公开(公告)号：US07397831B2

公开(公告)日：2008-07-08

申请号：US10986936

申请日：2004-11-15

申请人： Mikio Hongo ,  Akio Yazaki ,  Mutsuko Hatano

发明人： Mikio Hongo ,  Akio Yazaki ,  Mutsuko Hatano

IPC分类号： H01S3/00

CPC分类号： B23K26/0738 ,  B23K26/0853 ,  G02B27/0927 ,  G02B27/0966 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser beam temporally modulated in amplitude by a modulator and shaped into a long and narrow shape by a beam shaper is rotated around the optical axis of an image rotator inserted between the beam shaper and a substrate. Thus, the longitudinal direction of the laser beam having the long and narrow shape is rotated around the optical axis on the substrate. In order to perform annealing in a plurality of directions on the substrate, the laser beam shaped into the long and narrow shape is rotated on the substrate while a stage mounted with the substrate is moved only in two directions, that is, X- and Y-directions.In such a manner, the substrate can be scanned at a high speed with a continuous wave laser beam modulated temporally in amplitude and shaped into a long and narrow shape, without rotating the substrate. Thus, a semiconductor film can be annealed.

摘要翻译： 通过调制器暂时调制振幅的激光束并通过光束整形器成形为长而窄的形状围绕插入在光束整形器和基板之间的图像旋转器的光轴旋转。 因此，具有长而窄形状的激光束的纵向方向围绕基板上的光轴旋转。 为了在基板上沿多个方向进行退火，将形成为长而窄的形状的激光束在基板上旋转，而安装有基板的台仅沿两个方向移动，即，X轴和Y轴 方向 以这样一种方式，可以用波长时间上调制并成形为长而窄的连续波激光束高速扫描基板，而不旋转基板。 因此，半导体膜可以退火。

公开(公告)号：US20080142920A1

公开(公告)日：2008-06-19

申请号：US11956551

申请日：2007-12-14

申请人： Mitsuharu Tai ,  Hideo Sato ,  Mutsuko Hatano ,  Masayoshi Kinoshita

发明人： Mitsuharu Tai ,  Hideo Sato ,  Mutsuko Hatano ,  Masayoshi Kinoshita

IPC分类号： G09G5/00 ,  H01L31/103

CPC分类号： H01L27/1214 ,  G09G2360/14 ,  H01L31/1136

摘要： According to the present invention, a highly sensitive photo-sensing element and a sensor driver circuit are prepared by planer process on an insulating substrate by using only polycrystalline material. Both the photo-sensing element and the sensor driver circuit are made of polycrystalline silicon film. As the photo-sensing element, a photo transistor is formed by using TFT, which comprises a first electrode 11 prepared on an insulating substrate 10, a photoelectric conversion region 14 and a second electrode 12, and a third electrode 13 disposed above the photoelectric conversion region 14. An impurity layer positioned closer to an intrinsic layer (density of active impurities is 1017 cm−3 or lower) is provided on the regions 15 and 16 on both sides under the third electrode 13 or on one of the regions 15 or 16 on one side.

摘要翻译： 根据本发明，通过仅使用多晶材料，通过平面法在绝缘基板上制备高灵敏度的感光元件和传感器驱动电路。 感光元件和传感器驱动电路都由多晶硅膜制成。 作为感光元件，通过使用TFT形成光电晶体管，该TFT包括在绝缘基板10上制备的第一电极11，光电转换区域14和第二电极12以及设置在光电转换器之上的第三电极13 区域14。 位于更靠近本征层的杂质层（活性杂质的密度为10 -3 -3 -3或更低）设置在两侧的区域15和16上 第三电极13或一侧的区域15或16中的一个上。

公开(公告)号：US20070216668A1

公开(公告)日：2007-09-20

申请号：US11704187

申请日：2007-02-09

申请人： Mitsuhide Miyamoto ,  Mutsuko Hatano ,  Hajime Akimoto ,  Kazuki Watanabe ,  Kouichi Uesaka

发明人： Mitsuhide Miyamoto ,  Mutsuko Hatano ,  Hajime Akimoto ,  Kazuki Watanabe ,  Kouichi Uesaka

