公开(公告)号：US5973447A

公开(公告)日：1999-10-26

申请号：US901036

申请日：1997-07-25

申请人： Leonard Joseph Mahoney ,  Brian Kenneth Daniels ,  Rudolph Hugo Petrmichl ,  Florian Joseph Fodor ,  Ray Hays Venable, III

发明人： Leonard Joseph Mahoney ,  Brian Kenneth Daniels ,  Rudolph Hugo Petrmichl ,  Florian Joseph Fodor ,  Ray Hays Venable, III

IPC分类号： H05H1/24 ,  C23C14/48 ,  C23C16/26 ,  C23C16/40 ,  C23C16/48 ,  G11B5/84 ,  H01J37/32 ,  H01L21/203 ,  H01L21/265 ,  H01L21/302 ,  H05H1/46 ,  H01J1/52

CPC分类号： H01J27/143

摘要： Plasma beam apparatus and method for the purpose of vacuum processing temperature sensitive materials at high discharge power and high processing rates. A gridless, closed or non-closed Hall-Current ion source is described which features a unique fluid-cooled anode with a shadowed gap through which ion source feed gases are introduced while depositing feed gases are injected into the plasma beam. The shadowed gap provides a well maintained, electrically active area at the anode surface which stays relatively free of non-conductive deposits. The anode discharge region is insulatively sealed to prevent discharges from migrating into the interior of the ion source. Thin vacuum gaps are also used between anode and non-anode components in order to preserve electrical isolation of the anode when depositing conductive coatings. The magnetic field of the Hall-Current ion source is produced by an electromagnet driven either by the discharge current or a periodically alternating current.

摘要翻译： 等离子体束装置和方法，用于真空处理温度敏感材料的高放电功率和高加工速率。 描述了一种无栅，闭合或非闭合的霍尔电流离子源，其特征在于具有阴影间隙的独特的流体冷却阳极，通过该阴极间隙引入离子源进料气体，同时将原料气体注入到等离子体束中。 阴影间隙在阳极表面处提供良好维护的电活性区域，其保持相对不含非导电沉积物。 阳极放电区被绝对密封，以防止放电进入离子源的内部。 在阳极和非阳极组件之间也使用薄的真空间隙，以便在沉积导电涂层时保持阳极的电绝缘。 霍尔电流离子源的磁场由通过放电电流或周期性交流电驱动的电磁体产生。

公开(公告)号：US5888593A

公开(公告)日：1999-03-30

申请号：US631170

申请日：1996-04-12

申请人： Rudolph Hugo Petrmichl ,  Leonard Joseph Mahoney ,  Ray Hays Venable III ,  Norman Donald Galvin ,  Bradley J. Knapp ,  Fred Michael Kimock

发明人： Rudolph Hugo Petrmichl ,  Leonard Joseph Mahoney ,  Ray Hays Venable III ,  Norman Donald Galvin ,  Bradley J. Knapp ,  Fred Michael Kimock

IPC分类号： C23C16/02 ,  C23C16/30 ,  C23C16/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/513 ,  H05H1/20 ,  C23C14/00 ,  H05H1/02 ,  H05H1/24

CPC分类号： C23C16/345 ,  C23C16/0245 ,  C23C16/30 ,  C23C16/308 ,  C23C16/325 ,  C23C16/36 ,  C23C16/513

摘要： An ion beam deposition method is provided for manufacturing a coated substrate with improved wear-resistance, and improved lifetime. The substrate is first chemically cleaned to remove contaminants. Secondly, the substrate is inserted into a vacuum chamber onto a substrate holder, and the air therein is evacuated via pump. Then the substrate surface is bombarded with energetic ions from an ion beam source supplied from inert or reactive gas inlets to assist in removing residual hydrocarbons and surface oxides, and activating the surface. After sputter-etching the surface, a protective, wear-resistant coating is deposited by plasma ion beam deposition where a portion of the precursor gases are introduced into the ion beam downstream of the ion source, and hydrogen is introduced directly into the ion source plasma chamber. The plasma ion beam-deposited coating may contain one or more layers. Once the chosen coating thickness is achieved, deposition is terminated, vacuum chamber pressure is increased to atmospheric and the coated substrate products having wear-resistance greater than glass are removed from the chamber. These coated products may be ceramics, architectural glass, analytical instrument windows, automotive windshields, and laser bar code scanners for use in retail stores and supermarkets.

