公开(公告)号：US20080121946A1

公开(公告)日：2008-05-29

申请号：US11736658

申请日：2007-04-18

Applicant: Doo Hyeb YOUN ,  Sunglyul MAENG ,  Sang Hyeob KIM ,  Jonghyurk PARK ,  Kwang Yong KANG ,  Sang Hoon LEE ,  Chull Won JU

Inventor： Doo Hyeb YOUN ,  Sunglyul MAENG ,  Sang Hyeob KIM ,  Jonghyurk PARK ,  Kwang Yong KANG ,  Sang Hoon LEE ,  Chull Won JU

IPC: H01L29/78 ,  H01L21/00

CPC classification number: G01N27/122 ,  G01N27/127

Abstract: A method of forming a sensor for detecting gases and biochemical materials that can be fabricated at a temperature in a range from room temperature to 400° C., a metal oxide semiconductor field effect transistor (MOSFET)-based integrated circuit including the sensor, and a method of manufacturing the integrated circuit are provided. The integrated circuit includes a semiconductor substrate. The sensor for detecting gases and biochemical materials includes a pair of electrodes formed on a first region of the semiconductor substrate, and a metal oxide nano structure layer formed on surfaces of the pair electrodes. A heater is formed to perform thermal treatment to re-use the material detected in the metal oxide nano structure layer. Also, a signal processor is formed by a MOSFET to process a predetermined signal obtained from a quantity change of a current flowing through the pair of electrodes of the sensor. To form the sensor, the metal oxide nano structure layer is formed on surfaces of the pair of electrodes at a temperature in a range from room temperature to 400° C.

Abstract translation: 一种形成用于检测可在室温至400℃的温度范围内制造的气体和生物化学材料的传感器的方法，基于金属氧化物半导体场效应晶体管（MOSFET）的集成电路，包括该传感器，以及 提供了一种制造集成电路的方法。 集成电路包括半导体衬底。 用于检测气体和生化材料的传感器包括形成在半导体衬底的第一区域上的一对电极和形成在该对电极的表面上的金属氧化物纳米结构层。 形成加热器以进行热处理以重新使用在金属氧化物纳米结构层中检测的材料。 此外，信号处理器由MOSFET形成以处理从流过传感器的一对电极的电流的量变化获得的预定信号。 为了形成传感器，金属氧化物纳米结构层在室温至400℃的温度范围内形成在该对电极的表面上。

公开(公告)号：US20080111956A1

公开(公告)日：2008-05-15

申请号：US11940067

申请日：2007-11-14

Applicant: Chul Ho KIM ,  Kook Chul Moon ,  Jae Hyun Kim ,  Ho Suk Maeng ,  Sang Hoon Lee ,  Kyung Hoon Kim ,  Keun Woo Park

Inventor： Chul Ho KIM ,  Kook Chul Moon ,  Jae Hyun Kim ,  Ho Suk Maeng ,  Sang Hoon Lee ,  Kyung Hoon Kim ,  Keun Woo Park

IPC: G02F1/1335 ,  H01L21/84

CPC classification number: G02F1/134309 ,  G02F1/133555 ,  G02F1/136213 ,  G02F1/1393 ,  G02F2001/134345 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255

Abstract: A thin film transistor (TFT) substrate that is capable of providing a wide viewing angle and high contrast ratio without a decrease is aperture ratio is presented. The TFT substrate may be, for example, used with a patterned vertical alignment (PVA) mode LCD. The TFT substrate includes gate lines and data lines extending in non-parallel directions and a pixel electrode formed in a pixel region. The pixel region has two transmission regions separated from each other by a reflection region, and at least one of the gate lines is formed in the reflection region. A storage capacitor may also be formed in the reflection region. This configuration avoids the use of a bridge region between the two transmission regions that is responsible for aperture ratio decrease in the conventional configuration.