IPC分类号： G09G5/00

CPC分类号： G06F3/147 ,  G09G3/2096 ,  G09G5/397 ,  G09G2300/0857 ,  G09G2310/0275 ,  G09G2310/0289 ,  G09G2360/18 ,  G09G2370/16

摘要： Disclosed herewith is an information terminal provided with a function for displaying image data. An electromagnetic wave output from a main device provided outside the information terminal is received by an antenna and converted to a binary signal by a wave detection circuit. Using the signal obtained by this wave detection circuit, a power supply circuit generates a power for driving a processor, a memory, a display part, a data line driving signal, a data line driving signal, and a timing controller. The processor decodes the signal received by the wave detection circuit and stores the received information in the memory. The timing controller generates control signals of the data line driving circuit and the scanning line driving circuit, as well as image data so as to display images on the display part.

摘要翻译： 本发明是一种具有显示图像数据功能的信息终端。 从设置在信息终端外部的主装置输出的电磁波由天线接收并由波检测电路转换为二进制信号。 使用由该波检测电路获得的信号，电源电路产生用于驱动处理器，存储器，显示部分，数据线驱动信号，数据线驱动信号和定时控制器的电力。 处理器解码由波检测电路接收的信号，并将接收的信息存储在存储器中。 定时控制器产生数据线驱动电路和扫描线驱动电路的控制信号，以及图像数据，以便在显示部分上显示图像。

公开(公告)号：US20070134893A1

公开(公告)日：2007-06-14

申请号：US11702576

申请日：2007-02-06

申请人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Mitsuharu Tai ,  Hajime Akimoto

发明人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Mitsuharu Tai ,  Hajime Akimoto

IPC分类号： H01L21/20

CPC分类号： H01L21/02683 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.

摘要翻译： 提供一种制造具有有源矩阵基板的图像显示装置的方法，所述有源矩阵基板包括以高迁移率运行的高性能晶体管电路作为用于驱动作为矩阵布置的像素部分的驱动电路。 形成在构成图像显示装置的有源矩阵基板SUB1的像素区域PAR的周围的驱动电路区域DAR 1中的多晶硅膜的部分被照射并用脉冲调制激光束或伪CW激光 光束被重新形成具有在扫描方向上连续的晶体边界的准带状晶体硅膜，从而形成各自由准带状晶体硅膜构成的分立的重整区域。 在由分立重构区域构成的虚拟瓦片TL中，形成具有诸如薄膜晶体管等有源元件的驱动电路，使得其沟道方向与准带状晶体硅中的晶体生长方向一致 电影。

公开(公告)号：US20060003478A1

公开(公告)日：2006-01-05

申请号：US11209742

申请日：2005-08-24

申请人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Nakoto Ohkura

发明人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Nakoto Ohkura

IPC分类号： H01L21/00

CPC分类号： H01L29/04 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  B23K26/0665 ,  B23K26/0732 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： Arrangements (e.g., methods) for manufacturing a display device, including irradiating an amorphous semiconductor film formed on a substrate with an excimer laser beam to convert the amorphous semiconductor film into a polycrystalline semiconductor film; and irradiating predetermined areas of the polycrystalline semiconductor film intermittently with a continuous wave laser beam while a position of the substrate with respect to the continuous wave laser beam is scanned, crystal grains larger than those of the polycrystalline semiconductor film other than the predetermined areas are formed in each of the predetermined areas locally in the polycrystalline semiconductor film, wherein first thin film transistors are formed in the predetermined areas while second thin film transistors are formed in the polycrystalline semiconductor film other than the predetermined areas thereof.

摘要翻译： 包括用于制造显示装置的布置（例如，方法），包括用准分子激光束照射形成在衬底上的非晶半导体膜，以将非晶半导体膜转换为多晶半导体膜; 并且在扫描基板相对于连续波激光束的位置时，用连续波激光束间歇地照射多晶半导体膜的预定区域，形成比除了预定区域以外的多晶半导体膜的晶粒大的晶粒 在多晶半导体膜中局部的每个预定区域中，其中第一薄膜晶体管形成在预定区域中，而第二薄膜晶体管形成在除了其预定区域之外的多晶半导体膜中。

