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    Machine, Program Product, and Computer-Implemented Method to Simulate Reservoirs as 2.5D Unstructured Grids
    71.
    发明申请
    Machine, Program Product, and Computer-Implemented Method to Simulate Reservoirs as 2.5D Unstructured Grids 有权
    机器，程序产品和计算机实现的模拟水库作为2.5D非结构化网格的方法

    公开(公告)号：US20110313745A1

    公开(公告)日：2011-12-22

    申请号：US12820936

    申请日：2010-06-22

    Applicant: Mokhles M. Mezghani ,  Larry S. Fung

    Inventor： Mokhles M. Mezghani ,  Larry S. Fung

    IPC: G06G7/48

    CPC classification number: G06K19/07345 ,  G01V99/00 ,  G01V2210/663 ,  G06K19/07318 ,  G06T17/05 ,  G06T17/20 ,  H05K1/0254 ,  H05K1/0373 ,  H05K2201/0738

    Abstract: Example embodiments utilize machines to model reservoir geometry having geological layers as 2.5D unstructured grids. Example embodiments include program products to simulate a reservoir by generating a reservoir data system, performing a numerical fluid flow simulation, and visualizing the simulation. Data system embodiments include data structures to model a reservoir geometry as laterally unstructured two-dimensional (2D) grids and associated layer depths defining z-lines to thereby define a 2.5D unstructured grid, including datasets for: vertices of the grid cells for the future grid top and bottom surfaces, a number and listing of vertices for each grid cell, cell center coordinates, and vertex adjacency information using a compressed sparse row format. Computer-implemented methods include projecting external and internal boundaries onto a future grid surface; generating 2D unstructured, e.g., Voronoi, grids, for the top and bottom surfaces; and generating z-lines of depths corresponding to reservoir layers to thereby generate 2.5D unstructured grids.

    Abstract translation: 示例性实施例利用机器将具有地质层的储层几何形状建模为2.5D非结构化网格。 示例性实施例包括通过产生储层数据系统来模拟储层的程序产品，执行数值流体流动模拟和可视化模拟。 数据系统实施例包括将储层几何模型化为横向非结构化二维（2D）网格和定义z线的相关层深度的数据结构，从而定义2.5D非结构化网格，包括用于将来的网格单元的顶点的数据集 网格顶部和底部表面，使用压缩稀疏行格式的每个网格单元的顶点的数量和列表，单元格中心坐标和顶点邻接信息。 计算机实现的方法包括将外部和内部边界投射到未来的网格表面; 产生用于顶表面和底表面的2D非结构化的，例如Voronoi，网格; 并生成对应于储层的深度的z行，从而产生2.5D非结构化网格。

    Devices and system for electrostatic discharge suppression
    72.
    发明授权
    Devices and system for electrostatic discharge suppression 失效
    用于静电放电抑制的装置和系统

    公开(公告)号：US08045312B2

    公开(公告)日：2011-10-25

    申请号：US12477790

    申请日：2009-06-03

    Applicant: Karen P. Shrier

    Inventor： Karen P. Shrier

    IPC: H02H1/00

    CPC classification number: H05K1/0256 ,  H01C7/10 ,  H01C7/13 ,  H01C7/18 ,  H01L2224/48091 ,  H01L2924/00014 ,  H05K1/0259 ,  H05K1/167 ,  H05K1/185 ,  H05K3/429 ,  H05K2201/0738 ,  H01L2224/45099

    Abstract: In one embodiment, there is provided a printed circuit board including a first rigid circuit board layer having a first signal trace arrayed on it, a second rigid circuit board layer having a second signal trace arrayed on it, a first signal path coupled between the first signal trace and the second signal trace, an electrostatic discharge device located between the first rigid circuit board layer and the second rigid circuit board layer, the electrostatic discharge device having a first electrode coupled to the first signal path, an electrostatic discharge reactance layer coupled to the first electrode, and a second electrode coupled to the electrostatic discharge layer but not coupled to the first signal path. The circuit board also having a ground plane, where the ground plane is coupled to the second electrode.