Abstract translation: 提出了能够提供宽视角和高对比度而不降低的薄膜晶体管（TFT）基板的开口率。 TFT基板例如可以与图案化的垂直取向（PVA）模式的LCD一起使用。 TFT基板包括在非平行方向上延伸的栅极线和数据线以及形成在像素区域中的像素电极。 像素区域具有通过反射区域彼此分离的两个透射区域，并且至少一个栅极线形成在反射区域中。 还可以在反射区域中形成存储电容器。 这种构造避免了在传统配置中负责孔径比减小的两个传输区域之间的桥接区域的使用。

公开(公告)号：US20080030985A1

公开(公告)日：2008-02-07

申请号：US11832687

申请日：2007-08-02

Applicant: Eun-Chae Jeon ,  Eun-Jeong Kang ,  Sang-Hoon Lee ,  Si-Joon Song ,  Moon-Hwan Chang

Inventor： Eun-Chae Jeon ,  Eun-Jeong Kang ,  Sang-Hoon Lee ,  Si-Joon Song ,  Moon-Hwan Chang

IPC: F21V9/10

CPC classification number: G02F1/133603 ,  G02F2001/133613 ,  Y10S362/80

Abstract: A backlight assembly includes a circuit board and a plurality of point light source groups. The plurality of point light source groups includes N point light sources that generate different respective colors and being arranged on the circuit board. Here, N is a number of point light sources. One light source group of the light source groups is rotated by an angle of predetermined degrees in a clockwise direction or a counter-clockwise direction with respect to another light source group that is adjacent to the one point light source group.

Abstract translation: 背光组件包括电路板和多个点光源组。 多个点光源组包括产生不同颜色并被布置在电路板上的N点光源。 这里，N是多个点光源。 光源组的一个光源组相对于与一点光源组相邻的另一个光源组在顺时针方向或逆时针方向旋转预定角度的角度。

公开(公告)号：US20080025688A1

公开(公告)日：2008-01-31

申请号：US11727055

申请日：2007-03-23

Applicant: Dong Ho Lee ,  Won Ki Cho ,  Wan Soo Han ,  Ho Seok Ko ,  Sang Hoon Lee ,  Hee Chan Eum ,  Jong Kyo Jeong

Inventor： Dong Ho Lee ,  Won Ki Cho ,  Wan Soo Han ,  Ho Seok Ko ,  Sang Hoon Lee ,  Hee Chan Eum ,  Jong Kyo Jeong

IPC: G02B6/10

CPC classification number: G02B6/0038 ,  G02B6/0043

Abstract: A light guide member for guiding light received from a light source unit, the light source unit illuminating light toward the light guide member, the light guide member may include a plurality of first grooves on a first side of the light guide member, the first grooves extending along a first direction, and a plurality of first projections projecting from surfaces of the first grooves.

公开(公告)号：US20070279371A1

公开(公告)日：2007-12-06

申请号：US11634842

申请日：2006-12-07

Applicant: Sang-hoon Lee ,  Jeong-il Kang

Inventor： Sang-hoon Lee ,  Jeong-il Kang

IPC: G09G3/36

CPC classification number: H05B33/0851 ,  H05B33/0815

Abstract: Provided is a light emitting device and a method of controlling the same are disclosed. The light emitting unit includes a power supply unit for supplying a drive voltage to the light emitting unit, and a control unit for comparing a first current level previously applied to the light emitting unit with a second current level to be applied to the light emitting unit in accordance with image information to be displayed using the light emitting unit, and controlling a voltage level applied to the light emitting unit based on a result of comparison.

Abstract translation: 提供了一种发光器件及其控制方法。 发光单元包括用于向发光单元提供驱动电压的电源单元和用于将先前施加到发光单元的第一电流水平与施加到发光单元的第二电流水平进行比较的控制单元 根据要使用发光单元显示的图像信息，以及基于比较的结果控制施加到发光单元的电压电平。

公开(公告)号：US20070279363A1

公开(公告)日：2007-12-06

申请号：US11747306

申请日：2007-05-11

Applicant: Ho-Suk MAENG ,  Kook-Chul Moon ,  Pil-Mo Choi ,  Shul-Ho Kim ,  Sang-Hoon Lee ,  Kyung-Hoon Kim ,  Keun-Woo Park

Inventor： Ho-Suk MAENG ,  Kook-Chul Moon ,  Pil-Mo Choi ,  Shul-Ho Kim ,  Sang-Hoon Lee ,  Kyung-Hoon Kim ,  Keun-Woo Park

IPC: G09G3/36

CPC classification number: G09G3/3648 ,  G09G3/3614 ,  G09G3/3674 ,  G09G3/3685 ,  G09G2310/0218 ,  G09G2310/0229

Abstract: A display apparatus includes a display panel, a driving part, a gate driving part and a gate selecting part. The display panel has source lines and gate lines intersecting the source lines. The driving part converts original data signals received through an interlaced scan method into analog-type data voltages and outputs the data voltages to the source lines. The gate driving part sequentially outputs gate signals. The gate selecting part selectively outputs the gate signals to odd-numbered gate lines and even-numbered gate lines corresponding to the data voltages output to the source lines.

