公开(公告)号：US07501600B2

公开(公告)日：2009-03-10

申请号：US11058620

申请日：2005-02-15

Applicant: William M. Holber ,  Xing Chen ,  Andrew B. Cowe ,  Matthew M. Besen ,  Ronald W. Collins, Jr. ,  Susan C. Trulli ,  Shouqian Shao

Inventor： William M. Holber ,  Xing Chen ,  Andrew B. Cowe ,  Matthew M. Besen ,  Ronald W. Collins, Jr. ,  Susan C. Trulli ,  Shouqian Shao

IPC: B23K10/00

CPC classification number: H01J37/32357 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32522

Abstract: Plasma ignition and cooling apparatus and methods for plasma systems are described. An apparatus can include a vessel and at least one ignition electrode adjacent to the vessel. A total length of a dimension of the at least one ignition electrode is greater than 10% of a length of the vessel's channel. The apparatus can include a dielectric toroidal vessel, a heat sink having multiple segments urged toward the vessel by a spring-loaded mechanism, and a thermal interface between the vessel and the heat sink. A method can include providing a gas having a flow rate and a pressure and directing a portion of the flow rate of the gas into a vessel channel. The gas is ignited in the channel while the remaining portion of the flow rate is directed away from the channel.

Abstract translation: 描述了等离子体点火和冷却装置和等离子体系统的方法。 装置可以包括容器和与容器相邻的至少一个点火电极。 所述至少一个点火电极的尺寸的总长度大于所述容器通道的长度的10％。 该装置可以包括介质环形容器，具有通过弹簧加载机构朝向容器推动的多个部分的散热器以及容器和散热器之间的热界面。 一种方法可以包括提供具有流速和压力的气体并将气体的一部分流量引导到容器通道中。 气体在通道中被点燃，而流量的剩余部分被引导离开通道。

公开(公告)号：US20060118240A1

公开(公告)日：2006-06-08

申请号：US11003109

申请日：2004-12-03

Applicant: William Holber ,  Xing Chen

Inventor： William Holber ,  Xing Chen

IPC: C23F1/00 ,  H01L21/306

CPC classification number: B01J19/088 ,  B01J2219/0875 ,  C23C16/452 ,  H01J37/32357 ,  H01J37/3244

Abstract: A method and apparatus for activating and dissociating gases involves generating an activated gas with a plasma located in a chamber. A downstream gas input is positioned relative to an output of the chamber to enable the activated gas to facilitate dissociation of a downstream gas introduced by the gas input, wherein the dissociated downstream gas does not substantially interact with an interior surface of the chamber.

公开(公告)号：US06282191B1

公开(公告)日：2001-08-28

申请号：US09371196

申请日：1999-08-10

Applicant: John Cumberton ,  Pasquale Cassella ,  Ramanathan Ramanathan ,  Michael McLoughlin ,  Xing Chen

Inventor： John Cumberton ,  Pasquale Cassella ,  Ramanathan Ramanathan ,  Michael McLoughlin ,  Xing Chen

IPC: H04M700

CPC classification number: H04L29/06 ,  H04L12/4633 ,  H04L12/5601 ,  H04L12/66 ,  H04L69/08 ,  H04L2012/563 ,  H04L2012/5663 ,  H04M7/063 ,  H04M7/1205

Abstract: A SS7 signalling router receives SS7 signalling regarding narrowband calls to be routed over the ATM network. When the SS7 router receives signalling from the SS7 network, it does not process the signalling, but reads the originator point code (OPC) and forwards the signalling via the ATM network to the ATM switch which is attached to the originator of the message. An interworking function (IWF) at the ATM switch processes the SS7 signalling by generating the appropriate ATM signalling to set up a circuit between the originating ATM switch and the destination ATM switch. The IWF at the originating ATM switch also processes the SS7 signalling by returning it to the SS7 router with the destination point code (DPC) of the PSTN switch coupled to the destination ATM switch. When the SS7 router receives an SS7 signalling message from an ATM switch, it forwards it to the SS7 network where it is sent to the DPC. The IWF at each ATM switch is preferably distributed among several processors including a signalling VSM controller (an SVSM), a plurality of VSM controllers and an ISUP controller. SS7 SUs enter the SVSM controller which separates MSUs from FISUs and LSSUs. The MSUs are sent to the ISUP controller which interrogates the CIC of the IAM messages and forwards the IAM information to the appropriate VSM controller for narrowband to broadband conversion.

