公开(公告)号：US10170599B2

公开(公告)日：2019-01-01

申请号：US15147105

申请日：2016-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi ,  Shunpei Yamazaki ,  Toshinari Sasaki

IPC: H01L29/78 ,  H01L21/16 ,  H01L21/00 ,  H01L29/24 ,  H01L21/47 ,  H01L29/66 ,  H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L21/4757

Abstract: In a semiconductor device including an oxide semiconductor, the amount of oxygen vacancies is reduced. Moreover, electrical characteristics of a semiconductor device including an oxide semiconductor are improved. The semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the oxide semiconductor film; and over the transistor, a first insulating film covering the gate insulating film, the oxide semiconductor film, and the pair of electrodes; and a second insulating film covering the first insulating film. An etching rate of the first insulating film is lower than or equal to 10 nm/min and lower than an etching rate of the second insulating film when etching is performed at 25° C. with 0.5 weight % of hydrofluoric acid.

公开(公告)号：US10115631B2

公开(公告)日：2018-10-30

申请号：US15608539

申请日：2017-05-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masahiro Katayama

IPC: H01L27/12 ,  H01L21/768 ,  H01L23/522 ,  H01L23/373 ,  H01L23/528 ,  H01L27/115

Abstract: A semiconductor device provided with a plurality of kinds of transistors with different device structures suitable for functions of circuits is provided. The semiconductor device includes first to third transistors with different device structures over one substrate. A semiconductor layer of the first transistor is an oxide semiconductor film with a stacked-layer structure, and a semiconductor layer of each of the second and third transistors is an oxide semiconductor film with a single-layer structure. Each of the first and second transistors includes a back gate electrode connected to its gate electrode.

公开(公告)号：US10101625B2

公开(公告)日：2018-10-16

申请号：US15012092

申请日：2016-02-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Yukinori Shima ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/136 ,  G02F1/1368 ,  G02F1/1333 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/1335 ,  G02F1/1337

Abstract: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.

公开(公告)号：US10095362B2

公开(公告)日：2018-10-09

申请号：US15076950

申请日：2016-03-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiharu Hirakata ,  Daisuke Kubota ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G06F3/044

Abstract: A lightweight touch panel is provided. A display panel includes first and second substrates, between which a liquid crystal layer is provided. The first substrate is provided with a pixel electrode, a common electrode, a transistor, and the like of a liquid crystal panel. The second substrate is provided with a touch sensor. The touch sensor includes a first electrode, two second electrodes, a third electrode, and a fourth electrode. The first electrode and the two second electrodes are formed using a first conductive film. The third and fourth electrodes are formed using a second conductive film. The first electrode extends in a first direction. The two second electrodes are provided along a second direction with the first electrode therebetween. The third electrode electrically connects the two second electrodes to each other. The fourth electrode faces the pixel electrode and the common electrode with the liquid crystal layer therebetween.

公开(公告)号：US10014414B2

公开(公告)日：2018-07-03

申请号：US14190874

申请日：2014-02-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Tokunaga ,  Takuya Handa ,  Kenichi Okazaki

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66742 ,  H01L29/66969

Abstract: A transistor or the like having high field-effect mobility is provided. A transistor or the like having stable electrical characteristics is provided. A semiconductor device including a first oxide semiconductor layer, a second oxide semiconductor layer, a gate insulating film, and a gate electrode which partly overlap with one another is provided. The second oxide semiconductor layer is positioned between the first oxide semiconductor layer and the gate insulating film. The gate insulating film is positioned between the second oxide semiconductor layer and the gate electrode. The first oxide semiconductor layer has fewer oxygen vacancies than those of the second oxide semiconductor layer.

