Method for stress-adjusted operation of a projection exposure system and corresponding projection exposure system
    74.
    发明授权
    Method for stress-adjusted operation of a projection exposure system and corresponding projection exposure system 有权
    投影曝光系统和相应投影曝光系统的应力调整操作方法

    公开(公告)号:US09086637B2

    公开(公告)日:2015-07-21

    申请号:US13590673

    申请日:2012-08-21

    IPC分类号: G03B27/54 G03B27/42 G03F7/20

    摘要: A projection exposure system and a method for operating a projection exposure system for microlithography with an illumination system are disclosed. The illumination system includes at least one variably adjustable pupil-defining element. The illumination stress of at least one optical element of the projection exposure system is determined automatically in the case of an adjustment of the at least one variably adjustable pupil-defining element. From the automatically determined illumination stress, the maximum radiant power of the light source is set or determined and/or in which an illumination system is provided with which different illumination settings can be made. Usage of the projection exposure system is recorded and, from the history of the usage, at least one state parameter of at least one optical element of the projection exposure system is determined.

    摘要翻译: 公开了一种用于利用照明系统操作用于微光刻的投影曝光系统的投影曝光系统和方法。 所述照明系统包括至少一个可变地调整的光瞳限定元件。 在调整至少一个可变瞳孔限定元件的情况下,自动确定投影曝光系统的至少一个光学元件的照明应力。 根据自动确定的照明应力,设置或确定光源的最大辐射功率,和/或其中提供可以进行不同照明设置的照明系统。 记录投影曝光系统的使用,并且根据使用历史确定投影曝光系统的至少一个光学元件的至少一个状态参数。

    Method and system for correcting image changes
    75.
    发明授权
    Method and system for correcting image changes 有权
    用于校正图像变化的方法和系统

    公开(公告)号:US08325323B2

    公开(公告)日:2012-12-04

    申请号:US12361842

    申请日:2009-01-29

    IPC分类号: G03F7/20

    CPC分类号: G03F7/70891 G03F7/70258

    摘要: The disclosure relates to a method for compensating image errors, generated by intensity distributions in optical systems, such as in projection lens arrays of microlithography systems, and to respective optical systems, such as projection lens arrays of microlithography systems.

    摘要翻译: 本公开涉及一种用于补偿由光学系统中的强度分布产生的图像误差的方法,例如在微光刻系统的投影透镜阵列中,以及相应的光学系统,例如微光刻系统的投影透镜阵列。

    CATADIOPTRIC PROJECTION OBJECTIVE
    76.
    发明申请
    CATADIOPTRIC PROJECTION OBJECTIVE 有权
    目标投影目标

    公开(公告)号:US20110075121A1

    公开(公告)日:2011-03-31

    申请号:US12748862

    申请日:2010-03-29

    IPC分类号: G03B27/72 G02B17/06

    摘要: Catadioptric projection objective (1) for microlithography for imaging an object field (3) in an object plane (5) onto an image field (7) in an image plane (9), including a first partial objective (11) imaging the object field onto a first real intermediate image (13), a second partial objective (15) imaging the first intermediate image onto a second real intermediate image (17) and a third partial objective (19) imaging the second intermediate image onto the image field (7). The second partial objective (15) has exactly one concave mirror (21) and at least one lens (23). The minimum distance between an optically utilized region of the concave mirror (21) and an optically utilized region of a surface (25)—facing the concave mirror—of a lens (23) adjacent to the concave mirror is greater than 10 mm.

    摘要翻译: 用于微光刻的反折射投影物镜(1),用于将物平面(5)中的物场(3)成像到图像平面(9)中的图像场(7),包括对物场进行成像的第一部分物镜(11) 到第一实际中间图像(13),将第一中间图像成像到第二实际中间图像(17)上的第二部分目标(15)和将第二中间图像成像到图像场(7)上的第三部分目标(19) )。 第二部分物镜(15)具有正好一个凹面镜(21)和至少一个透镜(23)。 凹面镜(21)的光学利用区域与与凹面镜相邻的透镜(23)的凹面镜的表面(25)的光学利用区域之间的最小距离大于10mm。

    OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    77.
    发明申请
    OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
    微波投影曝光装置的光学系统

    公开(公告)号:US20100201960A1

    公开(公告)日:2010-08-12

    申请号:US12765285

    申请日:2010-04-22

    摘要: In a method for improving imaging properties of an illumination system or a projection objective of a microlithographic projection exposure apparatus, which comprises an optical element having a surface, the shape of the surface is measured directly at various points. To this end, a measuring beam is directed on the points, and the reflected or refracted beam is measured, e.g. using an interferometer. Based on deviations of the measured shape from a target shape, corrective measures are derived so that the imaging errors of the optical system are improved. The corrective measures may comprise a change in the position or the shape of the optical element being analyzed, or another optical element of the optical system. The target shape of the surface may, for example, be determined so that the optical element at least partially corrects imaging errors caused by other optical elements.

