Process for forming semiconductor laser diode implemented with sampled grating
    81.
    发明授权
    Process for forming semiconductor laser diode implemented with sampled grating 有权
    用采样光栅实现的形成半导体激光二极管的工艺

    公开(公告)号:US09577142B2

    公开(公告)日:2017-02-21

    申请号:US14926579

    申请日:2015-10-29

    发明人: Masami Ishiura

    摘要: A method to produce a semiconductor laser diode (LD) including a sampled grating (SG) is disclosed. The method prepares various resist patterns each including grating regions and space regions alternately arranged along an optical axis. The grating regions and the space region in respective cavity types have total widths same with the others but the grating regions in respective types has widths different from others. After the formation of the grating patterns based on the resist patterns, only one of the grating patterns is used for subsequent processes.

    摘要翻译: 公开了一种制造包括采样光栅(SG)的半导体激光二极管(LD)的方法。 该方法制备各种抗蚀剂图案,每个抗蚀图案包括沿着光轴交替布置的光栅区域和空间区域。 相应腔型中的光栅区域和空间区域具有与其它类型相同的总宽度,但是各种类型的光栅区域具有与其它区域不同的宽度。 在基于抗蚀剂图案形成光栅图案之后,仅将一种光栅图案用于后续处理。

    OPTICAL MODULE HAVING OPTICAL UNIT ENCLOSING SEMICONDUCTOR OPTICAL DEVICE LEVELED TO SURFACE FIXING OPTICAL UNIT
    83.
    发明申请
    OPTICAL MODULE HAVING OPTICAL UNIT ENCLOSING SEMICONDUCTOR OPTICAL DEVICE LEVELED TO SURFACE FIXING OPTICAL UNIT 有权
    具有光学单元的光学模块将半导体光学器件覆盖到表面固定光学单元

    公开(公告)号:US20160266318A1

    公开(公告)日:2016-09-15

    申请号:US15062997

    申请日:2016-03-07

    发明人: Takeshi Okada

    IPC分类号: G02B6/293 G02B6/42

    摘要: A bi-directional optical module that provides an Rx unit and a Tx unit, where optical axes are perpendicular to each other, is disclosed. The optical module provides a housing that installs a WDM filter therein and assembles the coupling unit in a surface through the front alignment unit, the Tx unit in another surface opposite to the former surface, and the Rx unit in still another surface connecting the former two surfaces through the rear alignment unit. The axes of the Tx unit and the coupling unit are in parallel to each other, but the axis of the Rx unit is in perpendicular to the former two axes. The Rx unit installs a photodiode (PD) with an optically sensitive surface leveled with the surface of the rear alignment unit to which the Rx unit is attached.

    摘要翻译: 公开了一种双向光学模块,其提供Rx单元和Tx单元,其中光轴彼此垂直。 光学模块提供了一个在其中安装WDM滤光器的外壳,通过前对齐单元,Tx单元在与前一表面相反的另一个表面中的组件将耦合单元组装在另一表面中,并将Rx单元连接在前两个 表面通过后对齐单元。 Tx单元和耦合单元的轴线彼此平行,但Rx单元的轴线与前两个轴线垂直。 Rx单元安装具有与Rx单元所连接的后对齐单元的表面平齐的光敏表面的光电二极管(PD)。

    Optical module having composite prism to multiplex optical beams
    84.
    发明授权
    Optical module having composite prism to multiplex optical beams 有权
    具有复合棱镜的光学模块用于复用光束

    公开(公告)号:US09432139B2

    公开(公告)日:2016-08-30

    申请号:US14244705

    申请日:2014-04-03

    发明人: Takeshi Okada

    摘要: An optical module that installs a plurality of laser diodes (LDs) and a composite prism to condense optical beams emitted from the LDs is disclosed. The LDs are arranged on a line so as to level the optical beams within a plane. The composite prism includes input surfaces and output surfaces each corresponding to respective one of the input surfaces. The composite prism outputs optical beams whose intervals are narrowed compared with intervals of the optical beams entering therein.