Abstract translation: SS7信令路由器接收关于通过ATM网络路由的窄带呼叫的SS7信令。 当SS7路由器从SS7网络接收到信令时，它不处理信令，而是读取发起方点号码（OPC），并通过ATM网络将信令转发到附加到消息发起者的ATM交换机。 ATM交换机上的互通功能（IWF）通过生成适当的ATM信令来处理SS7信令，以在始发ATM交换机和目的ATM交换机之间建立电路。 始发ATM交换机上的IWF还通过将PSTN交换机的目的地点码（DPC）耦合到目的地ATM交换机将其返回到SS7路由器来处理SS7信令。 当SS7路由器从ATM交换机接收到SS7信令消息时，将其转发到SS7网络，并将其发送到DPC。 每个ATM交换机上的IWF优选地分布在包括信令VSM控制器（SVSM），多个VSM控制器和ISUP控制器的若干处理器中。 SS7 SU进入SVM控制器，将MSU与FISU和LSSU分离。 MSU被发送到询问IAM消息的CIC的ISUP控制器，并将IAM信息转发到适当的VSM控制器以进行窄带到宽带转换。

公开(公告)号：US06268916B1

公开(公告)日：2001-07-31

申请号：US09310017

申请日：1999-05-11

Applicant: Shing Lee ,  Mehrdad Nikoonahad ,  Xing Chen

Inventor： Shing Lee ,  Mehrdad Nikoonahad ,  Xing Chen

IPC: G01J400

CPC classification number: G01N21/211 ,  G01B11/065 ,  G01J4/00

Abstract: The surface of a doped semiconductor wafer is heated locally by means of a pump beam whose intensity is modulated at a first frequency. The heated area is sampled by a probe beam whose intensity is modulated at a second frequency. After the probe beam has been modulated (reflected or transmitted) at the first frequency by the wafer, the modulated probe beam is detected at a frequency equal to the difference between the harmonics of the first and second frequencies to determine dose of the dopants in the wafer. Such or similar type of instrument for measuring dose may be combined with an ellipsometer, reflectometer or polarimeter for measuring dose as well as thickness(es) and/or indices of refraction in a combined instrument for measuring the same sample.

Abstract translation: 掺杂半导体晶片的表面通过其强度以第一频率调制的泵浦光束被局部加热。 加热区域由其强度以第二频率调制的探测光束进行采样。 在探测光束已经被晶片以第一频率调制（反射或传输）之后，以等于第一和第二频率的谐波之间的差异的频率来检测调制的探测光束，以确定在 晶圆。 用于测量剂量的这种或类似类型的仪器可以与用于测量相同样品的组合仪器中的用于测量剂量以及厚度和/或折射率的椭偏仪，反射计或偏振计组合。

公开(公告)号：US6051114A

公开(公告)日：2000-04-18

申请号：US880467

申请日：1997-06-23

Applicant: Tse-Yong Yao ,  Zheng Xu ,  Kenny King-tai Ngan ,  Xing Chen ,  John Urbahn ,  Lawrence P. Bourget

Inventor： Tse-Yong Yao ,  Zheng Xu ,  Kenny King-tai Ngan ,  Xing Chen ,  John Urbahn ,  Lawrence P. Bourget

IPC: C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01L21/768

CPC classification number: H01L21/2855 ,  C23C14/046 ,  C23C14/34 ,  C23C14/357 ,  H01J37/32623 ,  H01J37/32678 ,  H01J37/32706 ,  H01J37/34 ,  H01L21/76877

Abstract: The present invention provides a method and apparatus for preferential PVD conductor fill in an integrated circuit structure. The present invention utilizes a high density plasma for sputter deposition of a conductive layer on a patterned substrate, and a pulsed DC power source capacitively coupled to the substrate to generate an ion current at the surface of the substrate. The ion current prevents sticking of the deposited material to the field areas of the patterned substrate, or etches deposited material from the field areas to eliminate crowning or cusping problems associated with deposition of a conductive material in a trench, hole or via formed on the substrate.

