公开(公告)号：US06902458B2

公开(公告)日：2005-06-07

申请号：US10755890

申请日：2004-01-12

Applicant: Zhizhang Chen ,  Michael David Bic ,  Ronald L. Enck ,  Michael J. Regan ,  Thomas Novet ,  Paul J. Benning

Inventor： Zhizhang Chen ,  Michael David Bic ,  Ronald L. Enck ,  Michael J. Regan ,  Thomas Novet ,  Paul J. Benning

IPC: G11C13/04 ,  H01J1/312 ,  H01J9/02 ,  H01J19/24 ,  H01J21/06 ,  H01J29/04 ,  H01J31/12 ,  H01L29/06 ,  H01J9/04

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022

Abstract: An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract translation: 发射体具有形成在电子供给层上的电子供给层和硅基电介质层。 硅基电介质层优选小于约500埃。 可选地，在电子供给层上形成绝缘体层，并且限定了形成硅基电介质层的开口。 在硅基电介质层上形成阴极层，以提供电子和/或光子能量发射的表面。 优选地，对发射极进行退火处理，从而增加从电子供给层隧穿到阴极层的电子的供应。

公开(公告)号：US06887725B2

公开(公告)日：2005-05-03

申请号：US10667517

申请日：2003-09-23

Applicant: Shunri Oda ,  Xinwei Zhao ,  Katsuhiko Nishiguchi

Inventor： Shunri Oda ,  Xinwei Zhao ,  Katsuhiko Nishiguchi

IPC: H01J1/312 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/203 ,  H01L21/205 ,  H01L29/66 ,  H01L29/80 ,  H01L21/00 ,  H01J1/30

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/027

Abstract: A micro electron gun that is capable of extracting electrons from a semiconductor utilizing a quantum size effect and that can be mounted individually for each of pixels is disclosed, as well as a picture display apparatus using such electron guns which is high in quantum efficiency, of high brightness and thin, as well as methods of manufacture thereof. Conduction electrons from a n-type semiconductor substrate (2) are accelerated under an electric field through a layer or layers (4) of quantum size effect micro particles (3) formed on surfaces of the n-type semiconductor substrate (2) and passed therethrough without undergoing phonon scattering, so that they when arriving at an electrode (5) may possess an amount of energy not less than the work function of the electrode (5) and are thus allowed to spring out into a vacuum. Such a quantum size effect micro particle (3) comprises a micro particle of a single crystal semiconductor in a nanometer order having electron energy levels made so discrete that no phonon scattering is brought about, and on its surface area an insulator so thin that an electron is capable of tunneling therethrough.

Abstract translation: 公开了能够利用量子尺寸效应从半导体中提取电子并且可以针对每个像素单独安装的微电子枪，以及使用这样的量子效率高的电子枪的图像显示装置， 高亮度和薄，以及其制造方法。 来自n型半导体衬底（2）的传导电子在电场下通过形成在n型半导体衬底（2）的表面上的量子尺寸效应微粒（3）的层（4）加速并通过 从而使其在到达电极（5）时可能具有不小于电极（5）的功函数的能量，并因此允许弹出到真空中。 这样的量子尺寸效应微粒（3）包括纳米级的单晶半导体微粒子，其具有使得离散的电子能级不能产生声子散射，并且在其表面积上具有如此薄的绝缘体 能穿过隧道。

公开(公告)号：US20050073233A1

公开(公告)日：2005-04-07

申请号：US10730754

申请日：2003-12-08

Applicant: Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

IPC: G09G3/22 ,  H01J1/312 ,  H01J31/12 ,  H01J63/02 ,  H01J1/38

CPC classification number: B82Y10/00 ,  G09G3/22 ,  H01J1/312 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/3125

Abstract: An electron emitter has an emitter made of a dielectric material, and an upper electrode and a lower electrode to which a drive voltage is applied to emit electrons. The upper electrode is formed on a first surface of the substance serving as the emitter, and the lower electrode is formed on a second surface of the substance serving as the emitter. The upper electrode has a plurality of through regions through which the emitter is exposed. The upper electrode has a surface which faces the emitter in peripheral portions of the through regions and which is spaced from the emitter.

