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公开(公告)号：US07535933B2
公开(公告)日：2009-05-19
申请号：US11327213
申请日：2006-01-05
申请人： Jared LeVan Zerbe , Kevin S. Donnelly , Stefanos Sidiropoulos , Donald C. Stark , Mark A. Horowitz , Leung Yu , Roxanne Vu , Jun Kim , Bruno W. Garlepp , Tsyr-Chyang Ho , Benedict Chung-Kwong Lau
发明人： Jared LeVan Zerbe , Kevin S. Donnelly , Stefanos Sidiropoulos , Donald C. Stark , Mark A. Horowitz , Leung Yu , Roxanne Vu , Jun Kim , Bruno W. Garlepp , Tsyr-Chyang Ho , Benedict Chung-Kwong Lau
IPC分类号： H04J3/06
CPC分类号： G06F13/364 , G06F1/10 , G06F3/061 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F13/1689 , G06F13/1694 , G06F13/404 , G06F13/4243 , G06F13/4282 , G06F2212/7201 , G06F2212/7207 , G11C7/1045 , H04L7/0008 , H04L7/033
摘要： A system includes a first integrated circuit device and a second integrated circuit device. The first device transmits a data sequence to the second integrated circuit device, and the second device samples the data sequence to produce receiver data. The second device then transmits the receiver data back to the first device. Within the first integrated circuit device, a comparison between the data sequence and the receiver data is performed, and based on the comparison, the first device generates information representative of a calibrated timing offset. The first device uses the information representative of the calibrated timing offset to adjust timing associated with transferring write data from the first integrated circuit to the second integrated circuit.
摘要翻译： 一种系统包括第一集成电路装置和第二集成电路装置。 第一设备将数据序列发送到第二集成电路设备，并且第二设备对数据序列进行采样以产生接收机数据。 然后，第二设备将接收机数据发送回第一设备。 在第一集成电路装置内，执行数据序列与接收机数据之间的比较，并且基于比较，第一装置产生表示经校准的定时偏移的信息。 第一设备使用代表校准的定时偏移的信息来调整与从第一集成电路向第二集成电路传送写入数据相关联的定时。
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82.发明授权Asynchronous, high-bandwidth memory component using calibrated timing elements 失效异步高带宽内存组件使用校准的时序元素公开(公告)号：US07529141B2
公开(公告)日：2009-05-05
申请号：US12041594
申请日：2008-03-03
IPC分类号： G11C7/00
CPC分类号： G11C7/1051 , G11C7/04 , G11C7/1039 , G11C7/106 , G11C7/1078 , G11C7/1087 , G11C7/22 , G11C29/02 , G11C29/028 , G11C29/50012 , G11C2207/2254
摘要： Disclosed herein are embodiments of an asynchronous memory device that use internal delay elements to enable memory access pipelining. In one embodiment, the delay elements are responsive to an input load control signal, and are calibrated with reference to periodically received timing pulses. Different numbers of the delay elements are configured to produce different asynchronous delays and to strobe sequential pipeline elements of the memory device.
摘要翻译： 这里公开了使用内部延迟元件来启用存储器访问流水线的异步存储器件的实施例。 在一个实施例中，延迟元件响应于输入负载控制信号，并且参考周期性接收的定时脉冲进行校准。 不同数量的延迟元件被配置为产生不同的异步延迟并选择存储器件的顺序流水线元件。
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83.发明授权Integrated circuit memory device having delayed write timing based on read response time 有权具有基于读取响应时间的延迟写入定时的集成电路存储器件公开(公告)号：US07496709B2
公开(公告)日：2009-02-24
申请号：US11953803
申请日：2007-12-10
申请人： Richard M. Barth , Frederick A. Ware , Donald C. Stark , Craig E. Hampel , Paul G. Davis , Abhijit M. Abhyankar , James A. Gasbarro , David Nguyen
发明人： Richard M. Barth , Frederick A. Ware , Donald C. Stark , Craig E. Hampel , Paul G. Davis , Abhijit M. Abhyankar , James A. Gasbarro , David Nguyen
IPC分类号： G06F12/00
CPC分类号： G11C7/22 , G11C7/1006 , G11C7/12 , G11C8/12 , G11C8/18 , G11C11/406 , G11C11/40611 , G11C11/4076 , G11C11/4093 , G11C11/4096 , G11C2207/2218
摘要： An integrated circuit memory device includes a memory core to store write data, a first set of interconnect resources to receive the write data, and a second set of interconnect resources to receive a write command associated with the write data. Information indicating whether mask information is included with the write command, wherein the mask information, when included in the write command, specifies whether to selectively write portions of the write data to the memory core.
