Charged Particle Beam Device
    71.
    发明申请
    Charged Particle Beam Device 有权
    带电粒子束装置

    公开(公告)号:US20150136979A1

    公开(公告)日:2015-05-21

    申请号:US14407117

    申请日:2013-04-12

    Abstract: When a signal electron is detected by energy selection by combining and controlling retarding and boosting for observation of a deep hole, etc., the only way for focus adjustment is to use a change in magnetic field of an objective lens. However, since responsiveness of the change in magnetic field is poor, throughput reduces. A charged particle beam device includes: an electron source configured to generate a primary electron beam; an objective lens configured to focus the primary electron beam; a deflector configured to deflect the primary electron beam; a detector configured to detect a secondary electron or a reflection electron generated from a sample by irradiation of the primary electron beam; an electrode having a hole through which the primary electron beam passes; a voltage control power supply configured to apply a negative voltage to the electrode; and a retarding voltage control power supply configured to generate an electric field, which decelerates the primary electron beam, on the sample by applying the negative voltage to the sample, wherein the charged particle beam device performs focus adjustment while an offset between the voltage applied to the electrode and the voltage applied to the sample is being kept constant.

    Abstract translation: 当通过组合并控制用于观察深孔等的延迟和升压来进行能量选择来检测信号电子时,聚焦调整的唯一方式是使用物镜的磁场变化。 然而,由于磁场变化的响应性差,吞吐量降低。 带电粒子束装置包括:电子源,被配置为产生一次电子束; 配置成聚焦一次电子束的物镜; 偏转器,被配置为偏转所述一次电子束; 检测器,被配置为通过一次电子束的照射来检测从样品产生的二次电子或反射电子; 具有一次电子束通过的孔的电极; 电压控制电源,被配置为向所述电极施加负电压; 以及延迟电压控制电源,被配置为通过向样本施加负电压来产生使样品上的一次电子束减速的电场,其中带电粒子束装置执行焦点调整,同时施加到 施加到样品的电极和电压保持恒定。

    SCANNING ELECTRON BEAM DEVICE AND DIMENSION MEASUREMENT METHOD USING SAME
    72.
    发明申请
    SCANNING ELECTRON BEAM DEVICE AND DIMENSION MEASUREMENT METHOD USING SAME 有权
    扫描电子束装置和尺寸测量方法

    公开(公告)号:US20140339425A1

    公开(公告)日:2014-11-20

    申请号:US14364392

    申请日:2012-11-26

    Abstract: A scanning electron beam device having: a deflector (5) for deflecting an electron beam (17) emitted from an electron source (1); an objective lens (7) for causing the electron beam to converge; a retarding electrode; a stage (9) for placing a wafer (16); and a controller (15); wherein the stage can be raised and lowered. In the low acceleration voltage region, the controller performs rough adjustment and fine adjustment of the focus in relation to the variation in the height of the wafer using electromagnetic focusing performed through excitation current adjustment of the objective lens. In the high acceleration voltage region, the controller performs rough adjustment of the focus in relation to the variation in the height of the wafer by mechanical focusing performed through raising and lowering of the stage, and performs fine adjustment by electrostatic focusing performed through adjustment of the retarding voltage. It thereby becomes possible to provide a scanning electron beam device that measures, in a highly accurate manner, both the upper part and the bottom part of a groove or a hole having a high aspect ratio.

    Abstract translation: 一种扫描电子束装置,具有:用于偏转从电子源(1)发射的电子束(17)的偏转器(5)。 用于使电子束会聚的物镜(7); 延迟电极; 用于放置晶片(16)的平台(9); 和控制器(15); 其中可以升高和降低载物台。 在低加速度电压区域中,控制器使用通过物镜的激励电流调节执行的电磁聚焦,相对于晶片的高度变化而进行粗略调整和微调。 在高加速电压区域中,控制器通过机架上升和下降进行机械聚焦,进行相对于晶片高度变化的聚焦的粗略调整,通过调整 延迟电压。 从而可以提供一种以高度准确的方式测量具有高纵横比的凹槽或孔的上部和底部两者的扫描电子束装置。

    Substrate-examining apparatus
    74.
    发明申请
    Substrate-examining apparatus 审中-公开
    基板检查装置

    公开(公告)号:US20090278045A1

    公开(公告)日:2009-11-12

    申请号:US12230555

    申请日:2008-08-29

    Abstract: The invention provides a substrate-examining apparatus which is capable of measuring the detailed shape of a contact hole and the state of a hole bottom. A substrate-examining apparatus includes an electron source (21) for generating an electron beam, a deflector (22) for irradiating a surface of a substrate to be examined with the electron beam from the electron source so as to scan the electron beam, and substrate current detecting means for detecting a current caused to flow from the substrate to a reference potential portion of the apparatus. This apparatus characteristically includes an arithmetic operation processor (50), based on a deflection signal from the deflector (22) and a signal of the detected substrate current, for extracting a substrate current signal from a contact hole portion and a substrate current signal from a portion other than the contact hole portion from the signal of the detected substrate current, calculating amounts of respective currents, thereby displaying a state of the contact hole.

