摘要:
Devices are disclosed herein which may comprise a vessel; a material disposed in the vessel for creating an EUV light emitting plasma at a plasma site, the plasma generating debris; a near normal incidence EUV reflective optic disposed in the vessel; and a source of a magnetic field for deflecting debris in the vessel to protect the optic, the source positioned to interpose the optic between the source and the plasma site.
摘要:
An EUV light source is disclosed that may include a laser source, e.g. CO2 laser, a plasma chamber, and a beam delivery system for passing a laser beam from the laser source into the plasma chamber. Embodiments are disclosed which may include one or more of the following; a bypass line may be provided to establish fluid communication between the plasma chamber and the auxiliary chamber, a focusing optic, e.g. mirror, for focusing the laser beam to a focal spot in the plasma chamber, a steering optic for steering the laser beam focal spot in the plasma chamber, and an optical arrangement for adjusting focal power.
摘要:
An apparatus and method is disclosed which may comprise a laser produced plasma EUV system which may comprise a drive laser producing a drive laser beam; a drive laser beam first path having a first axis; a drive laser redirecting mechanism transferring the drive laser beam from the first path to a second path, the second path having a second axis; an EUV collector optical element having a centrally located aperture; and a focusing mirror in the second path and positioned within the aperture and focusing the drive laser beam onto a plasma initiation site located along the second axis. The apparatus and method may comprise the drive laser beam is produced by a drive laser having a wavelength such that focusing on an EUV target droplet of less than about 100 μm at an effective plasma producing energy is not practical in the constraints of the geometries involved utilizing a focusing lens. The drive laser may comprise a CO2 laser. The drive laser redirecting mechanism may comprise a mirror.
摘要:
Apparatus and methods are disclosed for forming plasma generated EUV light source optical elements, e.g., reflectors comprising MLM stacks employing various binary layer materials and capping layer(s) including single and binary capping layers for utilization in plasma generated EUV light source chambers, particularly where the plasma source material is reactive with one or more of the MLM materials.
摘要:
An EUV plasma formation target delivery system and method is disclosed which may comprise: a target droplet formation mechanism comprising a magneto-restrictive or electro-restrictive material, a liquid plasma source material passageway terminating in an output orifice; a charging mechanism applying charge to a droplet forming jet stream or to individual droplets exiting the passageway along a selected path; a droplet deflector intermediate the output orifice and a plasma initiation site periodically deflecting droplets from the selected path, a liquid target material delivery mechanism comprising a liquid target material delivery passage having an input opening and an output orifice; an electromotive disturbing force generating mechanism generating a disturbing force within the liquid target material, a liquid target delivery droplet formation mechanism having an output orifice; and/or a wetting barrier around the periphery of the output orifice.
摘要:
An EUV light source collector erosion mitigation system and method is disclosed which may comprise a collector comprising a multilayered mirror collector comprising a collector outer surface composed of a capping material subject to removal due to a removing interaction with materials created in an EUV light-creating plasma; a replacement material generator positioned to deliver replacement material comprising the capping material to the collector outer surface at a rate sufficient to replace the capping material removed due to the removing interaction. The replacement material generator may comprise a plurality of replacement material generators positioned to respectively deliver replacement material to a selected portion of the collector outer surface, which may comprise a sputtering mechanism sputtering replacement capping material onto the collector outer surface.
摘要:
Apparatus/method providing bandwidth control in narrow band short pulse duration gas discharge laser output light pulse beam producing systems, producing a beam comprising pulses at selected pulse repetition races, e.g., comprising a dispersive bandwidth selection optic selecting at least one center wavelength for each pulse determined at least in part by the angle of incidence of the beam containing the respective pulse on the optic; a tuning mechanism operative to select at least one angle of incidence of the beam containing the respective pulse upon the optic; the tuning mechanism comprising a plurality of incidence angle selection elements each defining an angle of incidence for a different spatially separated but not temporally separated portion of the pulse to return from the optic a laser light pulse comprising a plurality of spatially separated but not temporally separated portions, each having one of at least two different selected center wavelengths.
摘要:
An EUV light source collector erosion mitigation method and apparatus for a collector comprising a multilayered mirror collector comprising a collector outer surface composed of a capping material subject to removal due to a removing interaction with materials created in an EUV light-creating plasma, is disclosed which may comprise including within an EUV plasma source material a replacement material. The replacement material may comprise the same material as the capping material of the multilayered mirror. The replacement material may comprise a material that is essentially transparent to light in a selected band of EUV light, e.g., a spectrum of EUV light generated in a plasma of a plasma source material. The replacement material may comprise a material not susceptible to being etched by an etching material used to remove deposited plasma source material from the collector, e.g., a halogen etchant.
摘要:
An oscillator-amplifier gas discharge laser system and method is disclosed which may comprise a first laser unit which may comprise a first discharge region which may contain an excimer or molecular fluorine lasing gas medium; a first pair of electrodes defining the first discharge region containing the lasing gas medium, a line narrowing unit for narrowing a spectral bandwidth of output laser light pulse beam pulses produced in said first discharge region; a second laser unit which may comprise a second discharge chamber which may contain an excimer or molecular fluorine lasing gas medium; a second pair of electrodes defining the second discharge region containing the lasing gas medium; a pulse power system providing electrical pulses to the first pair of electrodes and to the second pair of electrodes producing gas discharges in the lasing gas medium between the respective first and second pair of electrodes, and laser parameter control mechanism modifying a selected parameter of a selected laser output light pulse beam pulse produced by said gas discharge laser system by controlling the timing of the occurrence of the gas discharge between the first pair of electrodes and the occurrence of the gas discharge between the second pair of electrodes.
摘要:
A narrow band F2 laser system having two laser subsystems. The first laser subsystem is configured to provide a very narrow band pulsed beam at a first narrow wavelength range corresponding to a first natural emission line of the F2 laser system. This beam is injected into the gain medium of the second laser subsystem in a first direction where the beam is amplified to produce a narrow band pulsed output beam. The seed laser subsystem also produces a second pulsed beam at a second wavelength range corresponding to a second natural emission line of the F2 laser. This line is injected into the gain medium of the second laser subsystem in a second direction opposite said first direction. The second beam is amplified in the gain medium of the second laser subsystem depleting the gain medium of gain potential at the second wavelength range. (This amplified second beam is preferably wasted.) With the gain potential at the second undesired wavelength the range thus reduced the portion of light at the second wavelength range in the output beam is greatly reduced.