摘要翻译： 集成电路存储器件包括用于存储写入数据的存储器核心，用于接收写入数据的第一组互连资源以及用于接收与写入数据相关联的写入命令的第二组互连资源。 指示掩码信息是否包括在写入命令中的信息，其中当包括在写入命令中时，掩码信息指定是否选择性地将写入数据的部分写入存储器核心。
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公开(公告)号：US07397725B2
公开(公告)日：2008-07-08
申请号：US11320602
申请日：2005-12-30
申请人： Donald C. Stark
发明人： Donald C. Stark
IPC分类号： G11C8/00
CPC分类号： G11C7/222 , G06F13/4217 , G11C7/1072 , G11C7/22
摘要： A signaling system includes a signaling path, a master device coupled to the signaling path, a slave device coupled to the signaling path, and a clock generator. The slave device includes timing circuitry to generate an internal clock signal having a phase offset relative to a clock signal supplied by the clock generator, the phase offset being determined at least in part by a signal propagation time on the signal path.
摘要翻译： 信令系统包括信令路径，耦合到信令路径的主设备，耦合到信令路径的从设备和时钟发生器。 从设备包括定时电路，用于产生具有相对于由时钟发生器提供的时钟信号的相位偏移的内部时钟信号，相位偏移至少部分地由信号路径上的信号传播时间确定。
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公开(公告)号：US07360050B2
公开(公告)日：2008-04-15
申请号：US11681375
申请日：2007-03-02
申请人： Richard M. Barth , Frederick A. Ware , Donald C. Stark , Craig E. Hampel , Paul G. Davis , Abhijit M. Abhyankar , James A. Gasbarro , David Nguyen
发明人： Richard M. Barth , Frederick A. Ware , Donald C. Stark , Craig E. Hampel , Paul G. Davis , Abhijit M. Abhyankar , James A. Gasbarro , David Nguyen
IPC分类号： G06F12/00
CPC分类号： G11C7/22 , G11C7/1006 , G11C7/12 , G11C8/12 , G11C8/18 , G11C11/406 , G11C11/40611 , G11C11/4076 , G11C11/4093 , G11C11/4096 , G11C2207/2218
摘要： An integrated circuit memory device has a first set of pins to receive, using a clock signal, a row address followed by a column address. The device has a second set of pins to receive, using the clock signal, a sense command and a write command. The sense command specifies that the device activate a row of memory cells identified by the row address. The write command specifies that the memory device receive write data and store the write data at a location, identified by the column address, in the row of memory cells. The write command is posted internally to the memory device after a first delay has transpired from a first time period in which the write command is received at the second set of pins. The write data is received at a third set of pins after a second delay has transpired from the first time period.
摘要翻译： 集成电路存储器件具有第一组引脚，以使用时钟信号接收行地址，后跟列地址。 器件具有第二组引脚，用于使用时钟信号接收检测命令和写入命令。 sense命令指定设备激活由行地址标识的一行存储器单元。 write命令指定存储器件接收写入数据，并将写入数据存储在由列地址标识的存储单元行中的位置。 在从第二组引脚接收写入命令的第一时间段开始第一个延迟之后，将写入命令内部发布到存储器件。 在从第一时间段开始第二延迟之后，在第三组引脚处接收写入数据。
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公开(公告)号：US07091761B2
公开(公告)日：2006-08-15
申请号：US11148783
申请日：2005-06-08
IPC分类号： H03K5/12
CPC分类号： H03K17/164 , G11C7/1051 , H03K19/00384
摘要： An output driver has an output multiplexor and an output current driver. The output multiplexor receives a data signal and outputs a q-node signal. The output current 5 river receives the q-node signal and drives a bus based on the q-node signal. The output multiplexor processes the data signal in various ways to generate the q-node signal. The output current driver is responsive to current control bits to select a amount of output drive current. In addition, the output multiplexor is controlled such that the output impedance of the output current driver is maintained within a predetermined range.