Abstract translation: 电子发射体具有由介电材料制成的发射体，以及施加驱动电压以发射电子的上电极和下电极。 上电极形成在用作发射极的物质的第一表面上，下电极形成在用作发射体的物质的第二表面上。 上部电极具有多个贯通区域，发射体通过该区域露出。 上电极具有与通孔的周边部分中的发射极相对的表面，并且与发射极间隔开。

公开(公告)号：US20050062400A1

公开(公告)日：2005-03-24

申请号：US10405978

申请日：2003-04-02

Applicant: Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada

IPC: H01J1/30 ,  H01J1/312 ,  H01J1/32 ,  H01J1/62 ,  H01J63/04

CPC classification number: B82Y10/00 ,  H01J1/30 ,  H01J1/312 ,  H01J1/32

Abstract: An electron emitter has an anode electrode formed on a substrate, an electric field receiving member formed on the substrate to cover the anode electrode, and a cathode electrode formed on the electric field receiving member. The cathode electrode is supplied with a drive signal from a pulse generation source, and the anode electrode is connected to an anode potential generation source (GND in this example). A collector electrode is provided above the cathode electrode, and the collector electrode is coated with a fluorescent layer. The collector electrode is connected to a collector potential generation source (Vc in this example) through a resistor.

Abstract translation: 电子发射体具有在基板上形成的阳极电极，形成在基板上的覆盖阳极电极的电场接收部件和形成在电场接收部件上的阴极电极。 向阴极提供来自脉冲发生源的驱动信号，并且阳极电极连接到阳极电位产生源（在该示例中为GND）。 集电极设置在阴极电极的上方，集电极涂覆有荧光层。 集电极通过电阻连接到集电极电位产生源（在本例中为Vc）。

公开(公告)号：US20050051764A1

公开(公告)日：2005-03-10

申请号：US10656635

申请日：2003-09-04

Applicant: Huei-Pei Kuo ,  Xia Sheng ,  Henryk Birecki ,  Si-Ty Lam ,  Steven Naberhuis

Inventor： Huei-Pei Kuo ,  Xia Sheng ,  Henryk Birecki ,  Si-Ty Lam ,  Steven Naberhuis

IPC: H01J1/312 ,  H01J9/02 ,  H01L29/06

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/025

Abstract: A method is presented for forming pores within a central area of a semi-conductive or conductive surface. The method includes forming a semi-conductive or conductive surface on a substrate. This semi-conductive or conductive surface is formed in a manner ensuring that upon application of an electric field at the semi-conductive or conductive surface an intensity of the electric field at a central area of the surface is at least as great as an intensity of the electric field at a perimeter of the surface. Finally, the method includes anodizing the semi-conductive or conductive surface by generating the electric field at the semi-conductive or conductive surface to form a porous region within the semi-conductive or conductive surface.

Abstract translation: 提出了一种用于在半导体或导电表面的中心区域内形成孔的方法。 该方法包括在衬底上形成半导体或导电表面。 这种半导体或导电表面以确保在半导体或导电表面上施加电场的方式形成，表面中心区域处的电场的强度至少等于 表面周边的电场。 最后，该方法包括通过在半导体或导电表面处产生电场来在半导体或导电表面内形成多孔区域来阳极氧化半导体或导电表面。

公开(公告)号：US06847045B2

公开(公告)日：2005-01-25

申请号：US09975297

申请日：2001-10-12

Applicant: Viatcheslav V. Ossipov ,  Alexandre M. Bratkovski ,  Henryk Birecki

Inventor： Viatcheslav V. Ossipov ,  Alexandre M. Bratkovski ,  Henryk Birecki

IPC: H01J1/308 ,  H01J1/312 ,  H01L29/06 ,  H01L29/12

CPC classification number: B82Y10/00 ,  H01J1/308 ,  H01J1/312

Abstract: A cold electron emitter may include a heavily a p-doped semiconductor, and dielectric layer, and a metallic layer (p-D-M structure). A modification of this structure includes a heavily n+ doped region below the p region (n+-p-D-M structure). These structures make it possible to combine high current emission with stable (durable) operation. The high current density is possible since under certain voltage drop across the dielectric layer, effective negative electron affinity is realized for the quasi-equilibrium “cold” electrons accumulated in the depletion layer in the p-region next to the dielectric layer. These electrons are generated as a result of the avalanche in the p-D-M structure or injection processes in the n+-p-D-M structure. These emitters are stable since they make use of relatively low extracting field in the vacuum region and are not affected by contamination and absorption from accelerated ions. In addition, the structures may be fabricated with current state-of-the-art technology.