    摘要翻译: 公开了一种安装多个激光二极管(LD)和复合棱镜以冷凝从LD发射的光束的光学模块。 LD被布置在一条直线上,以使平面内的光束平坦化。 复合棱镜包括各自对应于输入表面中的相应一个的输入表面和输出表面。 复合棱镜输出与进入其中的光束的间隔相比间隔窄的光束。

    PROCESS FOR FORMING SEMICONDUCTOR LASER DIODE IMPLEMENTED WITH SAMPLED GRATING
    87.
    发明申请
    PROCESS FOR FORMING SEMICONDUCTOR LASER DIODE IMPLEMENTED WITH SAMPLED GRATING 有权
    形成用取样粉末实现的半导体激光二极管的工艺

    公开(公告)号:US20160126700A1

    公开(公告)日:2016-05-05

    申请号:US14926579

    申请日:2015-10-29

    发明人: Masami Ishiura

    IPC分类号: H01S5/227 H01S5/026

    摘要: A method to produce a semiconductor laser diode (LD) including a sampled grating (SG) is disclosed. The method prepares various resist patterns each including grating regions and space regions alternately arranged along an optical axis. The grating regions and the space region in respective cavity types have total widths same with the others but the grating regions in respective types has widths different from others. After the formation of the grating patterns based on the resist patterns, only one of the grating patterns is used for subsequent processes.

    摘要翻译: 公开了一种制造包括采样光栅(SG)的半导体激光二极管(LD)的方法。 该方法制备各种抗蚀剂图案,每个抗蚀图案包括沿着光轴交替布置的光栅区域和空间区域。 相应腔型中的光栅区域和空间区域具有与其它类型相同的总宽度,但是各种类型的光栅区域具有与其它区域不同的宽度。 在基于抗蚀剂图案形成光栅图案之后,仅将一种光栅图案用于后续处理。

    Method to control transmitter optical module
    89.
    发明授权
    Method to control transmitter optical module 有权
    控制发射机光模块的方法

    公开(公告)号:US09325153B2

    公开(公告)日:2016-04-26

    申请号:US14465615

    申请日:2014-08-21

    摘要: An optical module capable of monitoring an inner temperature thereof by a simple arrangement is disclosed. The optical module installs an avalanche photodiode (APD). The APD generates the first photocurrent under a bias where the APD shows the multiplication factor thereof M equal to the unity, and the second photocurrent under another bias where the multiplication factor becomes greater than the unity. The operating temperature of the laser diode (LD) may be estimated from a ratio of the first photocurrent to the second photocurrent.

    摘要翻译: 公开了一种能够通过简单的配置监视其内部温度的光学模块。 光学模块安装雪崩光电二极管(APD)。 APD在偏置下产生第一光电流,其中APD显示其乘法因子M等于单位,而第二光电流在倍增因子变得大于单位的另一偏压下产生。 激光二极管(LD)的工作温度可以从第一光电流与第二光电流的比率估计。

    Semiconductor device and method of manufacturing semiconductor device
    90.
    发明授权
    Semiconductor device and method of manufacturing semiconductor device 有权
    半导体装置及其制造方法

    公开(公告)号:US09281370B2

    公开(公告)日:2016-03-08

    申请号:US14318064

    申请日:2014-06-27

    发明人: Masahiro Nishi

    摘要: A manufacturing method according to an embodiment of this invention is a method of manufacturing a semiconductor device, which has: a first step of forming a first electrode 22 containing Ti or Ta on a top face of a nitride semiconductor layer 18; a second step of forming a second electrode 24 containing Al on a top face of the first electrode 22; a third step of forming a coating metal layer 26 covering at least one of an edge of a top face of the second electrode 24 and a side face of the second electrode 24, having a window 26a exposing the top face of the second electrode 24 in a region separated from the foregoing edge, and containing at least one of Ta, Mo, Pd, Ni, and Ti; and a step of performing a thermal treatment, after the third step.

    摘要翻译: 根据本发明的实施例的制造方法是制造半导体器件的方法,其具有:在氮化物半导体层18的顶面上形成包含Ti或Ta的第一电极22的第一步骤; 在第一电极22的顶面上形成包含Al的第二电极24的第二步骤; 形成覆盖第二电极24的顶面的边​​缘和第二电极24的侧面中的至少一个的涂覆金属层26的第三步骤,具有将第二电极24的顶面露出的窗口26a 与前述边缘分离并含有Ta,Mo,Pd,Ni和Ti中的至少一种的区域; 以及在第三步骤之后进行热处理的步骤。