公开(公告)号：USRE43966E1

公开(公告)日：2013-02-05

申请号：US12476428

申请日：2009-06-02

申请人： Tadashi Kobayashi ,  Hisashi Yamada

发明人： Tadashi Kobayashi ,  Hisashi Yamada

IPC分类号： B32B3/02

CPC分类号： B29C65/48 ,  B29C45/263 ,  B29C65/521 ,  B29C66/1122 ,  B29C66/452 ,  B29C66/71 ,  B29C66/73161 ,  B29C66/73341 ,  B29C66/73365 ,  B29C66/8322 ,  B29C2045/2653 ,  B29D17/005 ,  B29L2017/005 ,  G11B7/24 ,  G11B7/263 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/21 ,  Y10T428/31678 ,  B29K2023/06 ,  B29K2025/04 ,  B29K2025/06 ,  B29K2033/12 ,  B29K2055/02 ,  B29K2059/00 ,  B29K2063/00 ,  B29K2069/00

摘要： An information recording medium comprising a substrate having a recording surface provided with emboss pits or guiding grooves, a reflective film formed on the recording surface of the substrate, and a first protective film formed on the reflective film. This information recording medium is featured in that both sides of the information recording medium are constituted by a first surface provided with the protective film and by a second surface formed opposite to the first surface, and that an irradiated light beam is irradiated through the first surface, a recorded information being reproduced based on changes in light intensity of the reflected light beam. The distance between the recording surface of the substrate and the light incident surface is smaller than a thickness of the substrate, and a surface roughness “R” of the light incident surface meets a relationship represented by the following formula (1): R≦λ/(8n)   (1) wherein λ is a wavelength of the light beam, and n is a refractive index of the first protective film to a light having the wavelength λ.

摘要翻译： 一种信息记录介质，包括具有设置有浮雕凹坑或引导槽的记录表面的基板，形成在基板的记录表面上的反射膜和形成在反射膜上的第一保护膜。 该信息记录介质的特征在于信息记录介质的两侧由设置有保护膜的第一表面和与第一表面相对的第二表面构成，照射的光束通过第一表面 基于反射光束的光强度的变化再现被记录的信息。 基板的记录面与光入射面的距离小于基板的厚度，光入射面的表面粗糙度R满足由下式（1）表示的关系：R＆lt; ll;λ/（ 8n）（1）其中λ是光束的波长，n是第一保护膜对具有波长λ的光的折射率。

公开(公告)号：US20120228673A1

公开(公告)日：2012-09-13

申请号：US13413216

申请日：2012-03-06

申请人： Masahiko HATA ,  Hisashi Yamada ,  Noboru Fukuhara ,  Shinichi Takagi ,  Mitsuru Takenaka ,  Masafumi Yokoyama ,  Tetsuji Yasuda ,  Yuji Urabe ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii

发明人： Masahiko HATA ,  Hisashi Yamada ,  Noboru Fukuhara ,  Shinichi Takagi ,  Mitsuru Takenaka ,  Masafumi Yokoyama ,  Tetsuji Yasuda ,  Yuji Urabe ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/20

CPC分类号： H01L29/7786 ,  H01L21/26553 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66318 ,  H01L29/66522

摘要： Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0

摘要翻译： 提供了一种场效应晶体管，其包括栅极绝缘层，与栅极绝缘层接触的第一半导体晶体层和第二半导体晶体层与第一半导体晶体层的晶格匹配或伪晶格匹配。 这里，栅绝缘层，第一半导体晶体层和第二半导体晶体层按栅极绝缘层，第一半导体晶体层和第二半导体晶体层的顺序排列，第一半导体晶体层被制成 的In x Ga 1-x As y 1 P 1-y 1（0

公开(公告)号：US20110237054A1

公开(公告)日：2011-09-29

申请号：US13152553

申请日：2011-06-03

申请人： Kenji Iso ,  Hisashi Yamada ,  Makoto Saito ,  Asako Hirai ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

发明人： Kenji Iso ,  Hisashi Yamada ,  Makoto Saito ,  Asako Hirai ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC分类号： H01L21/20

