343 ,  G02F1/1339 ,  G02F1/1345 ,  H01L29/66 ,  G02F1/1362

CPC classification number: H01L27/1222 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/13452 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2202/103 ,  G02F2202/105 ,  G02F2202/28 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67225 ,  H01L21/67236 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

Abstract: [Summary][Problem]A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.[Solving Means]By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.

Abstract translation: 通过在三个光刻步骤中通过使用三个光掩模来执行像素电极127，源极区域123和漏极区域124的形成，制备具有反向交错型n沟道TFT的像素TFT部分的液晶显示装置， 并且可以实现存储电容器。

公开(公告)号：US20160094079A1

公开(公告)日：2016-03-31

申请号：US14862307

申请日：2015-09-23

Applicant: Semiconductor Energy Laboratory Co., LTD.

Inventor： Masaaki HIROKI ,  Junpei MOMO ,  Hideaki KUWABARA

IPC: H02J7/02 ,  H02J7/35 ,  H02J7/04 ,  H02J7/00

CPC classification number: H02J7/025 ,  H01M2/1022 ,  H02J7/0042 ,  H02J7/0047 ,  H02J7/0054 ,  H02J7/34 ,  H02J7/35 ,  H02J13/0075 ,  H02J50/10 ,  H02J50/12 ,  H02J2007/0096 ,  Y02E40/72 ,  Y04S10/123

Abstract: A secondary battery module capable of feeding power to a wearable device in a non-contact manner is provided. A power feeding system for an electronic device is provided. The power feeding system includes a secondary battery module and an electronic device. The secondary battery module includes a flexible secondary battery, a power sending portion for non-contact power transmission, a flexible thermoelectric power generating device, and a belt portion storing the flexible secondary battery and the flexible thermoelectric power generating device. The electronic device includes a power receiving portion for non-contact power transmission and is capable of power transmission from the power sending portion for non-contact power transmission which is included in the secondary battery module to the power receiving portion for non-contact power transmission which is included in the electronic device.

Abstract translation: 提供能够以非接触方式向可穿戴装置供电的二次电池模块。 提供了一种用于电子设备的馈电系统。 供电系统包括二次电池模块和电子设备。 二次电池模块包括柔性二次电池，用于非接触式电力传输的发电部，柔性热电发电装置和存储柔性二次电池和柔性热电发电装置的带部。 电子设备包括用于非接触式电力传输的电力接收部分，并且能够将包括在二次电池模块中的用于非接触电力传输的发送部分的电力传输到用于非接触电力传输的电力接收部分 其被包括在电子设备中。

公开(公告)号：US20150357352A1

公开(公告)日：2015-12-10

申请号：US14737672

申请日：2015-06-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideaki KUWABARA ,  Yasuyuki ARAI

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1362 ,  H01L29/786 ,  G02F1/1368

CPC classification number: H01L27/1222 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/13452 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2202/103 ,  G02F2202/105 ,  G02F2202/28 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67225 ,  H01L21/67236 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

Abstract: A TFT is manufactured using at least five photomasks in a conventional liquid s crystal display device, and therefore the manufacturing cost is high.[Solving Means]By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel ITT, and a storage capacitor can be realized,

Abstract translation: 在传统的液晶显示装置中使用至少五个光掩模制造TFT，因此制造成本高。 [解决方案]通过在三个光刻步骤中使用三个光掩模来执行像素电极127，源极区域123和漏极区域124的形成，制备具有反向交错型n型的像素TFT部分的液晶显示装置 通道ITT和存储电容器可以实现，

公开(公告)号：US20150214283A1

公开(公告)日：2015-07-30

申请号：US14679357

申请日：2015-04-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Satoshi SEO ,  Hideaki KUWABARA

IPC: H01L27/32

CPC classification number: H01L51/5209 ,  G01J1/4228 ,  H01L25/167 ,  H01L27/3206 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L33/0041 ,  H01L51/0096 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5221 ,  H01L51/5234 ,  H01L51/524 ,  H01L51/5271 ,  H01L51/529 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5315

Abstract: A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.