    摘要翻译: 在用于改善包括具有表面的光学元件的微光刻投影曝光装置的照明系统或投影物镜的成像特性的方法中,直接在各个点测量表面的形状。 为此,测量光束被引导到这些点上,并且测量反射或折射的光束。 使用干涉仪。 基于测量形状与目标形状的偏差,导出校正措施,使得光学系统的成像误差得到改善。 校正措施可以包括被分析的光学元件的位置或形状的改变,或光学系统的另一个光学元件的变化。 例如,可以确定表面的目标形状,使得光学元件至少部分地校正由其它光学元件引起的成像误差。

    METHOD OF MANUFACTURING A MINIATURIZED DEVICE
    79.
    发明申请
    METHOD OF MANUFACTURING A MINIATURIZED DEVICE 有权
    制造微型器件的方法

    公开(公告)号:US20090190116A1

    公开(公告)日:2009-07-30

    申请号:US12408577

    申请日:2009-03-20

    IPC分类号: G03B27/42 G03B27/54

    CPC分类号: G03B27/42 G03F7/70258

    摘要: A lithographic method of manufacturing a miniaturized device using a projection exposure system involves illuminating the object plane of an imaging optics of the projection exposure system with measuring light; detecting, for each of a plurality of locations on an image plane of the imaging optics, an angular distribution of an intensity of the measuring light traversing the image plane at the respective location; adjusting a telecentricity of the projection exposure system based on a selected patterning structure to be imaged and on the plurality of the detected angular distributions; disposing the selected pattern structure to be imaged in a region of the object plane of the imaging optics; disposing a substrate carrying a resist in a region of the image plane of the imaging optics and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and developing the exposed resist and processing the substrate with the developed resist.

    摘要翻译: 使用投影曝光系统制造小型化装置的光刻方法包括用测量光照射投影曝光系统的成像光学元件的物平面; 针对所述摄像光学元件的像平面上的多个位置中的每一个检测在相应位置处穿过所述图像平面的测量光的角度分布; 基于要成像的所选择的图案化结构和所述多个所检测的角度分布来调整所述投影曝光系统的远心度; 将要成像的所选择的图案结构设置在成像光学器件的物平面的区域中; 在所述成像光学元件的像面的区域中设置携带抗蚀剂的基板,并且利用所述投影曝光系统以调节的远心度将成像光曝光; 并显影出曝光的抗蚀剂并用显影的抗蚀剂处理衬底。

    COMBINATION STOP FOR CATOPTRIC PROJECTION ARRANGEMENT
    80.
    发明申请
    COMBINATION STOP FOR CATOPTRIC PROJECTION ARRANGEMENT 有权
    用于投影安排的组合停止

    公开(公告)号:US20090021714A1

    公开(公告)日:2009-01-22

    申请号:US12173595

    申请日:2008-07-15

    IPC分类号: G03B27/54

    摘要: The disclosure relates to an optical projection arrangement that can be used to image a reticle onto a substrate. The projection arrangement includes reflective elements, by which a ray path is defined. A combination stop is in a pupil of the ray path. The combination stop has a first opening (aperture opening) for use as an aperture stop. The combination stop also has a second opening for allowing passage of a ray bundle of the ray path, such that the combination stop acts as a combined aperture stop and stray light stop. In addition, the disclosure relates to a corresponding combination stop for optical arrangements, as well as related systems, components and methods.

    摘要翻译: 本公开涉及一种可用于将掩模版成像到基底上的光学投影装置。 投影装置包括反射元件,通过该反射元件定义光线路径。 光束路径中的光瞳组合停止。 组合止动件具有用作孔径光阑的第一开口(孔口)。 组合挡块还具有用于允许射线路径的射线束通过的第二开口,使得组合挡块用作组合孔径光阑和杂散光挡块。 此外,本公开涉及用于光学布置的相应组合停止,以及相关系统,部件和方法。