CPC分类号： C30B25/18 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nonpolar III-nitride film grown on a miscut angle of a substrate. The miscut angle towards the direction is 0.75° or greater miscut and less than 27° miscut towards the direction. Surface undulations are suppressed and may comprise faceted pyramids. A device fabricated using the film is also disclosed. A nonpolar III-nitride film having a smooth surface morphology fabricated using a method comprising selecting a miscut angle of a substrate upon which the nonpolar III-nitride films are grown in order to suppress surface undulations of the nonpolar III-nitride films. A nonpolar III-nitride-based device grown on a film having a smooth surface morphology grown on a miscut angle of a substrate which the nonpolar III-nitride films are grown. The miscut angle may also be selected to achieve long wavelength light emission from the nonpolar film.

摘要翻译： 在基板的杂散角上生长的非极性III族氮化物膜。 朝向<000-1>方向的误差角为0.75°或更大，而朝向<000-1>方向小于27°。 表面起伏被抑制，并且可以包括刻面金字塔。 还公开了使用该膜制造的器件。 使用包括选择生长非极性III族氮化物膜的衬底的误差角以抑制非极性III族氮化物膜的表面波动的方法制造具有光滑表面形态的非极性III族氮化物膜。 生长在具有平滑表面形态的膜上生长的非极性III族氮化物基器件，其生长在非极性III族氮化物膜生长的衬底的杂散角上。 还可以选择误差角以实现来自非极性膜的长波长发光。

公开(公告)号：US08003911B2

公开(公告)日：2011-08-23

申请号：US12445207

申请日：2006-10-24

申请人： Yasuo Onodera ,  Tatsushi Sato ,  Takashi Hashimoto ,  Hisashi Yamada ,  Koichiro Hattori ,  Yoshikazu Ukai

发明人： Yasuo Onodera ,  Tatsushi Sato ,  Takashi Hashimoto ,  Hisashi Yamada ,  Koichiro Hattori ,  Yoshikazu Ukai

IPC分类号： B23H7/04 ,  B23H1/02

CPC分类号： B23H7/04

摘要： A machining-energy calculating unit accumulates a discharge current value for each discharge position to calculate a machining energy in a certain time period from the present time to the past time. An energy-distribution changing unit determines the presence or absence of imbalance in the energy by obtaining a machining energy distribution in an up-down direction of the machining gap based on the machining energy, and when there is imbalance, the energy-distribution changing unit produces a new open/close pattern in which a machining energy distribution that eliminates the imbalance. Power feeding is then performed based on the new open/close pattern.

摘要翻译： 加工能量计算单元累积针对每个排出位置的排出电流值，以计算从当前时间到过去时间的一定时间段内的加工能量。 能量分配改变单元通过基于加工能量获得加工间隙的上下方向的加工能量分布来确定能量的不平衡，并且当存在不平衡时，能量分配改变单元 产生新的开/关模式，其中消除不平衡的加工能量分布。 然后基于新的开/关模式进行供电。

公开(公告)号：US07928337B2

公开(公告)日：2011-04-19

申请号：US11883999

申请日：2006-10-24

申请人： Yasuo Onodera ,  Tatsushi Sato ,  Yoshikazu Ukai ,  Takashi Hashimoto ,  Koichiro Hattori ,  Hisashi Yamada

发明人： Yasuo Onodera ,  Tatsushi Sato ,  Yoshikazu Ukai ,  Takashi Hashimoto ,  Koichiro Hattori ,  Hisashi Yamada

IPC分类号： B23H7/04 ,  B23H1/02

CPC分类号： B23H1/022 ,  B23H1/024 ,  B23H7/04

摘要： A wire-discharge machining apparatus controls a short circuit between a wire electrode and a workpiece and wire-breakage, and makes it easy to improve productivity, by performing power supply control to mix an upper-side power supply state in which a high-frequency pulse voltage is applied from an upper-side power supplying unit, a lower-side power supply state in which the high-frequency pulse voltage is applied from a lower-side power supplying unit, and a both-sides power supply state in which the high-frequency pulse voltage is applied to the wire electrode from both power supplying units in synchronization with each other during a period of electric discharge machining.

