公开(公告)号：US20180040722A1

公开(公告)日：2018-02-08

申请号：US15664353

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshimitsu OBONAI ,  Hironobu TAKAHASHI ,  Yasuharu HOSAKA ,  Masahiro WATANABE ,  Takuya HANDA ,  Yukinori SHIMA ,  Takashi HAMOCHI

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02359 ,  H01L21/02554 ,  H01L21/02631 ,  H01L21/6719 ,  H01L29/78648 ,  H01L29/7869

Abstract: Provided is a semiconductor device with favorable electrical characteristics. Provided is a semiconductor device with stable electrical characteristics. Provided is a manufacturing method of a semiconductor device with a high yield. The manufacturing method includes a first step of forming an insulating film over a substrate, a second step of transferring the substrate in an atmospheric atmosphere, a third step of heating the insulating film, and a fourth step of forming a metal oxide film. The third step and the fourth step are successively performed in an atmosphere where water vapor partial pressure is lower than water vapor partial pressure in the atmospheric air.

公开(公告)号：US20170373196A1

公开(公告)日：2017-12-28

申请号：US15683845

申请日：2017-08-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  H01L29/66 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: The reliability of a transistor including an oxide semiconductor is improved. The transistor in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region overlapping with the second oxide semiconductor film, a source region and a drain region each in contact with the second insulating film. The channel region includes a first layer and a second layer in contact with a top surface of the first layer and covering a side surface of the first layer in the channel width direction. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.

公开(公告)号：US20170338353A1

公开(公告)日：2017-11-23

申请号：US15661040

申请日：2017-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  H01L29/45 ,  H01L29/417 ,  H01L29/49 ,  H01L29/66 ,  H01L27/32

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/7869 ,  H01L2029/7863

Abstract: A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations. The gate electrode, the source electrode, and the drain electrode contain the same metal element.

公开(公告)号：US20170338315A1

公开(公告)日：2017-11-23

申请号：US15592712

申请日：2017-05-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H01L29/24 ,  H01L29/06 ,  H01L29/10 ,  H01L29/786

CPC classification number: H01L29/24 ,  H01L29/0692 ,  H01L29/1037 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A novel material is provided. A composite oxide semiconductor includes a first region and a second region. The first region contains indium. The second region contains an element M (the element M is one or more of Ga, Al, Hf, Y, and Sn). The first region and the second region are arranged in a mosaic pattern. The composite oxide semiconductor further includes a third region. The element M is gallium. The first region contains indium oxide or indium zinc oxide. The second region contains gallium oxide or gallium zinc oxide. The third region contains zinc oxide.

公开(公告)号：US20170317151A1

公开(公告)日：2017-11-02

申请号：US15496292

申请日：2017-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake ,  Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masataka NAKADA

IPC: H01L27/32 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1362 ,  H01L51/50 ,  G02F1/1368 ,  H01L51/52 ,  H01L29/786 ,  G02F1/1333

CPC classification number: H01L27/3232 ,  G02F1/13338 ,  G02F1/133553 ,  G02F1/133603 ,  G02F1/134309 ,  G02F1/1362 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/123 ,  G02F2201/44 ,  G02F2202/36 ,  G06F1/1652 ,  G06F3/044 ,  G06F2203/04112 ,  H01L27/323 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3267 ,  H01L27/3276 ,  H01L29/78645 ,  H01L29/7869 ,  H01L51/502 ,  H01L51/5215 ,  H01L2227/323

Abstract: A novel display device that is highly convenient or reliable is provided. The display device includes a first display element, a second display element, a first transistor, a second transistor, and a third transistor. The first display element includes a liquid crystal layer. The second display element includes a light-emitting layer. The first transistor has a function of selecting the first display element. The second transistor has a function of selecting the second display element. The third transistor has a function of controlling the driving of the second display element. The first transistor and the second transistor are formed over the same surface. The third transistor is formed above the first transistor and the second transistor and includes one of a source electrode and a drain electrode of the second transistor as a gate electrode.

公开(公告)号：US20170301796A1

公开(公告)日：2017-10-19

申请号：US15634167

申请日：2017-06-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Noritaka ISHIHARA ,  Masashi OOTA ,  Masashi TSUBUKU ,  Masami JINTYOU ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Yasuharu HOSAKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L29/04 ,  H01L29/24 ,  H01L29/423 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: Defects in an oxide semiconductor film are reduced in a semiconductor device including the oxide semiconductor film. The electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. The reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer; a metal oxide layer in contact with the oxide semiconductor layer, the metal oxide layer including an In-M oxide (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf); and a conductive layer in contact with the metal oxide layer, the conductive layer including copper, aluminum, gold, or silver is provided. In the semiconductor device, y/(x+y) is greater than or equal to 0.75 and less than 1 where the atomic ratio of In to M included in the metal oxide layer is In:M=x:y.