Abstract translation: 本发明提供了一种用于集成电路结构中优先PVD导体填充的方法和装置。 本发明利用高密度等离子体在图案化衬底上溅射沉积导电层，以及电容耦合到衬底的脉冲DC电源，以在衬底的表面产生离子电流。 离子电流防止沉积的材料粘附到图案化衬底的场区域，或者蚀刻从场区域沉积的材料，以消除与在衬底上形成的沟槽，孔或通孔中的导电材料的沉积相关的凸起或弯曲问题 。

公开(公告)号：US5998620A

公开(公告)日：1999-12-07

申请号：US45803

申请日：1998-03-23

Applicant: Xing Chen ,  Marc Poirier ,  Yee-Shing Wong ,  Guang-Zhong Wu

Inventor： Xing Chen ,  Marc Poirier ,  Yee-Shing Wong ,  Guang-Zhong Wu

IPC: C07D221/16 ,  C07D401/04 ,  C07D221/06

CPC classification number: C07D401/04 ,  C07D221/16

Abstract: The invention relates to a process for preparing a compound of the formula ##STR1## comprising reacting a bromo-substituted pyridine with an amine of the formula NHR.sup.5 R.sup.6, reacting the resulting amide with an iodo-halomethyl-substituted compound and cyclizing the resultant product, wherein R, R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are as defined in the specification; also claimed are a compound of the formula ##STR2## and a process for preparing it from the corresponding halo-substituted benzoic acid.

Abstract translation: 本发明涉及一种制备下式化合物的方法，其中包括使溴取代的吡啶与式NHR 5 R 6的胺反应，使得到的酰胺与碘代卤代甲基取代的化合物反应，并使得到的产物环化，其中R，R 1 R2，R3和R4如说明书中所定义; 还要求的是下式的化合物及其由相应的卤代取代的苯甲酸制备的方法。

公开(公告)号：US5886171A

公开(公告)日：1999-03-23

申请号：US864529

申请日：1997-05-28

Applicant: Guang-Zhong Wu ,  Xing Chen ,  Yee-Shing Wong ,  Doris P. Schumacher ,  Martin Steinman

Inventor： Guang-Zhong Wu ,  Xing Chen ,  Yee-Shing Wong ,  Doris P. Schumacher ,  Martin Steinman

IPC: C07D205/08

CPC classification number: C07D205/08

Abstract: The invention relates to a process for producing a compound of the formula ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 are as defined in the specification, which comprises the steps of: (a) reacting a lactone with an imine to obtain a chiral diol of the formula IV; (b) oxidizing the diol to obtain an aldehyde of formula V; (c) condensing the aldehyde with an enolether followed by dehydration to obtain a compound of formula VI; (d) hydrogenating the compound of formula VI to obtain a ketone of formula VII; and (e) chirally catalytically reducing the ketone, wherein steps (b)-(d) are shown in the following reaction scheme: ##STR2##

Abstract translation: 本发明涉及一种制备下式化合物的方法，其中R 1，R 2和R 3如说明书中所定义，其包括以下步骤：（a）使内酯与亚胺反应，得到手性二醇 公式IV; （b）氧化二醇以获得式V的醛; （c）将醛与烯醇缩合，然后脱水得到式VI化合物; （d）使式Ⅵ化合物氢化得到式Ⅶ的酮; 和（e）手性催化还原酮，其中步骤（b） - （d）显示在以下反应方案中：

公开(公告)号：US5792522A

公开(公告)日：1998-08-11

申请号：US715109

申请日：1996-09-18

Applicant: Shu Jin ,  Xiao Chun Mu ,  Xing Chen ,  Lawrence Bourget

Inventor： Shu Jin ,  Xiao Chun Mu ,  Xing Chen ,  Lawrence Bourget

IPC: C23C14/04 ,  C23C14/35 ,  H01L21/768 ,  H05H1/30

CPC classification number: H01L21/2855 ,  C23C14/046 ,  C23C14/357 ,  H01J37/32192 ,  H01J37/32678 ,  H01J37/34 ,  H01L21/76877 ,  H01J2237/3325

Abstract: A method for forming a material in an opening on a substrate, such as a wafer, using an electron cyclotron resonance-assisted high density plasma physical vapor deposition system. The method comprises the steps of: maintaining a pressure in the range of approximately 1 mTorr to approximately 6 mTorr; generating a plasma by providing a microwave power in the range of approximately 3 kilowatts (kW) to approximately 5 kW; applying a direct current (DC) voltage to a target source of the material in the range of approximately (negative) -600 volts to approximately -1000 volts; providing a current of a predetermined amount to a first electromagnet; and providing a current to a second electromagnet that is less than said predetermined amount, wherein said second electromagnet is disposed below said first electromagnet; and forming a layer of the material in the opening.

