公开(公告)号：US10998448B2

公开(公告)日：2021-05-04

申请号：US16776856

申请日：2020-01-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Daisuke Kurosaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is inhibited and reliability is improved. The transistor includes a first gate electrode; a first insulating film over the first gate electrode; an oxide semiconductor film over the first insulating film; a source electrode electrically connected to the oxide semiconductor film; a drain electrode electrically connected to the oxide semiconductor film; a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and a second gate electrode over the second insulating film. The second insulating film includes oxygen. The second gate electrode includes the same metal element as at least one of metal elements of the oxide semiconductor film and has a region thinner than the oxide semiconductor film.

公开(公告)号：US10692994B2

公开(公告)日：2020-06-23

申请号：US15846657

申请日：2017-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Takahiro Iguchi ,  Masami Jintyou ,  Takashi Hamochi ,  Junichi Koezuka

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/786 ,  H01L21/4757 ,  H01L21/4763 ,  H01L21/385 ,  H01L21/02 ,  H01L29/49

Abstract: To provide a semiconductor device with favorable electrical characteristics. To provide a method for manufacturing a semiconductor device with high productivity. To reduce the temperatures in a manufacturing process of a semiconductor device. An island-like oxide semiconductor layer is formed over a first insulating film; a second insulating film and a first conductive film are formed in this order, covering the oxide semiconductor layer; oxygen is supplied to the second insulating film through the first conductive film; a metal oxide film is formed over the second insulating film in an atmosphere containing oxygen; a first gate electrode is formed by processing the metal oxide film; a third insulating film is formed, covering the first gate electrode and the second insulating film; and first heat treatment is performed. The second insulating film and the third insulating film each include oxide. The highest temperature in the above steps is 340° C. or lower.

公开(公告)号：US10559697B2

公开(公告)日：2020-02-11

申请号：US15775960

申请日：2016-11-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki Oikawa ,  Nobuharu Ohsawa ,  Masami Jintyou ,  Yasutaka Nakazawa

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/28 ,  H01L29/04 ,  H01L29/45

Abstract: The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a source electrode over the oxide semiconductor film, a drain electrode over the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a second gate electrode over the second insulating film. The first insulating film includes a first opening. A connection electrode electrically connected to the first gate electrode through the first opening is formed over the first insulating film. The second insulating film includes a second opening that reaches the connection electrode. The second gate electrode includes an oxide conductive film and a metal film over the oxide conductive film. The connection electrode and the second gate electrode are electrically connected to each other through the metal film.

公开(公告)号：US20190189466A1

公开(公告)日：2019-06-20

申请号：US16270624

申请日：2019-02-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masami Jintyou ,  Junichi Koezuka ,  Takashi Hamochi ,  Yasuharu Hosaka

IPC: H01L21/385 ,  H01L21/02 ,  H01L21/44 ,  H01L21/443 ,  H01L29/786 ,  H01L29/04 ,  H01L29/49 ,  H01L29/66 ,  H01L21/4757

CPC classification number: H01L21/385 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/0234 ,  H01L21/44 ,  H01L21/443 ,  H01L21/4757 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

公开(公告)号：US10290656B2

公开(公告)日：2019-05-14

申请号：US14721362

申请日：2015-05-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Daisuke Kurosaki ,  Yukinori Shima ,  Toshimitsu Obonai

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L21/04 ,  H01L21/26

Abstract: Provided is a transistor which includes an oxide semiconductor film in a channel region. A change from a shift value before light irradiation to a shift value under light irradiation is greater than or equal to −1 V and less than or equal to 0.5 V, where the shift value is a gate voltage at a point of intersection of an axis of 1×10−12 A and a steepest tangent line of the logarithm of a drain current in drain current-gate voltage characteristics of the transistor, and where the light irradiation is performed on the oxide semiconductor film with light having an energy greater than or equal to a band gap of the oxide semiconductor film.

公开(公告)号：US10134781B2

公开(公告)日：2018-11-20

申请号：US14462994

申请日：2014-08-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masahiro Katayama ,  Masami Jintyou

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/94

Abstract: A semiconductor device has an insulating surface provided with a transistor and a capacitor. The transistor includes a gate electrode, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film between the gate electrode and the oxide semiconductor film, and a first conductive film serving as a pair of electrodes in contact with the oxide semiconductor film. An oxide insulating film in contact with the oxide semiconductor film, a metal oxide film over the oxide insulating film, and a second conductive film serving as a pixel electrode which is in an opening in the metal oxide film and is in contact with the first conductive film are provided. The capacitor includes a film having conductivity over the gate insulating film, the second conductive film, and the metal oxide film provided between the film having conductivity and the second conductive film.

公开(公告)号：US10096684B2

公开(公告)日：2018-10-09

申请号：US15391186

申请日：2016-12-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Takashi Hamochi ,  Junichi Koezuka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: H01L29/24 ,  C04B35/453 ,  C04B35/622 ,  H01L29/786 ,  C03C17/245 ,  C04B35/01 ,  C23C14/08 ,  C23C14/58

Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

公开(公告)号：US10056492B2

公开(公告)日：2018-08-21

申请号：US15597297

申请日：2017-05-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Daisuke Kurosaki

IPC: H01L29/786 ,  H01L29/26 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: A semiconductor device including a transistor is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, a second insulating film over the first insulating film, an oxide semiconductor film over the second insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film, a third insulating film over the source electrode, and a fourth insulating film over the drain electrode. A fifth insulating film including oxygen is provided over the transistor. The third insulating film includes a first portion, the fourth insulating film includes a second portion, and the fifth insulating film includes a third portion. The amount of oxygen molecules released from each of the first portion and the second portion is smaller than the amount of oxygen molecules released from the third portion when the amounts are measured by thermal desorption spectroscopy.

公开(公告)号：US09923097B2

公开(公告)日：2018-03-20

申请号：US14558857

申请日：2014-12-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L29/78606 ,  H01L29/045 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

Abstract: A semiconductor device includes an oxide semiconductor film, a gate electrode overlapping the oxide semiconductor film with a gate insulating film therebetween, a nitride insulating film in contact with the oxide semiconductor film, and a conductive film in contact with the oxide semiconductor film. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the conductive film. The second region contains an impurity element. The impurity element concentration of the second region is different from that of the first region.

公开(公告)号：US09847358B2

公开(公告)日：2017-12-19

申请号：US15346173

申请日：2016-11-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Daisuke Kurosaki ,  Masataka Nakada ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.