    Abstract translation: 在一个实施例中，提供了一种印刷电路板，其包括具有排列在其上的第一信号迹线的第一刚性电路板层，具有排列在其上的第二信号迹线的第二刚性电路板层，耦合在第一 信号迹线和第二信号迹线，位于第一刚性电路板层和第二刚性电路板层之间的静电放电装置，静电放电装置具有耦合到第一信号路径的第一电极，静电放电电抗层耦合到 第一电极和耦合到静电放电层但不耦合到第一信号路径的第二电极。 电路板还具有接地平面，其中接地平面耦合到第二电极。

    MULTI-LAYER SEMICONDUCTOR ELEMENT PACKAGE STRUCTURE WITH SURGE PROTECTION FUNCTION AND METHOD FOR MANUFACTURING THE SAME
    73.
    发明申请
    MULTI-LAYER SEMICONDUCTOR ELEMENT PACKAGE STRUCTURE WITH SURGE PROTECTION FUNCTION AND METHOD FOR MANUFACTURING THE SAME 有权
    具有防护功能的多层半导体元件封装结构及其制造方法

    公开(公告)号：US20110220402A1

    公开(公告)日：2011-09-15

    申请号：US12777596

    申请日：2010-05-11

    Applicant: Wei-Kuang FANG

    Inventor： Wei-Kuang FANG

    IPC: H05K1/16 ,  H05K3/00

    CPC classification number: H01L23/49805 ,  H01L23/62 ,  H01L25/162 ,  H01L2924/0002 ,  H05K1/0254 ,  H05K1/185 ,  H05K2201/0738 ,  H05K2201/09181 ,  H05K2201/10174 ,  H01L2924/00

    Abstract: A multi-layer semiconductor element package structure with surge protection function includes a substrate unit, an insulated unit, a one-way conduction unit and a protection unit. The substrate unit has at least one top substrate, at least one middle substrate and at least one bottom substrate. The insulated unit has at least one first insulated layer filled between the top substrate and the middle substrate and at least one second insulated layer filled between the middle substrate and the bottom substrate. The one-way conduction unit has a plurality of one-way conduction elements electrically disposed between the top substrate and the middle substrate and enclosed by the first insulated layer. The protection unit has at least one protection element with anti surge current or anti surge voltage function electrically disposed between the middle substrate and the bottom substrate and enclosed by the second insulated layer.

    Abstract translation: 具有浪涌保护功能的多层半导体元件封装结构包括基板单元，绝缘单元，单向导通单元和保护单元。 衬底单元具有至少一个顶部衬底，至少一个中间衬底和至少一个底部衬底。 绝缘单元具有填充在顶部基板和中间基板之间的至少一个第一绝缘层和填充在中间基板和底部基板之间的至少一个第二绝缘层。 单向导通单元具有电气设置在顶部基板和中间基板之间并被第一绝缘层包围的多个单向导电元件。 保护单元具有至少一个具有防浪涌电流或抗浪涌电压功能的保护元件，电气设置在中间基板和底部基板之间并由第二绝缘层包围。

    Substrates Having Voltage Switchable Dielectric Materials
    75.
    发明申请
    Substrates Having Voltage Switchable Dielectric Materials 有权
    具有可切换电介质材料的基板

    公开(公告)号：US20110132647A1

    公开(公告)日：2011-06-09

    申请号：US12976236

    申请日：2010-12-22

    Applicant: Shurui Shang ,  Robert Fleming

    Inventor： Shurui Shang ,  Robert Fleming

    IPC: H05K1/00 ,  H05K3/00

    CPC classification number: H05K1/0271 ,  H05K1/0259 ,  H05K1/036 ,  H05K1/0373 ,  H05K3/0005 ,  H05K2201/068 ,  H05K2201/0738 ,  H05K2201/09136 ,  Y10T29/49124

    Abstract: Various aspects provide for incorporating a VSDM into a substrate to create an ESD-protected substrate. In some cases, a VSDM is incorporated in a manner that results in the ESD-protected substrate meeting one or more specifications (e.g., thickness, planarity, and the like) for various subsequent processes or applications. Various aspects provide for designing a substrate (e.g., a PCB) incorporating a VSDM, and adjusting one or more aspects of the substrate to design a balanced, ESD-protected substrate. Certain embodiments include molding a substrate having a VSDM layer into a first shape.

