Abstract:
In conjunction with a wiring in a house carrying data network signal, a modular outlet (100) includes a base module (100a) and interface module (100b). The base module connects to the wiring and is attached to the surface of a building. The interface module provides a data unit connection. The interface module is mechanically attached to the base module and electrically connected thereto. The wiring may also carry basic service signal such as telephone, electrical power and cable television (CATV). In such a case, the outlet provides the relevant connectivity either as part of the base module or as part of the interface module. Both proprietary and industry standard interfaces can be used to interconnect the module. Furthermore, a standard computer expansion card (such as PCI, PCMCIA and alike) may be used as interface module.
Abstract:
A method and system for high speed testing of memories in a multi-device system, where individual devices of the multi-device system are arranged in a serial interconnected configuration. High speed testing is achieved by first writing test pattern data to the memory banks of each device of the multi-device system, followed by local test read-out and comparison of the data in each device. Each device generates local result data representing the absence or presence of a failed bit position in the device. Serial test circuitry in each device compares the local result data with global result data from a previous device. The test circuitry compresses this result of this comparison and provides it to the next device as an updated global result data. Hence, the updated global result data will represent the local result data of all the previous devices.
Abstract:
An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element. A second layer comprising the second chemical element can be formed on the interface layer. The first layer might not substantially contain the second chemical element, the second layer might not substantially contain the first chemical element, or both. An apparatus can include a first layer containing a first chemical element, an interface layer chemisorbed on the first layer, and a second layer containing a second element on the interface layer. The interface layer can contain at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element.
Abstract:
A semiconductor memory circuit, comprising: a memory array, the memory array including a plurality of wordlines each connected to a respective row of cells and a plurality of bitlines each connected to a respective column of cells. The semiconductor memory circuit also comprises at least one row decoder for selecting a group of wordlines within the plurality of wordlines; and a plurality of driver circuits for driving the plurality of bitlines respectively and setting the cells connected to the group of wordlines to a predetermined logic state. Also, a method for presetting at least part of a memory array, the memory array comprising a plurality of wordlines each connected to a respective row of cells. The method comprises selecting a group of wordlines within the plurality of wordlines; and simultaneously setting memory cells connected to the group of wordlines to a predetermined logic state.
Abstract:
An optical mode converter has a coupling waveguide and a receiving waveguide. The coupling waveguide has at an input end a first effective refractive index and includes a tapered core of a substantially constant refractive index with a substantially square cross section at the input end, which has a size that tapers down moving away from the input end. The coupling waveguide also has a cladding at least partially surrounding the tapered core. The receiving waveguide has a second effective refractive index at an output end and includes a core of a substantially constant refractive index greater than the refractive index of the tapered core of the coupling waveguide and a cladding at least partially surrounding the core. A side surface of the tapered core of the coupling waveguide is optically in contact, in a coupling portion, with the receiving waveguide so as to allow optical coupling between the coupling waveguide and the receiving waveguide. The refractive index of the tapered core of the coupling waveguide is selected so that the first effective refractive index and the second effective refractive index differ from each other in absolute value less than 30% of the difference between the core refractive index and the effective refractive index of the receiving waveguide.
Abstract:
A memory system comprises a memory including a plurality of bits arranged as one or more words. Each bit in each word is capable of being programmed either to a particular logical state or to another logical state. A variable data width controller is in communication with the memory. The variable data width controller comprises an adder to determine a programming number of bits in a word to be programmed into a memory. Each bit to be programmed is in the particular logical state. A partitioning block divides the word in to two or more sub-words when the programming number exceeds a maximum number. A switch is in communication with the partitioning block. The switch sequentially provides one or more write pulses. Each write pulse enables a separate communication path between the memory and one of the word and the sub-words.
Abstract:
A delay locked loop operates over a wide range of frequencies and has high accuracy, small silicon area usage, low power consumption and a short lock time. The DLL combines an analog domain and a digital domain. The digital domain is responsible for initial lock and operational point stability and is frozen after the lock is reached. The analog domain is responsible for normal operation after lock is reached and provides high accuracy using smaller silicon area and low power.
Abstract:
Bridge device architecture for connecting discrete memory devices is disclosed. A bridge device is used in conjunction with a composite memory device including at least one discrete memory device. The bridge device comprises a local control interface connected to the at least one discrete memory device, a local input/output interface connected to the at least one discrete memory device, and a global input/output interface interposed between the local control interface and the local input/output interface. The global input/output interface receives and provides global memory control signals and also receives and provides write data to and read data from the at least one discrete memory device.
Abstract:
A dual function memory device architecture compatible with asynchronous operation and synchronous serial operation. The dual function memory device architecture includes one set of physical ports having two different functional assignments. Coupled between the physical ports and core circuits of the memory device are asynchronous and synchronous input and output signal paths or circuits. The signal paths include shared or dedicated buffers coupled to the ports, asynchronous and synchronous command decoders, a network of switches, and a mode detector. The mode detector determines the operating mode of the dual function memory device from a port, and provides the appropriate switch selection signal. The network of switches routes the input or output signals through the asynchronous or synchronous circuits in response to the switch selection signal. The appropriate command decoder interprets the input signals and provides common control logic with the necessary signals for initiating the corresponding operation.
Abstract:
A dynamic random access memory device includes a plurality of memory subblocks. Each subblock has a plurality of wordlines whereto a plurality of data store cells are connected. Partial array self-refresh (PASR) configuration settings are independently made. In accordance with the PASR settings, the memory subblocks are addressed for refreshing. The PASR settings are made by a memory controller. Any kind of combinations of subblock addresses may be selected. Thus, the memory subblocks are fully independently refreshed. User selectable memory arrays for data retention provide effective memory control programming especially for low power mobile application.