公开(公告)号：US20060001051A1

公开(公告)日：2006-01-05

申请号：US11171219

申请日：2005-07-01

申请人： Mitsuharu Tai ,  Mutsuko Hatano ,  Yoichi Takahara ,  Hiroki Takahashi ,  Akio Yazaki ,  Takeshi Noda

发明人： Mitsuharu Tai ,  Mutsuko Hatano ,  Yoichi Takahara ,  Hiroki Takahashi ,  Akio Yazaki ,  Takeshi Noda

IPC分类号： H01L29/745 ,  H01L21/335

CPC分类号： H01L29/78603 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78675

摘要： Agglomeration of a polycrystalline silicon film is eliminated at the time of obtaining a high quality polycrystalline silicon film by forming a silicon layer on an insulating film substrate and conducting long-term melting and re-crystallization. For this purpose, a layer or a plurality of layers of an underlayer UCL are provided on an insulating substrate GLS, the area near the surface in contact with a precursory silicon film PCF provided on this underlayer UCL is formed as an insulating film UCLP showing a film composition to improve the wettability of the melted silicon layer, and thereafter a high quality polycrystalline silicon film PSI is formed through elimination of agglomeration by melting of the precursory silicon film PCF using a laser beam LSR.

摘要翻译： 通过在绝缘膜基板上形成硅层并进行长期熔化和再结晶，在获得高质量的多晶硅膜时消除了多晶硅膜的聚集。 为此，在绝缘基板GLS上设置一层或多层下层UCL，在与该底层UCL上设置的前体硅膜PCF接触的表面附近的区域形成为绝缘膜UCLP， 膜组合物以提高熔融硅层的润湿性，然后通过使用激光束LSR熔化前体硅膜PCF消除聚集而形成高质量的多晶硅膜PSI。

公开(公告)号：US06969871B2

公开(公告)日：2005-11-29

申请号：US10438843

申请日：2003-05-16

申请人： Shinya Yamaguchi ,  Mutsuko Hatano ,  Mitsuharu Tai ,  Sedng-Kee Park ,  Takeo Shiba

发明人： Shinya Yamaguchi ,  Mutsuko Hatano ,  Mitsuharu Tai ,  Sedng-Kee Park ,  Takeo Shiba

IPC分类号： G02F1/1345 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L27/1285 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/02675 ,  H01L21/02691 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： In a film semiconductor device according to the present invention, a continuous oscillating light beam from a solid laser or the like is modulated on time axis and spatially, thereby realizing crystal growth that is nearly optimum for a crystal structure and growth speed of crystals in a Si thin film. Crystal grains with a large diameter, flatness with no projections at their grain boundaries, and controlled surface orientations are thereby formed. By forming channels with these crystal grains, high mobility semiconductor devices and an image display device using these semiconductor devices are realized.

摘要翻译： 在根据本发明的薄膜半导体器件中，在时间轴上和空间上调制来自固体激光器等的连续振荡光束，从而实现对晶体结构几乎最佳的晶体生长和晶体的生长速度 Si薄膜。 从而形成具有大直径的晶粒，在其晶界处没有突起的平坦度和受控的表面取向。 通过形成具有这些晶粒的通道，实现了高迁移率半导体器件和使用这些半导体器件的图像显示器件。

公开(公告)号：US20050255679A1

公开(公告)日：2005-11-17

申请号：US11186907

申请日：2005-07-22

申请人： Shinya Yamaguchi ,  Mutsuko Hatano ,  Mitsuharu Tai ,  Sedng-Kee Park ,  Takeo Shiba

发明人： Shinya Yamaguchi ,  Mutsuko Hatano ,  Mitsuharu Tai ,  Sedng-Kee Park ,  Takeo Shiba

IPC分类号： G02F1/1345 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L27/1285 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/02675 ,  H01L21/02691 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： In a thin film semiconductor device according to the present invention, a continuous oscillating light beam from a solid laser or the like is modulated on time axis and spatially, thereby realizing crystal growth that is nearly optimum for a crystal structure and a growth speed of crystals in a Si thin film. Crystal grains with a large diameter, flatness with no projections at their grain boundaries, and controlled surface orientations are thereby formed. By forming channels with these crystal grains, high-mobility semiconductor devices and an image display device using these semiconductor devices are realized.