Abstract translation: 在半导体基板上形成FET，在绝缘体的上端形成具有曲率半径的曲面，第一电极的一部分相对于曲面露出，形成倾斜面， 对发光区域进行蚀刻以暴露第一电极。 从有机化合物层发出的发光由第一电极的倾斜表面反射，以增加沿某一方向取出的发光总量。

公开(公告)号：US20150194445A1

公开(公告)日：2015-07-09

申请号：US14658955

申请日：2015-03-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA

IPC: H01L27/12

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L29/45

Abstract: A highly reliable display device which has high aperture ratio and includes a transistor with stable electrical characteristics is manufactured. The display device includes a driver circuit portion and a display portion over the same substrate. The driver circuit portion includes a driver circuit transistor and a driver circuit wiring. A source electrode and a drain electrode of the driver circuit transistor are formed using a metal. A channel layer of the driver circuit transistor is formed using an oxide semiconductor. The driver circuit wiring is formed using a metal. The display portion includes a pixel transistor and a display portion wiring. A source electrode and a drain electrode of the pixel transistor are formed using a transparent oxide conductor. A semiconductor layer of the pixel transistor is formed using the oxide semiconductor. The display portion wiring is formed using a transparent oxide conductor.

Abstract translation: 制造具有高开口率并且包括具有稳定电特性的晶体管的高度可靠的显示装置。 显示装置包括在同一基板上的驱动电路部分和显示部分。 驱动器电路部分包括驱动电路晶体管和驱动电路布线。 使用金属形成驱动电路晶体管的源电极和漏电极。 使用氧化物半导体形成驱动电路晶体管的沟道层。 驱动电路布线使用金属形成。 显示部分包括像素晶体管和显示部分布线。 使用透明氧化物导体形成像素晶体管的源电极和漏电极。 使用氧化物半导体形成像素晶体管的半导体层。 显示部分布线使用透明氧化物导体形成。

公开(公告)号：US20140347490A1

公开(公告)日：2014-11-27

申请号：US14457140

申请日：2014-08-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toru TAKAYAMA ,  Junya MARUYAMA ,  Yuugo GOTO ,  Hideaki KUWABARA ,  Shunpei YAMAZAKI

IPC: B60R1/00 ,  B60R11/02 ,  B60R11/04

CPC classification number: H01L27/1266 ,  B60R1/00 ,  B60R11/0229 ,  B60R11/04 ,  B60R2011/004 ,  B60R2300/202 ,  B60R2300/802 ,  H01L21/6835 ,  H01L21/76251 ,  H01L27/1218 ,  H01L27/3244 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68386 ,  H01L2227/323 ,  H01L2227/326

Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.

Abstract translation: 为了提供其中将要剥离的层附着到具有曲面的基底的半导体器件及其制造方法，更具体地，涉及具有弯曲表面的显示器，更具体地说，具有如下的发光器件，其具有 附着到具有弯曲表面的基部的发光元件。 将包含使用层叠金属层或氮化物层的第一材料层的层叠体和作为氧化物层的第二材料层而设置在基板上的发光元件的剥离层转印到膜上， 然后将膜和要剥离的层弯曲，从而产生具有弯曲表面的显示器。

公开(公告)号：US20140339552A1

公开(公告)日：2014-11-20

申请号：US14448024

申请日：2014-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinya SASAGAWA ,  Motomu KURATA ,  Hideaki KUWABARA ,  Mari TERASHIMA

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/41758 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78696

Abstract: To provide a highly reliable semiconductor device including a transistor using an oxide semiconductor. After a source electrode layer and a drain electrode layer are formed, an island-like oxide semiconductor layer is formed in a gap between these electrode layers so that a side surface of the oxide semiconductor layer is covered with a wiring, whereby light is prevented from entering the oxide semiconductor layer through the side surface. Further, a gate electrode layer is formed over the oxide semiconductor layer with a gate insulating layer interposed therebetween and impurities are introduced with the gate electrode layer used as a mask. Then, a conductive layer is provided on a side surface of the gate electrode layer in the channel length direction, whereby an Lov region is formed while maintaining a scaled-down channel length and entry of light from above into the oxide semiconductor layer is prevented.

