Abstract:
A control device calculates a voltage command value of a voltage step-up converter based on a torque command value and a motor revolution number and calculates an on-duty of an NPN transistor based on the calculated voltage command value and a DC voltage from a voltage sensor. When the on-duty is influenced by a dead time of NPN transistors, control device fixes the on-duty at 1.0 to control the NPN transistors in such a manner that the voltage is increased or decreased.
Abstract:
A discharge lamp lighting apparatus includes a discharge container, a pair of electrodes and a power supply apparatus. An alternating current of a frequency, which is lower than stationary frequency, is inserted periodically into the alternating current of stationary frequency. When a lighting current value of the discharge lamp is smaller than a predetermined lower limit, the frequency is set as predetermined minimum frequency. When the lighting current value of a discharge lamp is larger than a predetermined maximum value, the frequency is set as predetermined maximum frequency. When a lighting current value of the discharge lamp is between the lower limit and the maximum value, the frequency is set as a selected frequency corresponding to the lighting current value. The selected frequency increases according to an increase of frequency change as a lighting current value increases.
Abstract:
Provision of a multilayer structure superior in the alcohol gasoline permeation-preventing property, interlayer adhesiveness, low temperature impact resistance, heat resistance and chemical resistance. A multilayer structure comprising at least two layers of layer A consisting of a polyamide resin composition (a) comprising 30-90 mass % of a polyamide resin (X) comprising a dicarboxylic acid unit comprising 50-100 mol % of a terephthalic acid unit and/or a lo naphthalene dicarboxylic acid unit, and a diamine unit comprising 60-100 mol % of an aliphatic diamine unit having 9-13 carbon atoms, and 70-10 mass % of an impact resistance modifier, and layer B consisting of a polyamide resin composition (b) comprising 50-95 mass % of a polyamide resin (X′) comprising a dicarboxylic acid unit comprising 50-100 mol % of a terephthalic acid unit and/or a naphthalene dicarboxylic acid unit, and a diamine unit comprising 60-100 mol % of an aliphatic diamine unit having 9-13 carbon atoms, and 50-5 mass % of an impact resistance modifier, which satisfies Y≧Y′+5 wherein Y shows a content ratio (mass %) of the impact resistance modifier in layer A and Y′ shows a content ratio (mass %) of the impact resistance modifier in layer B.
Abstract:
A semi-aromatic polyamide resin is provided which has a high level of residence stability, hot-water resistance and chemical resistance and is also excellent in adhesive properties and compatibility with other resins and the like.The semi-aromatic polyamide resin comprises: dicarboxylic acid units in which 50 to 100 mol % of the dicarboxylic acid units are aromatic dicarboxylic acid units; and diamine units in which 60 to 100 mol % of the diamine units are aliphatic diamine units having 9 to 13 carbon atoms. Furthermore, at least 10% of terminal groups of molecular chains of the polyamide resin are blocked with a terminal-blocking agent, and the amount of terminal amino groups of the molecular chains is 60 μeq/g or more and 120 μeq/g or less. In addition, [NH2]/[COOH]≧6 is satisfied, where [NH2] (μeq/g) represents the amount of the terminal amino groups and [COOH] (μeq/g) represents the amount of terminal carboxyl groups.
Abstract:
A semiconductor device includes a lower-layer substrate, a fuse above the lower-layer substrate and blown by radiation with light, a silicon oxide film on the fuse and on an exposed portion of the surface of the lower-layer substrate, and a silicon nitride film on the silicon oxide film. The portion of the silicon oxide film on the surface of the lower-layer substrate is thicker than the fuse, and the silicon oxide film has an opening opposite the fuse.
Abstract:
A control device calculates a voltage command value of a voltage step-up converter based on a torque command value and a motor revolution number and calculates an on-duty of an NPN transistor based on the calculated voltage command value and a DC voltage from a voltage sensor. When the on-duty is influenced by a dead time of NPN transistors, control device fixes the on-duty at 1.0 to control the NPN transistors in such a manner that the voltage is increased or decreased.
Abstract:
The novel benzamide derivative represented by formula (1) and the novel anilide derivative represented by formula (13) of this invention has differentiation-inducing effect, and are, therefore, useful a therapeutic or improving agent for malignant tumors, autoimmune diseases, dermatologic diseases and parasitism. In particular, they are highly effective as an anticancer drug, specifically to a hematologic malignancy and a solid carcinoma.
Abstract:
When a sealing portion at an end portion of an extruded weatherstrip is cut out by a fixed length and a main body and a lip are set on a metal mold for die forming, concave portions are formed on a lower surface and side surface of the main body to be set on the metal mold, and are latched, respectively with convex portions of the metal mold to restrict movement. Thus a problem in external appearance caused by movement or bending of a part of the main body including the lip due to a molding pressure is eliminated.
Abstract:
An interlayer insulating film (21) is formed on a substrate (1), and a polysilicon layer (10) is formed on the interlayer insulating film (21). An interlayer insulating film (22) is formed to cover the polysilicon layer (10), and a polysilicon layer (11) is formed on the interlayer insulating film (22). An interlayer insulating film (23) is formed to cover the interlayer insulating film (22). A hole (20M) for a mark to constitute an alignment mark or the like is formed from a surface (23S) of the interlayer insulating film (23) to the polysilicon layer (11). The hole (20M) for a mark is larger than a contact hole formed from the surface (23S) to the substrate (1) but is shallower than the contact hole. Consequently, a concave portion corresponding to the hole (20M) for a mark is formed, with difficulty, on a silicon oxide layer to be subjected to CMP polishing and then become an interlayer insulting film (4). Therefore, it is possible to prevent a slurry from remaining in the concave portion. Thus, it is possible to obtain a semiconductor device having high reliability without a disadvantage such as a wiring disconnection or the like which is caused by the remaining or scattering of the slurry to be used for a CMP method.
Abstract:
A light source device in which a discharge lamp, which contains greater than or equal to 0.15 mg mercury per cubic millimeter of the volume of the discharge space, and in which there is a pair of electrodes disposed opposite one another, is connected to a feed device (Ex). The feed device is used to start the discharge lamp and to supply the discharge current to the electrodes. The feed device (Ex) serves an identification function identifying a discharge state of the discharge lamp as a glow discharge state. Further, during the identification of the glow discharge state, the electric power supplied to the discharge lamp is set at less than or equal to twice as high as the nominal electric power of the above described discharge lamp to eliminate the formation of blackening on the inside of the bulb glass during glow discharge.