摘要翻译： 放线加工装置控制线电极和工件之间的短路以及断线，并且通过进行电源控制来容易地提高生产率，以混合高频率的上侧电源状态 从上侧供电单元施加脉冲电压，从下侧供电单元向其施加高频脉冲电压的下侧电源状态，以及双侧供电状态， 在放电加工期间，高频脉冲电压从两个供电单元同时施加到线电极上。

公开(公告)号：US20110057166A1

公开(公告)日：2011-03-10

申请号：US12946683

申请日：2010-11-15

申请人： Hisashi Yamada ,  Kenji Iso ,  Shuji Nakamura

发明人： Hisashi Yamada ,  Kenji Iso ,  Shuji Nakamura

IPC分类号： H01L33/04 ,  B82Y99/00

CPC分类号： H01L33/06 ,  H01L33/16 ,  H01L33/32

摘要： A III-nitride film, grown on an m-plane substrate, includes multiple quantum wells (MQWs) with a barrier thickness of 27.5 nm or greater and a well thickness of 8 nm or greater. An emission wavelength can be controlled by selecting the barrier thickness of the MQWs. Device fabricated using the III-nitride film include nonpolar III-nitride light emitting diodes (LEDs) with a long wavelength emission.

摘要翻译： 在m面衬底上生长的III族氮化物膜包括势垒厚度为27.5nm或更大的阱量子阱和8nm或更大的阱的多个量子阱（MQW）。 可以通过选择MQW的阻挡层厚度来控制发射波长。 使用III族氮化物膜制造的器件包括具有长波长发射的非极性III族氮化物发光二极管（LED）。

公开(公告)号：US07847280B2

公开(公告)日：2010-12-07

申请号：US12189038

申请日：2008-08-08

申请人： Hisashi Yamada ,  Kenji Iso ,  Shuji Nakamura

发明人： Hisashi Yamada ,  Kenji Iso ,  Shuji Nakamura

IPC分类号： H01L31/00

CPC分类号： H01L33/06 ,  H01L33/16 ,  H01L33/32

摘要： A III-nitride film, grown on an m-plane substrate, includes multiple quantum wells (MQWs) with a barrier thickness of 27.5 nm or greater and a well thickness of 8 nm or greater. An emission wavelength can be controlled by selecting the barrier thickness of the MQWs. Device fabricated using the III-nitride film include nonpolar III-nitride light emitting diodes (LEDs) with a long wavelength emission.

摘要翻译： 在m面衬底上生长的III族氮化物膜包括势垒厚度为27.5nm或更大的阱量子阱和8nm或更大的阱的多个量子阱（MQW）。 可以通过选择MQW的阻挡层厚度来控制发射波长。 使用III族氮化物膜制造的器件包括具有长波长发射的非极性III族氮化物发光二极管（LED）。

公开(公告)号：US07795558B2

公开(公告)日：2010-09-14

申请号：US11660698

申请日：2006-04-05

申请人： Yoji Nakajima ,  Hisakatsu Kawarai ,  Syuichiro Ishihara ,  Hisashi Yamada

发明人： Yoji Nakajima ,  Hisakatsu Kawarai ,  Syuichiro Ishihara ,  Hisashi Yamada

IPC分类号： B23H1/10

CPC分类号： B23H1/10 ,  B23H7/36 ,  C02F2001/422 ,  C02F2001/425 ,  C02F2001/427

摘要： In an electric discharge machining apparatus that machines a workpiece (1) by using a water-based dielectric fluid as a dielectric fluid while a voltage is being applied to a machining gap between an electrode (2) and the workpiece (1), the electric discharge machine includes:an anticorrosive power source section (26) that applies a predetermined voltage by taking the workpiece (1) as a cathode and taking as an anode an anticorrosive electrode (25) opposing the workpiece (1) with an insulator (24) therebetween;a dielectric fluid quality measuring instrument (22) that measures a quality of the dielectric fluid; anda dielectric fluid quality control section (16, 17, 18, 19, 20, 21, 23) that controls a pH level of the dielectric fluid to be within a range from 8.5 to 10.5 on the basis of the measured result of the dielectric fluid quality measuring instrument (22).