Abstract translation: 冷电子发射器可以包括大量p掺杂的半导体和介电层，以及金属层（p-D-M结构）。 该结构的修改包括p区下面的n +掺杂区域（n + -p-D-M结构）。 这些结构使得可以将高电流发射与稳定（耐用）操作相结合。 高电流密度是可能的，因为在电介质层两端的某些电压降下，实现了与介质层相邻的p区中累积在耗尽层中的准平衡“冷”电子的有效负电子亲和力。 这些电子是由于p-D-M结构中的雪崩或n + -p-D-M结构中的注入过程而产生的。 这些发射体是稳定的，因为它们在真空区域中使用相对低的提取场，并且不受加速离子的污染和吸收的影响。 此外，结构可以用当前最先进的技术制造。

公开(公告)号：US6157145A

公开(公告)日：2000-12-05

申请号：US117441

申请日：1998-07-30

Applicant: Frank Vollkommer ,  Lothar Hitzschke

Inventor： Frank Vollkommer ,  Lothar Hitzschke

IPC: H01J1/312 ,  H01J61/54 ,  H01J11/04

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J61/545 ,  H01J2201/306

Abstract: A method of operating cold cathode in discharge lamps, including discharge lamps operating with a dielectrically hindered discharge that include two electroconducive electrodes facing each other between which a ferro-electric material is sandwiched. At least one of the electrodes presents one or more openings. When the cathode is operating, a voltage of quickly alternating polarity is applied to both electrodes, thereby freeing electrons on the surface of the ferro-electric material. The working voltage of the discharge lamp causes an acceleration of said electrons, which pass through the openings towards the anode and are used for igniting the discharge lamp and keeping it in an operating mode.

Abstract translation: PCT No.PCT / DE97 / 02881 Sec。 371日期：1998年7月30日 102（e）日期1998年7月30日PCT 1997年12月10日PCT PCT。 公开号WO98 / 26447 日期1998年6月18日在放电灯中操作冷阴极的方法，包括以介电阻碍放电操作的放电灯，其包括彼此面对的两个电导电极，夹在铁电材料之间。 电极中的至少一个具有一个或多个开口。 当阴极工作时，对两个电极施加快速交替极性的电压，从而释放铁电材料表面上的电子。 放电灯的工作电压导致所述电子的加速，其通过开口朝向阳极，并用于点燃放电灯并保持其处于工作模式。

公开(公告)号：US6066922A

公开(公告)日：2000-05-23

申请号：US131222

申请日：1998-08-07

Applicant: Shingo Iwasaki ,  Kiyohide Ogasawara ,  Takamasa Yoshikawa ,  Takashi Chuman ,  Nobuyasu Negishi ,  Hiroshi Ito ,  Atsushi Yoshizawa ,  Takashi Yamada ,  Shuuichi Yanagisawa ,  Kazuto Sakemura

Inventor： Shingo Iwasaki ,  Kiyohide Ogasawara ,  Takamasa Yoshikawa ,  Takashi Chuman ,  Nobuyasu Negishi ,  Hiroshi Ito ,  Atsushi Yoshizawa ,  Takashi Yamada ,  Shuuichi Yanagisawa ,  Kazuto Sakemura

IPC: H01J1/312 ,  H01J29/04 ,  H01J31/12 ,  G09G3/10

CPC classification number: B82Y10/00 ,  H01J1/312

Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has at a film thickness of 50 nm or greater and a field-stabilizing layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Abstract translation: 电子发射装置表现出高电子发射效率。 该装置包括金属或半导体的电子供应层，形成在电子供应层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。 绝缘体层的膜厚为50nm以上，场稳定层。 当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。

公开(公告)号：US6008502A

公开(公告)日：1999-12-28

申请号：US945877

申请日：1997-11-03

Applicant: Masahiro Deguchi ,  Akio Hiraki ,  Toshimichi Ito ,  Akimitsu Hatta ,  Nobuhiro Eimori ,  Makoto Kitabatake