摘要翻译： 提供了一种离子束沉积方法，用于制造具有改善的耐磨性和改善寿命的涂覆基材。 首先对基材进行化学清洗以除去污染物。 其次，将衬底插入到真空室中到衬底保持器上，并且其中的空气经由泵抽真空。 然后用来自惰性或反应性气体入口的离子束源的能量离子轰击衬底表面，以帮助去除残留的烃和表面氧化物，并激活表面。 在溅射蚀刻表面之后，通过等离子体离子束沉积沉积保护性耐磨涂层，其中一部分前体气体被引入到离子源下游的离子束中，并将氢直接引入离子源等离子体 房间。 等离子体离子束沉积涂层可以包含一层或多层。 一旦实现所选择的涂层厚度，沉积终止，真空室压力增加到大气压，并且具有大于玻璃的耐磨性的涂覆的基底产品从腔室中去除。 这些涂层产品可以是用于零售商店和超市的陶瓷，建筑玻璃，分析仪器窗，汽车挡风玻璃和激光条码扫描仪。

公开(公告)号：US5653812A

公开(公告)日：1997-08-05

申请号：US534188

申请日：1995-09-26

申请人： Rudolph Hugo Petrmichl ,  Ray Hays Venable ,  Rickey Leonard Salter ,  Victor M. Zeeman, Jr.

发明人： Rudolph Hugo Petrmichl ,  Ray Hays Venable ,  Rickey Leonard Salter ,  Victor M. Zeeman, Jr.

IPC分类号： C23C16/02 ,  C23C16/26 ,  C23C16/505 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/042 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/26 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32706 ,  H01J2237/3327

摘要： The invention is a method and apparatus for the RF plasma deposition of diamond-like carbon (DLC) and related hard coatings onto the surface of drills; especially microdrills such as printed circuit board drills and printed wire board drills, using a mounting means connected to a source of capacitively coupled RF power. A key feature of the apparatus is that the drills to be coated are the only negatively biased surfaces in the capacitively-coupled system.According to the method, the surface of the drills to be coated are first chemically de-greased to remove contaminants, and inserted into the electronically masked coating fixture of the present invention. The electronically masked fixture includes the powered electrode, the portion of the drills to be coated, an electrically insulated spacer, and an electrically grounded shield plate. Next, the loaded fixture is placed into a plasma deposition vacuum chamber, and the air in said chamber is evacuated. Gas is added to the vacuum chamber, and a capacitive RF plasma is ignited, causing the surface of the drills to be sputter-etched to remove residual contaminants and surface oxides, and to activate the surface. Following the sputter-etching step, a silicon-containing material layer is deposited by capacitive RF plasma deposition. This silicon-containing material layer may be either an adhesion layer for subsequent deposition of DLC, or may be "Si-doped DLC" ("Si-DLC"). If this silicon-containing layer is an adhesion layer, the next step in the process is deposition of a top layer of either DLC or Si-DLC by capacitive RF plasma deposition.

摘要翻译： 本发明是用于将钻石样碳（DLC）和相关硬涂层的RF等离子体沉积到钻头表面上的方法和装置; 特别是诸如印刷电路板钻头和印刷线路板钻头的微钻头，使用连接到电容耦合RF功率源的安装装置。 该装置的关键特征是要被涂覆的钻头是电容耦合系统中唯一的负偏压表面。 根据该方法，首先将待涂覆的钻头的表面进行化学去油脂以除去污染物，并将其插入到本发明的电子掩模涂料固定装置中。 电子屏蔽固定装置包括动力电极，待涂覆的钻头部分，电绝缘垫片和电接地屏蔽板。 接下来，将装载的夹具放入等离子体沉积真空室中，并将所述室中的空气抽真空。 将气体添加到真空室中，并且点燃电容RF等离子体，使得钻头的表面被溅射蚀刻以除去残留的污染物和表面氧化物，并激活表面。 在溅射蚀刻步骤之后，通过电容RF等离子体沉积沉积含硅材料层。 该含硅材料层可以是用于随后沉积DLC的粘合层，或者可以是“Si掺杂DLC”（“Si-DLC”）。 如果该含硅层是粘附层，则该工艺的下一步骤是通过电容式RF等离子体沉积沉积DLC或Si-DLC的顶层。