Abstract translation: 显示装置包括显示面板，驱动部，门驱动部以及门选择部。 显示面板具有与源极线相交的源极线和栅极线。 驱动部分将通过隔行扫描方法接收的原始数据信号转换为模拟型数据电压，并将数据电压输出到源极线。 栅极驱动部分依次输出栅极信号。 栅极选择部分选择性地将栅极信号输出到与输出到源极线的数据电压相对应的奇数栅极线和偶数栅极线。

公开(公告)号：US20070246446A1

公开(公告)日：2007-10-25

申请号：US11629611

申请日：2004-06-18

Applicant: Sang-Hoon Lee ,  Yong-Hee Won ,  Tae-Seong Kim ,  Tae-Jung Lee ,  Jung-Hoon Byun ,  Suck-Joo Na ,  Suk-Hwan Yoon ,  Jae-Ryun Hwang

Inventor： Sang-Hoon Lee ,  Yong-Hee Won ,  Tae-Seong Kim ,  Tae-Jung Lee ,  Jung-Hoon Byun ,  Suck-Joo Na ,  Suk-Hwan Yoon ,  Jae-Ryun Hwang

IPC: B23K26/00

CPC classification number: B23K33/006 ,  B23K10/02 ,  B23K26/262 ,  B23K26/32 ,  B23K26/348 ,  B23K26/60 ,  B23K2101/06 ,  B23K2103/04 ,  B23K2103/05 ,  B23K2103/10 ,  B23K2103/12 ,  B23K2103/14 ,  B23K2103/50

Abstract: A continuous butt welding method using plasma and laser, and a method for fabricating a metal tube using the butt welding method are disclosed. The butt welding method conducts a laser welding and a plasma welding together against an object to be welded, which has a very narrow butt space. In particular, the plasma is prior to the laser so that the object is preheated by the plasma, and then a preform is melted by a laser beam in order to accomplish the major welding. In addition, a metal sheet is bent to have a circular section so that its both ends are faced with each other, and then the faced both ends are welded using the aforementioned butt welding method, thereby fabricating a metal tube. The butt welding method and the metal tube fabricating method mentioned above remarkably improve a welding speed and productivity of metal tube.

Abstract translation: 公开了使用等离子体和激光的连续对接焊接方法以及使用对接焊接方法制造金属管的方法。 该对接焊接方法相对于具有非常窄的对接空间的待焊接物体进行激光焊接和等离子体焊接。 特别地，等离子体在激光之前，使得物体被等离子体预热，然后通过激光束熔化预制件以实现主要焊接。 另外，将金属片弯曲成具有圆形部分，使得其两端彼此面对，然后使用上述对接焊接方法焊接面对的两端，从而制造金属管。 上述对接焊接方法和金属管制造方法显着提高了金属管的焊接速度和生产率。

公开(公告)号：US20070217220A1

公开(公告)日：2007-09-20

申请号：US11653389

申请日：2007-01-16

Applicant: Jeong-il Kang ,  Sang-hoon Lee

Inventor： Jeong-il Kang ,  Sang-hoon Lee

IPC: G01B13/18 ,  G01B21/22 ,  F21V7/04 ,  G01B5/00

CPC classification number: H05B33/0866 ,  H05B33/0815 ,  H05B33/0818 ,  H05B33/086 ,  Y02B20/346

Abstract: A light emitting apparatus and control method are provided. The light-emitting apparatus includes a light emitting part; a power supplying part; a switching part which is serially coupled to the light emitting part; and a control part which compares a switch voltage level with a comparison level, and controls the power supplying part to supply the driving power having a voltage level decreased by a reference level if the switch voltage level is higher than the comparison level. The control method includes supplying a driving power to the light emitting part; emitting light; measuring a switch voltage level across the switching part, and decreasing a voltage level of the driving power by a reference level if the switch voltage level is higher than the comparison level.