摘要翻译： 在一种放电加工装置中，通过在电极（2）和工件（1）之间的加工间隙施加电压的同时，通过使用水性介电流体作为介质流体对工件（1）进行加工， 放电机包括：通过将工件（1）作为阴极施加预定电压的防腐电源部分（26），并用绝缘体（24）作为与工件（1）相对的防腐蚀电极（25）作为阳极， 之间; 电介质流体质量测量仪器（22），其测量介电流体的质量; 以及介电液质量控制部（16,17,18,19,20,21,23），其基于所述电介质的测定结果，将所述介质流体的pH值控制在8.5〜10.5的范围内 流体质量测量仪（22）。

公开(公告)号：US07721343B2

公开(公告)日：2010-05-18

申请号：US11263034

申请日：2005-11-01

申请人： Taku Kato ,  Tadashi Kojima ,  Hisashi Yamada ,  Atsushi Ishihara

发明人： Taku Kato ,  Tadashi Kojima ,  Hisashi Yamada ,  Atsushi Ishihara

IPC分类号： G06F7/04 ,  G06F17/30 ,  H04N7/16

CPC分类号： G06F21/10 ,  G11B20/00086 ,  G11B20/00188 ,  G11B20/0021 ,  G11B20/00246 ,  G11B20/00282 ,  G11B20/00304 ,  G11B20/00362 ,  G11B20/00492 ,  G11B20/00768 ,  G11B20/10

摘要： Reinforcement of a system renewability is realized skillfully utilizing properties peculiar to a system. As a result, there is produced such a new effect as to similarly reinforce required specification with respect to copyright protection of a content recorded in a medium for exclusive use in reproduction and a recordable medium. In a system which encrypts information such as a content to record/reproduce the information, design is made so that encryption/decryption processing information differs for a device (software (S/W) main body device) whose main body is software constituted of a recording/reproducing drive of a recording medium and a personal computer (PC), a device (hardware (H/W) main body device) whose main body is hardware integrally containing a drive and data coding/demodulation processing, and the medium for exclusive use in reproduction and the recording medium.

摘要翻译： 利用系统特有的特性巧妙地实现系统可更新性的加强。 结果，产生了一种新的效果，类似地加强了关于在专用于再现的介质和可记录介质中记录的内容的版权保护的所需规格。 在加密诸如内容的信息以记录/再现信息的系统中，进行设计使得其主体是由软件构成的设备（软件（S / W）主体设备）的加密/解密处理信息不同 记录介质和个人计算机（PC）的记录/再现驱动器，其主体是硬件整体地包含驱动和数据编码/解调处理的装置（硬件（H / W）主体装置） 用于再现和记录介质。

公开(公告)号：US20090277876A1

公开(公告)日：2009-11-12

申请号：US11910581

申请日：2006-10-18

申请人： Hisakatsu Kawarai ,  Syuichiro Ishihara ,  Yoji Nakajima ,  Hisashi Yamada

发明人： Hisakatsu Kawarai ,  Syuichiro Ishihara ,  Yoji Nakajima ,  Hisashi Yamada

IPC分类号： B23H1/08

CPC分类号： B23H1/10 ,  B23H1/02 ,  B23H1/08 ,  B23H11/003

摘要： An electrical-discharge machining apparatus for machining a workpiece (1), using an aqueous machining fluid as a machining fluid, while applying voltage across a machining gap formed between an electrode (2) and the workpiece (1), includes: an insulating means (12) for electrically insulating from the workpiece (1) a machine platen (11) where the workpiece is placed; a machining-fluid-property measuring instrument (22) for measuring a state of the machining fluid; and a machining-fluid-property control means (106,107,108,109,110,111,113) for controlling, based on a measured result from the machining-fluid-property measuring instrument (112), the pH of the machining fluid so as to be kept within 8.5 through 10.5.

摘要翻译： 1.一种放电加工装置，其特征在于，在电极（2）与所述工件（1）之间形成的加工间隙上施加电压的同时，使用水性加工液作为机械加工液加工工件（1） （12），用于与工件（1）电绝缘放置工件的机器压板（11）; 用于测量加工流体的状态的加工液体性质测量仪器（22）; 以及用于基于来自所述机械液体性质测量仪器（112）的测量结果控制所述加工液体的pH以保持在8.5至10.5中的加工液性质控制装置（106,107,108,109,110,111,113）。