Abstract translation: 使用电子回旋共振辅助的高密度等离子体物理气相沉积系统在诸如晶片的基板上的开口中形成材料的方法。 该方法包括以下步骤：保持约1mTorr至约6mTorr范围内的压力; 通过提供在约3千瓦（kW）至约5kW的范围内的微波功率产生等离子体; 在大约（负）-600伏至大约-1000伏的范围内向材料的目标源施加直流（DC）电压; 向第一电磁体提供预定量的电流; 并且向第二电磁体提供小于所述预定量的电流，其中所述第二电磁体设置在所述第一电磁体下方; 并在开口中形成一层材料。

公开(公告)号：US5760232A

公开(公告)日：1998-06-02

申请号：US882753

申请日：1997-06-16

Applicant: Xing Chen ,  Marc Poirier ,  Yee-Shing Wong ,  Guang-Zhong Wu

Inventor： Xing Chen ,  Marc Poirier ,  Yee-Shing Wong ,  Guang-Zhong Wu

IPC: C07D401/04 ,  C07D221/16

CPC classification number: C07D401/04

Abstract: The invention relates to a process for preparing a compound of the formula ##STR1## comprising: (a) reacting 2,5-dibromo-3-methylpyridine with an amine of the formula NHR.sup.5 R.sup.6 to obtain an amide; (b) reacting the amide with a compound of formula 3 ##STR2## in the presence of a strong base to obtain a compound of formula 4 ##STR3## (c) converting a compound of formula 4 to the corresponding cyano compound or aldehyde; (d) reacting the cyano compound or aldehyde with a piperidine derivative to obtain an aldehyde or alcohol of formula 7a or 7b, respectively: ##STR4## (e) cyclizing a compound of formula 7a or 7b; wherein R.sup.1 -R.sup.7 are as defined in the specification.

Abstract translation: 本发明涉及制备式I化合物的方法，其包括：（a）使2,5-二溴-3-甲基吡啶与式NHR 5 R 6的胺反应，得到酰胺; （b）在强碱存在下使酰胺与式3化合物反应，得到式4化合物（c）将式4的化合物转化成相应的氰基化合物或醛 ; （d）使氰基化合物或醛与哌啶衍生物反应，分别得到式7a或7b的醛或醇：（e）使式7a或7b的化合物环化; 其中R1-R7如说明书中所定义。

公开(公告)号：US20160237675A1

公开(公告)日：2016-08-18

申请号：US14622413

申请日：2015-02-13

Applicant: Xing Chen

Inventor： Xing Chen

IPC: E04B1/343 ,  A63B71/02

CPC classification number: A63B71/02 ,  A63H33/008

Abstract: A modular game field bunker system comprises a plurality of interlocking frame pieces and a cover having an aesthetic feature disposed on at least an outer surface thereof. The interlocking frame pieces may be coupled together to form a structure having at least one wall. The structure preferably is fully enclosed by its walls and has an interior region defined therein for receiving a human player. The cover receives and fully covers the structure, and may partially define a doorway for entering and exiting the structure. The aesthetic feature of the cover may make the bunker appear in any of a variety of desired ways so as to customizably match a desired design scenario of the game field.

Abstract translation: 模块化游戏场地掩体系统包括多个互锁框架件和具有设置在其至少外表面上的美学特征的盖。 互锁框架件可以联接在一起以形成具有至少一个壁的结构。 该结构优选地被其壁完全包围并且具有限定在其中的用于接收人类玩家的内部区域。 盖子接收并完全覆盖结构，并且可以部分地限定用于进入和离开结构的门口。 封面的美学特征可以使掩体以任何各种期望的方式出现，以便可定制地匹配游戏场的期望的设计场景。