公开(公告)号：US20170032728A1

公开(公告)日：2017-02-02

申请号：US15218135

申请日：2016-07-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yukinori SHIMA ,  Kengo AKIMOTO ,  Yuki OKAMOTO

IPC: G09G3/20 ,  G06F3/041 ,  G02F1/1368 ,  G06F3/042 ,  H01L27/32 ,  H01L29/786

CPC classification number: G06F3/0412 ,  G02F1/13318 ,  G06F3/042 ,  G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0262 ,  G09G2320/045 ,  G09G2320/0626 ,  G09G2360/144 ,  G09G2380/02 ,  H01L27/1225 ,  H01L27/3244 ,  H01L29/7869

Abstract: A display device having high visibility regardless of illuminance of external light is provided. A display device with reduced power consumption is provided. The display device includes a first light-receiving circuit including a first light-receiving element; and a pixel circuit including a display element. The first light-receiving circuit and the pixel circuit are formed over the same substrate. The gray level of the display element is changed according to a change in the amount of light to which the first light-receiving element is exposed. In particular, the gray level of the display element is decreased with a decrease in the amount of light exposure.

Abstract translation: 提供了一种具有高可见度的显示装置，而不管外部光的照度如何。 提供了具有降低功耗的显示装置。 该显示装置包括：第一光接收电路，包括第一光接收元件; 以及包括显示元件的像素电路。 第一光接收电路和像素电路形成在相同的基板上。 显示元件的灰度级根据第一受光元件曝光的光量的变化而变化。 特别地，随着曝光量的减少，显示元件的灰度级降低。

公开(公告)号：US20160343866A1

公开(公告)日：2016-11-24

申请号：US15150755

申请日：2016-05-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/24 ,  H01L29/04 ,  H01L21/4757 ,  H01L29/66 ,  H01L21/02 ,  H01L21/477 ,  H01L21/465 ,  H01L29/49 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/465 ,  H01L21/47573 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2227/323

Abstract: The reliability of a transistor including an oxide semiconductor can be improved by suppressing a change in electrical characteristics. A transistor included in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region in contact with the gate insulating film, a source region in contact with the second insulating film, and a drain region in contact with the second insulating film. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.

Abstract translation: 通过抑制电特性的变化，能够提高包含氧化物半导体的晶体管的可靠性。 包括在半导体器件中的晶体管包括第一绝缘膜上的第一氧化物半导体膜，第一氧化物半导体膜上的栅极绝缘膜，栅极绝缘膜上的第二氧化物半导体膜，以及在第一氧化物上的第二绝缘膜 半导体膜和第二氧化物半导体膜。 第一氧化物半导体膜包括与栅极绝缘膜接触的沟道区域，与第二绝缘膜接触的源极区域和与第二绝缘膜接触的漏极区域。 第二氧化物半导体膜具有比第一氧化物半导体膜更高的载流子密度。

公开(公告)号：US20160190348A1

公开(公告)日：2016-06-30

申请号：US15062276

申请日：2016-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L21/022 ,  H01L21/02263 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L29/24 ,  H01L29/513 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693

Abstract: In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

Abstract translation: 在包括晶体管的半导体器件中，所述晶体管包括形成在衬底上的栅电极，覆盖栅电极的栅极绝缘膜，与栅电极重叠的多层膜，栅极绝缘膜设置在其间;以及一对电极， 多层膜，覆盖晶体管的第一氧化物绝缘膜和形成在第一氧化物绝缘膜上的第二氧化物绝缘膜，所述多层膜包括氧化物半导体膜和含有In或Ga的氧化物膜，所述氧化物半导体膜具有无定形 结构或微晶结构，所述第一氧化物绝缘膜是透过氧的氧化物绝缘膜，所述第二氧化物绝缘膜是比所述化学计量组成中含有氧更多的氧化物绝缘膜。

公开(公告)号：US20160155803A1

公开(公告)日：2016-06-02

申请号：US14952459

申请日：2015-11-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masami JINTYOU ,  Yasutaka NAKAZAWA ,  Toshimitsu OBONAI ,  Yukinori SHIMA ,  Daisuke KUROSAKI

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/127 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A change in electrical characteristics is inhibited and reliability is improved in a semiconductor device including an oxide semiconductor film. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a channel region and n-type regions in contact with the pair of electrodes. The channel region has fewer oxygen vacancies than the n-type regions.

Abstract translation: 在包括氧化物半导体膜的半导体器件中，电特性的变化受到抑制，可靠性提高。 半导体器件包括栅电极，栅电极上的栅极绝缘膜，栅极绝缘膜上的氧化物半导体膜，以及氧化物半导体膜上的一对电极。 氧化物半导体膜包括与该对电极接触的沟道区和n型区。 通道区域具有比n型区域少的氧空位。