Abstract translation: 提供一种发光装置和控制方法。 发光装置包括发光部分; 供电部; 与发光部串联连接的开关部; 以及控制部分，其将开关电压电平与比较电平进行比较，并且如果所述开关电压电平高于所述比较电平，则控制所述电力供应部分将具有降低了参考电平的电压电平的驱动功率提供。 控制方法包括向发光部提供驱动电力; 发光; 测量开关部分的开关电压电平，并且如果开关电压电平高于比较电平，则将驱动功率的电压电平降低基准电平。

公开(公告)号：US07268029B2

公开(公告)日：2007-09-11

申请号：US10994042

申请日：2004-11-19

Applicant: Eun-kuk Chung ,  Joon Kim ,  Suk-Chul Bang ,  Jong-Sun Ahn ,  Sang-hoon Lee ,  Woo-soon Jang ,  Yung-jun Kim

Inventor： Eun-kuk Chung ,  Joon Kim ,  Suk-Chul Bang ,  Jong-Sun Ahn ,  Sang-hoon Lee ,  Woo-soon Jang ,  Yung-jun Kim

IPC: H01L21/8238

CPC classification number: H01L21/823842 ,  H01L21/31111 ,  H01L21/31144

Abstract: Provided is a method of fabricating a CMOS transistor in which, after a polysilicon layer used as a gate is formed on a semiconductor substrate, a photoresist pattern that exposes an n-MOS transistor region is formed on the polysilicon layer. An impurity is implanted in the polysilicon layer of the n-MOS transistor region using the photoresist pattern as a mask, and the photoresist pattern is removed. If the polysilicon layer of the n-MOS transistor region is damaged by the implanting of the impurity, the polysilicon layer of the n-MOS transistor region is annealed, and a p-MOS transistor gate and an n-MOS transistor gate are formed by patterning the polysilicon layer. The semiconductor substrate, the p-MOS transistor gate and the n-MOS transistor gate is cleaned with a hydrofluoric acid (HF) solution, without causing a decrease in height of the n-MOS transistor gate.

Abstract translation: 提供一种制造CMOS晶体管的方法，其中在半导体衬底上形成用作栅极的多晶硅层之后，在多晶硅层上形成曝光n-MOS晶体管区的光刻胶图案。 使用光致抗蚀剂图案作为掩模，在n-MOS晶体管区域的多晶硅层中注入杂质，除去光致抗蚀剂图案。 如果n-MOS晶体管区域的多晶硅层通过注入杂质而损坏，则n-MOS晶体管区域的多晶硅层退火，并且p-MOS晶体管栅极和n-MOS晶体管栅极由 构图多晶硅层。 用氢氟酸（HF）溶液清洗半导体衬底，p-MOS晶体管栅极和n-MOS晶体管栅极，而不会降低n-MOS晶体管栅极的高度。

公开(公告)号：US20070192077A1

公开(公告)日：2007-08-16

申请号：US11698690

申请日：2007-01-26

Applicant: Dae-Wook Kim ,  Sang-Hoon Lee ,  Ji-Seong Doh ,  Moon-Hyun Yoo ,  Jong-Bae Lee

Inventor： Dae-Wook Kim ,  Sang-Hoon Lee ,  Ji-Seong Doh ,  Moon-Hyun Yoo ,  Jong-Bae Lee

IPC: G06F17/50 ,  G06G7/62

CPC classification number: G06F17/5009 ,  G01R31/31711 ,  G01R31/318314 ,  G06F2217/10 ,  G06F2217/78

Abstract: A method for estimating statistical distribution characteristics of physical parameters of a semiconductor device includes manufacturing a plurality of semiconductor device chips, each having a plurality of transistors, preparing electrical characteristic data by measuring electrical characteristics of the plurality of transistors included in the plurality of chips, extracting an inter-chip distribution characteristic and an intra-chip distribution characteristic of the electrical characteristics by analyzing the electrical characteristic data, generating random number data satisfying the extracted inter-chip and intra-chip distribution characteristics, and performing a simulation for extracting statistical distribution characteristic data of the physical parameters of the chips, based on the random number data.

Abstract translation: 一种用于估计半导体器件的物理参数的统计分布特性的方法包括制造多个半导体器件芯片，每个半导体器件芯片具有多个晶体管，通过测量包括在多个芯片中的多个晶体管的电特性来制备电特性数据， 通过分析电特性数据，产生满足提取的芯片间和片内分布特性的随机数数据，提取电特性的片间分布特性和芯片内分布特性，并执行用于提取统计分布的模拟 基于随机数数据的芯片的物理参数的特征数据。