Inventor： Masahiro Deguchi ,  Akio Hiraki ,  Toshimichi Ito ,  Akimitsu Hatta ,  Nobuhiro Eimori ,  Makoto Kitabatake

IPC: H01J1/312 ,  H01L29/06 ,  H01L29/12

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J2201/30457

Abstract: The present invention provides an electron emitting device for efficiently emitting electron beams by applying a forward bias to an MIS, pn, and a pin structure using a diamond layer so as to supply electrons from an electron supply layer to a p-type diamond layer. Furthermore, the present invention provides a method for easily and efficiently performing important production processes for producing a highly efficient electron emitting device having a diamond layer and controlling a surface state of the diamond layer. A multi-layer structure including an electrode layer, an electron supply layer and a diamond layer is used as the structure thereof. Alternatively, the electron affinity state of the surface of the diamond layer is arbitrarily controlled by a method such as ultraviolet ray irradiation.

Abstract translation: PCT No.PCT / JP97 / 01031 Sec。 371日期：1997年11月3日 102（e）日期1997年11月3日PCT 1997年3月26日PCT公布。 公开号WO97 / 36309 日期1997年10月2日本发明提供了一种电子发射器件，用于通过使用金刚石层向MIS，pn和引脚结构施加正向偏压来有效地发射电子束，以便将电子从电子供给层提供给p 型金刚石层。 此外，本发明提供了一种方法，用于容易且有效地执行用于制造具有金刚石层并控制金刚石层的表面状态的高效电子发射器件的重要生产方法。 使用包括电极层，电子供给层和金刚石层的多层结构作为其结构。 或者，通过紫外线照射等方法任意地控制金刚石层的表面的电子亲合性。

公开(公告)号：US5952772A

公开(公告)日：1999-09-14

申请号：US10063

申请日：1998-01-21

Applicant: Neil Anthony Fox ,  Wang Nang Wang

Inventor： Neil Anthony Fox ,  Wang Nang Wang

IPC: H01J1/308 ,  H01J1/304 ,  H01J1/312 ,  H01J17/06 ,  H01J61/067 ,  H01J63/02 ,  H01J63/08 ,  H01J29/46

CPC classification number: H01J1/304 ,  H01J17/066 ,  H01J61/0677 ,  H01J2201/30457 ,  H01J61/78

Abstract: An electron emitter (2) has a semiconductor substrate (20) doped with an n-type region (21). A diamond layer (24) is doped by ion implantation with a p-type dopant to form a graded dopant profile region (27) that increases away from the upper surface of the diamond layer (24) and a thin insulating region (28) separating the p-type region (27) from the n-type region (21). The emitter (2) has a first electrical contact (23) on a lower surface of the substrate (20) and a second electrical contact (25) on the upper surface of the diamond layer (24) such that a voltage can be applied across the emitter (2) to cause tunneling of electrons from the n-type region (21) through the insulating region (28) into the p-type region (27), causing emission of electrons from an exposed surface (29). A lamp or display (1) includes several such electron emitters (2) and contains gas at reduced pressure, which is ionized by the emitted electrons, thereby generating UV radiation, which causes a fluorescent layer (5) on a transparent window (3) to produce visible light.

Abstract translation: 电子发射体（2）具有掺杂有n型区域（21）的半导体衬底（20）。 金刚石层（24）通过用p型掺杂剂的离子注入掺杂以形成从金刚石层（24）的上表面增加的渐变掺杂物分布区域（27）和分离的薄绝缘区域（28） 来自n型区域（21）的p型区域（27）。 发射极（2）在衬底（20）的下表面上具有第一电接触（23），并且在金刚石层（24）的上表面上具有第二电接触（25），使得可跨越 所述发射极（2）使电子从所述n型区域（21）穿过所述绝缘区域（22）穿透到所述p型区域（27）中，从而暴露出来的表面（29）发射电子。 灯或显示器（1）包括几个这样的电子发射器（2），并且包含减压的气体，其被发射的电子电离，从而产生紫外线辐射，其在透明窗口（3）上引起荧光层（5） 以产生可见光。