摘要翻译： 在根据本发明的薄膜半导体器件中，在时间轴上调制来自固体激光器等的连续振荡光束，从而实现对于晶体结构和晶体生长速度几乎最佳的晶体生长 在Si薄膜中。 从而形成具有大直径的晶粒，在其晶界处没有突起的平坦度和受控的表面取向。 通过形成具有这些晶粒的沟道，实现了高迁移率半导体器件和使用这些半导体器件的图像显示器件。

公开(公告)号：US20050169330A1

公开(公告)日：2005-08-04

申请号：US10987003

申请日：2004-11-15

申请人： Mikio Hongo ,  Akio Yazaki ,  Mutsuko Hatano ,  Takeshi Noda ,  Yukio Takasaki

发明人： Mikio Hongo ,  Akio Yazaki ,  Mutsuko Hatano ,  Takeshi Noda ,  Yukio Takasaki

IPC分类号： H01L21/324 ,  B23K26/073 ,  C30B13/24 ,  C30B29/06 ,  H01L21/20 ,  H01L21/268 ,  H01L29/04 ,  H01L29/786 ,  H01S3/00 ,  H01L21/00 ,  H01L21/84 ,  H01L21/76 ,  C30B1/00 ,  H01L21/36

CPC分类号： H01L21/02691 ,  B23K26/0738 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2026 ,  H01L29/04 ,  H01L29/78675

摘要： When a laser bean temporally modulated in amplitude by a modulator is shaped into a long and narrow beam by a beam shaper, the scanning-direction size of the long and narrow beam shaped by the beam shaper is selected to be in a range of from 2 to 10 microns, preferably in a range of from 2 to 4 microns and the scanning speed of the beam is selected to be in a range of from 300 to 1000 mm/s, preferably in a range of from 500 to 1000 m/s. As a result, damage of the silicon thin film can be suppressed while energy utilizing efficiency of the laser beam can be improved. Accordingly, laterally grown crystals (belt-like crystals) improved in throughput can be obtained on a required region of a substrate scanned and irradiated with the laser beam.

摘要翻译： 当通过调制器在振幅时间上调制的激光束通过光束整形器成形为长而窄的光束时，由光束整形器成形的长而窄的光束的扫描方向尺寸被选择在2 至10微米，优选在2至4微米的范围内，并且光束的扫描速度选择在300至1000mm / s的范围内，优选在500至1000m / s的范围内。 结果，可以抑制硅薄膜的损伤，同时提高激光束的能量利用效率。 因此，可以在扫描并照射激光束的基板的所需区域上获得提高生产量的横向生长的晶体（带状晶体）。

公开(公告)号：US20050127361A1

公开(公告)日：2005-06-16

申请号：US11047620

申请日：2005-02-02

申请人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba

发明人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L31/113

CPC分类号： H01L21/02686 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/045 ,  H01L29/6675 ,  H01L29/66765 ,  H01L29/78648 ,  H01L29/78672 ,  H01L29/78678

摘要： A thin film semiconductor device has a semiconductor thin film with a film thickness of 200 nm or less. The semiconductor thin film is formed over a dielectric substrate with a warping point of 600° C. or lower. The semiconductor thin film has a region in which a first semiconductor thin film region with the defect density of 1×1017 cm−3 or less and a second semiconductor thin film region with the defect density of 1×1017 cm−3 or more are disposed alternately in the form of stripes. The width of the first semiconductor thin film region is larger than the width of the semiconductor thin film region. The grain boundaries, grain size and orientation of crystals over the dielectric substrate are controlled, so that a high quality thin film semiconductor device is obtained.

摘要翻译： 薄膜半导体器件具有膜厚度为200nm以下的半导体薄膜。 半导体薄膜形成在电介质基板上，其翘曲点为600℃以下。 半导体薄膜具有其缺陷密度为1×10 -3 -3 -3以下的第一半导体薄膜区域和具有第一半导体薄膜区域的区域 1×10 3 -3 -3以上的缺陷密度以条纹的形式交替设置。 第一半导体薄膜区域的宽度大于半导体薄膜区域的宽度。 控制电介质基板上晶界的晶界，晶粒尺寸和取向，从而获得高品质的薄膜半导体器件。