公开(公告)号：US20210296075A1

公开(公告)日：2021-09-23

申请号：US17338933

申请日：2021-06-04

申请人： mi2-factory GmbH

发明人： Florian KRIPPENDORF ,  Constantin CSATO

IPC分类号： H01J37/05 ,  C23C14/18 ,  C23C14/48 ,  H01J37/147 ,  H01J37/20 ,  H01J37/317 ,  H01L21/04 ,  H01L29/32

摘要： A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.

公开(公告)号：US11120965B2

公开(公告)日：2021-09-14

申请号：US16703478

申请日：2019-12-04

申请人： ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH

发明人： Benjamin John Cook ,  Eoin Horgan

IPC分类号： H01J37/00 ,  H01J37/04 ,  H01J37/147 ,  H01J37/244

摘要： A beam blanking device for a multi-beamlet charged particle beam apparatus is provided. The beam blanking device includes a first blanking unit, a second blanking unit and a third blanking unit. The first blanking unit includes a first blanking electrode and a first aperture. The second blanking unit includes a second blanking electrode and a second aperture. The third blanking unit includes a third blanking electrode and a third aperture. The beam blanking device includes a common electrode forming a first counter electrode for the first blanking electrode, a second counter electrode for the second blanking electrode and a third counter electrode for the third blanking electrode. The first blanking unit, the second blanking unit and the third blanking unit are arranged in a planar array and define a plane of the planar array. The first blanking electrode is arranged for generating a first electric field between the first blanking electrode and the common electrode in the first aperture for deflecting a first beamlet of the multi-beamlet charged particle beam apparatus into a first deflection direction. The second blanking electrode is arranged for generating a second electric field between the second blanking electrode and the common electrode in the second aperture for deflecting a second beamlet of the multi-beamlet charged particle beam apparatus into a second deflection direction. The third blanking electrode is arranged for generating a third electric field between the third blanking electrode and the common electrode in the third aperture for deflecting a third beamlet of the multi-beamlet charged particle beam apparatus into a third deflection direction. A dividing plane intersecting the planar array separates the first blanking unit from the second blanking unit and the third blanking unit, wherein the first deflection direction, the second deflection direction and the third deflection direction point away from the dividing plane.

公开(公告)号：US20210265130A1

公开(公告)日：2021-08-26

申请号：US17252997

申请日：2018-06-22

申请人： Hitachi High-Tech Corporation

发明人： Asako KANEKO ,  Hisayuki TAKASU

IPC分类号： H01J37/20 ,  H01J37/305 ,  H01J37/08 ,  H01J37/09 ,  H01J37/147

摘要： An ion milling device capable of high-speed milling is realized even for a specimen containing a material having an imide bond. Therefore, the ion milling device includes: a vacuum chamber 6 configured to hold a specimen 3 in a vacuum atmosphere; an ion gun 1 configured to irradiate the specimen with a non-focused ion beam 2; a vaporization container 17 configured to store a mixed solution 13 of a water-soluble ionic liquid and water; and nozzles 11, 12 configured to supply water vapor obtained by vaporizing the mixed solution to a vicinity of a surface of the specimen processed by the ion beam.

公开(公告)号：US11087956B2

公开(公告)日：2021-08-10

申请号：US16453767

申请日：2019-06-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shih-Wei Hung ,  Jang Jung Lee

IPC分类号： H01J37/244 ,  H01J37/147 ,  H01L21/67 ,  H01L21/66 ,  G01Q60/40

摘要： A semiconductor metrology tool for analyzing a sample is disclosed. The semiconductor metrology tool includes a particle generation system, a local electrode, a particle capture device, a position detector, and a processor. The particle generation system is configured to remove a particle from a sample. The local electrode is configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode. The particle capture device is configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture. The position detector is configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle. The processor is configured to identify the removed particle based on the flight time.