    Abstract translation: 各种方面提供将VSDM结合到基底中以产生受ESD保护的基底。 在一些情况下，以导致ESD保护的衬底满足用于各种后续处理或应用的一个或多个规格（例如，厚度，平面度等）的方式结合VSDM。 各种方面提供了设计包含VSDM的衬底（例如，PCB），以及调整衬底的一个或多个方面以设计平衡的，受ESD保护的衬底。 某些实施方案包括将具有VSDM层的基底模制成第一形状。

    Methods for Fabricating Current-Carrying Structures Using Voltage Switchable Dielectric Materials
    76.
    发明申请
    Methods for Fabricating Current-Carrying Structures Using Voltage Switchable Dielectric Materials 失效
    使用可开关电介质材料制造电流承载结构的方法

    公开(公告)号：US20110061230A1

    公开(公告)日：2011-03-17

    申请号：US12953158

    申请日：2010-11-23

    Applicant: Lex Kosowsky

    Inventor： Lex Kosowsky

    IPC: H01R43/00

    CPC classification number: H05K1/0254 ,  C25D5/54 ,  H05K1/0373 ,  H05K1/167 ,  H05K3/188 ,  H05K3/423 ,  H05K3/426 ,  H05K2201/0215 ,  H05K2201/0738 ,  H05K2203/105 ,  Y10T29/49117 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49155

    Abstract: A method includes providing a voltage switchable dielectric material having a characteristic voltage, exposing the voltage switchable dielectric material to a source of ions associated with an electrically conductive material, and creating a voltage difference between the source and the voltage switchable dielectric material that is greater than the characteristic voltage. Electrical current is allowed to flow from the voltage switchable dielectric material, and the electrically conductive material is deposited on the voltage switchable dielectric material. A body comprises a voltage switchable dielectric material and a conductive material deposited on the voltage switchable dielectric material using an electrochemical process. In some cases, the conductive material is deposited using electroplating.

    Abstract translation: 一种方法包括提供具有特征电压的电压可切换电介质材料，将电压可切换电介质材料暴露于与导电材料相关的离子源，并且产生电源和可切换电介质材料之间的电压差大于 特征电压。 允许电流从电压可切换介电材料流出，并且导电材料沉积在可开关电介质材料上。 身体包括电​​压可​​切换电介质材料和使用电化学过程沉积在可开关电介质材料上的导电材料。 在一些情况下，使用电镀沉积导电材料。

    COMPONENTS HAVING VOLTAGE SWITCHABLE DIELECTRIC MATERIALS
    79.
    发明申请
    COMPONENTS HAVING VOLTAGE SWITCHABLE DIELECTRIC MATERIALS 有权
    具有电压可切换介质材料的组件

    公开(公告)号：US20100243302A1

    公开(公告)日：2010-09-30

    申请号：US12731557

    申请日：2010-03-25

    Applicant: Lex Kosowsky ,  Bhret Graydon ,  Robert Fleming

    Inventor： Lex Kosowsky ,  Bhret Graydon ,  Robert Fleming

    IPC: H05K1/11 ,  H05K1/09

    CPC classification number: H05K1/0257 ,  H01C1/142 ,  H01C1/148 ,  H01C7/1006 ,  H05K1/0259 ,  H05K1/0373 ,  H05K1/167 ,  H05K2201/0738

    Abstract: Various aspects provide for structures and devices to protect against spurious electrical events (e.g., electrostatic discharge). Some embodiments incorporate a voltage switchable dielectric material (VSDM) bridging a gap between two conductive pads. Normally insulating, the VSDM may conduct current from one pad to the other during a spurious electrical event (e.g., shunting current to ground). Some aspects include gaps having a gap width that is greater than 50% of a spacing between electrical leads connected to the pads. Some devices include single layers of VSDM. Some devices include multiple layers of VSDM. Various devices may be designed to increase a ratio of active volume (of VSDM) to inactive volume.

    Abstract translation: 各种方面提供了用于防止假电气事件（例如静电放电）的结构和装置。 一些实施例包括桥接两个导电焊盘之间的间隙的可开关电介质材料（VSDM）。 通常绝缘，VSDM可能在杂散电气事件（例如，将电流分流到地）期间将电流从一个焊盘传导到另一个焊盘。 一些方面包括间隙宽度大于连接到焊盘的电引线间距的50％的间隙。 一些设备包括VSDM的单层。 一些设备包括多层VSDM。 可以设计各种设备以增加活动体积（VSDM）与非活动体积的比率。

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