    Abstract translation: 本发明提供了能够测量接触孔的详细形状和孔底的状态的基板检查装置。 基板检查装置包括用于产生电子束的电子源(21),用于从电子源用电子束照射待检查基板的表面以扫描电子束的偏转器(22),以及 衬底电流检测装置,用于检测从衬底流到设备的参考电位部分的电流。 该装置特征性地包括算术运算处理器(50),其基于来自偏转器(22)的偏转信号和检测到的衬底电流的信号,用于从接触孔部分提取衬底电流信号和来自 检测到的基板电流的信号以外的接触孔部分以外的部分,计算各个电流的量,从而显示接触孔的状态。

    Hole Inspection Apparatus and Hole Inspection Method using the Same
    75.
    发明申请
    Hole Inspection Apparatus and Hole Inspection Method using the Same 有权
    孔检查装置及孔检查方法采用该方法

    公开(公告)号:US20090152461A1

    公开(公告)日:2009-06-18

    申请号:US12295770

    申请日:2007-04-03

    Applicant: Ho Seob Kim

    Inventor: Ho Seob Kim

    Abstract: Disclosed herein is an apparatus and method for inspecting the via holes of a semiconductor device using electron beams. The apparatus includes electron beam irradiation means, a current measuring means, and a current measuring means and data processing means. The electron beam irradiation means radiate respective electron beams to inspect a plurality of inspection target holes. The current measuring means measures current, which is generated by irradiating the electron beams, radiated from the electron beam irradiation means, through a conductive layer located under the holes, or through the conductive layer and a separate detector. The data processing means processes data acquired through the measurement of the current measuring means.

    Abstract translation: 本发明公开了一种使用电子束检查半导体器件的通孔的装置和方法。 该装置包括电子束照射装置,电流测量装置以及电流测量装置和数据处理装置。 电子束照射装置照射各个电子束来检查多个检查目标孔。 电流测量装置测量通过从电子束照射装置辐射的电子束通过位于孔下面的导电层或通过导电层和单独的检测器照射而产生的电流。 数据处理装置处理通过测量当前测量装置获得的数据。

    CHARGED PARTICLE BEAM APPARATUS
    77.
    发明申请
    CHARGED PARTICLE BEAM APPARATUS 有权
    充电颗粒光束装置

    公开(公告)号:US20090001279A1

    公开(公告)日:2009-01-01

    申请号:US12163121

    申请日:2008-06-27

    Applicant: Atsushi KOBARU

    Inventor: Atsushi KOBARU

    Abstract: A charged particle beam apparatus for measuring and inspecting a sample having some parts in focus and other parts out of focus in an image due to the effect of the roughness of the sample surface is disclosed, in which in order to acquire a clear image of the whole or a predetermined area in the image, the focus adjustment conditions for each point in the area to be scanned by the charged particle beam are determined in advance, and the focus adjustment conditions thus determined are applied selectively to the patterns formed under the same fabrication conditions as the sample for which the focus adjustment conditions are determined.

    Abstract translation: 公开了一种带电粒子束装置,用于测量和检查由于样品表面的粗糙度的影响而在图像中具有焦点部分和其他部分焦点的样品的样品,其中为了获得样品表面的清晰图像 整个或预定区域,预先确定要由被带电粒子束扫描的区域中的每个点的焦点调整条件,并且将如此确定的聚焦调节条件选择性地施加到在相同制造下形成的图案 作为确定焦点调整条件的样本的条件。

    Electronically-variable immersion electrostatic lens
    78.
    发明授权
    Electronically-variable immersion electrostatic lens 有权
    电子可变浸没静电透镜

    公开(公告)号:US07446320B1

    公开(公告)日:2008-11-04

    申请号:US11260586

    申请日:2005-10-26

    Abstract: One embodiment relates to an electronically-variable electrostatic immersion lens in an electron beam apparatus. The electrostatic immersion lens includes a top electrode configured with a first voltage applied thereto, an upper bottom electrode configured with a second voltage applied thereto, and a lower bottom electrode configured with a third voltage applied thereto. The third voltage is controlled separately from the second voltage. Other embodiments are also disclosed.

    Abstract translation: 一个实施例涉及电子束装置中的电子可变静电浸没透镜。 静电浸没透镜包括配置有施加到其上的第一电压的上电极,施加有第二电压的上底电极,以及施加有第三电压的下底电极。 第三电压与第二电压分开控制。 还公开了其他实施例。

    Contact opening metrology
    79.
    发明授权
    Contact opening metrology 失效
    联系开放计量

    公开(公告)号:US07381978B2

    公开(公告)日:2008-06-03

    申请号:US11051339

    申请日:2005-02-03

    Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

    Abstract translation: 一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层,在通过蚀刻工艺生产第二层中的接触开口之后,接触开口包括多个 测试孔具有不同的相应的横向尺寸。 带电粒子的束被引导以照射测试孔。 响应于光束,测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个,从而产生蚀刻指示符信号。 作为测试开口的横向尺寸的函数分析蚀刻指示符信号,以便评估蚀刻工艺的特性。

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