公开(公告)号：US11087955B2

公开(公告)日：2021-08-10

申请号：US16939706

申请日：2020-07-27

申请人： Carl Zeiss MultiSEM GmbH

发明人： Dirk Zeidler ,  Michael Schall ,  Joerg Jacobi ,  Michel Le Maire

IPC分类号： H01J37/22 ,  H01J37/10 ,  H01J37/147 ,  H01J37/244 ,  H01J37/28

摘要： A system combination includes a particle beam system and a light-optical system. The particle beam system can be an individual particle beam system or a multiple particle beam system. A light entry mechanism can provided at a branching site of a beam tube arrangement within a beam switch. A light beam of the light-optical system can enter into the beam tube arrangement through the light entry mechanism such that the light beam impinges, in substantially collinear fashion with particle radiation, on an object to be inspected. Parts of the light-optical beam path and parts of the particle-optical beam path can extend parallel to one another or overlap with one another. This arrangement can allow light of the light-optical system to be incident in perpendicular fashion on an object to be inspected, optionally without impairing the particle-optical resolution of the particle beam system.

公开(公告)号：US20210233738A1

公开(公告)日：2021-07-29

申请号：US17230650

申请日：2021-04-14

申请人： Hitachi High-Technologies Corporation

发明人： Yuta Kawamoto ,  Akira IKEGAMI ,  Yasushi EBIZUKA ,  Nobuo FUJINAGA

IPC分类号： H01J37/153 ,  H01J37/10 ,  H01J37/147

摘要： An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens (7) configured to focus a beam emitted from a charged particle source and irradiate a specimen, a visual field movement deflector (5 and 6) configured to deflect an arrival position of the beam with respect to the specimen, and an aberration correction unit (3 and 4) disposed between the visual field movement deflector and the charged particle source, in which the aberration correction unit is configured to suppress a change in the arrival position of the beam irradiated under different beam irradiation conditions.

公开(公告)号：US20210233737A1

公开(公告)日：2021-07-29

申请号：US15734845

申请日：2018-06-04

申请人： Hitachi High-Tech Corporation

发明人： Yu YAMAZAWA

IPC分类号： H01J37/147 ,  H01J37/28 ,  H01J37/141 ,  H01J37/153

摘要： In an electron beam apparatus performing angular scanning that changes an incident angle of an electron beam incident at a predetermined incident position on a sample, when a correction coil is provided in a gap portion of a yoke (magnetic path) of an objective lens, spherical aberration can be corrected by following a deflection signal even if a deflection frequency increases. Therefore, a main control unit that controls an electron optical system sets predetermined phase change amounts a, b with respect to control of a scanning coil in control of the correction coil, and the predetermined phase change amounts a, b are made different depending on a plurality of scanning modes having different scanning speeds.

公开(公告)号：US11056311B2

公开(公告)日：2021-07-06

申请号：US16552991

申请日：2019-08-27

申请人： ASML Netherlands B.V.

发明人： Chih-Yu Jen ,  Long Ma ,  Yongjun Wang ,  Jun Jiang

IPC分类号： H01J37/147 ,  H01J37/26 ,  H01J37/30 ,  G01N21/95 ,  G01N21/88 ,  H01J37/153 ,  H01J37/18

摘要： An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

公开(公告)号：US11049689B2

公开(公告)日：2021-06-29

申请号：US16559459

申请日：2019-09-03

申请人： ASML Netherlands B.V.

发明人： Ehud Shaked ,  Martinus Maassen

IPC分类号： H01J37/26 ,  H01J37/28 ,  H01J37/24 ,  H01J37/14 ,  H01J37/04 ,  H01J37/244 ,  H01J37/147

摘要： Systems and methods for conducting charged particle beam modulation are disclosed. According to certain embodiments, a charged particle beam apparatus generates a plurality of charged particle beams. A modulator may be configured to receive the plurality of charged particle beams and generate a plurality of modulated charged particle beams. A detector may be configured to receive the plurality of modulated charged particle beams.

公开(公告)号：US20210193436A1

公开(公告)日：2021-06-24

申请号：US17102551

申请日：2020-11-24

申请人： NuFlare Technology, Inc.

发明人： Tomoo MOTOSUGI

IPC分类号： H01J37/317 ,  H01J37/302 ,  H01J37/147 ,  H01J37/20

摘要： In one embodiment, a settling time determination method includes deflecting a charged particle beam by applying a voltage outputted from an amplifier to a first deflector while changing a deflection settling time, and writing an evaluation pattern, measuring a position of the evaluation pattern, and determining a position displacement amount of the measured position from a design position, performing fitting of the position displacement amount for the deflection settling time on a first output waveform of the amplifier, and determining a deflection settling time in which the position displacement amount is within a predetermined range.