摘要:
The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. A RF plasma source power supply is connected across each of the plural conductors. In another embodiment, the antenna is a solenoidal segmented parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric side-by-side helical solenoids, each helical solenoid being offset by a distance on the order of a conductor width of the plurality of conductors from the nearest other helical solenoids in a direction perpendicular to the axis of symmetry, whereby each helical solenoid has slightly different diameter.
摘要:
The invention is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. An RF plasma source power supply is connected across each of the plural conductors.
摘要:
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2—SiH—O—SiH—(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.
摘要:
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.
摘要:
A chamber liner for use in a semiconductor process chamber and a semiconductor process chamber containing the chamber liner are disclosed. The process chamber includes a housing having an inner surface defining a chamber in which a vacuum is drawn during processing of a semiconductor wafer. The chamber liner has a plasma confinement shield with a plurality of apertures. An outer sidewall extends upwardly from the plasma confinement shield. An outer flange extends outwardly from the outer sidewall such that the outer flange extends beyond the chamber and into a space at atmospheric pressure. The chamber liner preferably further includes an inner sidewall that extends upwardly from the plasma confinement shield. The plasma confinement shield, the inner and outer sidewalls, and the outer flange are preferably integral with one another.
摘要:
A child's seat for use in motor vehicles, including an air bag and activation circuitry. Sensors on the seat emit a first signal confirming that the air bag is armed and that the seat belt is properly connected. A second warning signal is produced when the child's seat air bag is not properly functioning or if the child's seat is not properly held in place by the vehicle's seat belt system. Also disclosed is an air bag inflator including a pressure tank, a frangible membrane for sealing gas under pressure within the tank, and a pyrotechnic squib for rupturing the frangible membrane to deploy the air bag.
摘要:
An apparatus for analyzing a subject including a hyperspectral image module is provided. It is used to identify a suspect region of a subject by using a hyperspectral sensor (for obtaining a hyperspectral image of the subject), a control computer including a processor unit (PU) and a computer readable memory (CRM) (for controlling and is in electronic communication with the sensor), a control software module including instructions stored in the CRM and executed by the PU (for controlling said at least one operating parameter of the sensor), a spectral calibrator module including instructions stored in the CRM and executed by the PU (for applying a wavelength dependent spectral calibration standard constructed for the sensor to a hyperspectral image), and a light source for illuminating the subject. An optional contact probe module is used to collect a signal of the suspect region for medical diagnosis.
摘要:
One embodiment identifies all one-hop neighbor nodes and two-hop neighbor nodes of a node; determines an active set of one-hop neighbor nodes for the node, comprising: includes in the active set each one-hop neighbor node that is either an edge node or connected with at least one two-hop neighbor node with which no other one-hop neighbor nodes are connected; and if the active set is not yet complete, then: determine all combinations of one-hop neighbor nodes that are not already in the active set; and tests each combination in order of each combination's total-energy value to determine whether a specific combination is able to complete the active set; if no combination is able to complete the active set, then including all one-hop neighbor nodes in the active set; and communicates a message to each one-hop neighbor node in the active set indicating that it is in the active set.
摘要:
A method to maintain write operation atomicity where a write operation crosses a data storage medium track boundary. The method supplies a storage controller comprising a host adapter, a processor, and a NVS. The host adapter receives from a host computer a write request and data. The method determines if the write request will cross a data storage medium track boundary. If the write request will cross a data storage medium track boundary, the method indicates to the host adapter that the write request comprises a two-track transfer, and writes the data to the NVS as the data is received. If the host computer fails prior to providing all the data to the storage controller, the method discards the data written to the NVS to ensure write operation atomicity.
摘要:
A submersible pumping system includes a pump assembly, a motor and a seal section positioned between the pump assembly and the motor. The seal section includes a clean fluid circulation system, a contaminated fluid circulation system and at least one bag seal assembly. The bag seal assembly includes an upper mounting block, a lower mounting block and a bag seal extending over the upper mounting block and lower mounting block and providing a path for the clean fluid circulation system. The bag seal assembly further includes a mounting plate connected to the upper mounting block that limits the axial travel of the bag seal on the upper mounting block. The bag seal assembly optionally includes a breather tube connected to the mounting plate and extending along the exterior of the bag seal.