摘要翻译： 输出驱动器具有输出多路复用器和输出电流驱动器。 输出多路复用器接收数据信号并输出q-节点信号。 输出电流5河接收q节点信号，并根据q-节点信号驱动总线。 输出多路复用器以各种方式处理数据信号以产生q-结点信号。 输出电流驱动器响应于当前控制位以选择输出驱动电流的量。 此外，控制输出多路复用器，使得输出电流驱动器的输出阻抗保持在预定范围内。
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公开(公告)号：US06708248B1
公开(公告)日：2004-03-16
申请号：US09457155
申请日：1999-12-08
申请人： Billy Wayne Garrett, Jr. , Frederick Abbott Ware , Craig E. Hampel , Richard M. Barth , Donald C. Stark , Abhijit Mukund Abhyankar , Catherine Yuhjung Chen , Thomas J. Sheffler , Ely K. Tsern , Steven Cameron Woo
发明人： Billy Wayne Garrett, Jr. , Frederick Abbott Ware , Craig E. Hampel , Richard M. Barth , Donald C. Stark , Abhijit Mukund Abhyankar , Catherine Yuhjung Chen , Thomas J. Sheffler , Ely K. Tsern , Steven Cameron Woo
IPC分类号： G06F1200
CPC分类号： G06F13/1657 , G06F13/1684 , Y02D10/14
摘要： A high-speed memory system is disclosed in which a single command effects control over either a single memory device or a plurality of memory devices depending on a present mode of operation. Such control may effect data transfer between the one or more memory devices and a memory controller, as well as operating state transitions or power mode transitions for the memory devices. Similarly, various configurations of relatively low bandwidth memory devices respond as a selectively controllable group to transmit or receive high bandwidth data.
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公开(公告)号：US06661268B2
公开(公告)日：2003-12-09
申请号：US10014650
申请日：2001-12-11
IPC分类号： H03K512
CPC分类号： H03K17/164 , G11C7/1051 , H03K19/00384
摘要： An output driver has an output multiplexor and an output current driver. The output multiplexor receives a data signal and outputs a q-node signal. The output current driver receives the q-node signal and drives a bus based on the q-node signal. The output multiplexor processes the data signal in various ways to generate the q-node signal. The output current driver is responsive to current control bits to select a amount of output drive current. In addition, the output multiplexor is controlled such that the output impedance of the output current driver is maintained within a predetermined range.
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89.发明授权Method and apparatus for adjusting the performance of a synchronous memory system 失效用于调整同步存储器系统性能的方法和装置公开(公告)号：US06513103B1
公开(公告)日：2003-01-28
申请号：US08948774
申请日：1997-10-10
申请人： Bruno Werner Garlepp , Pak Shing Chau , Kevin S. Donnelly , Clemenz Portmann , Donald C. Stark , Stefanos Sidiropoulos , Richard M. Barth , Paul G. Davis , Ely K. Tsern
发明人： Bruno Werner Garlepp , Pak Shing Chau , Kevin S. Donnelly , Clemenz Portmann , Donald C. Stark , Stefanos Sidiropoulos , Richard M. Barth , Paul G. Davis , Ely K. Tsern
IPC分类号： G06F1314
CPC分类号： G11C7/1048 , G06F13/1689 , G11C7/22 , G11C7/222 , G11C2207/2254
摘要： A method and apparatus for adjusting the performance of a memory system is provided. A memory system comprises a master device and a slave device. A memory channel couples the master device to the slave device such that the slave device receives the system operating information from the master device via the memory channel. The slave device further includes means for tuning circuitry within the slave device such that the performance of the memory system is improved.
摘要翻译： 提供了一种用于调整存储器系统的性能的方法和装置。 存储器系统包括主设备和从设备。 存储器通道将主设备耦合到从设备，使得从设备经由存储器通道从主设备接收系统操作信息。 从设备还包括用于在从设备内调谐电路的装置，从而提高存储器系统的性能。
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公开(公告)号：US06356975B1
公开(公告)日：2002-03-12
申请号：US09169526
申请日：1998-10-09
申请人： Richard M. Barth , Ely K. Tsern , Mark A. Horowitz , Donald C. Stark , Craig E. Hampel , Frederick A. Ware , John B. Dillon , by Nancy David Dillon
发明人： Richard M. Barth , Ely K. Tsern , Mark A. Horowitz , Donald C. Stark , Craig E. Hampel , Frederick A. Ware , John B. Dillon , by Nancy David Dillon
IPC分类号： G06F1200
CPC分类号： G11C7/1006 , G06F13/1615 , G11C7/10 , G11C7/1039 , G11C8/12 , G11C11/4076
摘要： A memory device has interface circuitry and a memory core which make up the stages of a pipeline, each stage being a step in a universal sequence associated with the memory core. The memory device has a plurality of operation units such as precharge, sense, read and write, which handle the primitive operations of the memory core to which the operation units are coupled. The memory device further includes a plurality of transport units configured to obtain information from external connections specifying an operation for one of the operation units and to transfer data between the memory core and the external connections. The transport units operate concurrently with the operation units as added stages to the pipeline, thereby creating a memory device which operates at high throughput and with low service times under the memory reference stream of common applications.
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