Abstract translation: 提供包括使用氧化物半导体的晶体管的高度可靠的半导体器件。 在形成源电极层和漏电极层之后，在这些电极层之间的间隙中形成岛状氧化物半导体层，使得氧化物半导体层的侧表面被布线覆盖，从而防止光 通过侧面进入氧化物半导体层。 此外，在氧化物半导体层上形成栅极电极层，其间插入有栅极绝缘层，并且将杂质与用作掩模的栅极电极层一起引入。 然后，在栅极电极层的沟道长度方向的侧面上设置导电层，由此形成Lov区，同时保持按比例缩小的沟道长度，防止从上方入射到氧化物半导体层中的光。

公开(公告)号：US20140203683A1

公开(公告)日：2014-07-24

申请号：US14220373

申请日：2014-03-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki KUWABARA

IPC: H01L41/04 ,  H01L41/09

CPC classification number: A63B60/46 ,  A63B43/06 ,  A63B59/00 ,  A63B69/00 ,  A63B2102/02 ,  A63B2102/06 ,  A63B2207/02 ,  A63B2209/14 ,  A63B2243/0025 ,  H01L27/20 ,  H01L41/042 ,  H01L41/09

Abstract: The present invention provides a sports implement whose characteristics a user can adjust freely and minutely. According to the present invention, it is realized that a light-weight high functional circuit is installed in various sports implements by constituting various functional circuits with a TFT formed on a film, without using a printed board. A high functional circuit using a TFT formed over a flexible plastic film is light-weight and strong in bending and impacts. It is possible to provide a sports implement that is favorable in operationality and friendly to many users in a wide range regardless of the muscle strength or physical constitution and the like of a user, since the user can adjust characteristics of a sports implement.

Abstract translation: 本发明提供了一种运动器具，其特点是使用者可以自由调节地进行调节。 根据本发明，通过在不使用印刷电路板的情况下，通过构成具有形成在膜上的TFT的各种功能电路，实现了在各种运动器具中安装轻量级的高功能电路。 使用在柔性塑料薄膜上形成的TFT的高功能电路重量轻，弯曲和冲击强。 无论用户的肌肉力量或身体构成等如何，都可以提供一种运动效果良好且对许多用户友好的运动器具，因为用户可以调节运动器具的特性。

公开(公告)号：US20140061613A1

公开(公告)日：2014-03-06

申请号：US13975860

申请日：2013-08-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Satoshi SEO ,  Hideaki KUWABARA

IPC: H01L27/32

CPC classification number: H01L27/3206 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3276 ,  H01L51/5209 ,  H01L51/5218 ,  H01L51/5221 ,  H01L51/5228 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5271 ,  H01L2251/5315

Abstract: A light-emitting device structured so as to increase the amount of light taken out in a certain direction is provided as well as a method of manufacturing this light emitting device. As a result of etching treatment, an upper edge portion of an insulator (19) is curved to have a radius of curvature, a slope is formed along the curved face while partially exposing layers (18c and 18d) of a first electrode, and a layer (18b) of the first electrode is exposed in a region that serves as a light emitting region. Light emitted from an organic compound layer (20) is reflected by the slope of the first electrode (layers 18c and 18d) to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.

Abstract translation: 提供了一种构造为增加沿一定方向取出的光量的发光器件以及制造该发光器件的方法。 作为蚀刻处理的结果，绝缘体（19）的上边缘部分被弯曲成具有曲率半径，沿着弯曲面形成斜面，同时部分地暴露第一电极的层（18c和18d），并且 第一电极的层（18b）暴露在用作发光区域的区域中。 从有机化合物层（20）发射的光被第一电极（层18c和18d）的斜率反射，以增加沿图1中箭头所示方向取出的光的总量。 1A。