公开(公告)号：US09960190B2

公开(公告)日：2018-05-01

申请号：US15464534

申请日：2017-03-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yukinori Shima ,  Shinpei Matsuda ,  Haruyuki Baba ,  Ryunosuke Honda

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/778 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L27/127 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/7869 ,  H01L29/78696

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US09887299B2

公开(公告)日：2018-02-06

申请号：US15279513

申请日：2016-09-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Katayama ,  Kenichi Okazaki ,  Jun Koyama

IPC: H03B1/00 ,  H03K3/00 ,  H01L29/786 ,  H01L29/26 ,  H03K19/096 ,  H03K3/356 ,  H03K3/037 ,  H03K5/15 ,  H03K19/0944 ,  H01L27/12 ,  G11C19/28 ,  H01L29/417 ,  H01L29/45

CPC classification number: H01L29/7869 ,  G11C19/28 ,  H01L27/1225 ,  H01L29/26 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78648 ,  H01L29/78696 ,  H03K3/037 ,  H03K3/356121 ,  H03K5/15093 ,  H03K19/09443 ,  H03K19/096

Abstract: A transistor with excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) is provided. The transistor includes an oxide semiconductor layer including a channel formation region, a first gate electrode, a second gate electrode, a source electrode, and a drain electrode. The oxide semiconductor layer is between the first gate electrode and the second gate electrode. The oxide semiconductor layer has a pair of side surfaces in contact with the source electrode and the drain electrode and includes a region surrounded by the first gate electrode and the second gate electrode without the source electrode and the drain electrode interposed therebetween.

公开(公告)号：US09865746B2

公开(公告)日：2018-01-09

申请号：US15071723

申请日：2016-03-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Tokunaga ,  Junichi Koezuka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/22 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L29/22 ,  H01L29/247 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693

Abstract: A highly reliable semiconductor device having stable electrical characteristics is provided. Oxide films each containing one or more kinds of metal elements included in an oxide semiconductor film are formed in contact with an upper side and a lower side of the oxide semiconductor film where a channel is formed, whereby interface states are not easily generated at an upper interface and a lower interface of the oxide semiconductor film. A material which has a lower electron affinity than the oxide semiconductor film is used for the oxide films in contact with the oxide semiconductor film, whereby electrons flowing in the channel hardly move in the oxide films and mainly move in the oxide semiconductor film. Thus, even when an interface state exists between the oxide film and an insulating film formed on the outside of the oxide film, the state hardly influences the movement of electrons.

公开(公告)号：US09837512B2

公开(公告)日：2017-12-05

申请号：US15340031

申请日：2016-11-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Kenichi Okazaki ,  Daisuke Kurosaki ,  Yukinori Shima ,  Yasuharu Hosaka

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: The transistor includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film includes a first region in which an atomic proportion of In is larger than that of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf). The second oxide semiconductor film includes a second region in which an atomic proportion of In is smaller than that of the first oxide semiconductor film. The second region includes a portion thinner than the first region.

公开(公告)号：US09799290B2

公开(公告)日：2017-10-24

申请号：US14978390

申请日：2015-12-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masahiro Watanabe ,  Takuya Handa

IPC: G09G3/36 ,  G09G3/32 ,  H01L27/12 ,  G09G3/3225

CPC classification number: G09G3/3648 ,  G09G3/3225 ,  G09G2300/0439 ,  G09G2310/08 ,  H01L27/1225 ,  H01L27/124

Abstract: A highly reliable semiconductor device that includes a transistor including an oxide semiconductor, which can display a high-definition image and can be manufactured with a high yield. The semiconductor device includes a pixel portion including a plurality of pixels, a gate signal line driver circuit portion, and a source signal line driver circuit portion including a first circuit that controls timing of sampling video signals and a second circuit that samples the video signals in accordance with the timing and then inputs the sampled video signals to the pixels. The second circuit includes a plurality of transistors in each of which an oxide semiconductor stacked layer is used as a channel formation region, the first circuit and the second circuit are electrically connected to each other by a wiring, and the wiring is electrically connected to gates of at least two transistors of the plurality of transistors.